ETC UPG2126TB

DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2126TB
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and
another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
FEATURES
!
• Supply voltage
: VDD1, 2, 3 = 3.1 to 4.4 V (3.6 V TYP.)
• Low operation current
: IDD1 = 16 mA TYP. @ VDD1 = 3.6 V, f = 925 MHz, Pout = +8 dBm
• High power gain
: IDD2 = 28 mA TYP. @ VDD2, 3 = 3.6 V, f = 1 441 MHz, Pout = +8 dBm
: GP1 = 16 dB TYP. @ VDD1 = 3.6 V, f = 925 MHz, Pin = −10 dBm
• Low distortion
: Padj1 = −60 dBc TYP. @ VDD1, 2, 3 = 3.6 V, f = 925 MHz, 1 441 MHz, Pout = +8 dBm,
!
!
: GP2 = 26 dB TYP. @ VDD2, 3 = 3.6 V, f = 1 441 MHz, Pin = −22 dBm
!
∆f = ±50 kHz, 21 kHz Bandwidth.
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• Digital Cellular: dual band mobile phone etc.
ORDERING INFORMATION
Part Number
µPG2126TB-E3
Package
Marking
6-pin super minimold
G2K
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2126TB
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10019EJ02V0DS (2nd edition)
Date Published January 2002 CP(K)
Printed in Japan
The mark ! shows major revised points.
 NEC Compound Semiconductor Devices 2001, 2002
µPG2126TB
PIN CONNECTIONS, MARKING AND INTERNAL BLOCK DIAGRAM
3
2
1
G2K
(Top View)
(Top View)
(Bottom View)
1
VDD1/OUTPUT1
3
4
4
3
2
GND
5
2
5
5
2
3
INPUT1
6
1
6
6
1
4
INPUT2
5
VDD2
6
VDD3/OUTPUT2
Parameter
Symbol
Ratings
Unit
VDD1, 2, 3
6.0
V
Input Power 1 (INPUT1)
Pin1
+4
dBm
Input Power 2 (INPUT2)
Pin2
−4
dBm
Supply Voltage1, 2, 3
140
Note
Power Dissipation
PD
Operating Ambient Temperature
TA
−30 to +90
°C
Storage Temperature
Tstg
−35 to +150
°C
mW
Note Mounted on double copper-clad 50 × 50 × 1.6 mm epoxy glass PWB, TA = +85°C
RECOMMENDED OPERATING RENGE (TA = +25°°C)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
VDD1, 2, 3
3.1
3.6
4.4
V
Input Power 1 (INPUT1)
Pin1
−
−
−10
dBm
Input Power 2 (INPUT2)
Pin2
−
−
−20
dBm
!
Operating Frequency 1
fopt1
893
−
960
MHz
!
Operating Frequency 2
fopt2
1 429
−
1 453
MHz
Supply Voltage1, 2, 3
2
Pin Name
4
ABSOLUTE MAXIMUM RATINGS (Unless otherwise specified, TA = +25°°C)
!
Pin No.
Data Sheet PG10019EJ02V0DS
µPG2126TB
ELECTRICAL CHARACTERISTICS -INPUT1-OUTPUT1(Unless otherwise specified, TA = +25°°C, VDD1 = 3.6 V, π/4DQPSK modulated signal input, External
input and output matching)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
893
925
960
MHz
Operating Frequency 1
fopt1
Power Gain 1
GP1
Pin = −10 dBm
14
16
18
dB
Circuit Current 1
IDD1
Pout = +8 dBm
−
16
20
mA
Adjacent Channel Power Leakage 1
Padj1
Pout = +8 dBm,
∆f = ±50 kHz, 21 kHz Bandwidth
−
−60
−55
dBc
Adjacent Channel Power Leakage 2
Padj2
Pout = +8 dBm,
∆f = ±100 kHz, 21 kHz Bandwidth
−
−70
−65
dBc
ELECTRICAL CHARACTERISTICS -INPUT2-OUTPUT2(Unless otherwise specified, TA = +25°°C, VDD2 = VDD3 = 3.6 V, π/4DQPSK modulated signal input,
External input and output matching)
Parameter
!
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
1 429
1 441
1 453
MHz
Operating Frequency 2
fopt2
Power Gain 2
GP2
Pin = −22 dBm
24
26
28
dB
Circuit Current 2
IDD2
Pout = +8 dBm
−
28
32
mA
Adjacent Channel Power Leakage 3
Padj3
Pout = +8 dBm,
∆f = ±50 kHz, 21 kHz Bandwidth
−
−60
−55
dBc
Adjacent Channel Power Leakage 4
Padj4
Pout = +8 dBm,
∆f = ±100 kHz, 21 kHz Bandwidth
−
−70
−65
dBc
Data Sheet PG10019EJ02V0DS
3
µPG2126TB
EVALUATION CIRCUIT (VDD1, 2, 3 = 3.6 V, f = 925 MHz (INPUT1-OUTPUT1), f = 1 441 MHz (INPUT2OUTPUT2))
VDD1
100 pF
8.2 nH
8.2 nH
2 pF
1.5 pF
OUT1
IN1
1
2
3
G2K
6
5
4
3 pF
8.2 nH
OUT2
IN2
12 nH
2.2 nH
100 pF
1.5 pF
100 pF
VDD3
VDD2
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10019EJ02V0DS
µPG2126TB
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
VDD1
SW AGC
800 MHz
AMP. OUT
800 MHz
AMP. IN
L2
C
3
1
C
C2
L1
C
C
7
L4
4
L3
L5
C6
C5
1.5 GHz
AMP. OUT
1.5 GHz
AMP. IN
VDD3
VDD2
COMPONENT LIST
Symbol
Rating
Part Number
Munufacturer
L1, L2, L3
8.2 nH
TFL0816-8N2
Susumu
L4
2.2 nH
TFL0816-2N2
Susumu
L5
12 nH
TFL0816-12N
Susumu
C1, C4
1.5 pF
GRM39CK1R5C50
muRata
C2, C5, C6
100 pF
GRM39CH101J50
muRata
C3
2 pF
GRM39CK020C50
muRata
C7
3 pF
GRM39CJ030C50
muRata
Data Sheet PG10019EJ02V0DS
5
µPG2126TB
PACKAGE DIMENSIONS
6-PIN SUPER MINIMOLD (UNIT: mm)
2.1±0.1
0.2+0.1
–0.05
0.65
0.65
1.3
2.0±0.2
1.25±0.1
6
Data Sheet PG10019EJ02V0DS
0.15+0.1
–0.05
0 to 0.1
0.7
0.9±0.1
0.1 MIN.
µPG2126TB
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
VPS
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 3 times
: 0.2%(Wt.) or below
Peak temperature (package surface temperature)
Time at temperature of 200°C or higher
Preheating time at 120 to 150°C
: 215°C or below
: 25 to 40 seconds
: 30 to 60 seconds
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 3 times
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
IR260
VP215
WS260
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
Maximum chlorine content of rosin flux (% mass)
: 1 time
: 0.2%(Wt.) or below
Peak temperature (pin temperature)
: 350°C or below
Soldering time (per side of device)
Maximum chlorine content of rosin flux (% mass)
: 3 seconds or less
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10019EJ02V0DS
7
µPG2126TB
• The information in this document is current as of January, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
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agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
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redundancy, fire-containment, and anti-failure features.
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developed based on a customer-designated "quality assurance program" for a specific application. The
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Customers must check the quality grade of each semiconductor product before using it in a particular
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4 - 0110
8
Data Sheet PG10019EJ02V0DS
µPG2126TB
SAFETY INFORMATION ON THIS PRODUCT
Caution
GaAs Products
The product contains gallium arsenide, GaAs.
GaAs vapor and powder are hazardous to human health if inhaled or ingested.
• Do not destroy or burn the product.
• Do not cut or cleave off any part of the product.
• Do not crush or chemically dissolve the product.
• Do not put the product in the mouth.
Follow related laws and ordinances for disposal. The product should be excluded from general
industrial waste or household garbage.
Business issue
NEC Compound Semiconductor Devices, Ltd.
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected]
NEC Compound Semiconductor Devices Hong Kong Limited
Hong Kong Head Office
FAX: +852-3107-7309
TEL: +852-3107-7303
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
FAX: +82-2-528-0302
TEL: +82-2-528-0301
NEC Electron Devices European Operations
http://www.nec.de/
TEL: +49-211-6503-101 FAX: +49-211-6503-487
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500 FAX: +1-408-988-0279
Technical issue
NEC Compound Semiconductor Devices, Ltd.
http://www.csd-nec.com/
Sales Engineering Group, Sales Division
E-mail: [email protected] FAX: +81-44-435-1918
0110