WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of the chip’s 33,554,432-bit banks is organized as 4,096 rows by 512 columns by 16 bits. The MCP also incorporates two 16-bit universal bus drivers for input control signals and address. ! Package: • 219 Plastic Ball Grid Array (PBGA), 32 x 25mm ! Single 3.3V ±0.3V power supply ! Fully synchronous; all signals registered on positive edge of system clock cycle Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank; A0-11 select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. ! Internal pipelined operation; column address can be changed every clock cycle ! Internal banks for hiding row access/precharge ! Programmable Burst length 1,2,4,8 or full page ! 4096 refresh cycles ! Commercial, Industrial and Military Temperature Ranges ! Organized as 8M x 64 • User configurable as 2x8Mx32 or 4x8Mx16 ! Weight: WEDPN8M64VR-XBX - 2.5 grams typical The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, 4 or 8 locations, or the full page, with a burst terminate option. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. BENEFITS ! 41% SPACE SAVINGS ! Reduced part count The 512Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless, high-speed, random-access operation. ! Reduced trace lengths for lower parasitic capacitance ! Glueless connection to memory controller/PCI bridge ! Laminate interposer for optimum TCE match ! Suitable for hi-reliability applications ! Upgradeable to 16M x 64 density (contact factory for information) The 512Mb SDRAM is designed to operate in 3.3V, lowpower memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. * This data sheet describes a product that is subject to change without notice. All inputs and outputs are LVTTL compatible. SDRAMs offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks in order to hide precharge time and the capability to randomly change column addresses on each clock cycle during a burst access. November 2003 Rev. 4 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPN8M64VR-XBX FIG. 1 P IN CONFIGURATION TOP VIEW NOTE: DNU = Do Not Use; to be left unconnected for future upgrades. NC = Not Connected Internally. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 WEDPN8M64VR-XBX FIG. 2 FUNCTIONAL B LOCK DIAGRAM 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPN8M64VR-XBX FUNCTIONAL DESCRIPTION ating mode and a write burst mode, as shown in Figure 3. The Mode Register is programmed via the LOAD MODE REGISTER command and will retain the stored information until it is programmed again or the device loses power. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0 and BA1 select the bank, A0-11 select the row). The address bits (A0-8) registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. Mode register bits M0-M2 specify the burst length, M3 specifies the type of burst (sequential or interleaved), M4M6 specify the CAS latency, M7 and M8 specify the operating mode, M9 specifies the WRITE burst mode, and M10 and M11 are reserved for future use. The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before initiating the subsequent operation. Violating either of these requirements will result in unspecified operation. Prior to normal operation, the SDRAM must be initialized. The following sections provide detailed information covering device initialization, register definition, command descriptions and device operation. BURST LENGTH Read and write accesses to the SDRAM are burst oriented, with the burst length being programmable, as shown in Figure 3. The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. Burst lengths of 1, 2, 4 or 8 locations are available for both the sequential and the interleaved burst types, and a full-page burst is available for the sequential type. The full-page burst is used in conjunction with the BURST TERMINATE command to generate arbitrary burst lengths. INITIALIZATION SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those specified may result in undefined operation. Once power is applied to VDD and VDDQ (simultaneously) and the clock is stable (stable clock is defined as a signal cycling within timing constraints specified for the clock pin), the SDRAM requires a 100µs delay prior to issuing any command other than a COMMAND INHIBIT or a NOP. Starting at some point during this 100µs period and continuing at least through the end of this period, COMMAND INHIBIT or NOP commands should be applied. Reserved states should not be used, as unknown operation or incompatibility with future versions may result. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A1-8 when the burst length is set to two; by A2-8 when the burst length is set to four; and by A3-8 when the burst length is set to eight. The remaining (least significant) address bit(s) is (are) used to select the starting location within the block. Fullpage bursts wrap within the page if the boundary is reached. Once the 100µs delay has been satisfied with at least one COMMAND INHIBIT or NOP command having been applied, a PRECHARGE command should be applied. All banks must be precharged, thereby placing the device in the all banks idle state. Once in the idle state, two AUTO REFRESH cycles must be performed. After the AUTO REFRESH cycles are complete, the SDRAM is ready for Mode Register programming. Because the Mode Register will power up in an unknown state, it should be loaded prior to applying any operational command. BURST TYPE Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the burst type and is selected via bit M3. REGISTER DEFINITION MODE REGISTER The ordering of accesses within a burst is determined by the burst length, the burst type and the starting column address, as shown in Table 1. The Mode Register is used to define the specific mode of operation of the SDRAM. This definition includes the selection of a burst length, a burst type, a CAS latency, an operWhite Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 4 WEDPN8M64VR-XBX TABLE 1 - BURST DEFINITION FIG. 3 MODE R EGISTER D EFINITION Burst Length 2 4 8 Full Page (y) Starting Column Address A0 0 1 A1 A0 0 0 0 1 1 0 1 1 A2 A1 A0 0 0 0 0 0 1 0 1 0 0 1 1 1 0 0 1 0 1 1 1 0 1 1 1 n = A0-9/8/7 (location 0-y) Order of Accesses Within a Burst Type = Sequential Type = Interleaved 0-1 1-0 0-1 1-0 0-1-2-3 1-2-3-0 2-3-0-1 3-0-1-2 0-1-2-3 1-0-3-2 2-3-0-1 3-2-1-0 0-1-2-3-4-5-6-7 1-2-3-4-5-6-7-0 2-3-4-5-6-7-0-1 3-4-5-6-7-0-1-2 4-5-6-7-0-1-2-3 5-6-7-0-1-2-3-4 6-7-0-1-2-3-4-5 7-0-1-2-3-4-5-6 Cn, Cn + 1, Cn + 2 Cn + 3, Cn + 4... …Cn - 1, Cn… 0-1-2-3-4-5-6-7 1-0-3-2-5-4-7-6 2-3-0-1-6-7-4-5 3-2-1-0-7-6-5-4 4-5-6-7-0-1-2-3 5-4-7-6-1-0-3-2 6-7-4-5-2-3-0-1 7-6-5-4-3-2-1-0 Not Supported NOTES: 1. For full-page accesses: y = 512. 2. For a burst length of two, A1-8 select the block-of-two burst; A0 selects the starting column within the block. 3. For a burst length of four, A2-8 select the block-of-four burst; A0-1 select the starting column within the block. 4. For a burst length of eight, A3-8 select the block-of-eight burst; A0-2 select the starting column within the block. 5. For a full-page burst, the full row is selected and A0-8 select the starting column. 6. Whenever a boundary of the block is reached within a given sequence above, the following access wraps within the block. 7. For a burst length of one, A0-8 select the unique column to be accessed, and Mode Register bit M3 is ignored. 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPN8M64VR-XBX FIG. 4 CAS LATENCY CAS LATENCY Test modes and reserved states should not be used because unknown operation or incompatibility with future versions may result. The CAS latency is the delay, in clock cycles, between the registration of a READ command and the availability of the first piece of output data. The latency can be set to two or three clocks. WRITE BURST MODE If a READ command is registered at clock edge n, and the latency is m clocks, the data will be available by clock edge n+m. The I/Os will start driving as a result of the clock edge one cycle earlier (n + m - 1), and provided that the relevant access times are met, the data will be valid by clock edge n + m. For example, assuming that the clock cycle time is such that all relevant access times are met, if a READ command is registered at T0 and the latency is programmed to two clocks, the I/Os will start driving after T1 and the data will be valid by T2. Table 2 below indicates the operating frequencies at which each CAS latency setting can be used. When M9 = 0, the burst length programmed via M0-M2 applies to both