SUM85N03-06P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES rDS(on) (W) ID (A) 0.006 @ VGS = 10 V 85 D D D D 0.009 @ VGS = 4.5 V 77 APPLICATIONS PRODUCT SUMMARY V(BR)DSS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency New Package with Low Thermal Resistance D Buck Converter – High Side – Low Side D Synchronous Rectifier – Secondary Rectifier D TO-263 G G D S Top View S SUM85N03-06P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 100_C Pulsed Drain Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_Cc Operating Junction and Storage Temperature Range V 85 ID IDM Avalanche Current Unit 67 200 IAR 45 EAR 101 A mJ 100b PD 3.75 W TJ, Tstg –55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mountc Junction-to-Ambient Junction-to-Case Free Air 40 RthJA RthJC 62.5 _C/W C/W 1.5 Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71903 S-20921—Rev. A, 01-Jul-02 www.vishay.com 1 SUM85N03-06P New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 24 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) V VDS = 24 V, VGS = 0 V, TJ = 125_C 50 VDS = 24 V, VGS = 0 V, TJ = 175_C 250 VDS w 5 V, VGS = 10 V 120 VGS = 10 V, ID = 20 A Drain-Source On-State Resistancea rDS(on) gfs 0.0045 mA m 0.006 0.0085 VGS = 10 V, ID = 20 A, TJ = 175_C 0.011 VDS = 15 V, ID = 20 A nA A VGS = 10 V, ID = 20 A, TJ = 125_C 0.0072 VGS = 4.5 V, ID = 20 A Forward Transconductancea 3.0 W 0.009 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 255 Gate-Resistance RG 1.9 Total Gate Chargeb Qg 48 Gate-Source Chargeb Qgs 10 Gate-Drain Chargeb Qgd 7.5 Turn-On Delay Timeb td(on) 12 20 12 20 30 45 10 15 Rise Timeb Turn-Off Delay Timeb Fall Timeb tr td(off) 3100 VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 50 A VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, RG = 2.5 W tf 565 pF W 65 nC ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)c Continuous Current IS 100 Pulsed Current ISM 200 Forward Voltagea VSD Reverse Recovery Time trr A IF = 30 A, VGS = 0 V 1.2 1.5 V IF = 50 A, di/dt = 100 A/ms 35 70 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Independent of operating temperature. c. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71903 S-20921—Rev. A, 01-Jul-02 SUM85N03-06P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 120 250 VGS = 10 thru 6 V 100 5V I D – Drain Current (A) I D – Drain Current (A) 200 150 100 4V 50 80 60 40 TC = 125_C 20 25_C 2, 3 V –55_C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 5 120 TC = –55_C r DS(on) – On-Resistance ( W ) 100 g fs – Transconductance (S) 25_C 80 125_C 60 40 20 VGS = 4.5 V VGS = 10 V 0 0 20 40 60 80 100 ID – Drain Current (A) ID – Drain Current (A) Capacitance Gate Charge 10 4000 Ciss V GS – Gate-to-Source Voltage (V) C – Capacitance (pF) 3500 3000 2500 2000 1500 1000 Coss Crss 500 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71903 S-20921—Rev. A, 01-Jul-02 30 0 10 20 30 40 50 Qg – Total Gate Charge (nC) www.vishay.com 3 SUM85N03-06P New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.0 100 1.6 I S – Source Current (A) r DS(on) – On-Resistance (W) (Normalized) VGS = 10 V ID = 20 A 1.2 0.8 TJ = 150_C TJ = 25_C 10 0.4 0.0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (_C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain-Source Voltage Breakdown vs. Junction Temperature 40 V (BR)DSS (V) 38 36 34 32 30 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) www.vishay.com 4 Document Number: 71903 S-20921—Rev. A, 01-Jul-02 SUM85N03-06P New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area, Junction-to-Case 1000 100 10 ms 80 100 ms I D – Drain Current (A) I D – Drain Current (A) 100 60 40 20 0 1 ms 10 Limited by rDS(on) 10 ms 100 ms dc 1 TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 1 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71903 S-20921—Rev. A, 01-Jul-02 www.vishay.com 5