Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type 1.5±0.1 10.0±0.3 1.0±0.1 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification with high forward current transfer ratio 0.8±0.1 0.5max. 2.54±0.3 80 VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A dissipation Ta=25°C Storage temperature Tstg ■ Electrical Characteristics 0.8±0.1 2SD1259 current 2SD1259A 40 150 ˚C –55 to +150 ˚C ICES Conditions max Unit 100 100 µA 100 µA VCB = 6V, IC = 0 VCEO IC = 25mA, IB = 0 Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz FE typ VCE = 100V, IE = 0 IEBO *h min 100 Emitter cutoff current 2SD1259A 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 VCE = 80V, IE = 0 VCE = 40V, IB = 0 voltage 2 (TC=25˚C) ICEO 2SD1259 0 to 0.4 W 1.3 Collector cutoff current Collector to emitter R0.5 R0.5 5.08±0.5 Symbol Parameter Collector cutoff 1.0±0.1 2.54±0.3 1 Tj 6.0±0.3 1.1 max. PC Junction temperature 3.4±0.3 V Emitter to base voltage Collector power TC=25°C Unit: mm 8.5±0.2 14.7±0.5 emitter voltage 2SD1259A 60 VCEO V +0.4 2SD1259 100 3.0–0.2 Collector to 80 VCBO 4.4±0.5 2SD1259A Unit +0 2SD1259 base voltage 1:Base 2:Collector 3:Emitter N Type Package 3 1.5–0.4 Collector to Ratings 2 10.0±0.3 Symbol 1 2.0 Parameter 5.08±0.5 (TC=25˚C) 4.4±0.5 ■ Absolute Maximum Ratings 60 µA V 80 500 2500 1 50 V MHz Rank classification Rank hFE Q P O 500 to 1000 800 to 1500 1200 to 2500 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 1 Power Transistors 2SD1259, 2SD1259A PC — Ta IC — VCE IC — VBE 1.0 (1) 40 30 20 5 IB=1.2mA TC=25˚C 1.0mA 10 0.8 Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 25˚C 4 –25˚C TC=100˚C 3 2 1 (2) 0.1mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 8 10 3000 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 100 30 10 3 0.1 0.3 1 3 t=1ms 10ms 300ms 0.3 0.01 1 3 10 30 2SD1259A 2SD1259 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 I CP IC 30 Collector current IC (A) Non repetitive pulse TC=25˚C 1 100 1 0.01 0.03 10 103 3 300 3 Area of safe operation (ASO) 30 1.2 1000 –25˚C 25˚C 1 0.01 0.03 10 1.0 VCE=12V f=10MHz TC=25˚C 3000 TC=100˚C Transition frequency fT (MHz) 25˚C 1 0.8 fT — IC 1000 TC=100˚C 0.6 VCE=4V Forward current transfer ratio hFE 10 0.4 10000 IC/IB=40 30 3 0.2 Base to emitter voltage VBE (V) hFE — IC 100 Collector current IC (A) 0 10000 100 Collector current IC (A) 2 12 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 6 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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