Power Transistors 2SD1272 Silicon NPN triple diffusion planar type Unit: mm ■ Absolute Maximum Ratings TC = 25°C Parameter Symbol Rating 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 φ 3.1±0.1 200 V VCEO 150 V 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F Package 1 2 3 Emitter to base voltage VEBO 6 V Peak collector current ICP 2.5 A Collector current IC 1 A Base current IB 0.1 A PC 40 W Ta = 25°C 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 VCBO 1.3±0.2 1.4±0.1 5.08±0.5 Collector to emitter voltage TC = 25°C 4.2±0.2 Unit Collector to base voltage Collector power dissipation 16.7±0.3 14.0±0.5 • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 Solder Dip (4.0) ■ Features 0.7±0.1 For high-speed switching and high current amplification ratio 2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ■ Electrical Characteristics TC = 25°C Parameter Symbol Collector cutoff current Conditions Min ICBO VCB = 200 V, IE = 0 Emitter cutoff current IEBO VEB = 6 V, IC = 0 Collector to emitter voltage VCEO IC = 25 mA, IB = 0 150 hFE VCE = 4 V, IC = 0.2 A 500 VCE(sat) IC = 0.5 A, IB = 0.02 A Forward current transfer ratio * Collector to emitter saturation voltage Transition frequency fT VCE = 4 V, IC = 0.1 A, f = 10 MHz Typ Max Unit 100 µA 100 µA V 2 000 1 25 V MHz Note) *: Rank classification Rank hFE Q P 500 to 1 200 800 to 2 000 1 2SD1272 Power Transistors PC T a IC VCE VCE(sat) IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 40 30 20 (2) 10 Collector to emitter saturation voltage VCE(sat) (V) 0.5 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) 50 IB=400µA 0.4 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA (3) (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 –25˚C 0.3 0.1 0.03 0.3 1 3000 300 100 30 10 ICP t=1ms DC 0.1 0.03 0.01 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 2 3 VCE=4V f=10MHz TC=25˚C 30 10 3 0.1 0.3 1 3 1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) t Thermal resistance Rth(t) (˚C/W) Collector current IC (A) 10 0.3 1 100 Collector current IC (A) Non repetitive pulse TC=25˚C 10ms 0.3 300 3 102 IC 0.1 1000 Area of safe operation (ASO) 1 0.03 3000 –25˚C 1 0.01 0.03 3 100 3 0.01 0.01 fT I C TC=100˚C 25˚C Collector current IC (A) 30 0.03 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 25˚C 0.1 0.1 10000 1000 1 0.03 –25˚C VCE=4V TC=100˚C 0.01 0.01 25˚C 0.3 hFE IC IC/IB=25 3 1 Collector current IC (A) 10000 10 TC=100˚C 3 Collector to emitter voltage VCE (V) VBE(sat) IC IC/IB=25 10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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