Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 1.05 2.5±0.1 ±0.05 4.0 0.8 ● 1.0 1.0 14.5±0.5 0.65 max. +0.1 0.45–0.05 2.5±0.5 * (Ta=25˚C) 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics 0.45+–0.1 0.05 (HW type) (Ta=25˚C) Parameter Symbol Collector cutoff current 2.5±0.5 2 2.5±0.1 ■ Absolute Maximum Ratings +0.1 ● High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. 0.45–0.05 ● 0.2 ■ Features ● (1.45) 0.5 4.5±0.1 0.15 6.9±0.1 0.7 max Unit ICBO VCB = –400V, IE = 0 Conditions min typ –1 µA ICEO VCE = –100V, IB = 0 –1 µA Emitter cutoff current IEBO VBE = –5V, IC = 0 –1 µA Collector to emitter voltage VCEO IC = –1mA, IB = 0 hFE1*1 VCE = –5V, IC = –50mA 80 hFE2 VCE = –5V, IC = –300mA*2 10 VCE(sat) IC = –100mA, IB = –10mA*2 – 0.25 – 0.5 Base to emitter saturation voltage VBE(sat) IC = –100mA, IB = –10mA*2 – 0.8 –1.2 Transition frequency fT VCB = –10V, IE = 0.1A, f = 1MHz*2 25 Turn-on time ton IC = –100mA, RL = 1.5kΩ 0.4 1.0 µs Storage time tstg IB1 = –10mA, IB2 = 10mA 5.5 6.5 µs Collector current fall time tf VCC = –150V 0.5 1.0 µs Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 40 pF Forward current transfer ratio Collector to emitter saturation voltage –400 V 280 FE1 Rank classification Rank P Q hFE1 80 ~ 160 130 ~ 280 V MHz *2 *1h V Pulse measurement 1 2SB1488 Transistor PC — Ta IC — VCE 1.0 Ta=25˚C – 0.9 – 0.8 – 0.7 0.8 – 0.6 0.6 IB=100mA – 0.5 – 0.4 0.4 50mA – 0.2 10mA 5mA – 0.1 1mA 0.5mA 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 25˚C Ta=–25˚C 100˚C – 0.1 – 0.03 1000 –1 –3 25˚C 300 Ta=100˚C 100 –25˚C 30 10 3 –1 Collector current IC (A) Cob — VCB 100 80 70 60 50 40 30 20 Pulsed tw=1ms Duty cycle=1% IC/IB=5(–IB1=IB2) VCC=–100V Ta=25˚C 30 Switching time ton,tstg,tf (µs) IE=0 f=1MHz Ta=25˚C 10 tstg 3 1 tf 0.3 ton 0.1 0.03 10 0.01 –3 –10 –30 –100 Collector to base voltage VCB (V) –10 VCE=–10V Ta=25˚C 300 100 30 10 3 1 0 – 0.2 – 0.4 – 0.6 – 0.8 Collector current IC (A) 0.1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (A) ton, tstg, tf — IC 100 –3 0.3 1 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 –10 –1 Collector current IC (A) fT — IC VCE=–5V Collector current IC (A) 90 –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 Transition frequency fT (MHz) –3 – 0.3 Collector output capacitance Cob (pF) –12 1000 –10 0 –1 –10 3000 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –25˚C – 0.03 –8 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=5 25˚C –3 hFE — IC –100 Ta=100˚C –10 Collector to emitter voltage VCE (V) VBE(sat) — IC –1 –6 –30 – 0.1 0.1mA 0 0 IC/IB=5 – 0.3 – 0.3 0.2 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 VCE(sat) — IC –100 –1.0 Collector current IC (mA) Collector power dissipation PC (W) 1.2 – 1.0 –1 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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