READ and WRITE bursts; when M9 = 1, the programmed burst length applies to READ bursts, but write accesses are single-location (nonburst) accesses. TABLE 2 - CAS LATENCY SPEED Reserved states should not be used as unknown operation or incompatibility with future versions may result. ALLOWABLE OPERATING FREQUENCY (MHZ) CAS CAS LATENCY = 2 LATENCY = 3 -100 ≤ 66 ≤ 100 66 ≤ 50 ≤ 66 COMMANDS OPERATING MODE The Truth Table provides a quick reference of available commands. This is followed by a written description of each command. Three additional Truth Tables appear following the Operation section; these tables provide current state/ next state information. The normal operating mode is selected by setting M7and M8 to zero; the other combinations of values for M7 and M8 are reserved for future use and/or test modes. The programmed burst length applies to both READ and WRITE bursts. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 6 WEDPN8M64VR-XBX TRUTH T ABLE - COMMANDS A ND DQM O PERATION (NOTE 1) NAME (FUNCTION) CS RAS CAS WE DQM ADDR I/Os COMMAND INHIBIT (NOP) H X X X X X X NO OPERATION (NOP) L H H H X X X ACTIVE (Select bank and activate row) ( 3) L L H H X Bank/Row X READ (Select bank and column, and start READ burst) (4) L H L H L/H 8 Bank/Col X WRITE (Select bank and column, and start WRITE burst) (4) L H L L L/H 8 Bank/Col Valid BURST TERMINATE L H H L X X Active PRECHARGE (Deactivate row in bank or banks) ( 5) L L H L X Code X AUTO REFRESH or SELF REFRESH (Enter self refresh mode) (6, 7) L L L H X X X LOAD MODE REGISTER (2) L L L L X Op-Code X Write Enable/Output Enable (8) – – – – L – Active Write Inhibit/Output High-Z (8) – – – – H – High-Z NOTES: 1. CKE is HIGH for all commands shown except SELF REFRESH. 2. A0-11 define the op-code written to the Mode Register. 3. A0-11 provide row address, and BA0, BA1 determine which bank is made active. 4. A0-8 provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables the auto precharge feature; BA0, BA1 determine which bank is being read from or written to. 5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t Care.” 6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW. 7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE. 8. Activates or deactivates the I/Os during WRITEs (zero-clock delay) and READs (two-clock delay). LOAD MODE REGISTER REGISTER F UNCTION T ABLE INPUTS OE LE H L The Mode Register is loaded via inputs A0-11. See Mode Register heading in the Register Definition section. The LOAD MODE REGISTER command can only be issued when all banks are idle, and a subsequent executable command cannot be issued until tMRD is met. OUTPUT CLK A Y X X X Z L X L L L L X H H L H I L L L H I H H L H L or H X Y0(1) ACTIVE The ACTIVE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-11 selects the row. This row remains active (or open) for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. NOTES: 1. Output level before the indicated steady-state input conditions were established. COMMAND INHIBIT The COMMAND INHIBIT function prevents new commands from being executed by the SDRAM, regardless of whether the CLK signal is enabled. The SDRAM is effectively deselected. Operations already in progress are not affected. READ The READ command is used to initiate a burst read access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-8 selects the star ting column location. The value on input A10 determines whether or not AUTO PRECHARGE is used. If AUTO PRECHARGE is selected, the row being accessed will be precharged at the end of the READ burst; if AUTO PRECHARGE is not selected, the row will remain open for NO OPERATION (NOP) The NO OPERATION (NOP) command is used to perform a NOP to an SDRAM which is selected (CS is LOW). This prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPN8M64VR-XBX subsequent accesses. Read data appears on the I/Os subject to the logic level on the DQM inputs two clocks earlier. If a given DQM signal was registered HIGH, the corresponding I/Os will be High-Z two clocks later; if the DQM signal was registered LOW, the I/Os will provide valid data. PRECHARGE is nonpersistent in that it is either enabled or disabled for each individual READ or WRITE command. AUTO PRECHARGE ensures that the precharge is initiated at