ETC 74VCX16373T

74VCX16373

LOW VOLTAGE 16-BIT D-TYPE LATCH (3-STATE)
WITH 3.6V TOLERANT INPUTS AND OUTPUTS
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3.6V TOLERANT INPUTS AND OUTPUTS
HIGH SPEED:
tPD = 3.0 ns (MAX.) at VCC = 3.0 to 3.6V
tPD = 3.4 ns (MAX.) at VCC = 2.3 to 2.7V
tPD = 6.8 ns (MAX.) at VCC = 1.8V
POWER-DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 24 mA (MIN) at VCC = 3.0V
|IOH| = IOL = 18 mA (MIN) at VCC = 2.3V
|IOH| = IOL = 6 mA (MIN) at VCC = 1.8V
OPERATING VOLTAGE RANGE:
VCC (OPR) = 1.8V to 3.6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 16373
LATCH-UP PERFORMANCE EXCEEDS 300mA
ESD PERFORMANCE:
HBM >2000V; MM > 200V
T
(TSSOP48 Package)
ORDER CODES :
74VCX16373T
PIN CONNECTION
DESCRIPTION
The VCX16373 is a low voltage CMOS 16-BIT
D-TYPE LATCH with 3 STATE OUTPUTS NON
INVERTING fabricated with sub-micron silicon
gate and five-layer metal wiring C2MOS
technology. It is ideal for low power and very high
speed 1.8 to 3.6V applications; it can be
interfaced to 3.6V signal enviroment for both
inputs and outputs.
These 16 bit D-Type latchs are byte controlled by
two latch enable inputs (nLE) and two output
enable inputs (OE).
While the nLE input is held at a high level, the nQ
outputs will follow the data input precisely.
When the nLE is taken low, the nQ outputs will be
latched precisely at the logic level of D input data.
While the (nOE) input is low, the nQ outputs will
be in a normal logic state (high or low logic level)
and while high level the outputs will be in a high
impedance state.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
December 1999
1/11
74VCX16373
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
IEC LOGIC SYMBOLS
PIN No
SYMBOL
NAME AND FUNCT ION
1
1OE
2, 3, 5, 6,
8, 9, 11, 12
1Q0 to 1Q7
3 State Outputs
13, 14, 16, 17,
19, 20, 22, 23
2Q0 to 2Q7
3 State Outputs
24
2OE
3 State Output Enable
Input (Active LOW)
Latch Enable Input
3 State Output Enable
Input (Active LOW)
25
2LE
36, 35, 33, 32,
30, 29, 27, 26
2D0 to 2D7
Data Inputs
47, 46, 44, 43,
41, 40, 38, 37
1D0 to 1D7
Data Inputs
48
1LE
Latch Enable Input
4, 10, 15, 21,
28, 34, 39, 45
GND
Ground (0V)
7, 18, 31, 42
VCC
Positive Supply Voltage
TRUTH TABLE
INPUT S
OUTPUTS
OE
LE
D
Q
H
X
X
Z
L
L
X
NO CHANGE *
L
H
L
L
L
H
H
H
X:Don’t care
Z: High impedance
* Q output are latched at the timewhen the LE input is taken low level.
2/11
74VCX16373
LOGIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
Supply Voltage
-0.5 to + 4.6
V
VI
DC Input Voltage
-0.5 to + 4.6
V
VO
DC Output Voltage (OFF state)
VO
DC Output Voltage (High or Low State) (note1)
VCC
-0.5 to + 4.6
V
-0.5 to VCC + 0.5
V
IIK
DC Input Diode Current
- 50
mA
IOK
DC Output Diode Current (note2)
± 50
mA
IO
DC Output Source/Sink Current
± 50
mA
DC VCC or Ground Current Per Supply Pin
± 100
mA
400
mW
ICC orIGND
PD
Power Dissipation
Tstg
Storage Temperature
TL
Lead Temperature (10 sec)
-65 to +150
o
300
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied.
1) IO absolute maximum rating must be observed
2) VO < GND, VO > VCC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Value
Unit
Supply Voltage
Parameter
1.8 to 3.6
V
-0.3 to 3.6
V
VI
Input Voltage
VO
Output Voltage (OFF state)
0 to 3.6
V
VO
Output Voltage (High or Low State)
0 to VCC
V
IOH, IOL
High or Low Level Output Current (VCC = 3.0 to 3.6V)
± 24
mA
IOH, IOL
High or Low Level Output Current (VCC = 2.3 to 2.7V)
± 18
mA
IOH, IOL
High or Low Level Output Current (VCC = 1.8V)
±6
mA
Top
dt/dv
Operating Temperature:
Input Transition Rise or Fall Rate (V CC = 3.0V) (note 1)
-40 to+85
0 to 10
o
C
ns/V
1) VIN from0.8V to 2.0V, VCC = 3.0V
3/11
74VCX16373
DC SPECIFICATIONS (2.7V < VCC ≤ 3.6V unless otherwise specified)
Symb ol
Parameter
Test Co nditi ons
VIH
High Level Input Voltage
VIL
Low Level Input Voltage
VOH
High Level Output Voltage
Min.
