ON Semiconductor FULL PAK High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art bipolar fabrication techniques to provide excellent switching, high voltage capability and low saturation voltage. • • • • • • • BUT11AF POWER TRANSISTOR 5.0 AMPERES 450 VOLTS 40 WATTS 1000 Volt VCES Rating Low Base Drive Requirements Isolated Overmold Package Improved System Efficiency No Isolating Washers Required Reduced System Cost High Isolation Voltage Capability (4500 VRMS) CASE 221D–02 TO–220 TYPE MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Sustaining Voltage VCEO(sus) 450 Vdc Collector–Emitter Breakdown Voltage VCES 1000 Vdc Emitter–Base Voltage VEBO 9.0 Vdc RMS Isolation Voltage (For 1 sec, Per Figure 7 VISOL1 4500 TA = 25°C, Rel. Humidity < 30%) Per Figure 8 VISOL2 3500 Per Figure 9 VISOL3 2500 Collector Current — Continuous Collector Current — Pulsed (1) IC ICM 5.0 10 Adc Base Current — Continuous Base Current — Pulsed (1) IB IBM 2.0 4.0 Adc Total Power Dissipation @ TC = 25°C* Derated above 25°C PD 40 0.32 Watts W/°C TJ, Tstg – 65 to +150 °C RθJC 3.125 °C/W TL 260 °C Operating and Storage Temperature Range V THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case* Maximum Lead Temperature for soldering purposes 1/8″ from case for 5 sec. (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. *Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied, and a mounting torque of 6 to 8 in . lbs. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 4 1 Publication Order Number: BUT11AF/D BUT11AF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 450 – – Vdc – – – – 1.0 2.0 OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage (Figures 1 & 2) (IC = 100 mAdc, IB = 0, L = 25 µH) Collector Cutoff Current (VCE = 1000 Vdc, VBE = 0) (VCE = 1000 Vdc, VBE = 0, TJ = 125°C) ICES mAdc Emitter-Base Leakage (VEB = 9.0 Vdc, IC = 0) IEBO – – 10 mAdc Collector-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) VCE(sat) – – 1.5 Vdc Base-Emitter Saturation Voltage (IC = 2.5 Adc, IB = 0.5 Adc) VBE(sat) – – 1.5 Vdc DC Current Gain (IC = 5.0 mAdc, VCE = 5.0 Vdc) hFE 10 – – – – – Cc-hs – 15 – pF ts – 1100 1400 ns tfi – 80 150 ts – 1200 1500 tfi – 140 300 ton – – 1000 ts – – 4000 tf – – 800 ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS Insulation Capacitance (Collector to External Heatsink) SWITCHING CHARACTERISTICS Inductive Load (Figures 3 & 4) Storage TJ = 25°C Fall Time Storage IC = 2.5 2 5 Adc, Adc IB1 = 0.5 0 5 Adc TJ = 100°C Fall Time Resistive Load (Figures 5 & 6) Turn-On Time Storage Time IC = 2.5 Adc,, IB1 = IB2 = 0.5 Adc Fall Time ns (1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. +50 V 250 L 200 IC (mA) 100-200 Ω VERT. OSCILLOSCOPE VIN 0 100 T 0 MIN VCEO(sus) tp HOR. OSCILLOSCOPE 1 Ω VCE (V) Figure 2. Test Circuit for VCEO(sus) Figure 1. Oscilloscope Display for Sustaining Voltage http://onsemi.com 2 BUT11AF tr VCC IB IB on 90% 10% t RL VIN IB off RB 0 tp IC on 90% T.U.T. T IC VCC = 250 V VIN = -6 to +8 V tp = 20 µs tp = 0.01 T 10% td ton Figure 3. Test Circuit Resistive Load tf ts toff t Figure 4. Switching Times Waveforms with Resistive Load VCC tr IB1 90% IB LC 10% t VCL +IB1 LB -VBE IB2 T.U.T. IC on 90% IC 7Z89211.2 VCL = 300 V VCC = 30 V VEB = 5 V LB = 1 µH VCL = 200 µH 10% ts toff Figure 5. Test Circuit Inductive Load tf Figure 6. Switching Times Waveforms with Inductive Load http://onsemi.com 3 BUT11AF TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS HEATSINK 0.107″ MIN MOUNTED FULLY ISOLATED PACKAGE LEADS LEADS HEATSINK HEATSINK 0.107″ MIN 0.110″ MIN Figure 7. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 8. Clip Mounting Position for Isolation Test Number 2 Figure 9. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION 4-40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 10. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. http://onsemi.com 4 BUT11AF PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221D–02 ISSUE D –T– –B– F SEATING PLANE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H –Y– K G N L D J R 3 PL 0.25 (0.010) M B M Y http://onsemi.com 5 INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 BUT11AF Notes http://onsemi.com 6 BUT11AF Notes http://onsemi.com 7 BUT11AF SWITCHMODE a a registered trademark of Semiconductor Components INdustries, LLC (SCILLC) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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