ETC VND830P

VND830P
®
DOUBLE CHANNEL HIGH SIDE DRIVER
TARGET SPECIFICATION
TYPE
VND830P
RDS(on)
60 mΩ (*)
IOUT
6 A (*)
VCC
36 V
(*) Per each channel
CMOS COMPATIBLE INPUTS
OPEN DRAIN STATUS OUTPUTS
■ ON STATE OPEN LOAD DETECTION
■ OFF STATE OPEN LOAD DETECTION
■ SHORTED LOAD PROTECTION
■ UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
■ LOSS OF GROUND PROTECTION
■ VERY LOW STAND-BY CURRENT
■ REVERSE BATTERY PROTECTION (**)
■
■
SO-16L
ORDER CODES
PACKAGE
SO-16L
DESCRIPTION
The VND830P is a monolithic device made by
using
STMicroelectronics
VIPower
M0-3
Technology, intended for driving any kind of load
with one side connected to ground. Active VCC pin
voltage clamp protects the devices against low
TUBE
VND830P
T&R
VND830P13TR
energy
spikes
(see
ISO7637
transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
device detects open load condition both is on and
off state. Output shorted to VCC is detected in the
off state. Device automatically turns off in case of
ground pin disconnection.
BLOCK DIAGRAM
VCC
VCC
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
GND
OUTPUT1
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
LOGIC
DRIVER 2
OUTPUT2
OVERTEMP. 1
OPENLOAD ON 1
CURRENT LIMITER 2
INPUT2
OPENLOAD OFF 1
OPENLOAD ON 2
STATUS2
OPENLOAD OFF 2
OVERTEMP. 2
(**) See application schematic at page 8
October 2003 - Revision 1.2 (Working document)
1/19
This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice.
VND830P
ABSOLUTE MAXIMUM RATING
Symbol
VCC
- VCC
- IGND
IOUT
- IOUT
IIN
ISTAT
VESD
EMAX
Ptot
Tj
Tc
Tstg
Parameter
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
Value
41
- 0.3
- 200
Internally Limited
-6
+/- 10
+/- 10
Unit
V
V
mA
A
A
mA
mA
- INPUT
4000
V
- STATUS
4000
V
- OUTPUT
5000
V
- VCC
Maximum Switching Energy
5000
V
102
mJ
8.3
Internally Limited
- 40 to 150
- 55 to 150
W
°C
°C
°C
(L=1.8mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=9A)
Power Dissipation Tlead=25°C
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
CONNECTION DIAGRAM (TOP VIEW)
1
VCC
16
VCC
OUTPUT 1
N.C.
GND
OUTPUT 1
INPUT 1
OUTPUT 1
STATUS 1
STATUS 2
OUTPUT 2
OUTPUT 2
INPUT 2
8
VCC
9
OUTPUT 2
VCC
CURRENT AND VOLTAGE CONVENTIONS
IS
IIN1
VCC
VCC
INPUT 1
ISTAT1
VIN1
STATUS 1
VSTAT1
IOUT1
IIN2
OUTPUT 1
INPUT 2
VIN2 ISTAT2
IOUT2
STATUS 2
VSTAT2
GND
OUTPUT 2
VOUT2
IGND
2/19
VOUT1
VND830P
THERMAL DATA
Symbol
Rthj-lead
Parameter
Thermal Resistance Junction-lead
Value
15
Unit
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
65 (*)
°C/W
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35µm thick) connected to all VCC pins. Horizontal
mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40°C< Tj <150°C, unless otherwise specified)
(Per each channel)
POWER OUTPUT
Symbol
VCC (**)
VUSD (**)
VOV (**)
RON
IS (**)
IL(off1)
IL(off2)
IL(off3)
IL(off4)
Parameter
Operating Supply Voltage
Undervoltage Shut-down
Overvoltage Shut-down
On State Resistance
Supply Current
Off State Output Current