Max.
V
0.8
IO=-100 µA
VCC-0.2
IO=-12 mA
2.2
IO=-18 mA
2.4
3.0
IO=-24 mA
2.2
2.7 to 3.6
IO=100 µA
0.2
IO=12 mA
0.4
IO=18 mA
0.4
IO=24 mA
0.55
2.7 to 3.6
VI = VIH
or VIL
3.0
Low Level Output Voltage
Un it
2.0
2.7 to 3.6
2.7
VOL
Value
-40 to 85 o C
V CC
(V)
VI = VIH
or VIL
2.7
3.0
3.0
V
V
V
Input Leakage Current
2.7 to 3.6
VI = 0 to 3.6 V
±5
µA
IOZ
3 State Output Leakage Current
2.7 to 3.6
VI = VIH orVIL
VO = 0 to 3.6V
±10
µA
Ioff
Power Off Leakage Current
0
VI orVO = 0 to 3.6V
10
µA
ICC
Quiescent Supply Current
µA
II
∆ICC
ICC incr. per input
2.7 to 3.6
2.7 to 3.6
VI = VCC orGND
20
VI orVO = VCC to 3.6 V
±20
VIH = VCC -0.6V
750
µA
DC SPECIFICATIONS (2.3V < VCC ≤ 2.7V unless otherwise specified)
Symb ol
Parameter
Test Co nditi ons
VIH
High Level Input Voltage
VIL
Low Level Input Voltage
VOH
High Level Output Voltage
Un it
Max.
1.6
V
0.7
IO=-100 µA
2.3 to 2.7
VI = VIH
or VIL
2.0
IO=-12 mA
1.8
2.3
IO=-18 mA
1.7
2.3 to 2.7
IO=100 µA
0.2
IO=12 mA
0.4
IO=18 mA
0.6
2.3
2.3
VI = VIH
or VIL
V
VCC-0.2
IO=-6 mA
2.3
Low Level Output Voltage
Min.
2.3 to 2.7
2.3
VOL
Value
-40 to 85 o C
V CC
(V)
V
V
Input Leakage Current
2.3 to 2.7
VI = 0 to 3.6 V
±5
µA
IOZ
3 State Output Leakage Current
2.3 to 2.7
VI = VIH orVIL
VO = 0 to 3.6V
±10
µA
Ioff
Power Off Leakage Current
0
VI orVO = 0 to 3.6V
10
µA
ICC
Quiescent Supply Current
2.3 to 2.7
VI = VCC orGND
20
VI orVO = VCC to 3.6 V
±20
µA
II
4/11
74VCX16373
DC SPECIFICATIONS (1.8V ≤ VCC ≤ 2.3V unless otherwise specified)
Symb ol
Parameter
Test Co nditi ons
Value
VIH
High Level Input Voltage
VIL
Low Level Input Voltage
VOH
High Level Output Voltage
VOL
Low Level Output Voltage
Min.
1.8
1.8
1.8
Max.
0.7VCC
1.8 to 2.3
1.8
Un it
-40 to 85 o C
V CC
(V)
V
0.2VCC
VI = VIH
or VIL
IO=-100 µA
VCC-0.2
IO=-6 mA
1.4
VI = VIH
or VIL
IO=100 µA
0.2
IO=6 mA
0.3
V
V
V
Input Leakage Current
1.8
VI = 0 to 3.6 V
±5
µA
IOZ
3 State Output Leakage Current
1.8
VI = VIH orVIL
VO = 0 to 3.6V
±10
µA
Ioff
Power Off Leakage Current
0
VI orVO = 0 to 3.6V
10
µA
ICC
Quiescent Supply Current
VI = VCC orGND
20
VI orVO = VCC to 3.6 V
±20
µA
II
1.8
DYNAMIC SWITCHING CHARACTERISTICS (Ta = 25oC, Input tr = tf = 2.0ns, CL = 30pF, RL = 500Ω)
Symb ol
Parameter
Test Con dition s
T A = 25 C
VOLV
Min .
1.8
3.3
0.8
Dynamic Low Voltage Quiet Output
(note 1, 3)
1.8
-0.25
2.5
VIL = 0 V
VIH = VCC
VIL = 0 V
VIH = VCC
3.3
VOHV
T yp.
Dynamic Low Voltage Quiet Output
(note 1, 3)
2.5
Dynamic High Voltage Quiet Output
(note 2, 3)
1.8
2.5
3.3
Un it
o
V CC
(V)
VOLP
Value
Max.
0.25
0.6
-0.6
V
V
-0.8
VIL = 0 V
VIH = VCC
1.5
1.9
V
2.2
1) Number ofoutputs defined as ”n”. Measured with”n-1” outputs switching from HIGH to LOW or LOW t o HIGH. The remaining output is measured in
the LOW state.
2) Number ofoutputs defined as ”n”. Measured with”n-1” outputs switching from HIGH to LOW or LOW t o HIGH. The remaining output is measured in
the HIGH state.
3) Parameters guaranteed by design.
