ETC 2SK2446-01S

2SK2446-L,S
N-channel MOS-FET
100V 0,055Ω 30A
F-III Series
> Features
-
80W
> Outline Drawing
High Current
Low On-Resistance
No Secondary Breakdown
Low Driving Power
High Forward Transconductance
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (RGS=20KΩ)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
Symbol
V DS
V DGR
ID
I D(puls)
V GS
PD
T ch
T stg
Rating
100
100
30
120
±20
80
150
-55 ~ +150
Unit
V
V
A
A
V
W
°C
°C
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Symbol
V (BR)DSS
V GS(th)
I DSS
Gate Source Leakage Current
Drain Source On-State Resistance
I
R
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time ton (ton=td(on)+tr)
g
C
C
C
t
t
t
t
V
t
Q
Turn-Off-Time toff (ton=td(off)+tf)
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
GSS
DS(on)
fs
iss
oss
rss
d(on)
r
d(off)
f
SD
rr
rr
Test conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=100V
Tch=25°C
VGS=0V
Tch=125°C
VGS=±20V
VDS=0V
ID=15A
VGS=4V
ID=15A
VGS=10V
ID=15A
VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V
ID=30A
VGS=10V
RGS=25Ω
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-dIF/dt=100A/µs Tch=25°C
Min.
100
1,0
Test conditions
channel to air
channel to case
Min.
15
Typ.
1,5
10
0,2
10
0,04
0,03
30
2500
500
250
20
140
500
260
0,9
130
1,0
Max.
2,5
500
1,0
100
0,07
0,055
3700
750
380
30
210
750
390
1,5
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
µC
Thermal Characteristics
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Typ.
Max.
125
1,56
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
Unit
°C/W
°C/W
2SK2446-L,S
N-channel MOS-FET
100V
0,055Ω 30A
F-III Series
80W
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance vs. Tch
ID=f(VDS); 80µs pulse test; TC=25°C
Typical Transfer Characteristics
RDS(on) = f(Tch); ID=15A; VGS=10V
ID [A]
1
VDS [V]
↑
RDS(ON) [Ω]
↑
ID [A]
↑
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
2
→
Tch [°C]
3
→
VGS [V]
→
Typical Drain-Source On-State-Resistance vs. ID
Typical Transconductance
Gate Threshold Voltage
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
→
ID [A]
Typical Capacitances
Tch [°C]
Typical Gate Charge Characteristic
IF=f(VSD); 80µs pulse test; VGS=0V
VDS [V]
↑
C [nF]
↑
7
VDS [V]
8
→
Qg [nC]
Power Dissipation
↑
↑
→
VSD [V]
PD [W]
Tch [°C]
→
→
↑
Zth(ch-c) [K/W]
ID=f(VDS): D=0,01, Tc=25°C
↑
Transient Thermal impedance
Zthch-c=f(t) parameter:D=t/T
12
ID [A]
10
9
Safe Operation Area
PD=f(Tc)
↑
→
Forward Characteristics of Reverse Diode
VGS=f(Qg); ID=30A
IF [A]
C=f(VDS); VGS=0V; f=1MHz
6
→
VGS [V]
ID [A]
VGS(th) [V]
↑
gfs [S]
↑
RDS(ON) [Ω]
↑
VDS [V]
→
This specification is subject to change without notice!
t [s]
→