the earliest valid stage within a burst. The user must not issue another command to the same bank until the precharge time (tRP) is completed. This is determined as if an explicit PRECHARGE command was issued at the earliest possible time. WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA0, BA1 inputs selects the bank, and the address provided on inputs A0-8 selects the starting column location. The value on input A10 determines whether or not AUTO PRECHARGE is used. If AUTO PRECHARGE is selected, the row being accessed will be precharged at the end of the WRITE burst; if AUTO PRECHARGE is not selected, the row will remain open for subsequent accesses. Input data appearing on the I/Os is written to the memory array subject to the DQM input logic level appearing coincident with the data. If a given DQM signal is registered LOW, the corresponding data will be written to memory; if the DQM signal is registered HIGH, the corresponding data inputs will be ignored, and a WRITE will not be executed to that byte/column location. BURST TERMINATE The BURST TERMINATE command is used to truncate either fixed-length or full-page bursts. The most recently registered READ or WRITE command prior to the BURST TERMINATE command will be truncated. AUTO REFRESH AUTO REFRESH is used during normal operation of the SDRAM and is analagous to CAS-BEFORE-RAS (CBR) REFRESH in conventional DRAMs. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits “Don’t Care” during an AUTO REFRESH command. Each 128Mb SDRAM requires 4,096 AUTO REFRESH cycles every refresh period (tREF). Providing a distributed AUTO REFRESH command will meet the refresh requirement and ensure that each row is refreshed. Alternatively, 4,096 AUTO REFRESH commands can be issued in a burst at the minimum cycle rate (tRC), once every refresh period (tREF). PRECHARGE The PRECHARGE command is used to deactivate the open row in a particular bank or the open row in all banks. The bank(s) will be available for a subsequent row access a specified time (tRP) after the PRECHARGE command is issued. Input A10 determines whether one or all banks are to be precharged, and in the case where only one bank is to be precharged, inputs BA0, BA1 select the bank. Otherwise BA0, BA1 are treated as “Don’t Care.” Once a bank has been precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. SELF REFRESH* The SELF REFRESH command can be used to retain data in the SDRAM, even if the rest of the system is powered down. When in the self refresh mode, the SDRAM retains data without external clocking. The SELF REFRESH command is initiated like an AUTO REFRESH command except CKE is disabled (LOW). Once the SELF REFRESH command is registered, all the inputs to the SDRAM become “Don’t Care,” with the exception of CKE, which must remain LOW. AUTO PRECHARGE AUTO PRECHARGE is a feature which performs the same individual-bank PRECHARGE function described above, without requiring an explicit command. This is accomplished by using A10 to enable AUTO PRECHARGE in conjunction with a specific READ or WRITE command. A precharge of the bank/row that is addressed with the READ or WRITE command is automatically performed upon completion of the READ or WRITE burst, except in the full-page burst mode, where AUTO PRECHARGE does not apply. AUTO White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 Once self refresh mode is engaged, the SDRAM provides its own internal clocking, causing it to perform its own AUTO REFRESH cycles. The SDRAM must remain in self refresh mode for a minimum period equal to tRAS and may remain in self refresh mode for an indefinite period beyond that. The procedure for exiting self refresh requires a sequence 8 WEDPN8M64VR-XBX of commands. First, CLK must be stable (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) prior to CKE going back HIGH. Once CKE is HIGH, the SDRAM must have NOP commands issued (a minimum of two clocks) for tXSR, because time is required for the completion of any internal refresh in progress. Upon exiting the self refresh mode, AUTO REFRESH commands must be issued as both SELF REFRESH and AUTO REFRESH utilize the row refresh counter. *Self Refresh available in commercial and industrial temperatures only. ABSOLUTE MAXIMUM RATINGS Parameter