ETC 2SA1738R

Transistor
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
Unit: mm
6.9±0.1
1.0
0.85
*
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–80
V
Collector to emitter voltage
VCEO
–80
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1
A
Collector current
IC
– 0.5
A
Collector power dissipation
PC*
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1cm2
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
4.5±0.1
0.55±0.1
3
0.45±0.05
2
2.5
1:Base
2:Collector
3:Emitter
1
1.25±0.05
■ Absolute Maximum Ratings
4.1±0.2
7
0.
High collector to emitter voltage VCEO.
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
1.0
R
●
1.0±0.1
●
0.4
■ Features
2.5±0.1
1.5 R0.9
R0.9
2.4±0.2 2.0±0.2 3.5±0.1
1.5
2.5
EIAJ:SC–71
M Type Mold Package
or more, and the board
(Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
µA
ICBO
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–80
V
Collector to emitter voltage
VCEO
IC = –100µA, IB = 0
–80
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–5
hFE1*
VCE = –10V, IC = –150mA
130
50
Forward current transfer ratio
VCB = –20V, IE = 0
– 0.1
Collector cutoff current
V
330
hFE2
VCE = –5V, IC = –500mA
Collector to emitter saturation voltage
VCE(sat)
IC = –300mA, IB = –30mA
– 0.2
– 0.4
Base to emitter saturation voltage
VBE(sat)
IC = –300mA, IB = –30mA
– 0.85
–1.2
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
85
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1 MHz
11
*h
FE1
100
V
V
MHz
20
pF
Rank classification
Rank
R
S
hFE1
130 ~ 220
185 ~ 330
1
2SA1762
Transistor
PC — Ta
IC — VCE
1.0
0.8
–1.2
Ta=25˚C
IB=–10mA
–1.0
–8mA
–7mA
– 0.8
0.6
–6mA
–5mA
– 0.6
0.4
–4mA
–3mA
– 0.4
0.2
– 0.8
– 0.6
–1mA
– 0.2
0
40
60
80 100 120 140 160
0
0
–2
–10
Ta=75˚C
25˚C
–25˚C
– 0.3
–10
–30
–10
–3
25˚C
Ta=–25˚C
–1
75˚C
– 0.1
– 0.03
– 0.03
–3
–10
–30
–100 –300 –1000
– 0.01
–1
Collector current IC (mA)
–3
–10
40
20
0
1
3
10
30
100
300
Emitter current IE (mA)
1000
–10
200
Ta=75˚C
25˚C
150
–25˚C
100
50
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
ICBO — Ta
104
IE=0
f=1MHz
Ta=25˚C
50
–8
250
0
–1
–100 –300 –1000
VCB=–20V
103
ICBO (Ta)
ICBO (Ta=25˚C)
60
Collector output capacitance Cob (pF)
80
60
–6
VCE=–10V
Cob — VCB
VCB=–10V
f=200MHz
Ta=25˚C
100
–30
–4
300
Collector current IC (mA)
fT — IE
120
–2
Base current IB (mA)
IC/IB=10
– 0.3
– 0.1
– 0.01
–1
0
hFE — IC
–100
Base to emitter saturation voltage VBE(sat) (V)
–30
–1
–8
VBE(sat) — IC
IC/IB=10
–3
–6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
–10
–4
Forward current transfer ratio hFE
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
–1.0
– 0.4
–2mA
– 0.2
0
Transition frequency fT (MHz)
–9mA
VCE=–10V
Ta=25˚C
Collector current IC (A)
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
0
2
IC — IB
–1.2
Collector current IC (A)
Collector power dissipation PC (W)
1.2
40
30
20
102
10
10
0
–1
1
–3
–10
–30
–100
Collector to base voltage VCB (V)
0
60
120
180
Ambient temperature Ta (˚C)
2SA1762
Transistor
ICEO — Ta
105
Area of safe operation (ASO)
–10
VCE=–10V
Single pulse
Ta=25˚C
–3
Collector current IC (A)
ICEO (Ta)
ICEO (Ta=25˚C)
104
–1
ICP
IC
t=10ms
– 0.3
103
t=1s
– 0.1
102
– 0.03
– 0.01
10
– 0.003
1
0
20
40
60
80
100 120 140
Ambient temperature Ta (˚C)
– 0.001
– 0.1 – 0.3
–1
–3
–10
–30
–100
Collector to emitter voltage VCE (V)
3
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2001 MAR