ETC ACT5101-1-A

ACT5101-1 HIGH VOLTAGE 3-PHASE
BRUSHLESS DC MOTOR DRIVE
Features
• 500VDC RATING
CIRCUIT TECHNOLOGY
www.aeroflex.com
• 40 AMP CONTINUOUS CURRENT (UP TO 85°C)
General Description
• PACKAGE SIZE 3.0" X 2.1" X 0.39"
• 4 QUADRANT CONTROL
• 6 STEP TRAPEZOIDAL DRIVE CAPABILITY
• MILITARY PROCESSING AVAILABLE
• ISOLATED UPPER AND LOWER GATE DRIVERS
• TEMPERATURE RANGE -55°C TO +125°C
+15V
+15V
+15V
DC / AC
Converter
Phase V+
SD
+15V
Optical
Isolation
XFMR
&
Rect
Ux
Phase OUT
XFMR
&
Rect
+15V
Lx
Phase RTN
To Other Sections
FIGURE 1 – BLOCK DIAGRAM
The ACT5101-1 high voltage 3
phase brushless DC motor drive
combines a 500VDC, 40A high
power output stage along with
low power digital input and gate
drive stages. A digital lock-out
feature protects the output stage
from accidental cross-conduction
thus preventing shoot-through
conditions. The ACT5101-1 also
includes a floating gate drive
design for each upper and lower
transistor. On-board gate drive
supplies provide a continuous
floating voltage for each upper
and lower transistor, even during a
motor stall.
The high power output stage
rated at 500VDC, 40A is capable
of delivering over 20 KW to the
load even after derating. This is
accomplished through the use of
high power IGBTS with ultra-fast
recovery rectifiers in parallel.
The ACT5101-1 utilizes power
hybrid technology to provide the
highest levels of reliability and
lightest weight while requiring the
smallest amount of board space.
The ACT5101-1 is available with
military processing and operates
over the -55 to +125 degrees C
temperature range.
This makes the ACT5101-1 ideal for
all military, space,and commercial
avionics' applications. These include electro-hydrostatic actuators
[EHA's] and electro-mechanical
actuators [EMA's] for flight surface
control, missile fin actuators, thrust
vector control, electric brakes, fuel
and cooling pumps. Additional
eroflex Circuit Technology – Motor Driver Modules For The Future © SCD5101-1 REV F 8/29/02
applications include environmental conditioning blowers, radar positioning, solar panel positioning, and
cryogenic cooler pumps. The ACT5101-1 is therefore especially suitable for use in applications for all military
tank upgrades, helicopters, planes and new commercial avionics using 270 VDC as the main power.
Ux INPUTS
50%
50%
LX INPUTS
td on
td off
td off
td on
90%
PHASE
OUTPUTS 50%
10%
tr
tf
tr
tf
50%
SD
tSDU
H
PHASE
OUTPUTS
Z
tSDL
UPPER TRANSISTOR
BEING SHUTDOWN
LOWER TRANSISTOR
BEING SHUTDOWN
Z
L
FIGURE 2 – TIMING DIAGRAM
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Table I – Absolute Maximums
(TC = +25°C unless otherwise specified 1/ )
PARAMETER
SYMBOL
RANGE
UNITS
V+A,V+B,V+C
500
V DC
+15V
18
V DC
CONTINUOUS
lo
40
A
PULSED
lop
60
A
CASE OPERATING TEMPERATURE
TC
-55 to +125
°C
CASE STORAGE TEMPERATURE RANGE
TCS
-55 to 150
°C
JUNCTION TEMPERATURE
TJ
150
°C
SUPPLY VOLTAGE (PINS 3,7,11)
+15 V SUPPLY (PIN 12)
OUTPUT CURRENT
Notes:
1/ Reference page 11 – Mechanical Applications for Case Interface Temperature.
