Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9±0.1 1.5 (Ta=25˚C) 1.0 0.55±0.1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 0.85 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 7 0. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Symbol Conditions Collector to base voltage VCBO IC = 100µA, IE = 0 Emitter to base voltage VEBO Forward current transfer ratio hFE Base to emitter voltage VBE VCB = 10V, IE = –2mA Transition frequency fT* VCB = 10V, IE = –15mA, f = 200MHz min typ max Unit 30 V IE = 10µA, IC = 0 3 V VCB = 10V, IE = –2mA 25 720 600 1200 mV 1600 MHz Power gain PG VCB = 10V, IE = –1mA, f = 100MHz 20 dB Common base reverse transfer capacitance Crb VCB = 6V, IE = 0, f = 1MHz 0.8 pF Common emitter reverse transfer capacitance Cre VCE = 10V, IC = 1mA, f = 10.7MHz 1.5 pF Base time constant rbb' · CC VCB = 10V, IE = –10mA, f = 31.9MHz 25 ps *f T Rank classification Rank T S fT 600 ~ 1300 900 ~ 1600 1 2SC2636 Transistor PC — Ta IC — VCE IC — I B 24 24 Ta=25˚C VCE=10V Ta=25˚C IB=300µA 300 200 100 20 250µA 16 200µA 12 150µA 8 100µA 4 0 Collector current IC (mA) 20 400 Collector current IC (mA) 0 0 20 40 60 80 100 120 140 160 6 12 18 VCE=10V 25˚C 350 Collector current IC (mA) Base current IB (µA) 50 300 250 200 150 100 Ta=75˚C –25˚C 40 30 20 10 50 0 0 1.2 1.8 0 Base to emitter voltage VBE (V) 0.4 0.8 1.2 Ta=25˚C VCE=10V 1200 6V 1000 Ta=75˚C 25˚C –25˚C 40 800 600 400 200 0.3 1 3 10 10 3 1 0.3 Ta=75˚C 25˚C 0.1 –25˚C 0.03 0.01 0.1 0.3 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 1 3 10 30 100 Collector current IC (mA) Common emitter reverse transfer capacitance Cre (pF) Transition frequency fT (MHz) Forward current transfer ratio hFE 2.0 1400 0 0.1 2 1.6 IC/IB=10 Cre — VCE VCE=10V 160 450 30 fT — I E 1600 200 300 100 Base to emitter voltage VBE (V) hFE — IC 240 80 150 Base current IB (µA) VCE(sat) — IC 60 VCE=10V Ta=25˚C 120 0 IC — VBE 400 0.6 8 Collector to emitter voltage VCE (V) IB — VBE 0 12 0 0 Ambient temperature Ta (˚C) 16 4 50µA Collector to emitter saturation voltage VCE(sat) (V) Collector power dissipation PC (mW) 500 10 30 Emitter current IE (mA) 100 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC2636 Zrb — IE PG — IE 12 f=100MHz Rg=50Ω Ta=25˚C 35 100 30 80 60 40 VCE=10V 25 6V 20 15 10 VCE=6V 20 –1 –3 0 – 0.1 – 0.3 –10 –1 –3 –10 –30 0 – 0.1 – 0.3 –100 300 – 0.4 f=900MHz –5mA 600 500 300 200 –40 –50 –60 10 500 – 0.8 IE=–2mA 20 30 40 50 Input conductance gib (mS) 600 –1.2 f=900MHz –2mA –1.6 IE=–5mA –2.0 –2.4 –1.0 –10 –30 –100 48 200 yrb=grb+jbrb VCB=10V – 0.8 – 0.6 – 0.4 – 0.2 0 Reverse transfer conductance grb (mS) Forward transfer susceptance bfb (mS) Reverse transfer susceptance brb (mS) –10 –3 bfb — gfb 0 yib=gib+jbib VCB=10V –1 Emitter current IE (mA) brb — grb 0 0 4 Emitter current IE (mA) bib — gib –30 6 2 Emitter current IE (mA) –20 8 5 10V – 0.3 VCE=10V f=100MHz Rg=50kΩ Ta=25˚C 10 Noise figure NF (dB) f=2MHz Ta=25˚C 0 – 0.1 Input susceptance bib (mS) NF — IE 40 Power gain PG (dB) Reverse transfer impedance Zrb (Ω) 120 yfb=gfb+jbfb VCB=10V 40 f=200MHz IE=–5mA 32 300 –2mA 500 24 600 16 900 8 0 –60 –40 –20 0 20 40 Forward transfer conductance gfb (mS) bob — gob 12 Output susceptance bob (mS) yob=gob+jbob VCE=10V 900 10 600 8 IE=–2mA –5mA 500 6 4 300 2 f=200MHz 0 0 0.4 0.8 1.2 1.6 2.0 Output conductance gob (mS) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR