Power Transistors 2SD1741, 2SD1741A Silicon NPN triple diffusion planar type Unit: mm For power amplification For TV vertical deflection output Complementary to 2SB1171 and 2SB1171A 7.0±0.3 Collector to 2SD1741 Ratings 200 VCBO 200 150 VCEO emitter voltage 2SD1741A 180 V +0.3 2.5 6 V Peak collector current ICP 3 A dissipation 0.75±0.1 IC 2 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter A 15 1 ˚C –55 to +150 ˚C 0.9±0.1 0 to 0.15 2 3 2.3±0.2 4.6±0.4 150 0.5 max. 1.1±0.1 W 1.3 Unit: mm 0 to 0.15 3.0±0.2 VEBO Collector current 3.5±0.2 2.0±0.2 V Emitter to base voltage Collector power TC=25°C 7.0±0.3 Unit 1.0 2SD1741A 1:Base 2:Collector 3:Emitter I Type Package 3 2.5±0.2 base voltage 2 1.0 2SD1741 4.6±0.4 1 (TC=25˚C) Symbol Collector to 2.3±0.2 1.0 max. Parameter 0.4±0.1 2.5±0.2 ■ Absolute Maximum Ratings 1.0±0.2 10.0 –0. High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 0.85±0.1 0.75±0.1 7.2±0.3 ● 1.1±0.1 10.2±0.3 ● 0.8±0.2 7.2±0.3 ■ Features ● 3.5±0.2 3.0±0.2 1:Base 2:Collector 3:Emitter I Type Package (Y) (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 50 µA Emitter cutoff current IEBO VEB = 4V, IC = 0 50 µA VCBO IC = 50µA, IE = 0 Collector to base voltage Collector to emitter 2SD1741 voltage 2SD1741A Emitter to base voltage IC = 5mA, IB = 0 VEBO IE = 500µA, IC = 0 6 * V 150 VCEO hFE1 Forward current transfer ratio 200 V 180 VCE = 10V, IC = 150mA 60 hFE2 VCE = 10V, IC = 400mA 50 V 240 Base to emitter voltage VBE VCE = 10V, IC = 400mA 1 V Collector to emitter saturation voltage VCE(sat) IC = 500mA, IB = 50mA 1 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz *h FE1 20 MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 1 Power Transistors 2SD1741, 2SD1741A PC — Ta IC — VCE 1.2 TC=25˚C 1.0 15 (1) 10 5 5mA 4mA 0.6 3mA 0.4 2mA 0.2 TC=100˚C –25˚C 0.8 0.6 0.4 0.2 1mA 0 40 60 80 100 120 140 160 0 0 4 8 12 16 20 24 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC IC/IB=10 3 0.3 25˚C –25˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) IC t=1ms 1 5ms 0.3 300ms 2SD1741 2SD1741A 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) ICP 3 100 0.1 0.01 0.03 10 103 100 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–4 1.2 VCE=10V f=1MHz TC=25˚C 300 Collector current IC (A) 10 1.0 0.3 1 0.01 0.03 1 Non repetitive pulse TC=25˚C 0.8 VCE=10V 3000 Collector current IC (A) 30 0.6 1000 1000 TC=100˚C 0.4 fT — IC 10000 Forward current transfer ratio hFE 10 1 0.2 Base to emitter voltage VBE (V) Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector current IC (A) 1.0 6mA 0.8 25˚C (2) 0 2 VCE=10V IB=7mA Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=1.3W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.2 Collector current IC (A) Collector power dissipation PC (W) 20 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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