Off State Output Current
Off State Output Current
Off State Output Current
Test Conditions
Min
5.5
3
36
Typ
13
4
Max
36
5.5
IOUT =2A; Tj =25 °C
60
Unit
V
V
V
mΩ
IOUT =2A; VCC> 8V
Off State; VCC=13V; VIN=VOUT=0V
12
120
40
mΩ
µA
Off State; VCC=13V; VIN=VOUT=0V;
Tj=25°C
12
25
µA
On State; VCC=13V; VIN=5V; IOUT=0A
5
7
50
0
5
3
mA
µA
µA
µA
µA
Typ
Max
Unit
VIN=VOUT=0V
VIN=0V; VOUT=3.5V
VIN=VOUT=0V; Vcc=13V; Tj =125°C
VIN=VOUT=0V; Vcc=13V; Tj =25°C
0
-75
Test Conditions
RL=6.5Ω from VIN rising edge to
VOUT=1.3V
RL=6.5Ω from VIN falling edge to
VOUT=11.7V
Min
(**) Per device
SWITCHING (VCC =13V)
Symbol
Parameter
td(on)
Turn-on Delay Time
td(off)
Turn-off Delay Time
dV/dt(on)
Turn-on Voltage Slope
RL=6.5Ω from VOUT=1.3V to
VOUT=10.4V
dV/dt(off)
Turn-off Voltage Slope
RL=6.5Ω from VOUT=11.7V to
VOUT=1.3V
30
µs
30
µs
See
relative
diagram
See
relative
diagram
V/µs
V/µs
LOGIC INPUT
Symbol
VIL
IIL
VIH
IIH
Vhyst
VICL
Parameter
Input Low Level
Low Level Input Current
Input High Level
High Level Input Current
Input Hysteresis Voltage
Input Clamp Voltage
Test Conditions
VIN = 1.25V
Min
Typ
1
3.25
VIN = 3.25V
IIN = 1mA
IIN = -1mA
Max
1.25
10
0.5
6
6.8
-0.7
8
Unit
V
µA
V
µA
V
V
V
3/19
1
VND830P
ELECTRICAL CHARACTERISTICS (continued)
VCC - OUTPUT DIODE
Symbol
VF
Parameter
Forward on Voltage
Test Conditions
-IOUT=2A; Tj=150°C
Min
Typ
Max
0.6
Unit
V
STATUS PIN
Symbol
VSTAT
ILSTAT
CSTAT
VSCL
Parameter
Test Conditions
Status Low Output Voltage ISTAT= 1.6 mA
Status Leakage Current
Normal Operation; VSTAT= 5V
Status Pin Input
Normal Operation; VSTAT= 5V
Capacitance
ISTAT= 1mA
Status Clamp Voltage
ISTAT= - 1mA
Min
6
Typ
6.8
Max
0.5
10
Unit
V
µA
100
pF
8
V
-0.7
V
PROTECTIONS
Symbol
TTSD
TR
Thyst
TSDL
Ilim
Vdemag
Parameter
Shut-down Temperature
Reset Temperature
Thermal Hysteresis
Status Delay in Overload
Conditions
Current limitation
Turn-off Output Clamp
Voltage
Test Conditions
Min
150
135
7
Typ
175
6
9
5.5V < VCC < 36V
IOUT=2A; L= 6mH
Unit
°C
°C
°C
20
µs
15
A
15
A
15
Tj>TTSD
VCC=13V
Max
200
VCC-41 VCC-48 VCC-55
V
OPENLOAD DETECTION
Symbol
IOL
tDOL(on)
VOL
tDOL(off)
Parameter
Openload ON State
Detection Threshold
Openload ON State
Detection Delay
Openload OFF State
Voltage Detection
Threshold
Openload Detection Delay
at Turn Off
Test Conditions
Min
Typ
Max
Unit
50
100
200
mA
200
µs
3.5
V
1000
µs
VIN=5V
IOUT=0A
VIN=0V
1.5
OPEN LOAD STATUS TIMING (with external pull-up)
IOUT< IOL
VOUT > VOL
VINn
OVERTEMP STATUS TIMING
Tj > TTSD
VINn
VSTATn
VSTATn
tSDL
tDOL(off)
4/19
2
2.5
tDOL(on)
tSDL
VND830P
Switching time Waveforms
VOUTn
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
10%
t
VINn
td(on)
td(off)
t
TRUTH TABLE
CONDITIONS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > VOL
Output Current < IOL
INPUT
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
OUTPUT
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
STATUS
H
H
H
(Tj < TTSD) H
(Tj > TTSD) L
H
L
X
X
H
H
L
H
H
L
5/19
VND830P
ELECTRICAL TRANSIENT REQUIREMENTS ON VCC PIN