Voltage on VDD, VDDQ Supply relative to Vss Voltage on NC or I/O pins relative to Vss Operating Temperature TA (Mil) Operating Temperature TA (Ind) Storage Temperature, Plastic -1 to 4.6 -1 to 4.6 -55 to +125 -40 to +85 -55 to +150 CAPACITANCE (NOTE 2) Unit V V °C °C °C Parameter Symbol Max Unit Input Capacitance: CLK, OE, LE CI1 16 pF Addresses, BA0-1 Input Capacitance CA 8 pF Input Capacitance: All other input-only pins CI2 8 pF Input/Output Capacitance: I/Os CIO 12 pF BGA THERMAL RESISTANCE NOTE: Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Description Symbol Max Units Notes Junction to Ambient Theta JA 13.2 0 C/W 1 Theta JB 0 C/W 1 0 C/W (No Airflow) Junction to Ball 9.0 1 NOTE 1: Refer to BGA Thermal Resistance Correlation application note at www.whiteedc.com in the application notes section for modeling conditions. Junction to Case (Top) Theta JC 3.4 DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS (NOTES 1, 6) (VCC = +3.3V ±0.3V; TA = -55°C TO +125°C) Parameter/Condition Symbol Units Supply Voltage VCC Min 3 Input High Voltage: Logic 1; All inputs (21) VIH 2 VCC + 0.3 Input Low Voltage: Logic 0; All inputs (21) VIL -0.3 0.8 V II -5 5 µA Output Leakage Current: I/Os are disabled; 0V ≤ VOUT ≤ VCC IOZ -5 5 µA Output Levels: Output High Voltage (IOUT = -4mA) VOH 2.4 – V Output Low Voltage (IOUT = 4mA) VOL – 0.4 V Input Leakage Current: Any input 0V ≤ VIN ≤ VCC (All other pins not under test = 0V) Max 3.6 V V ICC SPECIFICATIONS AND CONDITIONS (NOTES 1,6,11,13) (VCC = +3.3V ±0.3V; TA = -55°C TO +125°C) Symbol Max Units Operating Current: Active Mode; Burst = 2; Read or Write; tRC = t RC (min); CAS latency = 3 (3, 18, 19) Parameter/Condition I CC1 600 mA Standby Current: Active Mode; CKE = HIGH; CS = HIGH; All banks active after tRCD met; No accesses in progress (3, 12, 19) I CC3 200 mA Operating Current: Burst Mode; Continuous burst; Read or Write; All banks active; CAS latency = 3 (3, 18, 19) I CC4 600 mA Self Refresh Current: CKE ≤ 0.2V (27) I CC7 10 mA 9 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPN8M64VR-XBX ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CHARACTERISTICS (NOTES 5, 6, 8, 9, 11) Parameter Symbol -100 Min Access time from CLK (pos. edge) -66 Max Min Unit Max CL = 3 tAC 6 7.5 ns CL = 2 tAC 6 9 ns Address hold time tAH 1 1 ns Address setup time tAS 2 2 ns CLK high-level width tCH 3 3 ns CLK low-level width tCL 3 3 ns tCK 8 10 ns Clock cycle time (22) CL = 3 tCK 12 15 ns CKE hold time CL = 2 tCKH 1 1 ns CKE setup time tCKS 2 2 ns CS, RAS, CAS, WE, DQM hold time tCMH 1 1 ns CS, RAS, CAS, WE, DQM setup time tCMS 2 2 ns Data-in hold time tDH 1 1 ns Data-in setup time tDS 2 2 Data-out high-impedance time CL = 3 (10) tHZ CL = 2 (10) tHZ 6 7 ns 8 ns 10 ns Data-out low-impedance time tLZ 1 2 ns Data-out hold time (load) tOH 3 3 ns Data-out hold time (no load) (26) tOHN 1.8 1.8 ACTIVE to PRECHARGE command tRAS 50 ACTIVE to ACTIVE command period t RC 70 70 ACTIVE to READ or WRITE delay tRCD 20 30 Refresh period (4,096 rows) – Commercial, Industrial tREF 120,000 60 64 ns ns ns 64 ms 16 ms Refresh period (4,096 rows) – Military tREF AUTO REFRESH period tRFC 70 90 ns PRECHARGE command period tRP 20 30 ns ACTIVE bank A to ACTIVE bank B command tRRD 20 20 tT 0.3 Transition time (7) WRITE recovery time (23) (24) Exit SELF REFRESH to ACTIVE command White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 16 ns 120,000 tWR tXSR 10 1.2 1 ns 1.2 ns 1 CLK + 7ns 1 CLK + 7ns — 15 15 ns 80 90 ns WEDPN8M64VR-XBX AC FUNCTIONAL CHARACTERISTICS (NOTES 5,6,7,8,9,11) Parameter/Condition Symbol -100 -66 Units READ/WRITE command to READ/WRITE command (17) tCCD 1 1 tCK CKE to clock disable or power-down entry mode (14) tCKED 1 1 tCK CKE to clock enable or power-down exit setup mode (14) tPED 1 1 tCK DQM to input data delay (17) tDQD 0 0 tCK DQM to data mask during WRITEs tDQM 0 0 tCK DQM to data high-impedance during READs tDQZ 2 2 tCK WRITE command to input data delay (17) tDWD 0 0 tCK Data-in to ACTIVE command (15) tDAL 4 4 tCK Data-in to PRECHARGE command (16) tDPL 2 2 tCK Last data-in to burst STOP command (17) tBDL 1 1 tCK Last data-in to new READ/WRITE command (17) tCDL 1 1 tCK Last data-in to PRECHARGE command (16) tRDL 2 2 tCK LOAD MODE REGISTER command to ACTIVE or REFRESH command (25) tMRD 2 2 tCK CL = 3 tROH 3 3 tCK CL = 2 tROH 2 2 tCK Data-out to high-impedance from PRECHARGE command (17) 13. ICC specifications are tested after the device is properly initialized. 