WEDF1M32B-XXX5 HI-RELIABILITY PRODUCT 1Mx32 5V FLASH MODULE ADVANCED* FEATURES ■ ■ ■ ■ ■ ■ ■ Access Times of 70, 90, 120ns ■ Packaging: • 66 pin, PGA Type, 1.185" square, Hermetic Ceramic HIP (Package 401) • 68 lead, 22mm Low Profile CQFP, 4.6mm (0.180"), (Package 509) ■ Sector Architecture • One 16KByte Sectors • Two 8KByte Sectors • One 32KByte Sectors • Fifteen 64KByte Sectors ■ 1,000,000 Erase/Program Cycles FIG. 1 Organized as 1Mx32, user configurable as 2Mx16 or 4Mx8. Commercial, Industrial and Military Temperature Ranges 5V ± 10% for Read and Write Operations. Low Power CMOS Embedded Erase and Program Algorithm Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Weight WEDF1M32B-XG2TX5 - 8 grams typical WEDF1M32B-XHX5 - 13 grams typical * This data sheet describes a product that may or may not be under development and is subject to change or cancellation without notice. PIN CONFIGURATION FOR WEDF1M32B-XHX5 TOP VIEW 1 12 23 PIN DESCRIPTION 34 45 56 I/O0-31 Data Inputs/Outputs A0-19 Address Inputs I/O30 WE Write Enable I/O29 CS1-4 Chip Selects OE Output Enable I/O8 RESET I/O15 I/O24 VCC I/O31 I/O9 CS2 I/O14 I/O25 CS4 I/O10 GND I/O13 I/O26 NC A7 I/O27 I/O28 OE A12 A4 A1 A9 A17 NC A5 A2 GND Ground A0 A15 WE A13 A6 A3 NC Not Connected A18 VCC I/O7 A8 NC I/O23 A14 I/O11 I/O12 A16 A10 A11 CS1 I/O6 I/O16 CS3 I/O22 I/O1 A19 I/O5 I/O17 GND I/O21 I/O2 I/O3 I/O4 I/O18 I/O19 I/O20 22 33 44 55 CS 2 CS3 CS 4 1M x 8 1M x 8 1M x 8 66 8 I/O0-7 May 1999 Rev. 1 Power Supply RESET WE OE A0-19 1M x 8 11 Reset VCC BLOCK DIAGRAM CS 1 I/O0 RESET 1 8 I/O8-15 8 I/O16-23 8 I/O24-31 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WEDF1M32B-XXX5 FIG. 2 PIN CONFIGURATION FOR WEDF1M32B-XG2TX5 PIN DESCRIPTION RESET A0 A1 A2 A3 A4 A5 CS3 GND CS4 WE1 A6 A7 A8 A9 A10 VCC TOP VIEW 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7 GND I/O8 I/O9 I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 I/O16 I/O17 I/O18 I/O19 I/O20 I/O21 I/O22 I/O23 GND I/O24 I/O25 I/O26 I/O27 I/O28 I/O29 I/O30 I/O31 0.940" Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable RESET Reset VCC Power Supply WE 1 CS 1 WE 2 CS 2 WE 3 CS 3 WE 4 CS 4 RESET OE A0-19 A16 CS1 OE CS2 A17 WE2 WE3 WE4 A18 A19 NC A15 A14 A13 A12 A11 VCC Data Inputs/Outputs A0-19 The White 68 lead G2T CQFP GND Ground fills the same fit and function as NC Not Connected the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. BLOCK DIAGRAM 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 1M x 8 8 I/O0-7 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 I/O0-31 2 1M x 8 8 I/O8-15 1M x 8 8 I/O16-23 1M x 8 8 I/O24-31 WEDF1M32B-XXX5 RECOMMENDED OPERATING CONDITIONS ABSOLUTE MAXIMUM RATINGS Parameter Parameter Unit Voltage on Any Pin with Respect to GND – VCC and VPP) -0.5 to +7.0 Voltage with Respect to GND – A9, OE, and RESET (2) -2.0 to +12.5 V Voltage with Respect to GND – All other pins (1) -2.0 to +7.0 V 200 mA Output Short Circuit Current V Symbol Min Max Unit Supply Voltage V CC 4.5 5.5 V Input High Voltage V IH 2.0 V CC + 0.5 V Input Low Voltage V IL -0.5 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C CAPACITANCE (TA = +25°C) NOTES: 1. Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns. Maximum DC voltage on input/output pins is VCC + 0.5V which, during transitions, may overshoot to V CC + 2.0V for periods <20ns. 2. Minimum DC input voltage on pins A 9, OE, and RESET is -0.5V. During voltage transitions, A 9, OE, and RESET may undershoot Vss to -2.0V for periods of up to 20ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5V which may overshoot to +13.5V for periods up to 20ns. 3. Output shorted for no more than one second. No more than one output shorted at a time. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a Stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Conditions Max Unit OE capacitance COE VIN = 0 V, f = 1.0 MHz 50 pF WE1-4 capacitance CWE VIN = 0 V, f = 1.0 MHz 20 pF CS1-4 capacitance CCS VIN = 0 V, f = 1.0 MHz 20 pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 20 pF Address input capacitance CAD VIN = 0 V, f = 1.0 MHz 50 pF This parameter is guaranteed by design but not tested. DATA RETENTION Parameter Test Conditions Min Unit Minimum Pattern Data 150°C 10 Years Retention Time 125°C 20 Years FIG. 3 AC TEST CONDITIONS AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source 3 Typ Unit Input Pulse Levels VIL = 0, VIH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: V Z is programmable from -2V to +7V. I OL & IOH programmable from 0 to 16mA. Tester Impedance Z 0 = 75 Ω. V Z is typically the midpoint of V OH and V OL. I OL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WEDF1M32B-XXX5 DC CHARACTERISTICS - CMOS COMPATIBLE (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol Conditions Min Max Unit Input Leakage Current I LI V IN = VCC to GND 10 µA Output Leakage Current I LO V OUT = VCC to GND 10 µA V CC Read Current (1,2) I CC1 CS = VIL, OE V IH, f = 5 MHz, I OUT = 0mA 160 mA V CC Write Current (2,3,4) I CC2 CS = VIL, OE V IH 200 mA VCC Standby Current (2,5) ICC3 CS = RESET = OE = VIH, f = 5MHz 20.0 mA Output Low Voltage V OL V CC = 4.5, I OL = 5.8 mA 0.45 V Output High Voltage V OH V CC = 4.5, I OH = -2.5 mA Low V CC Lockout Voltage (4) V LKO 4.2 V 2.4 V 3.2 NOTES: 1. The Icc current listed is typically less than 2mA/MHz, with OE at VIH . 2. Maximum Icc specifications are tested with VCC = V CC max. 3. I CC active while Embedded Erase or Embedded Program is in progress. 4. Not 100% tested. 5. I CC3 = 20µA max at extended temperature (> +85°C). AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS - WE CONTROLLED (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol -70 Min -90 Max Min -120 Max Min Unit Max Write Cycle Time tAVAV tWC 70 90 120 ns Chip Select Setup Time tELWL t CS 0 0 0 ns Write Enable Pulse Width tWLWH tWP 35 45 50 ns Address Setup Time tAVWH t AS 0 0 0 ns Data Setup Time tDVWH tDS 30 45 50 ns Data Hold Time tWHDX tDH 0 0 0 ns Address Hold Time tWHAX tAH 45 45 50 ns Chip Select Hold Time tWHEH tCH 0 0 0 ns Write Enable Pulse Width High tWHWL tWPH 20 20 20 ns Programming Operation (2) tWHWH1 300 300 300 µs Sector Erase Operation (3) tWHWH2 8 8 8 sec Write Recovery before Read tWHGL 50 sec 0 Chip Programming Time NOTES: 1. Guaranteed by design, not tested. 