ETC BD175-16

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
BD175, BD177, BD179
BD176, BD178, BD180
TO-126 (SOT-32) Plastic Package
BD175, 177, 179
BD176, 178, 180
NPN PLASTIC POWER TRANSISTORS
PNP PLASTIC POWER TRANSISTORS
Medium Power Liner and Switching Applications
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
2
3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
Total power dissipation up to TC = 25°C
Junction temperature
Collector-emitter saturation voltage
IC = 1 A; IB = 0.1 A
D.C. current gain
IC = 150 mA; VCE = 2 V
Continental Device India Limited
Data Sheet
VCBO
VCEO
IC
Ptot
Tj
D175
B176
max. 45
max. 45
max.
max.
max.
177
178
60
60
3.0
30
150
VCEsat
max.
0.8
hFE
min.
40
179
180
80
80
V
V
A
W
°C
V
Page 1 of 3
BD175, BD177, BD179
BD176, BD178, BD180
RATINGS (at T A=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Collector current (Peak value)
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
Tstg
THERMAL RESISTANCE
From junction to case
Rth j–c
D175
D176
max. 45
max. 45
max.
max.
max.
max.
max.
–65
CHARACTERISTICS
T amb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 45 V
IE = 0; VCB = 60 V
IE = 0; VCB = 80 V
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 1 A; IB = 0.1 A
Base-emitter on voltage
IC = 1 A; VCE = 2 V
D.C. curent gain
IC = 150 mA; VCE = 2 V**
IC = 1 A; VCE = 2 V
Transition frequency
IC = 250 mA; VCE = 10V
** hFE classification:
only BD175, 176
177 179
178 180
60
80
60
80
5.0
3.0
7.0
30
150
to +150
V
V
V
A
A
W
°C
ºC
4.16
°C/W
D175
D176
177
178
179
180
ICBO
ICBO
ICBO
max. 100
max. –
max. –
–
100
–
–
–
100
IEBO
max.
1.0
VCEO(sus)*
VCBO
VEBO
min.
min.
min.
VCEsat*
max.
0.8
V
VBE(on)*
max.
1.3
V
hFE*
hFE*
min.
min.
40
15
fT
min.
3.0
–6
min. 40
max. 100
–10
min. 63
max. 160
–16
min. 100
max. 250
45
45
60
60
5.0
µA
µA
µA
mA
80
80
V
V
V
MHz
* Pulse test: pulse duration ≤ 300 µs; duty cycle ≤ 1.5%.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
Page 3 of 3