Table II – Normal Operating Conditions
TC = +25°C unless otherwise specified
PARAMETERS
SYMBOL
6/
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
-
-
40
A
15
270
500
V DC
POWER OUTPUT STAGE
Output Current Continuous
Supply Voltage
lo
5/
V+A,V+B,V+C Tested to 300V
6/
Output Voltage Drop (each IGBT)
Instantaneous Forward Voltage
(flyback diode)
4/
lo = 40A
-
-
3.4
V DC
VF
lop = 40A
See Note 1
-
-
2.4
V DC
-
-
35
nsec
V+ = 300V
-
-
1.0
mA
V+ = 300V
-
-
3.0
mA
V+ = 480V
-
-
8.0
mA
1/ 5/
Reverse Recovery Time (flyback diode)
Reverse Leakage Current
VCE(SAT)
trr
5/
2/
Tc=25°C
lr
Tc=105°C
TJ=125°C
5/
LOGIC INPUT SIGNALS (INTERNALLY PULLED UP) (V+ = 15V)
Input Voltage Low
VINL
-
-
4
V DC
Input Voltage High
VINH
6.8
-
-
V DC
Input Current Low
IINH
-
-
3.75
mA
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
Table II – Normal Operating Conditions (Continued)
TC = +25°C unless otherwise specified
PARAMETERS
SYMBOL
SWITCHING CHARACTERISTICS
6/
TEST
CONDITIONS
MIN
TYP
MAX
UNIT
4/
Upper Drive:
Turn-on propagation delay
td (on)
-
-
700
nsec
Turn-off propagation delay
td (off)
-
-
2
µsec
tSDU
-
-
3.5
µsec
Turn-on Transition Time
tr
-
-
100
nsec
Turn-off Transition Time
tf
-
-
250
nsec
Turn-on propagation delay
td (on)
-
-
600
nsec
Turn-off propagation delay
td (off)
-
-
2
µsec
tSDL
-
-
3.5
µsec
Turn-on Transition Time
tr
-
-
250
nsec
Turn-off Transition Time
tf
-
-
200
nsec
-
4
-
mJ
Shut-down propagation delay
Lower Drive:
4/
Shut-down propagation delay
SWITCHING ENERGY LOSSES (At I = 40A, V = 480V)
5/
TC = +125°C
Turn-on Energy
Eon
Turn-off Energy
Eoff
-
6
-
mJ
tdt
500
-
-
nsec
DEAD TIME
THERMAL
θjcIGBT
each transistor
-
-
.45
°C/W
θjcDIODE
each diode
-
-
.85
°C/W
TS
-
-
250
°C
Junction Temperature Range
TJ
-55
-
150
°C
Case Operating Temperature
TC
-55
-
125
°C
Case Storage Temperature
Tcs
-55
-
150
°C
Junction-Case Thermal Resistance (IGBT)
Junction-Case Thermal Resistance (DIODE)
Maximum Lead Soldering Temp
3/
Notes:
1/ Pulse width ≤ 300 usec duty cycle ≤2%. Guaranted, not tested.
2/ V+ = 480 V, Inputs = logic "1".
3/ Solder 1/8" from case for 5 seconds maximum.
4/ Tested @ 6.5Amps.
5/ Guaranted, not tested.
6/ Not to exceed TJ of +150°C. Reference page 11 – Mechanical Applications for Case Interface Temperature.
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
FUNCTION
PIN #
DESCRIPTION
V+ A
11
High Voltage D.C. Bus, Phase A
V+ B
7
High Voltage D.C. Bus, Phase B
V+ C
3
High Voltage D.C. Bus, Phase C
+15V
12
+15 VDC input required to power gate drive supply and gate drive circuitry of all
three phases.
GND
19,22,26
RTN A
8
Return for High Voltage Bus, Phase A.
RTN B
5
Return for High Voltage Bus, Phase B
RTN C
1
Return for High Voltage Bus, Phase C
PHASE A
9
Output to motor winding Phase A
PHASE B
6
Output to motor winding Phase B
PHASE C
2
Output to motor winding Phase C
UA
18
Digital input to Phase A upper transistor
LA
17
Digital input to Phase A lower transistor
UB
21
Digital input to Phase B upper transistor
LB
20
Digital input to Phase B lower transistor
UC
25
Digital input to Phase C upper transistor
LC
24
Digital input to Phase C lower transistor
SD
23
Digital shut-down input to enable / disable all six gate drives
N/C
4,10,13-16
Reference for LOGIC supply, +15V supply, and digital inputs.
No connection Internally
DIGITAL INPUT STAGE
The ACT5101-1 offers complete flexibility by allowing the user to turn on/off each of the 6 IGBTS in any order
or combination desired which enables the hybrid to be commutated in a 6 step trapezoidal mode. The only
unacceptable combination would be to turn on an upper and lower transistor of the same phase. This is not
a desirable condition for normal operation and is therefore not allowed. The ACT5101-1 has a digital lockout
feature that prevents turn-on of two in-line transistors. Damage to one or both of the transistors would occur
if this protection circuitry was not present in the hybrid. As a safety precaution, it is still recommended that a
500 nsec dead time be installed between commands at the inputs of the upper and lower transistors of the
same phase. This will compensate for any lag in transistor turn-off due to the inductive load.
