Transistor 2SD0973, 2SD0973A (2SD973, 2SD973A) Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 Symbol Collector to 2SD0973 base voltage 2SD0973A Collector to 2SD0973 * Ratings 30 VCBO Emitter to base voltage VEBO Peak collector current 25 ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Conditions voltage 2SD0973A Collector to emitter 2SD0973 voltage 2SD0973A Emitter to base voltage VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 hFE1 Forward current transfer ratio 1.0 4.5±0.1 4.1±0.2 EIAJ:SC–71 M Type Mold Package min typ VCB = 20V, IE = 0 ICBO 2SD0973 1:Base 2:Collector 3:Emitter 2.5 or more, and the board Symbol Collector to base 1 (Ta=25˚C) Parameter Collector cutoff current 2 2.5 V Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion 0.45±0.05 V 50 1cm2 0.55±0.1 3 5 ■ Electrical Characteristics 0. Unit V 60 VCEO emitter voltage 2SD0973A 0.85 (Ta=25˚C) 1.25±0.05 Parameter 7 0.4 ■ Absolute Maximum Ratings 1.0 1.5 R0.9 R0.9 R ● Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0±0.1 ● 2.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 ■ Features 1.5 *1 VCE = 10V, IC = 500mA*2 max Unit 0.1 µA 30 V 60 25 V 50 5 V 85 160 50 100 340 hFE2 VCE = 5V, IC = 1A*2 Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA*2 0.2 0.4 V Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = 50mA*2 0.85 1.2 V Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 Collector output capacitance Cob VCB = 10V, IE = 0. f = 1MHz 11 MHz 20 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SD0973, 2SD0973A Transistor PC — Ta IC — VCE Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.0 0.8 0.6 0.4 1.2 Ta=25˚C 1.25 IB=10mA 9mA 8mA 1.00 7mA 6mA 0.75 5mA 4mA 3mA 0.50 2mA 0.25 0.2 0 60 80 100 120 140 160 2 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 10 3 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 Collector output capacitance Cob (pF) 120 80 40 1 3 Emitter current IE (mA) –100 8 10 12 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 0.01 0.03 10 0.1 0.3 1 3 10 Collector current IC (A) VCER — RBE 120 IE=0 f=1MHz Ta=25˚C 40 30 20 10 0 –30 6 VCE=10 Cob — VCB 160 4 600 50 –10 2 Base current IB (mA) Collector current IC (A) VCB=10V Ta=25˚C –3 0 hFE — IC 30 fT — I E 0 –1 8 IC/IB=10 Collector current IC (A) 200 6 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) 3 0.1 4 VBE(sat) — IC IC/IB=10 0.3 0.4 Collector to emitter voltage VCE (V) VCE(sat) — IC 10 0.6 0 0 Forward current transfer ratio hFE 40 0.8 0.2 1mA 1 3 10 30 100 Collector to base voltage VCB (V) Collector to emitter voltage VCER (V) 20 Ambient temperature Ta (˚C) Transition frequency fT (MHz) 1.0 0 0 2 VCE=10V Ta=25˚C Collector current IC (A) 1.2 IC — IB 1.50 Collector current IC (A) Collector power dissipation PC (W) 1.4 IC=10mA Ta=25˚C 100 80 60 2SD0973A 40 2SD0973 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) 2SD0973, 2SD0973A Transistor ICEO — Ta 104 Area of safe operation (ASO) 10 VCE=10V Single pulse Ta=25˚C 3 10 t=10ms IC 0.3 t=1s 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.001 0.1 0.3 1 3 10 2SD0973A ICEO (Ta) ICEO (Ta=25˚C) 102 1 2SD0973 Collector current IC (A) ICP 103 30 100 Collector to emitter voltage VCE (V) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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