2. Typical value for t WHWH1 is 7µs. 3. Typical value for t WHWH2 is 1sec. White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 0 50 4 µs 0 50 WEDF1M32B-XXX5 AC CHARACTERISTICS – WRITE OPERATION - CS CONTROLLED (1) (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol -70 Min -90 Max Min -120 Max Min Unit Max Write Enable Cycle Time tAVAV tWC 70 90 120 Write Enable Setup Time tWLEL tWS 0 0 0 ns Chip Select Pulse Width tELEH tCP 35 45 50 ns Address Setup Time tAVEH tAS 0 0 0 ns Data Setup Time tDVEH tDS 30 45 50 ns Data Hold Time tEHDX tDH 0 0 5 ns Address Hold Time tEHAX tAH 45 45 50 ns Write Enable Hold Time tEHWH tWH 0 0 0 ns Chip Select Pulse Width High tEHEL tEPH 20 Programming Operation (1) tWHWH1 300 300 300 µs Sector Erase Operation (2) tWHWH2 8 8 8 sec Write Recovery before Read tEHGL 20 0 ns 20 0 ns µs 0 NOTES: 1. Typical value for t WHWH1 is 7µs. 2. Typical value for t WHWH2 is 1sec. AC CHARACTERISTICS – READ-ONLY OPERATIONS (VCC = 5.0V, GND = 0V, TA = -55°C to +125°C) Parameter Symbol -70 Min Read Cycle Time t AVAV t RC Address Access Time t AVQV t ACC Chip Select to Output Valid (1) t ELQV t CE Output Enable to Output Valid (1) t GLQV t OE Chip Select to Output Low Z (2) t ELQX t LZ Chip Select High to Output High Z (2) t EHQZ t HZ Output Enable to Output Low Z (2) t GLOX t OLZ Output Enable High to Output High Z (2) t GHQZ t DF Output Hold from Addresses, CS or OE Change, Whichever is First (2) -90 Max 70 t OH Min 90 70 Min Unit Max 120 ns 90 120 70 90 120 ns 30 35 50 ns 50 ns 30 ns 0 0 20 0 0 20 0 20 0 -120 Max 0 ns 0 20 0 ns ns ns NOTES: 1. OE may be delayed up to t CE-t OE after the falling edge of CS without impact on tCS . 2. Guaranteed by design, not tested. 5 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WEDF1M32B-XXX5 PACKAGE 509: 68 LEAD, LOW PROFILE CERAMIC QUAD FLAT PACK, CQFP (G2T) 25.15 (0.990) ± 0.26 (0.010) SQ 4.57 (0.180) MAX 22.36 (0.880) ± 0.26 (0.010) SQ 0.27 (0.011) ± 0.04 (0.002) 0.25 (0.010) REF Pin 1 R 0.25 (0.010) 24.03 (0.946) ± 0.26 (0.010) 0.19 (0.007) ± 0.06 (0.002) 1° / 7° 1.0 (0.040) ± 0.127 (0.005) 23.87 (0.940) REF DETAIL A 1.27 (0.050) TYP SEE DETAIL "A" 0.38 (0.015) ± 0.05 (0.002) 20.3 (0.800) REF The White 68 lead G2T CQFP fills the same fit and function as the JEDEC 68 lead CQFJ or 68 PLCC. But the G2T has the TCE and lead inspection advantage of the CQFP form. 0.940" TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 6 WEDF1M32B-XXX5 PACKAGE 401: 66 PIN, PGA TYPE, CERAMIC HEX-IN-LINE PACKAGE, HIP (H) 30.1 (1.185) ± 0.38 (0.015) SQ PIN 1 IDENTIFIER SQUARE PAD ON BOTTOM 25.4 (1.0) TYP 6.22 (0.245) MAX 3.81 (0.150) ± 0.1 (0.005) 1.27 (0.050) ± 0.1 (0.005) 0.76 (0.030) ± 0.1 (0.005) 2.54 (0.100) TYP 15.24 (0.600) TYP 1.27 (0.050) TYP DIA 0.46 (0.018) ± 0.05 (0.002) DIA 25.4 (1.0) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 WEDF1M32B-XXX5 ORDERING INFORMATION WED F 1M32 B - XXX X X 5 X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads VPP PROGRAMMING VOLTAGE 5 = 5V DEVICE GRADE: M = Military Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: H = Ceramic Hex-In-Line Package, HIP (Package 401) G2T = 22mm Ceramic Quad Flat Pack, Low Profile CQFP (Package 509) ACCESS TIME (ns) Bottom Boot Block ORGANIZATION, 1M x 32 User configurable as 2M x 16 or 4M x 8 Flash WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corporation • Phoenix, AZ • (602) 437-1520 8