The SD input allows the user to enable/disable the drive stage of the ACT5101-1 on demand. This input can
be incorporated into the user's temperature or current monitoring circuitry to shutdown the hybrid if
excessive current or case temperatures are sensed.
The digital input circuits are of the Schmitt trigger type with hystersesis of at least 1.6 volts, thus greatly
enhancing the input noise immunity. The inputs are internally pulled up to 15 volts so that an uncommitted
input is sensed as "OFF", providing a measure of protection against an accidental input disconnect.
GATE DRIVE
The ACT5101-1 includes a gate drive supply which provides a floating voltage for each upper and lower
transistor. This constant voltage allows the motor to be operated at very low duty cycles or driven into a stall
without any loss of upper or lower gate drive. This performance could not be obtained with only a
conventional boot strap design.
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
POWER OUTPUT STAGE
IGBTS [insulated gate bipolar transistors] are technically similar to bipolars and MOSFETS. An IGBT is a
composite of a transistor with an N-channel MOSFET connected to the base of a PNP transistor. Like the
MOSFET, it offers high input impedance and requires low input drive current. IGBT conduction losses are low,
as with bipolar technology, and IGBT voltage drops are much lower compared with those of MOSFETs.
Consequently, the IGBT offers a high current density. With a smaller die size than the MOSFET, it can handle
the same current rating. Unlike MOSFETS, IGBTS have no intrinsic body diode. The ACT5101-1 includes 35 nsec
fast recovery rectifiers in parallel across each of the 6 IGBTS to carry the reverse current when the IGBT is
turned off.
It is important for the user to observe the Absolute Maximum ratings of the ACT5101-1 so that the voltage
and current rating is not exceeded. If over-voltage/over-current protection is desired it must be
implemented external to the ACT5101-1. Figure 3 shows the ACT5101-1 output current capability vs. case
temperature.
Output Current IO (A)
45
40
35
30
25
20
15
10
0
20
40
60
80
100 120 140
Case Temperature TC (°C)
FIGURE 3 - OUTPUT CURRENT VS. CASE TEMPERATURE
POWER DISSIPATION
Power dissipation in the ACT5101-1 is composed of three elements: IGBT conduction losses, IGBT switching
losses, and commutation diode conduction losses. It is important that the user calculates power dissipations
over the full range of operating conditions of the hybrid, and uses these dissipations to compute the worst
case junction temperatures both for the IGBTs and diodes. The 150°C maximum junction temperature shown
in Table 2 must not be exceeded. Additionally, program specific derating and reliability constraints may
require lower junction temperatures than the 150°C maximum.
Calculating IGBT conduction losses requires the user to determine load profiles for the hybrid both in
current and time duration. IGBT collector-emitter voltage drops are shown in Figure 4.
