Transistors 2SB1320A Silicon PNP epitaxial planer type Unit: mm 6.9±0.1 4.0 0.8 0.15 0.7 1.05 2.5±0.1 (1.45) ±0.05 0.8 1.0 ■ Features 3.5±0.1 For general amplification Complementary to 2SD1991A 0.85 14.5±0.5 0.65 max. • High forward current transfer ratio hFE • Allowing supply with the radial taping +0.1 2.5±0.5 1 Symbol Rating Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −50 V Emitter to base voltage VEBO −7 V Peak collector current ICP −200 mA Collector current IC −100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2 3 2.5±0.1 Parameter 2.5±0.5 +0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.45−0.05 0.45−0.05 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT1 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICBO VCB = −20 V, IE = 0 −1 µA ICEO VCE = −20 V, IB = 0 −1 µA Collector to base voltage VCBO IC = −10 µA, IE = 0 −60 V Collector to emitter voltage VCEO IC = −2 mA, IB = 0 −50 V Emitter to base voltage VEBO IE = −10 µA, IC = 0 −7 VCE = −10 V, IC = −2 mA 160 Collector cutoff current Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency hFE VCE(sat) fT Collector output capacitance Cob V 460 IC = −100 mA, IB = −10 mA −1 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 3.5 pF Note) *: Rank classification Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Product of no-rank is not classified and have no indication for rank. 1 2SB1320A Transistors PC Ta IC VCE −120 Ta = 25°C 200 100 −50 −80 IB = −300 µA −60 −250 µA −200 µA −40 −150 µA −100 µA −20 20 40 60 0 80 100 120 140 160 −2 0 −4 −240 Collector current IC (mA) Base current IB (µA) −250 −200 25°C Ta = 75°C −120 −150 −100 −50 −1.2 Base to emitter voltage VBE 160 Transition frequency fT (MHz) Forward current transfer ratio hFE Ta = 75°C 25°C −25°C 200 100 − 0.4 0 − 0.8 −1.2 −1.6 −10 −30 −100 −300 −1 000 Collector current IC (mA) 2 −1 Ta = 75°C 25°C −25°C −2.0 − 0.001 −1 (V) 100 80 60 40 1 −30 −100 −300 −1 000 Cob VCB 120 0.3 −10 8 VCB = −10 V Ta = 25°C 0 0.1 −3 Collector current IC (mA) 20 −3 −3 fT I E 500 0 −1 IC / IB = 10 − 0.003 Base to emitter voltage VBE 140 300 −10 − 0.01 (V) VCE = −5 V −400 − 0.03 hFE IC 600 −300 − 0.1 −80 0 −1.6 −200 Base current IB (µA) Collector output capacitance Cob (pF) − 0.8 −100 − 0.3 −25°C −40 − 0.4 0 VCE(sat) IC VCE = −5 V −160 0 0 −12 −200 −300 400 −10 −20 IC VBE VCE = −5 V Ta = 25°C −350 −8 −30 Collector to emitter voltage VCE (V) IB VBE −400 −6 −40 −10 −50 µA Collector to emitter saturation voltage VCE(sat) (V) 0 Ambient temperature Ta (°C) 0 VCE = −5 V Ta = 25°C Collector current IC (mA) 300 0 IC I B −60 −100 400 Collector current IC (mA) Collector power dissipation PC (mW) 500 3 10 30 Emitter current IE (mA) 100 IE = 0 f = 1 MHz Ta = 25°C 7 6 5 4 3 2 1 0 −1 −2 −3 −5 −10 −20−30 −50 −100 Collector to base voltage VCB (V) Transistors 2SB1320A NF IE IE = 1 mA f = 10.7 MHz Ta = 25°C VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 4 3 2 4 3 2 14 12 f = 100 Hz 10 1 kHz 8 10 kHz 6 4 2 0 −5 −10 −15 −20 −25 0 − 0.01 − 0.03 − 0.1 − 0.3 −30 Emitter current IE (mA) h Parameter IE h Parameter VCB 300 200 hfe hfe 50 50 h Parameter 100 hoe (µS) 20 10 5 −3 Collector to emitter voltage VCE (V) 100 30 −1 10 2 hre (×10−4) 1 − 0.1 − 0.2− 0.3− 0.5 −1 −2 −3 −5 Emitter current IE (mA) −10 –10 VCB = −10 V 50 30 hoe (µS) 2 100 IE = −2 mA f = 270 Hz Ta = 25°C 20 3 −2 −3 −5 ICBO Ta 5 hie (kΩ) −1 Emitter current IE (mA) 30 3 0 − 0.1 − 0.2− 0.3 − 0.5 −10 ICBO (Ta) ICBO (Ta = 25°C) 0 300 VCB = −5 V f = 270 Hz 200 Ta = 25°C h Parameter 16 1 1 VCB = −5 V Rg = 50 kΩ Ta = 25°C 18 Noise figure NF (dB) 5 NF IE 20 6 Noise figure NF (dB) Common emitter reverse transfer capacitance Cre (pF) Cre VCE 6 5 2 hie (kΩ) −2 −3 −5 10 3 hre (×10−4) 1 −1 20 −10 −20−30 −50 −100 Collector to vase voltage VCB (V) 1 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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