14. Timing actually specified by tCKS; clock(s) specified as a reference only at minimum cycle rate. 15. Timing actually specified by tWR plus tRP; clock(s) specified as a reference only at minimum cycle rate. 16. Timing actually specified by tWR. 17. Required clocks are specified by JEDEC functionality and are not dependent on any timing parameter. 18. The ICC current will decrease as the CAS latency is reduced. This is due to the fact that the maximum cycle rate is slower as the CAS latency is reduced. 19. Address transitions average one transition every two clocks. 20. CLK must be toggled a minimum of two times during this period. 21. VIH overshoot: VIH (MAX) = VCC + 2V for a pulse width - 3ns, and the pulse width cannot be greater than one third of the cycle rate. VIL undershoot: VIL (MIN) = -2V for a pulse width - 3ns. 22. The clock frequency must remain constant (stable clock is defined as a signal cycling within timing constraints specified for the clock pin) during access or precharge states (READ, WRITE, including tWR, and PRECHARGE commands). CKE may be used to reduce the data rate. 23. Auto precharge mode only. The precharge timing budget (tRP) begins 7.5ns/ 7ns after the first clock delay, after the last WRITE is executed. 24. Precharge mode only. 25. EDEC and PC100 specify three clocks. 26. Parameter guaranteed by design. 27. Self refresh available in commercial and industrial temperatures only. NOTES: 1. All voltages referenced to VSS. 2. This parameter is not tested but guaranteed by design. f = 1 MHz, TA = 25°C. 3. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open. 4. Enables on-chip refresh and address counters. 5. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range is ensured. 6. An initial pause of 100ms is required after power-up, followed by two AUTO REFRESH commands, before proper device operation is ensured. (VCC must be powered up simultaneously.) The two AUTO REFRESH command wake-ups should be repeated any time the tREF refresh requirement is exceeded. 7. AC characteristics assume tT = 1ns. 8. In addition to meeting the transition rate specification, the clock and CKE must transit between VIH and VIL (or between VIL and VIH) in a monotonic manner. 9. Outputs measured at 1.5V with equivalent load: 10. tHZ defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. The last valid data element will meet tOH before going High-Z. 11. AC timing and IDD tests have VIL = 0V and VIH = 3V, with timing referenced to 1.5V crossover point. 12. Other input signals are allowed to transition no more than once every two clocks and are otherwise at valid VIH or VIL levels. 11 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WEDPN8M64VR-XBX PACKAGE 740: 219 PLASTIC BALL GRID ARRAY (PBGA) BOTTOM VIEW 32.1 (1.264) MAX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 T R P N M L K J H G F E D C B A 19.05 (0.750) NOM 1.27 (0.050) NOM 25.1 (0.988) MAX 0.61 (0.024) NOM 219 x ∅ 0.762 (0.030) NOM 2.03 (0.080) MAX 19.05 (0.750) NOM ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION WED P N 8M 64 V R - XXX B X DEVICE GRADE: M = Military -55°C to +125°C I = Industrial -40°C to +85°C C = Commercial 0°C to +70°C PACKAGE: B = 219 Plastic Ball Grid Array (PBGA) FREQUENCY (MHz) 100 = 100MHz 66 = 66MHz IMPROVEMENT MARK R = Registered 3.3V Power Supply CONFIGURATION, 8M x 64 SDRAM PLASTIC WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 12 WEDPN8M64VR-XBX Document Title 8M x 64 Registered Synchronous DRAM Revision History Rev # History Release Date Status Rev 0 Initial Release January 2001 Advanced Rev 1 Changes (Pg. 1, 9) January 2002 Preliminary 1.1 Add Thermal Resistance Table May 2003 Preliminary Changes (Pg. 1) May 2003 Final 1.1 Change Status to Preliminary 1.2 Remove Power Dissipation 1.3 Change Capacitiance Table 1.3.1 C11 to 16pF 1.3.2 CA to 8pF 1.3.3 C12 to 8pF Rev 2 Rev 3 Changes (Pg. 1, 9) 1.1 Rev 4 Changes Status to Final Changes (Pg. 1, 12, 13) 1.1 November 2003 Final Change mechanical drawing to new style 13 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com