1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55FU, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 125 Watts Pk 65 Volts 3.5 Volts 2.5 Amps Pk - 65 to + 150 oC + 200 oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS TEST CONDITIONS Pout Pin Pg ηc VSWR Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance F= 1025-1150 MHz Vcc = 50 Volts PW = 10 µsec DF = 1% F = 1090 MHz BVebo BVces Hfe Cob θjc2 Emitter to Base Breakdown Collector to Emitter Breakdown DC Current Gain to Emitter Output Capacitance Thermal Resistance Ie = 5 mA Ic = 15mA Vce = 5V, Ic = 100 mA Vcb = 50 V, f = 1 MHz Pulsed MIN TYP MAX 35 3.5 10 10.5 45 UNITS Watts Watts dB % 10:1 3.5 65 20 Volts Volts 17 20 1.4 o pF C/W Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue December 6, 1995 GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY. GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120