ISO T/R 7637/1
Test Pulse
I
II
TEST LEVELS
III
IV
1
2
3a
3b
4
5
-25 V
+25 V
-25 V
+25 V
-4 V
+26.5 V
-50 V
+50 V
-50 V
+50 V
-5 V
+46.5 V
-75 V
+75 V
-100 V
+75 V
-6 V
+66.5 V
-100 V
+100 V
-150 V
+100 V
-7 V
+86.5 V
ISO T/R 7637/1
Test Pulse
1
2
3a
3b
4
5
CLASS
C
E
6/19
I
C
C
C
C
C
C
TEST LEVELS RESULTS
II
III
C
C
C
C
C
C
C
C
C
C
E
E
Delays and
Impedance
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
IV
C
C
C
C
C
E
CONTENTS
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be returned
to proper operation without replacing the device.
VND830P
Figure1: Waveforms
NORMAL OPERATION
INPUTn
OUTPUT VOLTAGEn
STATUSn
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUTn
OUTPUT VOLTAGEn
STATUSn
undefined
OVERVOLTAGE
VCC<VOV
VCC
INPUTn
OUTPUT VOLTAGEn
STATUSn
OPEN LOAD with external pull-up
INPUTn
VOUT>VOL
OUTPUT VOLTAGEn
VOL
STATUSn
OPEN LOAD without external pull-up
INPUTn
OUTPUT VOLTAGEn
STATUSn
OVERTEMPERATURE
Tj
TTSD
TR
INPUTn
OUTPUT CURRENTn
STATUSn
7/19
1
VND830P
APPLICATION SCHEMATIC
+5V +5V
+5V
VCC
Rprot
STATUS1
Dld
µC
Rprot
INPUT1
OUTPUT1
Rprot
STATUS2
Rprot
INPUT2
OUTPUT2
GND
RGND
VGND
GND PROTECTION
REVERSE BATTERY
NETWORK
AGAINST
Solution 1: Resistor in the ground line (RGND only). This
can be used with any type of load.
The following is an indication on how to dimension the
RGND resistor.
1) RGND ≤ 600mV / IS(on)max.
2) RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in RGND (when VCC<0: during reverse
battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where IS(on)max becomes the
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the RGND will
produce a shift (IS(on)max * RGND) in the input thresholds
and the status output values. This shift will vary
depending on many devices are ON in the case of several
high side drivers sharing the same RGND.
8/19
DGND
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2 (see below).
Solution 2: A diode (DGND) in the ground line.
A resistor (RGND=1kΩ) should be inserted in parallel to
DGND if the device will be driving an inductive load.
This small signal diode can be safely shared amongst
several different HSD. Also in this case, the presence of
the ground network will produce a shift (j600mV) in the
input threshold and the status output values if the
microprocessor ground is not common with the device
ground. This shift will not vary if more than one HSD
shares the same diode/resistor network.
Series resistor in INPUT and STATUS lines are also
required to prevent that, during battery voltage transient,
the current exceeds the Absolute Maximum Rating.
Safest configuration for unused INPUT and STATUS pin
is to leave them unconnected.
LOAD DUMP PROTECTION
Dld is necessary (Voltage Transient Suppressor) if the
load dump peak voltage exceeds VCC max DC rating. The
same applies if the device will be subject to transients on
the VCC line that are greater than the ones shown in the
ISO T/R 7637/1 table.