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
2.8
2.6
TJ = 150°C
2.4
VCE
(V)
2.2
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
1.0
10
20
30
40
50
60
70
80
IC (A)
FIGURE 4 - IGBT COLLECTOR-TO-EMITTER VOLTAGE VS. COLLECTOR CURRENT
Based upon this voltage drop and the conduction duty cycle a conduction power loss may be calculated
as:
P c = δS ⋅ δ PWM ⋅ V CE ⋅ I C
where:
pc =
Conduction IGBT Power Dissipation
δs =
Switch Duty Cycle, (.33 for brushless drives in run condition, 1 in stall)
δPWM =
PWM on/off ratio
VCE =
Collector Emitter voltage from Figure 4 for a particular collector current
IC =
Collector current
Switching losses are dependent upon the operating frequency, collector current and again duty cycle as:
IC
P s = δ S ⋅ [ E on + Eoff ] ⋅ fo ⋅ ----40
where:
Ps =
Switching IGBT Power Dissipation
Eon =
Turn on energy loss from Table 2
Eoff =
Turn off energy loss from Table 2
fo =
Pulse width modulation frequency
IC =
Collector current
Commutation diode losses are calculated as:
Pd = δ s ⋅ [ 1 – δPWM ] ⋅ Vf ⋅ I f
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
where:
Pd =
Commutation diode losses
Vf =
Commutation diode forward voltage from Figure 5
If =
Commutation diode current
TJ = 25°C
1.8
1.6
1.4
Vf
(V)
TJ = 150°C
1.2
1.0
0.8
0.6
0
10
20
30
40
50
60
70
80
If (A)
FIGURE 5 - DIODE VOLTAGE DROP VS. FORWARD CURRENT
Once the dissipations are calculated the junction temperatures may then be computed by summing the
conduction losses and switching losses for the IGBT and the commutation diode loss and multiplying these
dissipations by the respective junction to case thermal resistance as shown below:
TjIGBT = [ P c + P s ] ⋅ θ jcIGBT + T C
T jDIODE = P d ⋅ θ jcDIODE + TC
where:
TjIGBT =
IGBT Junction Temperature
TjDIODE =
Commutation Diode Junction Temperature
θjcIGBT =
IGBT Thermal resistance from Table 2
θjcDIODE =
Diode Thermal resistance from Table 2
Tcase =
Case temperature
It is important that the user calculate junction temperatures over the full range of operating conditions,
including maximum load and stall conditions. Typically, hybrid losses peak at just maximum load with duty
cycles approaching, but just under, unity. Single transistor and diode losses peak under stall conditions since
power is dissipated in just one channel.
EXAMPLE
As a typical application consider a 10 HP brushless DC motor operating off a 270V line in a pump
application. The drive is trapezoidal, and the nominal load current will be 30 A. The system current limit is set
to roll back the PWM to maintain a maximum load current of 25 amperes in the event of a stall. Maximum
case temperature will be 85°C. Duty cycles may approach unity, but at stall it will be approximately 0.1.
PWM frequency is 20 kHz.
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
At a run condition each transistor will be on for 120 degrees; then
P c = δS ⋅ δ PWM ⋅ VCE ⋅ I C
δ S = 0.33
δ PWM = 1
V CE = 1.6 V
I C = 30 A
P c = 0.33 ⋅ 1.6 ⋅ 30
P c = 15.8 W
IC
Ps = δS ⋅ [ Eon + E off ] ⋅ f o ⋅ ----40
E on = 0.004 J
Eoff = 0.006 J
f o = 20000 Hz
30
Ps = 0.33 ⋅ [ 0.004 + 0.006 ] ⋅ 20000 ⋅ -----40
Ps = 49.5 W
T jIGBT = [ Pc + P s ] ⋅ θ jcIGBT + T C
θ jcIGBT = 0.45°C/W
T C = 85° C
T jIGBT = [ 15.8 + 49.5 ] ⋅ 0.45° + 85°
T jIGBT = 114.4° C
Maximum hybrid dissipation is:
PHYBRID = 6 [ Ps + P c ]
PHYBRID = 6 [ 49.5 + 15.8 ]
PHYBRID = 391.8 W
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At stall only two elements will be on, and they will be on full time.
P c = δ S ⋅ δ PWM ⋅ VCE ⋅ IC
δS = 1
δPWM = 0.1
VCE = 1.6 V
IC = 25 A
P c = 1 ⋅ 0.1 ⋅ 1.6 ⋅ 25
P c = 4.0 W
IC
P s = δ S ⋅ [ E on + Eoff ] ⋅ fo ⋅ ----40
Eon = 0.004 J
E off = 0.006 J
f o = 20000 Hz
25
P s = 1 ⋅ [ 0.004 + 0.006 ] ⋅ 20000 ⋅ -----40
P s = 125 W
P d = δs ⋅ [ 1 – δ PWM ] ⋅ V f ⋅ If
V f = 1.3 V
I F = 25 A
P d = 1 ⋅ [ 1 – 0.1 ] ⋅ 1.3 ⋅ 25
P d = 29.25 W
TjIGBT = [ Pc + Ps ] ⋅ θ jcIGBT + TC
θ jcIGBT = 0.45°C/W
TC = 85° C
TjIGBT = [ 4 + 125 ] ⋅ 0.45° + 85°
TjIGBT = 143° C
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SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
T jDIODE = [ P d ] ⋅ θ jcDIODE + T C
θ jcDIODE = 0.85°C/W
T C = 85° C
T jDIODE = 29.25 ⋅ 0.85° + 85°
T jDIODE = 109.9° C
Maximum hybrid dissipation will be:
P HYBRID = 2 [ P s + Pc + Pd ]
P HYBRID = 2 [ 125 + 4 + 29.25 ]
P HYBRID = 316.5 W
MECHANICAL
The ACT5101-1 construction utilizes only the highest quality materials and manufacturing available to
ensure a high reliability, robust power hybrid design. The case is selected for best thermal conductivity,
hermeticity, and voltage/current carrying capability. The case is electrically isolated from the circuit and
can withstand 1500 VAC from pin to case, and input pins to output pins, therefore no insulating pads or
washers are required for mounting.
