BCV 62 PNP Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C2 (1) C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration Package BCV 62A 3Js 1 = C2 2 = C1 3 = E1 4 = E2 SOT-143 BCV 62B 3Ks 1 = C2 2 = C1 3 = E1 4 = E2 SOT-143 BCV 62C 3Ls 1 = C2 2 = C1 3 = E1 4 = E2 SOT-143 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 30 VCBO 30 6 DC collector current VEBS IC 100 Peak collector current ICM 200 Base peak current (transistor T1) IBM 200 Total power dissipation, TS = 99 °C Ptot 300 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage mA -65 ... 150 Thermal Resistance Junction ambient 1) RthJA ≤240 Junction - soldering point RthJS ≤170 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu 1 Oct-22-1999 BCV 62 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 30 - - V(BR)CBO 30 - - V(BR)EBO 6 - - ICBO - - 15 nA ICBO - - 5 µA hFE 100 - - - BCV 62A 125 180 220 BCV 62B 220 290 475 BCV 62C 420 520 800 DC Characteristics of T1 Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 0.1 mA, VCE = 5 V hFE DC current gain 1) IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) mV VCEsat IC = 10 mA, IB = 0.5 mA - 75 300 IC = 100 mA, IB = 5 mA - 250 650 IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 850 - IC = 2 mA, VCE = 5 V 600 650 750 IC = 10 mA, VCE = 5 V - - 820 Base-emitter saturation voltage 1) VBEsat Base-emitter voltage 1) VBE(ON) 1) Pulse test: t ≤ 300µs, D = 2% 2 Oct-22-1999 BCV 62 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. typ. Unit max. DC Characteristics Base-emitter forward voltage V VBES IE = 10 µA IE = 250 mA Matching of transistor T1 and transistor T2 0.4 - - - - 1.8 - IC1 / IC2 at IE2 = 0.5mA and VCE1 = 5V - - - TA = 25 °C 0.7 - 1.3 TA = 150 °C 0.7 - 1.3 IE2 - 5 - mA fT - 250 - MHz Ccb - 3 - pF Ceb - 8 - F - 2 - dB h11e - 4.5 - kΩ h12e - 2 - 10-4 h21e 100 - 900 h22e - 30 - Thermal coupling of transistor T1 and transistor T2 1) T1: VCE = 5V Maximum current of thermal stability of IC1 AC characteristics of transistor T1 Transition frequency IC = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz Short-circuit forward current transf.ratio - IC = 1 mA, VCE = 10 V, f = 1 kHz Open-circuit output admittance µS IC = 1 mA, VCE = 10 V, f = 1 kHz 1) Witout emitter resistor. Device mounted on alumina 15mm x 16.5mm x 0.7mm 3 Oct-22-1999 BCV 62 Test circuit for current matching A Ι C1 VCE1 ... 2 T1 1 Ι E2 = constant T2 3 4 VCO VCO EHN00003 Note: Voltage drop at contacts: VCO < 2/3 VT = 16mV Characteristic for determination of VCE1 at specified RE range with IE2 as parameter under condition of IC1/IE2 = 1.3 A Ι C1 VCE1 ... 2 T1 1 Ι E2 = constant T2 3 RE 4 RE EHN00004 Note: BCV 62 with emitter resistors 4 Oct-22-1999 BCV 62 Total power dissipation Ptot = f (TA*;TS ) Permissible pulse load * Package mounted on epoxy Ptotmax / PtotDC = f (tp) 400 BCV 62 EHP00939 10 3 BCV 62 EHP00941 Ptot max 5 Ptot DC Ptot mW D= tp T tp T 300 10 2 5 TS 200 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 TA 10 1 100 0 5 0 50 100 ˚C 10 0 -6 10 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp TA ; TS 5 Oct-22-1999