ETC 2SD968AR

Transistor
2SD0968, 2SD0968A (2SD968, 2SD968A)
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A)
Unit: mm
■ Absolute Maximum Ratings
Parameter
2SD0968
base voltage
2SD0968A
Collector to
2SD0968
*
Ratings
100
120
100
VCEO
120
2.5±0.1
+0.25
0.4max.
4.0–0.20
0.4±0.04
3.0±0.15
(Ta=25˚C)
VCBO
emitter voltage 2SD0968A
0.4±0.08
0.5±0.08
1.5±0.1
Symbol
Collector to
45°
+0.1
●
High collector to emitter voltage VCEO.
Large collector power dissipation PC.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing.
1.0–0.2
●
2.6±0.1
●
1.5±0.1
4.5±0.1
1.6±0.2
■ Features
3
Unit
V
2
1
marking
V
Emitter to base voltage
VEBO
5
V
Peak collector current
Collector current
ICP
1
A
IC
0.5
Collector power dissipation
PC*
A
1
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : W(2SD0968)
V(2SD0968A)
Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
■ Electrical Characteristics
(Ta=25˚C)
Parameter
Symbol
Collector to emitter
2SD0968
voltage
2SD0968A
Conditions
min
typ
max
100
VCEO
IC = 100µA, IB = 0
VEBO
IE = 10µA, IC = 0
5
hFE1*1
VCE = 10V, IC = 150mA*2
90
hFE2
VCE = 5V, IC = 500mA*2
50
VCE(sat)
IC = 500mA, IB = 50mA*2
0.2
0.6
Base to emitter saturation voltage
VBE(sat)
IC = 500mA, IB =
50mA*2
0.85
1.2
Transition frequency
fT
VCB = 10V, IE = –50mA, f = 200MHz
120
Collector output capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
11
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
*1h
FE1
Marking
Symbol
V
120
V
220
100
Rank
Q
R
hFE1
90 ~ 155
130 ~ 220
2SD0968
WQ
WR
2SD0968A
VQ
VR
V
V
MHz
20
*2
Rank classification
Unit
pF
Pulse measurement
Note.) The Part numbers in the Parenthesis show conventional
part number.
1
2SD0968, 2SD0968A
Transistor
1.0
0.8
0.6
0.4
8mA
6mA
4mA
0.6
0.4
2mA
40
60
80 100 120 140 160
2
4
6
8
10
12
3
1
Ta=75˚C
25˚C
–25˚C
0.03
0.01
0.003
30
10
3
25˚C
1
Ta=–25˚C
75˚C
0.3
30
100
300
0.1
0.03
1000
3
10
fT — I E
100
300
1000
80
40
50
Collector output capacitance Cob (pF)
120
IE=0
f=1MHz
Ta=25˚C
40
30
20
10
0
–3
–10
–30
Emitter current IE (mA)
–100
12
15
VCE=10V
250
Ta=75˚C
200
25˚C
–25˚C
150
100
50
1
3
10
30
1
3
10
30
100
300
Collector current IC (mA)
Cob — VCB
160
0
–1
30
Collector current IC (mA)
VCB=10V
Ta=25˚C
9
0
1
Collector current IC (mA)
200
6
300
IC/IB=10
0.01
10
3
Base current IB (mA)
hFE — IC
100
0.001
3
0
Collector to emitter voltage VCE (V)
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10
1
0.4
VBE(sat) — IC
10
0.1
0.6
0
0
VCE(sat) — IC
0.3
0.8
0.2
Forward current transfer ratio hFE
20
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
1.0
12mA
10mA
0.8
VCE=10V
Ta=25˚C
0
0
Transition frequency fT (MHz)
Ta=25˚C
0.2
0.2
0
2
IC — IB
1.2
Collector current IC (A)
1.0
IB=20mA
Printed circut board: Copper
foil area of 1cm2 or more, and
the board thickness of 1.7mm
for the collector portion.
1.2
Collector current IC (A)
Collector power dissipation PC (W)
IC — VCE
1.2
18mA
16mA
14mA
PC — Ta
1.4
100
Collector to base voltage VCB (V)
1000
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2001 MAR