VN2222LL Preferred Device Small Signal MOSFET 150 mAmps, 60 Volts N–Channel TO–92 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) VGS VGSM ±20 ±40 Vdc Vpk ID IDM 150 1000 PD 400 3.2 mW mW/°C TJ, Tstg –55 to +150 °C Drain Current – Continuous – Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range 150 mAMPS 60 VOLTS RDS(on) = 7.5 Ω N–Channel D mAdc G S THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RθJA 312.5 °C/W TL 300 °C Maximum Lead Temperature for Soldering Purposes, 1/16″ from case for 10 seconds TO–92 CASE 29 Style 22 12 3 MARKING DIAGRAM & PIN ASSIGNMENT VN2222LL YWW 1 Source 3 Drain 2 Gate Y WW = Year = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2000 November, 2000 – Rev. 2 1 Publication Order Number: VN2222LL/D VN2222LL ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)DSS 60 – Vdc – – 10 500 IGSSF – –100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.6 2.5 Vdc Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125°C) rDS(on) – – 7.5 13.5 Drain–Source On–Voltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) µAdc IDSS Gate–Body Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1.) On–State Drain Current (VGS = 10 Vdc, VDS ≥ 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc) Ω – – Vdc 1.5 3.75 ID(on) 750 – mA gfs 100 – µmhos Ciss – 60 pF Coss – 25 Crss – 5.0 ton – 10 toff – 10 DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 25 Vdc, Vd VGS = 0 0, f = 1.0 MHz) Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 1.) Turn–On Delay Time Turn–Off Delay Time (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 Ω, RL = 23 Ω) 1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 ns VN2222LL 1 2 VGS = 10 V 9V 1.4 1.2 8V 1 7V 0.8 0.6 6V 0.4 5V 4V 0.2 r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 25°C VDS = 10 V 0.8 -55°C 125°C 0.6 0.4 0.2 3V 0 1 2 3 4 5 6 7 8 9 0 10 4 5 6 7 8 Figure 2. Transfer Characteristics VGS = 10 V ID = 200 mA 1.6 1.4 1.2 1 0.8 0.6 0.4 -60 3 Figure 1. Ohmic Region 2.2 1.8 2 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.4 2 1 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) -20 +20 +60 T, TEMPERATURE (°C) +140 +100 VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) I D, DRAIN CURRENT (AMPS) 1.8 1.6 I D, DRAIN CURRENT (AMPS) TA = 25°C VDS = VGS ID = 1 mA 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 0 +20 +60 T, TEMPERATURE (°C) +100 Figure 4. Temperature versus Gate Threshold Voltage ORDERING INFORMATION Package Shipping VN2222LL TO–92 1000 Unit/Box VN2222LLRL TO–92 2000 Tape & Reel VN2222RLRA TO–92 2000 Tape & Reel VN2222RLRM TO–92 1000 Unit/Box http://onsemi.com 3 10 1.2 1.15 Figure 3. Temperature versus Static Drain–Source On–Resistance Device 9 +140 VN2222LL PACKAGE DIMENSIONS TO–92 CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 4 VN2222LL/D