Transistor 2SC5026 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 Unit: mm 2.5±0.1 +0.25 0.4max. 0.4±0.08 4.0–0.20 45° +0.1 ● Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 ■ Features 0.5±0.08 1.5±0.1 0.4±0.04 3.0±0.15 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 2A or more, and the board (Ta=25˚C) Symbol Parameter Conditions min typ max Unit 0.1 µA Collector cutoff current ICBO VCB = 40V, IE = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 80 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 80 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 100mA 500mA*2 120 340 hFE2 VCE = 2V, IC = Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 60 0.15 0.3 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 120 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 10 MHz 20 *2 *1h FE pF Pulse measurement Rank classification Rank R S hFE1 120 ~ 240 170 ~ 340 1 2SC5026 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 1.0 IB=8mA 0.8 0.2 0.6 3mA 2mA 0.4 1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 3 Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB 50 40 30 20 10 0 3 10 30 100 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 300 1000 Collector to base voltage VCB (V) 0.1 0.3 200 250 Ta=75˚C 25˚C 150 –25˚C 100 50 0 0.01 0.03 0.1 0.3 3 10 VCB=10V Ta=25˚C VCE=2V 200 1 Collector current IC (A) fT — I E 1 3 Collector current IC (A) 60 1 10 300 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.01 0.01 0.03 8 IC/IB=10 hFE — IC IC/IB=10 25˚C 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 4 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) 7mA 6mA 5mA 4mA 0.2 0 2 Collector to emitter saturation voltage VCE(sat) (V) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (W) 1.4 10 160 120 80 40 0 –1 –3 –10 –30 –100 –300 –1000 Emitter current IE (mA) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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