ETC BCY78-7

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS
BCY77, BCY78
BCY79
TO-18
Complementary BCY58/59
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BCY77
BCY78
BCY79
VCEO
60
32
45
Collector -Emitter Voltage
VCES
60
32
45
Collector -Emitter Voltage
VEBO
5.0
5.0
5.0
Emitter -Base Voltage
IC
100
200
200
Collector Current Continuous
IB
50
50
50
Base Current Continuous
PD
600
Power [email protected] Ta=25 degC
1.0
@ TC=45 deg C
Tj, Tstg
-65 to +200
Operating And Storage Junction
Temperature Range
THERMAL RESISTANCE
Rth(j-a)
450
Junction to Ambient in Free Air
Rth(j-c)
150
Junction to Case
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
BCY77 BCY78
VCEO
IC=2mA,IB=0
>60
>32
Collector -Emitter Voltage
VCES
IC=10uA, VBE=0
>60
>32
Collector -Emitter Voltage
VEBO
IE=1uA, IC=0
>5.0
>5.0
Emitter-Base Voltage
ICES
VCE=VCE max,VBE=0
<100
<100
Collector-Cut off Current
VCE=50V, VBE=0
<20
VCE=25V, VBE=0
<20
VCE=35V, VBE=0
-
Emitter Cut off Current
Base Emitter on Voltage
Continental Device India Limited
TA=150 deg C
VCE=60V, VBE=0
VCE=25V, VBE=0
VCE=35V, VBE=0
ICEX
VCE=VCE, max
VBE=0.2V, Ta=100 deg C
IEBO
VEB=4V, IC=0
VBE(on) IC=10uA, VCE=5V
IC=2mA, VCE=5V
IC=10mA,VCE=1V
IC=50mA,VCE=1V (2)
IC=100mA,VCE=1V (1)
Data Sheet
UNIT
V
V
V
mA
mA
mW
W
deg C
K/W
K/W
BCY79 UNIT
>45
V
>45
V
>5.0
V
<100
nA
.nA
nA
<20
nA
<10
<20
<10
<20
.<10
<20
uA
uA
uA
uA
<20
<20
TYP 0.55
0.6 to 0.75
TYP 0.68
TYP 0.72
TYP 0.75
<20
nA
V
V
V
V
V
Page 1 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
DC Current
VCE(Sat) IC=10mA,IB=0.25mA
IC=50mA,IB=1.25mA (2)
IC=100mA,IB=2.5mA (1)
VBE(Sat) IC=10mA,IB=0.25mA
IC=50mA,IB=1.25mA (2)
IC=100mA,IB=2.5mA (1)
hFE
IC=10uA, VCE=5V
Only BCY78/79
IC=2mA, VCE=5V
Only BCY78/79
IC=10mA, VCE=1V
Only BCY78/79
IC=100mA, VCE=1V (1)
Only BCY78/79
IC=50mA, VCE=1V (2)
Small Signal Current Gain
hfe
IC=2mA,VCE=5V, f=1kHz
Input Impedance
hie
Only BCY78/79
IC=2mA,VCE=5V, f=1kHz
Voltage Feedback Ratio
hre
Only BCY78/79
IC=2mA,VCE=5V, f=1kHz
Output Admittance
hoe
Only BCY78/79
IC=2mA,VCE=5V, f=1kHz
Only BCY78/79
Continental Device India Limited
Data Sheet
BCY77-79
VALUE
7
8
9
10
7
8
9
10
7
8
9
10
7
8
9
10
7
8
9
7
8
9
10
7
8
9
10
7
8
9
10
7
8
9
10
<0.25
<0.80
<0.80
0.60-0.85
0.70-1.2
0.70-1.2
TYP140
>30
>40
>100
120-220
180-310
250-460
380-630
>80
120-400
160-630
240-1000
>40
>45
>60
>60
>40
>45
>60
125-250
175-350
250-500
350-700
1.6-4.5
2.5-6.0
3.2-8.5
TYP 7.5
TYP1.5
TYP2.0
TYP2.0
TYP 3.0
<30
<50
<60
<100
UNIT
V
V
V
V
V
V
kohms
X10-4
umhos
Page 2 of 4
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN
NF
VCE=5V, IC=0.2mA
Noise Figure
RS=2khoms, f=1kHz,
B=200Hz
ft
VCE=5V,IC=10mA, f=100MHz
Transition Frequency
Ccbo
VCB=10V,IE=0, f=1MHz
Collector base Capacitance
Cebo
VEB=0.5V,IC=0, f=1MHz
Emitter base Capacitance
BCY77-79
TYP
<6.0
MAX
TYP180
<7.0
<15
UNIT
dB
MHz
pF
pF
SWITCHING CHARACTERISTICS
BCY77/78/79
Delay time
Rise time
Turn on time
Storage time
Fall time
Turn off time
td
tr
ton
ts
tf
toff
BCY78/79
Delay Time
Rise Time
Turn-on time
Storage Time
Fall time
Turn-0ff time
td
tr
ton
ts
tf
toff
IC=10mA, IB1=IB2=1mA
VBB=3.6V, R1=R2=5kohms
RL=990 ohms
IC=100mA, IB1=1B2=10mA
R1=500 ohms,R2=700 ohms
RL=98 ohms, VBB=5V
BCY77
td
Delay Time
tr
IC=50mA, IB1=1B2=5mA
Rise Time
ton
R1=1kohms,R2=1.3kohms
Turn-on time
ts
RL=195 ohms, VBB=4.7V
Storage Time
tf
Fall time
toff
Turn-0ff time
(1) ONLY BCY78/79
(2) ONLY BCY77
Pulse Test : Pulse Width=300us, Duty Cycle=2%
Continental Device India Limited
Data Sheet
-
35
50
400
80
-
150
800
ns
ns
ns
ns
ns
ns
-
5.0
50
250
200
-
150
800
ns
ns
ns
ns
ns
ns
-
15
50
300
150
-
150
800
ns
ns
ns
ns
ns
ns
Page 3 of 4
TO-18 Metal Can Package
A
G
K
2
F
1
3
H
All diminsions in mm.
E
C
B
DIM
A
B
C
D
E
F
G
H
J
K
L
MIN
MA X
5.24
5.84
4.52
4.97
4.31
5.33
0.40
0.53
—
0.76
—
1.27
—
2.97
0.91
1.17
0.71
1.21
12.70
—
45 DE G
L
J
D
3
2
1
PIN CONFIGU RATION
1. EMITTER
2. BASE
3. COLLECTOR
Packing Detail
PACKAGE
TO-18
STANDARD PACK
Details
Net Weight/Qty
1K/polybag
350 gm/1K pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
5.0K
OUTER CARTON BOX
Size
Qty
Gr Wt
34 kgs
17" x 15" x 13.5"
80.0K
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web
Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail [email protected]
www.cdil.com
Continental Device India Limited
Data Sheet
Page 4 of 4