In order to remove the heat being generated from the ACT5101-1, it must be bolted down to the motor, a
heat sink or the actual system chassis such as a missile structure or aircraft wing rib for example. Thermally
conductive grease or a "Sil-pad" is recommended between the hybrid case baseplate and its mounting
surface to fill in any surface imperfections and improve the heat transfer from case-to-heat sink. It is
important to keep the temperature at this interface no greater than +125 degrees C in order to maintain
safe semi-conductor junction temperatures.
The leads of the ACT5101-1 can be formed upward, away from the baseplate, so that a PC board can be
mounted directly above it. A wiring harness can also be hand-wired and soldered directly to the leads of
the ACT5101-1 if this is preferred.
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INPUTS
OUTPUTS
UA UB UC LA LB LC SD PHASE A PHASE B PHASE C
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
1
1
1
0
0
0
0
0
0
1
1
1
1
1
1
0
0
0
0
0
0
1
1
1
0
0
0
1
1
1
0
0
0
1
1
1
1
0
0
1
0
0
0
0
0
1
1
1
1
1
0
1
1
0
0
1
0
1
1
1
1
1
0
1
0
0
0
0
0
1
0
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Z
L
L
Z
L
L
L
L
L
H
H
H
H
H
Z
H
H
Z
L
Z
L
H
H
H
H
H
Z
Z
L
L
L
L
L
H
Z
H
H
H
H
L
Z
L
H
Z
H
L
Z
L
H
Z
H
L
L
L
1
1
0
1
1
0
1
1
0
1
0
1
1
0
1
1
0
1
0
0
0
Z
L
H
Z
L
H
Z
L
H
X
X
X
X
X
X
1
Z
Z
Z
H=high level, L=low level, X=irrelevant, Z=high impedance (off)
PIN
Aeroflex Circuit Technology
FUNCTION
PIN
FUNCTION
1
RTN C
26
GND
2
PHASE C
25
UC
3
V+C
24
LC
4
N/C
23
SD
5
RTN B
22
GND
6
PHASE B
21
UB
7
V+B
20
LB
8
RTN A
19
GND
9
PHASE A
18
UA
10
N/C
17
LA
11
V+A
16
N/C
12
+15 V
15
N/C
13
N/C
14
N/C
12
SCD5101-1 REV F 8/29/02 Plainview NY (516) 694-6700
Power Package Outline
Chamfer
.035-.065 X 45°
4X .128 -.005, +.002 THRU
1
26
3.000
2.750
See note 3
12X .200
13
14
.300
.120
.125
1.860
.250
1.600
2.100
2.010
26X
.048 - .052
.057
±.020
.003IN/IN
.54-.58
.330
.003IN/IN
.050
.165
Notes:
1. Package contains BeO substrate.
2. Dimensions Tolerance: ±.005, unless otherwise noted.
3. Pin Tolerance: non-cumulative
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CIRCUIT TECHNOLOGY
Ordering Information
Model Number
ACT5101-1
Screening
Operating Temperature Temperature Range -55°C to +125°C,
Screened to the individual test methods of MIL-STD-883 IAW MIL-PRF-38534 Class H
ACT5101-1- 7
Commercial Flow, 25°C testing only
ACT5101-1- A
Commercial Flow, -55°C to +105°C testing only
ACT5101-1- I
Commercial Flow, -40°C to +85°C testing only
ACT5101-1- C
Commercial Flow, -0°C to +70°C testing only
The information contained in this data sheet is believed to be accurate; however, Aeroflex Laboratories Incorporated assumes no
responsibility for its use, and no license or rights are granted by implication or othewise in connection therewith.
Specifications subject to change without notice
Telephone: (516) 694-6700
FAX:
(516) 694-6715
Toll Free Inquiries: 1- (800) 843-1553
Aeroflex Circuit Technology
35 South Service Road
Plainview New York 11803
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