VND830P
µC I/Os PROTECTION:
If a ground protection network is used and negative
transient are present on the VCC line, the control pins will
be pulled negative. ST suggests to insert a resistor (Rprot)
in line to prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the
leakage current of µC and the current required by the
HSD I/Os (Input levels compatibility) with the latch-up limit
of µC I/Os.
-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤ Rprot ≤ 65kΩ.
Recommended Rprot value is 10kΩ.
9/19
VND830P
OPEN LOAD DETECTION IN OFF STATE
2) no misdetection when load is disconnected: in this
case the VOUT has to be higher than VOLmax; this
results in the following condition RPU<(VPU–VOLmax)/
IL(off2).
Because Is(OFF) may significantly increase if Vout is pulled
high (up to several mA), the pull-up resistor RPU should
be connected to a supply that is switched OFF when the
module is in standby.
The values of VOLmin, VOLmax and IL(off2) are available in
the Electrical Characteristics section.
Off state open load detection requires an external pull-up
resistor (RPU) connected between OUTPUT pin and a
positive supply voltage (VPU) like the +5V line used to
supply the microprocessor.
The external resistor has to be selected according to the
following requirements:
1) no false open load indication when load is connected:
in this case we have to avoid VOUT to be higher than
VOlmin; this results in the following condition
VOUT=(VPU/(RL+RPU))RL<VOlmin.
Open Load detection in off state
V batt.
VPU
VCC
RPU
INPUT
DRIVER
+
LOGIC
IL(off2)
OUT
+
R
STATUS
VOL
GROUND
10/19
1
RL
VND830P
High Level Input Current
Off State Output Current
Iih (uA)
IL(off1) (uA)
5
2.5
4.5
2.25
Off state
Vcc=36V
Vin=Vout=0V
2
1.75
Vin=3.25V
4
3.5
1.5
3
1.25
2.5
1
2
0.75
1.5
0.5
1
0.25
0.5
0
0
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
50
75
100
125
150
175
Tc (°C)
Tc (°C)
Input Clamp Voltage
Status Leakage Current
Vicl (V)
Ilstat (uA)
8
0.05
7.8
Iin=1mA
7.6
0.04
7.4
Vstat=5V
0.03
7.2
7
6.8
0.02
6.6
6.4
0.01
6.2
6
0
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
Tc (°C)
50
75
100
125
150
175
Tc (°C)
Status Low Output Voltage
Status Clamp Voltage
Vscl (V)
Vstat (V)
8
0.8
7.8
0.7
Istat=1mA
Istat=1.6mA
7.6
0.6
7.4
0.5
7.2
7
0.4
6.8
0.3
6.6
0.2
6.4
0.1
6.2
6
0
-50
-25
0
25
50
75
Tc (°C)
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
11/19
VND830P
On State Resistance Vs Tcase
On State Resistance Vs VCC
Ron (mOhm)
Ron (mOhm)
160
120
Tc=150°C
110
140
Iout=2A
Vcc=8V; 13V & 36V
120
100
90
80
100
70
80
60
Tc=25°C
50
60
40
40
Tc= - 40°C
30
20
20
Iout=5A
10
0
0
-50
-25
0
25
50
75
100
125
150
175
5
10
15
20
Tc (°C)
25
30
35
40
Vcc (V)
Openload On State Detection Threshold
Input High Level
Iol (mA)
Vih (V)
1250
3.6
1200
3.4
Vcc=13V
Vin=5V
1150
3.2
1100
3
1050
1000
2.8
950
2.6
900
2.4
850
2.2
800
750
2
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (ºC)
50
75
100
125
150
175
100
125
150
175
Tc (°C)
Input Low Level
Input Hysteresis Voltage
Vil (V)
Vhyst (V)
2.6
1.5
1.4
2.4
1.3
2.2
1.2
2
1.1
1.8
1
0.9
1.6
0.8
1.4
0.7
1.2
0.6
1
0.5
-50
-25
0
