ETC BD135-25

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-126 (SOT-32) Plastic Package
BD135, 137, 139
BD135, BD137, BD139
NPN PLASTIC POWER TRANSISTORS
Complementary BD136, 138, 140
Medium Power Linear and Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 0.5 A; IB = 0.05 A
D.C. current gain
IC = 0.15 A; VCE = 2 V
Data Sheet
V
V
A
W
°C
max.
0.5
V
min.
max.
40
250
max.
max.
max.
max.
max.
VCEsat
hFE
RATINGS (at TA=25 C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
VCBO
Collector-emitter voltage (open base)
VCEO
Emitter-base voltage (open collector)
VEBO
Continental Device India Limited
137 139
60 100
60
80
1.5
12.5
150
VCBO
VCEO
IC
Ptot
Tj
max.
max.
max.
135
45
45
135
45
45
137
60
60
5.0
139
100
80
V
V
V
Page 1 of 3
BD135, BD137, BD139
Collector current
IC
Base current
IB
Total power dissipation up to TA = 25°C P tot
Derate above 25°C
Total power dissipation up to TC = 25°C P tot
Derate above 25°C
Junction temperature
Tj
Storage temperature
T stg
THERMAL RESISTANCE
From junction to case
From junction to ambient
max.
max.
max.
max
max.
max
max.
A
A
W
mW/°C
W
mW/°C
°C
ºC
10
100
°C/W
°C/W
R th j–c
R th j–a
CHARACTERISTICS
T amb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; TC = 125°C
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 0.03 A; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 0.5 A; IB = 0.05 A
Base-emitter on voltage
IC = 0.5A; VCE = 2V
D.C. current gain
IC = 0.005 A; VCE = 2 V*
1.5
0.5
1.25
10
12.5
100
150
–65 to +150
135
137
139
ICBO
ICBO
max.
max.
0.1
10
µA
µA
IEBO
max.
10
µA
V CEO(sus)*
V CBO
V EBO
min.
min.
min.
V CEsat*
max.
0.5
V
V BE(on)*
max.
1.0
V
hFE*
min.
25
IC = 0.15 A; VCE = 2 V**
hFE*
min.
max.
40
250
IC = 0.5 A; VCE = 2 V*
hFE*
min.
25
–6
min. 40
max. 100
–10
min. 63
max. 160
–16
min. 100
max. 250
–25
min. 160
max. 400
** hFE classification:
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
Continental Device India Limited
Data Sheet
45
45
60
60
5.0
80
100
V
V
V
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3