1N581x ® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) 1A VRRM 40 V Tj 150°C VF (max) 0.45 V FEATURES AND BENEFITS n n n n n VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DO41 DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol Value Parameter VRRM Repetitive peak reverse voltage IF(RMS) RMS forward current 1N5817 1N5818 1N5819 20 30 40 Unit V 10 A IF(AV) Average forward current TL = 125°C δ = 0.5 1 A IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 25 A PARM Repetitive peak avalanche power tp = 1µs Tstg Storage temperature range Tj dV/dt * : Maximum operating junction temperature * Critical rate of rise of reverse voltage Tj = 25°C 1200 1200 900 W - 65 to + 150 °C 150 °C 10000 V/µs dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) July 2003 - Ed: 4A 1/5 1N581x THERMAL RESISTANCES Symbol Parameter Value Unit Rth (j-a) Junction to ambient Lead length = 10 mm 100 °C/W Rth (j-l) Junction to lead Lead length = 10 mm 45 °C/W 1N5817 1N5818 1N5819 0.5 0.5 0.5 Unit mA STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter VF * Tests Conditions VR = VRRM Reverse leakage current Tj = 25°C Tj = 100°C Forward voltage drop Tj = 25°C Tj = 25°C 10 10 10 mA IF = 1 A 0.45 0.50 0.55 V IF = 3 A 0.75 0.80 0.85 V Pulse test : * tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 Fig. 1: Average forward power dissipation versus average forward current (1N5817/1N5818). Fig. 2: Average forward power dissipation versus average forward current (1N5819). PF(av)(W) PF(av)(W) 0.6 0.7 δ = 0.2 δ = 0.1 0.5 δ = 0.5 δ = 0.1 0.6 δ = 0.05 δ = 0.2 δ = 0.5 δ = 0.05 0.5 0.4 δ=1 δ=1 0.4 0.3 0.3 0.2 0.2 T 0.1 T 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 tp δ=tp/T IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2-1: Average forward current versus ambient temperature (δ=0.5) (1N5817/1N5818). Fig. 2-2: Average forward current versus ambient temperature (δ=0.5) (1N5819). δ=tp/T IF(av) (A) tp IF(av)(A) 1.2 1.2 IF(av)(A) Rth(j-a)=Rth(j-l)=45°C/W Rth(j-a)=Rth(j-l)=45°C/W 1.0 1.0 0.8 0.8 Rth(j-a)=100°C/W Rth(j-a)=100°C/W 0.6 0.6 0.4 0.4 T T 0.2 0.2 δ=tp/T 0.0 2/5 0 25 δ=tp/T Tamb(°C) tp 50 75 100 125 150 0.0 0 Tamb(°C) tp 25 50 75 100 125 150 1N581x Fig. 3: Normalized avalanche power derating versus pulse duration. Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(1µs) 1 1.2 PARM(tp) PARM(25°C) 1 0.1 0.8 0.6 0.01 0.4 0.2 Tj(°C) tp(µs) 0.001 0 0.01 0.1 1 10 100 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5817/1N5818). 10 8 50 75 100 125 150 IM(A) 7 8 6 7 6 5 Ta=25°C 5 Ta=25°C Ta=75°C 4 Ta=75°C 4 3 3 Ta=100°C Ta=100°C 2 IM 1 IM t 1 t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout). 1.0 25 Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819). IM(A) 9 2 0 1000 t t(s) δ=0.5 0 1E-3 1E-2 1E-1 1E+0 Fig. 7: Junction capacitance versus reverse voltage applied (typical values). C(pF) Zth(j-a)/Rth(j-a) 500 F=1MHz Tj=25°C 0.8 200 1N5817 0.6 100 δ = 0.5 1N5818 50 0.4 δ = 0.2 0.2 T δ = 0.1 0.0 1E-1 1N5819 20 Single pulse 1E+0 tp(s) 1E+1 δ=tp/T 1E+2 tp 1E+3 VR(V) 10 1 2 5 10 20 40 3/5 1N581x Fig. 8-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818). IR(mA) 1E+1 Fig. 8-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5819). IR(mA) 1E+1 1N5818 Tj=125°C Tj=125°C 1N5817 1E+0 1E+0 Tj=100°C Tj=100°C 1E-1 1E-1 1E-2 1E-2 Tj=25°C Tj=25°C VR(V) 1E-3 0 5 10 VR(V) 15 20 25 30 Fig. 9-1: Forward voltage drop versus forward current (typical values) (1N5817/1N5818). 10.00 IFM(A) 1E-3 0 5 40 Tj=100°C Tj=25°C 0.10 VFM(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Fig. 10: Non repetitive surge peak forward current versus number of cycles. IFSM(A) F=50Hz Tj initial=25°C 25 20 15 10 5 Number of cycles 4/5 35 Tj=125°C 0.10 1 30 IFM(A) Tj=100°C 0 20 1.00 Tj=125°C 30 15 Fig. 9-2: Forward voltage drop versus forward current (typical values) (1N5819). 10.00 1.00 0.01 0.0 10 10 100 1000 Tj=25°C VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1N581x PACKAGE MECHANICAL DATA DO41 plastic DIMENSIONS C A C REF. O /D O /D n O / B Millimeters Inches Min. Max. Min. Max. A 4.1 5.2 0.16 0.205 B 2 2.7 0.08 0.107 C 25.4 D 0.71 1 0.86 0.028 0.034 Ordering type Marking Package Weight Base qty Delivery mode 1N581x Part number cathode ring DO41 0.34g 2000 Ammopack 1N581xRL Part number cathode ring DO41 0.34g 5000 Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5