ETC 2SB1299P

Power Transistors
2SB1299
Silicon PNP epitaxial planar type
Unit: mm
14.0±0.5
• High forward current transfer ratio hFE
• Satisfactory linearity of forward current transfer ratio hFE
• Full-pack package which can be installed to the heat sink with one
screw
10.0±0.2
4.2±0.2
5.5±0.2
7.5±0.2
4.2±0.2
2.7±0.2
φ 3.1±0.1
1.4±0.1
Solder Dip
(4.0)
■ Features
16.7±0.3
0.7±0.1
For power amplification
Complementary to 2SD1273
Parameter
2.54±0.3
Symbol
Rating
Unit
VCBO
−60
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−6
V
Peak collector current
ICP
−6
A
Collector current
IC
−3
A
IB
−1
A
PC
40
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Base current
Collector power
dissipation
TC = 25°C
Ta = 25°C
0.5+0.2
–0.1
0.8±0.1
■ Absolute Maximum Ratings TC = 25°C
Collector to base voltage
1.3±0.2
5.08±0.5
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F Package
1 2 3
2
■ Electrical Characteristics TC = 25°C
Parameter
Symbol
Collector cutoff current
Max
Unit
ICBO
VCB = −60 V, IE = 0
Conditions
Min
Typ
−100
µA
ICEO
VCE = −40 V, IB = 0
−100
µA
Emitter cutoff current
IEBO
VEB = −6 V, IC = 0
−100
µA
Collector to emitter voltage
VCEO
Forward current transfer ratio *
Collector to emitter saturation voltage
Transition frequency
IC = −25 mA, IB = 0
−60
hFE
VCE = −4 V, IC = − 0.5 A
300
VCE(sat)
IC = −2 A, IB = − 0.05 A
fT
VCE = −12 V, IC = − 0.2 A, f = 10 MHz
V
700
−1
30
V
MHz
Note) *: Rank classification
Rank
Q
P
hFE
300 to 500
400 to 700
1
2SB1299
Power Transistors
PC  T a
IC  VCE
40
(1)
30
20
(4)
(2)
10
–6
TC=25˚C
–10
–5
IB=–100mA
–80mA
–60mA
–8
–40mA
–6
–20mA
–4
–10mA
–5mA
–2
–3
–2
25˚C
TC=125˚C
–25˚C
–2mA
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–10
–12
Transition frequency fT (MHz)
Forward current transfer ratio hFE
TC=100˚C
–25˚C
– 0.1
– 0.03
–1
–3
25˚C
1000
25˚C
–3
– 0.3
TC=100˚C
–25˚C
300
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
–10
Collector current IC (A)
Cob  VCB
–1
–3
100
30
10
3
30
10
3
3
Collector current IC (A)
100
Pulsed tw=1ms
Duty cycle=1%
IC/IB=40
(–IB1=IB2)
VCC=–50V
TC=25˚C
10
3
tf
1
ton
tstg
0.3
–1
–3
–10
Area of safe operation (ASO)
10
30
–2.0
Collector current IC (A)
ton, tstg, tf  IC
Switching time ton,tstg,tf (µs)
300
300
1
– 0.01 – 0.03 – 0.1 – 0.3
–10
100
IE=0
f=1MHz
TC=25˚C
–1.6
VCE=–12V
f=10MHz
TC=25˚C
Collector current IC (A)
1000
–1.2
fT  I C
3000
–10
– 0.8
1000
VCE=–4V
IC/IB=40
–30
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
– 0.4
Base to emitter voltage VBE (V)
hFE  IC
10000
–1
0
Collector to emitter voltage VCE (V)
VCE(sat)  IC
–100
Collector to emitter saturation voltage VCE(sat) (V)
–4
–1
(3)
0
Collector output capacitance Cob (pF)
VCE=–4V
Collector current IC (A)
50
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
0
0.1
ICP
t=1ms
IC
Non
repetitive
pulse
TC=25˚C
10ms
1
DC
0.3
0.1
0.03
0.03
1
–1
0.01
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
IC  VBE
–12
Collector current IC (A)
Collector power dissipation PC (W)
60
0
–2
–4
–6
Collector current IC (A)
–8
0.01
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Power Transistors
2SB1299
Rth(t)  t
Thermal resistance Rth(t) (˚C/W)
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
(1)
(2)
10
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
3
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2001 MAR