IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer BD175, BD177, BD179 BD176, BD178, BD180 TO-126 (SOT-32) Plastic Package BD175, 177, 179 BD176, 178, 180 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Liner and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ALL DIMENSIONS IN MM ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25°C Junction temperature Collector-emitter saturation voltage IC = 1 A; IB = 0.1 A D.C. current gain IC = 150 mA; VCE = 2 V Continental Device India Limited Data Sheet VCBO VCEO IC Ptot Tj D175 B176 max. 45 max. 45 max. max. max. 177 178 60 60 3.0 30 150 VCEsat max. 0.8 hFE min. 40 179 180 80 80 V V A W °C V Page 1 of 3 BD175, BD177, BD179 BD176, BD178, BD180 RATINGS (at T A=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current Collector current (Peak value) Total power dissipation up to TC = 25°C Junction temperature Storage temperature VCBO VCEO VEBO IC ICM Ptot Tj Tstg THERMAL RESISTANCE From junction to case Rth j–c D175 D176 max. 45 max. 45 max. max. max. max. max. –65 CHARACTERISTICS T amb = 25°C unless otherwise specified Collector cutoff current IE = 0; VCB = 45 V IE = 0; VCB = 60 V IE = 0; VCB = 80 V Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 100 mA; IB = 0 IC = 1 mA; IE = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 1 A; IB = 0.1 A Base-emitter on voltage IC = 1 A; VCE = 2 V D.C. curent gain IC = 150 mA; VCE = 2 V** IC = 1 A; VCE = 2 V Transition frequency IC = 250 mA; VCE = 10V ** hFE classification: only BD175, 176 177 179 178 180 60 80 60 80 5.0 3.0 7.0 30 150 to +150 V V V A A W °C ºC 4.16 °C/W D175 D176 177 178 179 180 ICBO ICBO ICBO max. 100 max. – max. – – 100 – – – 100 IEBO max. 1.0 VCEO(sus)* VCBO VEBO min. min. min. VCEsat* max. 0.8 V VBE(on)* max. 1.3 V hFE* hFE* min. min. 40 15 fT min. 3.0 –6 min. 40 max. 100 –10 min. 63 max. 160 –16 min. 100 max. 250 45 45 60 60 5.0 µA µA µA mA 80 80 V V V MHz * Pulse test: pulse duration ≤ 300 µs; duty cycle ≤ 1.5%. Continental Device India Limited Data Sheet Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3