25
50
75
Tc (°C)
12/19
100
125
150
175
-50
-25
0
25
50
75
Tc (°C)
VND830P
Overvoltage Shutdown
Openload Off State Voltage Detection Threshold
Vov (V)
Vol (V)
50
5
48
4.5
46
4
44
3.5
Vin=0V
42
3
40
2.5
38
2
36
1.5
34
1
32
0.5
30
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
100
125
150
175
100
125
150
175
Turn-off Voltage Slope
dVout/dt(on) (V/ms)
dVout/dt(off) (V/ms)
800
600
550
Vcc=13V
Rl=6.5Ohm
600
75
Tc (°C)
Turn-on Voltage Slope
700
50
Vcc=13V
Rl=6.5Ohm
500
500
450
400
400
300
350
200
300
100
250
0
200
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
-50
-25
0
25
50
75
Tc (ºC)
ILIM Vs Tcase
Ilim (A)
20
18
Vcc=13V
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
13/19
VND830P
Maximum turn off current versus load inductance
ILMAX (A)
100
10
A
B
C
1
0.1
1
10
100
L(mH)
A = Single Pulse at TJstart=150ºC
B= Repetitive pulse at TJstart=100ºC
C= Repetitive Pulse at TJstart=125ºC
Conditions:
VCC=13.5V
Values are generated with RL=0Ω
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed
the temperature specified above for curves B and C.
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
14/19
VND830P
SO-16L THERMAL DATA
SO-16L PC Board
Layout condition of Rth and Zth measurements (PCB FR4 area= 41mm x 48mm, PCB thickness=2mm,
Cu thickness=35µm, Copper areas: 0.5cm2, 6cm2).
Rthj-amb Vs PCB copper area in open box free air condition
70
RTH j-amb (°C/W)
65
60
55
50
45
40
0
1
2
3
4
5
6
7
PCB Cu heatsink area (cm^2)
15/19
VND830P
SO-16L Thermal Impedance Junction Ambient Single Pulse
ZTH (°C/W)
1000
100
0.5 cm2
6 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
Time (s)
Thermal fitting model of a double channel HSD
in SO-16L
10
100
1000
Pulse calculation formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where
δ = tp ⁄ T
Thermal Parameter
Tj_1
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd1
Tj_2
C1
C2
R1
R2
Pd2
T_amb
16/19
Area/island (cm2)
R1 (°C/W)
R2 (°C/W)
R3 ( °C/W)
R4 (°C/W)
R5 (°C/W)
R6 (°C/W)
C1 (W.s/°C)
C2 (W.s/°C)
C3 (W.s/°C)
C4 (W.s/°C)
C5 (W.s/°C)
C6 (W.s/°C)
0.5
0.15
0.8
2.2
12
15
37
0.0006
2.10E-03
1.50E-02
0.14
1
3
6
22
5
VND830P
SO-16L MECHANICAL DATA
DIM.
mm.
MIN.
TYP
A
a1
inch
MAX.
MIN.
TYP.
2.65
0.1
0.2
b
0.35
b1
0.23
a2
0.104
0.004
0.008
0.49
0.014
0.019
0.32
0.009
0.012
2.45
C
MAX.
0.096
0.5
0.020
c1
45° (typ.)
D
10.1
10.5
0.397
0.413
E
10.0
10.65
0.393
0.419
e
1.27
e3
8.89
F
7.4
L
0.5
M
S
0.050
0.350
7.6
0.291
1.27
0.020
0.75
0.300
0.050
0.029
8° (max.)
17/19
1
VND830P
SO-16L TUBE SHIPMENT (no suffix)
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
B
50
1000
532
3.5
13.8
0.6
All dimensions are in mm.
A
TAPE AND REEL SHIPMENT (suffix “13TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
16.4
60
22.4
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
16
4
12
1.5
1.5
7.5
6.5
2
End
Start
Top
No components
Components
No components
cover
tape
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
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VND830P
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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