BCX71J General Purpose Transistor PNP Silicon • Moisture Sensitivity Level: 1 MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –45 Vdc Emitter-Base Voltage VEBO –5.0 Vdc IC –100 mAdc Symbol Max Unit Total Device Dissipation (Note 1.) TA = 25°C Derate above 25°C PD 350 mW 2.8 mW/°C Storage Temperature Tstg 150 °C Thermal Resistance – Junction-to-Ambient (Note 1.) RJA 357 °C/W Collector Current – Continuous COLLECTOR 3 1 BASE THERMAL CHARACTERISTICS Characteristic 2 EMITTER 3 1 2 1. Package mounted on 99.5% alumina 10 X 8 X 0.6 mm. SOT–23 CASE 318 STYLE 6 MARKING DIAGRAM BJ M BJ M = Specific Device Marking = Date Code ORDERING INFORMATION Semiconductor Components Industries, LLC, 2002 May, 2002 – Rev. 1 1 Device Package Shipping BCX71JLT1 SOT–23 3000/Tape & Reel Publication Order Number: BCX71J/D BCX71J ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –45 – –5.0 – – – –20 –20 40 250 100 250 – 460 – 500 – – –0.25 –0.55 –0.6 –0.68 –0.85 –1.05 –0.6 –0.75 – 6.0 – 6.0 – 150 – 800 Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO Collector–Base Breakdown Voltage (IE = 1.0 Adc, IE = 0) V(BR)EBO Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150°C) Vdc Vdc ICES nAdc Adc ON CHARACTERISTICS DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) hFE Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.25 mAdc) (IC = 50 mAdc, IB = 1.25 mAdc) VCE(sat) Base–Emitter Saturation Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(sat) Base–Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) VBE(on) Output Capacitance (VCE = 10 Vdc, IC = 0, f = 1.0 MHz) – Vdc Vdc Vdc Cobo Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) pF NF dB SWITCHING CHARACTERISTICS Turn–On Time (IC = 10 mAdc, IB1 = 1.0 mAdc) ton Turn–Off Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) toff ns ns TYPICAL NOISE CHARACTERISTICS (VCE = –5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 A 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 A 3.0 2.0 100 A 1.0 mA 300 A IC = 1.0 mA 3.0 2.0 300 A 1.0 0.7 0.5 100 A 0.3 30 A 0.2 1.0 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 0.1 5.0 k 10 k BANDWIDTH = 1.0 Hz RS ≈ ∞ 10 A 10 Figure 1. Noise Voltage 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) Figure 2. Noise Current http://onsemi.com 2 5.0k 10k BCX71J NOISE FIGURE CONTOURS 1.0M 500k BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 200k 100k 50k 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 1.0M 500k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) (VCE = –5.0 Vdc, TA = 25°C) 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 200 100 2.0 dB 3.0 dB 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: 20k 10k NF 20 log10 0.5 dB 5.0k 2.0k 1.0k 500 200 100 30 en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10–23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 2 2 12 S In RS en2 4KTR 4KTRS 500 700 1.0k IC, COLLECTOR CURRENT (A) Figure 5. Wideband http://onsemi.com 3 BCX71J TYPICAL STATIC CHARACTERISTICS h FE, DC CURRENT GAIN 400 TJ = 125°C 25°C 200 -55°C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 1.0 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 TA = 25°C PULSE WIDTH = 300 s 80 DUTY CYCLE ≤ 2.0% 300 A 200 A 150 A 40 100 A 20 50 A 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 0 VCE(sat) @ IC/IB = 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 7. Collector Saturation Region 1.4 250 A 60 0 20 IB = 400 A 350 A 50 100 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 0 *VC for VCE(sat) 25°C to 125°C -55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 Figure 9. “On” Voltages VB for VBE 0.2 -55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 4 50 100 BCX71J TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 3.0 tf 30 td @ VBE(off) = 0.5 V 2.0 100 70 50 20 50 70 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 10 -1.0 100 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 IC, COLLECTOR CURRENT (mA) Figure 11. Turn–On Time -50 -70 -100 Figure 12. Turn–Off Time 500 10 TJ = 25°C VCE = 20 V 300 5.0 V 200 TJ = 25°C 7.0 C, CAPACITANCE (pF) f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) VCC = -3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 Cib 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current–Gain — Bandwidth Product Figure 14. Capacitance http://onsemi.com 5 10 20 50 BCX71J TYPICAL DYNAMIC CHARACTERISTICS hfe ≈ 200 @ IC = –1.0 mA 7.0 5.0 VCE = -10 Vdc f = 1.0 kHz TA = 25°C 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 200 hoe, OUTPUT ADMITTANCE ( mhos) 10 100 70 50 30 20 VCE = 10 Vdc f = 1.0 kHz TA = 25°C hfe ≈ 200 @ IC = 1.0 mA 10 7.0 5.0 3.0 2.0 0.1 100 0.2 Figure 15. Input Impedance 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance 104 IC, COLLECTOR CURRENT (nA) hie , INPUT IMPEDANCE (k Ω ) 20 103 VCC = 30 V ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 -40 -20 0 +20 +40 +60 +80 +100 +120 +140 +160 TJ, JUNCTION TEMPERATURE (°C) Figure 17. Typical Collector Leakage Current http://onsemi.com 6 50 100 BCX71J INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT-23 POWER DISSIPATION into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. The power dissipation of the SOT-23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = PD = 150°C – 25°C = 225 milliwatts 556°C/W The 556°C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, the power dissipation can be doubled using the same footprint. TJ(max) – TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 7 BCX71J SOLDER STENCIL GUIDELINES or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass TYPICAL SOLDER HEATING PROFILE The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177–189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 18 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. STEP 1 PREHEAT ZONE 1 RAMP" 200°C 150°C STEP 2 STEP 3 VENT HEATING SOAK" ZONES 2 & 5 RAMP" DESIRED CURVE FOR HIGH MASS ASSEMBLIES STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 SPIKE" SOAK" 205° TO 219°C PEAK AT SOLDER JOINT 170°C 160°C 150°C 140°C 100°C 100°C 50°C STEP 6 STEP 7 VENT COOLING SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) DESIRED CURVE FOR LOW MASS ASSEMBLIES TMAX TIME (3 TO 7 MINUTES TOTAL) Figure 18. Typical Solder Heating Profile http://onsemi.com 8 BCX71J PACKAGE DIMENSIONS SOT–23 TO–236AB CASE 318–08 ISSUE AF NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 1 V B S 2 G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR http://onsemi.com 9 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BCX71J Notes http://onsemi.com 10 BCX71J Notes http://onsemi.com 11 BCX71J Thermal Clad is a registered trademark of the Bergquist Company ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 12 BCX71J/D