IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS BCY77, BCY78 BCY79 TO-18 Complementary BCY58/59 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BCY77 BCY78 BCY79 VCEO 60 32 45 Collector -Emitter Voltage VCES 60 32 45 Collector -Emitter Voltage VEBO 5.0 5.0 5.0 Emitter -Base Voltage IC 100 200 200 Collector Current Continuous IB 50 50 50 Base Current Continuous PD 600 Power Dissipation@ Ta=25 degC 1.0 @ TC=45 deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-a) 450 Junction to Ambient in Free Air Rth(j-c) 150 Junction to Case ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION BCY77 BCY78 VCEO IC=2mA,IB=0 >60 >32 Collector -Emitter Voltage VCES IC=10uA, VBE=0 >60 >32 Collector -Emitter Voltage VEBO IE=1uA, IC=0 >5.0 >5.0 Emitter-Base Voltage ICES VCE=VCE max,VBE=0 <100 <100 Collector-Cut off Current VCE=50V, VBE=0 <20 VCE=25V, VBE=0 <20 VCE=35V, VBE=0 - Emitter Cut off Current Base Emitter on Voltage Continental Device India Limited TA=150 deg C VCE=60V, VBE=0 VCE=25V, VBE=0 VCE=35V, VBE=0 ICEX VCE=VCE, max VBE=0.2V, Ta=100 deg C IEBO VEB=4V, IC=0 VBE(on) IC=10uA, VCE=5V IC=2mA, VCE=5V IC=10mA,VCE=1V IC=50mA,VCE=1V (2) IC=100mA,VCE=1V (1) Data Sheet UNIT V V V mA mA mW W deg C K/W K/W BCY79 UNIT >45 V >45 V >5.0 V <100 nA .nA nA <20 nA <10 <20 <10 <20 .<10 <20 uA uA uA uA <20 <20 TYP 0.55 0.6 to 0.75 TYP 0.68 TYP 0.72 TYP 0.75 <20 nA V V V V V Page 1 of 4 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current VCE(Sat) IC=10mA,IB=0.25mA IC=50mA,IB=1.25mA (2) IC=100mA,IB=2.5mA (1) VBE(Sat) IC=10mA,IB=0.25mA IC=50mA,IB=1.25mA (2) IC=100mA,IB=2.5mA (1) hFE IC=10uA, VCE=5V Only BCY78/79 IC=2mA, VCE=5V Only BCY78/79 IC=10mA, VCE=1V Only BCY78/79 IC=100mA, VCE=1V (1) Only BCY78/79 IC=50mA, VCE=1V (2) Small Signal Current Gain hfe IC=2mA,VCE=5V, f=1kHz Input Impedance hie Only BCY78/79 IC=2mA,VCE=5V, f=1kHz Voltage Feedback Ratio hre Only BCY78/79 IC=2mA,VCE=5V, f=1kHz Output Admittance hoe Only BCY78/79 IC=2mA,VCE=5V, f=1kHz Only BCY78/79 Continental Device India Limited Data Sheet BCY77-79 VALUE 7 8 9 10 7 8 9 10 7 8 9 10 7 8 9 10 7 8 9 7 8 9 10 7 8 9 10 7 8 9 10 7 8 9 10 <0.25 <0.80 <0.80 0.60-0.85 0.70-1.2 0.70-1.2 TYP140 >30 >40 >100 120-220 180-310 250-460 380-630 >80 120-400 160-630 240-1000 >40 >45 >60 >60 >40 >45 >60 125-250 175-350 250-500 350-700 1.6-4.5 2.5-6.0 3.2-8.5 TYP 7.5 TYP1.5 TYP2.0 TYP2.0 TYP 3.0 <30 <50 <60 <100 UNIT V V V V V V kohms X10-4 umhos Page 2 of 4 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN NF VCE=5V, IC=0.2mA Noise Figure RS=2khoms, f=1kHz, B=200Hz ft VCE=5V,IC=10mA, f=100MHz Transition Frequency Ccbo VCB=10V,IE=0, f=1MHz Collector base Capacitance Cebo VEB=0.5V,IC=0, f=1MHz Emitter base Capacitance BCY77-79 TYP <6.0 MAX TYP180 <7.0 <15 UNIT dB MHz pF pF SWITCHING CHARACTERISTICS BCY77/78/79 Delay time Rise time Turn on time Storage time Fall time Turn off time td tr ton ts tf toff BCY78/79 Delay Time Rise Time Turn-on time Storage Time Fall time Turn-0ff time td tr ton ts tf toff IC=10mA, IB1=IB2=1mA VBB=3.6V, R1=R2=5kohms RL=990 ohms IC=100mA, IB1=1B2=10mA R1=500 ohms,R2=700 ohms RL=98 ohms, VBB=5V BCY77 td Delay Time tr IC=50mA, IB1=1B2=5mA Rise Time ton R1=1kohms,R2=1.3kohms Turn-on time ts RL=195 ohms, VBB=4.7V Storage Time tf Fall time toff Turn-0ff time (1) ONLY BCY78/79 (2) ONLY BCY77 Pulse Test : Pulse Width=300us, Duty Cycle=2% Continental Device India Limited Data Sheet - 35 50 400 80 - 150 800 ns ns ns ns ns ns - 5.0 50 250 200 - 150 800 ns ns ns ns ns ns - 15 50 300 150 - 150 800 ns ns ns ns ns ns Page 3 of 4 TO-18 Metal Can Package A G K 2 F 1 3 H All diminsions in mm. E C B DIM A B C D E F G H J K L MIN MA X 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 — 0.76 — 1.27 — 2.97 0.91 1.17 0.71 1.21 12.70 — 45 DE G L J D 3 2 1 PIN CONFIGU RATION 1. EMITTER 2. BASE 3. COLLECTOR Packing Detail PACKAGE TO-18 STANDARD PACK Details Net Weight/Qty 1K/polybag 350 gm/1K pcs INNER CARTON BOX Size Qty 3" x 7.5" x 7.5" 5.0K OUTER CARTON BOX Size Qty Gr Wt 34 kgs 17" x 15" x 13.5" 80.0K Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 4 of 4