5/11
74VCX16373
AC ELECTRICAL CHARACTERISTICS (CL = 30 pF, RL = 500 Ω, Input tr = tf = 2.0 ns)
Symb ol
Parameter
V CC
(V)
tPLH
tPHL
Propagation Delay Time Dn to Qn
tPLH
tPHL
Propagation Delay Time LE to Qn
tPZL
tPZH
Output Enable Time
tPLZ
tPHZ
Output Disable Time
ts
th
tw
tOSLH
tOSHL
Setup Time, HIGH or LOW level Dn to
LE
Hold Time, HIGH or LOW level Dn to LE
LE Pulse Width, HIGH
Output to Output Skew Time (note 1, 2)
Test Con dition
Waveform
1.8
2.3 to 2.7
Value
-40 to 85 o C
Min. Max.
1.5
6.8
1.0
3.4
3
3.0 to 3.6
1.8
2.3 to 2.7
3.0 to 3.6
1.8
2.3 to 2.7
3.0 to 3.6
1
2
1.8
2.3 to 2.7
2
3.0 to 3.6
1.8
2.3 to 2.7
3.0 to 3.6
1.8
2.3 to 2.7
3.0 to 3.6
1
1
1.8
2.3 to 2.7
3.0 to 3.6
1.8
2.3 to 2.7
3.0 to 3.6
0.8
1.5
1.0
0.8
1.5
1.0
0.8
3.0
7.8
3.9
3.0
9.2
4.6
3.5
1.5
1.0
6.8
3.8
0.8
2.5
1.5
1.5
1.0
1.0
1.0
3.5
ns
ns
ns
ns
ns
ns
4.0
1.5
1.5
1
Un it
ns
0.75
0.5
0.5
ns
1) Skew is defined as the absolute value of the difference between the actual propagation delay for any twooutputs of the same device switching in the
same direction, either HIGH or LOW (tOSLH = |tPLHm - tPLHn|, tOSHL = |tPHLm - tpHLn|)
CAPACITIVE CHARACTERISTICS
Symb ol
Parameter
Test Co nditi ons
Valu e
Min.
T yp.
Input Capacitance
1.8, 2.5 or
3.3
VIN = 0V or VCC
6
COUT
Output Capacitance
1.8, 2.5 or
3.3
VIN = 0V or VCC
7
CPD
Power Dissipation Capacitance (note 1)
1.8, 2.5 or
3.3
fIN = 10MHz
VIN = 0V or VCC
20
CIN
Un it
T A = 25 oC
V CC
(V)
Max.
pF
pF
pF
1) CPD isdefined as the value of the IC’sinternal equivalent capacitance which is calculated fromthe operating current consumption without load. Average
operting current can be obtained by the following equation. I CC(opr) = CPD • VCC • fIN + ICC/16 (per circuit)
6/11
74VCX16373
TEST CIRCUIT
T EST
SW IT CH
tPLH , tPHL
Open
tPZL , tPLZ (VCC = 3.0 to 3.6V)
6V
tPZL , tPLZ (VCC = 2.3 to 2.7V or 1.8V)
2VCC
tPZH , tPHZ
GND
CL = 30 pF or equivalent (includes jigand probe capacitance)
RL = R1 = 500Ω orequivalent
RT = ZOUT of pulse generator (typically 50Ω)
WAVEFORM SYMBOL VALUES
Symbol
VIH
V CC
3.0 to 3.6V
2.3 to 2.7V
1.8V
2.7V
VCC
VCC
VM
1.5V
VCC/2
VCC/2
VX
VOL + 0.3V
VOL + 0.15V
VOL + 0.15V
VY
VOH - 0.3V
VOH - 0.15V
VOH - 0.15V
7/11
74VCX16373
WAVEFORM 1: LE TO Qn PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH,
Dn TO LE SETUP AND HOLD TIMES (f=1MHz; 50% duty cycle)
8/11
74VCX16373
WAVEFORM 2: OUTPUT ENABLE AND DISABLE TIMES (f=1MHz; 50% duty cycle)
WAVEFORM 3: PROPAGATION DELAY TIME (f=1MHz; 50% duty cycle)
9/11
74VCX16373
TSSOP48 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
A
MIN.
1.1
MAX.
0.433
A1
0.05
0.10
0.15
0.002
0.004
0.006
A2
0.85
0.9
0.95
0.335
0.354
0.374
b
0.17
0.27
0.0067
0.011
c
0.09
0.20
0.0035
0.0079
D
12.4
12.5
12.6
0.408
0.492
0.496
E
7.95
8.1
8.25
0.313
0.319
0.325
E1
6.0
6.1
6.2
0.236
0.240
0.244
e
0.5 BSC
0.0197 BSC
K
0o
4o
8o
0o
4o
8o
L
0.50
0.60
0.70
0.020
0.024
0.028
A
A2
A1
b
K
e
E1
PIN 1 IDENTIFICATION
1
L
E
c
D
10/11
TYP.
74VCX16373
Information furnished is believed to be accurate and reliable. However, STMicroelectronic s assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems withoutexpress written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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11/11