Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm 45° * 0.5±0.08 1.5±0.1 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Collector current IC –2 A Collector power dissipation PC 1* W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 0.4±0.04 3.0±0.15 Parameter 1cm2 1.0–0.2 ■ Absolute Maximum Ratings +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1I or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –1mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V VCE = –2V, IC = –200mA 120 VCE = –2V, IC = –1A 60 hFE1 Forward current transfer ratio * hFE2 340 Collector to emitter saturation voltage VCE(sat) IC = –1A, IB = –50mA – 0.2 – 0.3 V Base to emitter saturation voltage VBE(sat) IC = –1A, IB = –50mA – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 80 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 45 *h FE1 MHz 60 pF Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 1 Transistor 2SB1440 PC — Ta IC — VCE 1.2 1.0 0.8 0.6 0.4 Ta=25˚C 600µA –80 500µA –60 20 40 60 200µA 80 100 120 140 160 100µA 0 Ambient temperature Ta (˚C) –4 –6 –8 –10 –12 25˚C Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 80 60 40 20 –10 –30 300 25˚C Ta=75˚C 100 –25˚C 30 10 –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –100 Collector to base voltage VCB (V) –1 –3 –10 Collector current IC (A) VCB=–10V f=200MHz Ta=25˚C 200 160 120 80 40 3 1 – 0.01 – 0.03 – 0.1 – 0.3 0 –1 –3 Collector current IC (A) Cob — VCB –3 Ta=75˚C 25˚C – 0.1 Transition frequency fT (MHz) –3 100 –1 240 1000 –10 120 –3 – 0.3 VCE=–2V 3000 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –10 fT — I E 10000 Forward current transfer ratio hFE IC/IB=20 –1 –30 hFE — IC –100 0 –1 –2 IC/IB=20 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 300µA –40 0 0 Collector output capacitance Cob (pF) 400µA –20 0.2 0 2 IB=700µA –100 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. VCE(sat) — IC –100 –120 Collector current IC (mA) Collector power dissipation PC (W) 1.4 –10 1 3 10 30 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. 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