WMS512K8BV-XXXE HI-RELIABILITY PRODUCT 512Kx8 MONOLITHIC SRAM FEATURES ■ BiCMOS: ■ Access Times 15, 17, 20ns ■ Revolutionary, Center Power/Ground Pinout JEDEC Approved • 36 lead Ceramic SOJ (Package 100) • 36 lead Ceramic Flat Pack (Package 226) • Radiation Tolerant with Epitaxial Layer Die ■ Commercial and Industrial Temperature Ranges D E D S N N E IS G M O E C D E R W T E O N N R FO ■ TTL Compatible Inputs and Outputs ■ Fully Static Operation: ■ Evolutionary, Corner Power/Ground Pinout JEDEC Approved • 32 pin Ceramic DIP (Package 300) • 32 lead Ceramic SOJ (Package 101) • 32 lead Ceramic Flat Pack (Package 220) • No clock or refresh required. ■ Three State Output ■ Low Voltage Operation: • 3.3V ± 10% Power Supply REVOLUTIONARY PINOUT A0 A1 A2 A3 A4 CS I/O0 I/O1 VCC GND I/O2 I/O3 WE A5 A6 A7 A8 A9 EVOLUTIONARY PINOUT 36 FL AT PACK 36 C S O J 32 D I P 32 CSOJ (DE) 32 FL AT PACK (FE) TOP VIEW TOP VIEW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND NC A18 A17 A16 A15 OE I/O7 I/O6 GND VCC I/O5 I/O4 A14 A13 A12 A11 A10 NC PIN December 1999 Rev. 3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 DESCRIPTION A0-18 Address Inputs I/O0-7 Data Input/Output CS Chip Select OE Output Enable WE Write Enable VCC Power Supply GND Ground 1 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMS512K8BV-XXXE ABSOLUTE MAXIMUM Parameter RATINGS TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power Operating Temperature TA -40 +85 °C Storage Temperature TSTG -65 +150 °C Signal Voltage Relative to GND VG -0.5 4.6 V 150 °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active 4.6 V Junction Temperature TJ Supply Voltage RECOMMENDED Parameter -0.5 VCC OPERATING CAPACITANCE CONDITIONS (TA=+25°C) Symbol Min Max Unit Supply Voltage VCC 3.0 3.6 V Input capacitance Input High Voltage VIH 2.2 VCC + 0.3 V Output capacitance Input Low Voltage V IL -0.3 +0.8 V Operating Temp. TA -40 +85 °C DC Parameter Symbol Condition C IN VIN = 0V, f = 1.0MHz Max Unit 12 pF COUT VOUT = 0V, f = 1.0MHz 12 pF This parameter is guaranteed by design but not tested. CHARACTERISTICS (VCC= 3.3V, GND = 0V, TA = -40°C to +85°C) Parameter Sym Conditions Min Max Units Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 Output Leakage Current I LO CS = VIH, OE = VIH, VOUT = GND to VCC 10 µA Operating Supply Current I CC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 120 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 15 mA Output Low Voltage VOL IOL = 8mA 0.4 V Output High Voltage VOH IOH = -4.0mA 2.4 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 2 µA V WMS512K8BV-XXXE AC CHARACTERISTICS (VCC = 3.3V, GND = 0V, TA = -40°C to +85°C) Parameter Symbol -15 Read Cycle Min Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time tACS -17 Max Min 15 -20 Max 17 Min 20 15 ns 17 0 Units Max 0 20 ns 20 ns 10 ns 0 15 ns 17 Output Enable to Output Valid tOE Chip Select to Output in Low Z tCLZ1 2 2 2 Output Enable to Output in Low Z t OLZ1 0 0 0 Chip Disable to Output in High Z t CHZ1 7 8 10 ns Output Disable to Output in High Z t OHZ1 7 8 10 ns 1. 7 8 ns ns This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 3.3V, GND = 0V, TA= -40°C to +85°C) Parameter Symbol -15 Write Cycle Min -17 Max Min -20 Max Min Units Max Write Cycle Time tWC 15 17 20 ns Chip Select to End of Write tCW 10 12 14 ns Address Valid to End of Write t AW 10 12 14 ns Data Valid to End of Write tDW 8 9 10 ns Write Pulse Width tWP 12 14 14 ns Address Setup Time tAS 0 0 0 ns Address Hold Time tAH 0 0 0 ns Output Active from End of Write t OW1 2 3 3 Write Enable to Output in High Z tWHZ1 Data Hold Time 1. 8 0 t DH ns 8 0 9 ns 0 ns This parameter is guaranteed by design but not tested. AC TEST CIRCUIT AC TEST CONDITIONS Parameter I OL Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source 3 Typ Unit Input Pulse Levels VIL = 0, V IH = 2.5 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V NOTES: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 ý. VZ is typically the midpoint of VOH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMS512K8BV-XXXE TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O PREVIOUS DATA VALID DATA I/O DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED WRITE CYCLE - CS CONTROLLED tWC WS32K32-XHX ADDRESS tAS tAW tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 4 tDH WMS512K8BV-XXXE PACKAGE 100: 36 LEAD, CERAMIC SOJ 23.37 (0.920) ± 0.25 (0.010) 4.7 (0.184) MAX 0.89 (0.035) Radius TYP 0.2 (0.008) ± 0.05 (0.002) 11.23 (0.442) ± 0.30 (0.012) 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) PIN 1 IDENTIFIER 1.27 (0.050) TYP 21.6 (0.850) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 101: 32 LEAD, CERAMIC SOJ ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMS512K8BV-XXXE PACKAGE 220: 32 LEAD, CERAMIC FLAT PACK ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 226: 36 LEAD, CERAMIC FLAT PACK 23.37 (0.920) ± 0.25 (0.010) PIN 1 IDENTIFIER 2.72 (0.107) MAX 12.95 (0.510) ± 0.13 (0.005) 12.7 (0.500) ± 0.5 (0.020) 5.1 (0.200) ± 0.25 (0.010) 3.8 (0.150) TYP 0.43 (0.017) ± 0.05 (0.002) 0.127 (0.005) ± 0.05 (0.002) 32.64 (1.285) TYP 1.27 (0.050) TYP 21.59 (0.850) TYP 38.1 (1.50) ± 0.4 (0.015) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 6 WMS512K8BV-XXXE PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com WMS512K8BV-XXXE ORDERING INFORMATION WMS 512K 8 B V - XXX X X E X LEAD FINISH: Blank = Gold plated leads D E D S N N E IS G M O E C D E R W T E O N N R FO A = Solder dip leads E = Epitaxial Layer DEVICE GRADE: I = Industrial C = Commercial -40°C to +85°C 0°C to +70°C PACKAGE: C = 32 Pin Ceramic .600" DIP (Package 300) DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary DJ = 36 Lead Ceramic SOJ (Package 100) F = 36 Lead Ceramic Flat Pack (Package 226) FE = 32 Lead Ceramic Flat Pack (Package 220) ACCESS TIME (ns) Low Voltage Supply 3.3V ± 10% BiCMOS ORGANIZATION, 512K x 8 SRAM MONOLITHIC WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com 8