C20G 2.0µm High Voltage CMOS/DMOS Process C20G Overview Double poly, two metal layers P-type epitaxy over p+ substrate Allows the integration of 5V CMOS with high voltage lateral DMOS and extended drain PMOS. Particularly cost effective for applications with a low digital gate count. Features Applications 5V mixed signal CMOS Fully enhanced with 5V on the Gate DMOS Blocking Voltages from 72V to >300V High Voltage PMOS 72V to 300V Isolated vertical NPN High Value (10k/sq) and Low TCR poly resistors Low specific RON Low mask count Double resurf technique allows wide range of breakdown voltage to be attained simply through layout variation BSIM3v3.22 models available in Spectre and HSPICE format Cadence Foundry Design Kit (FDK) available Safe Operating Area characterised for high voltage devices D M O S O n -Re sista n ce vs B re a kd o w n Voltag e Analog Capabilities Information Technology - Ink jet printers heads, Digital Mirror Displays, Computer peripherals, Display drivers, Printer, Plotter Biomedical - Electrokinetics, LOAC, µ-Fluidics, Bio-particles Sorting, Drug Delivery, Ultrasound imaging Telecom - DWDM, VOAs, OADMs, OXCs, Electro-optics, Mirrors, µ-coils, RF amplifier, Multiplexer, SLIC, Ring generator Automotive - Most Applications : Speed, Angles, Acceleration, Pressure, I-MEMS Industrial – AC-DC converter, Relays, Linear amplifier, Current regulator, HV generator S p e c i f ic O n -R e s i s ta n c e ( m Ω-c m 2 ) 5V CMOS integrated with high voltage lateral DMOS and extended drain PMOS— particularly cost effective for applications with a low digital gate count Double Poly Capacitor (C=0.75fF/sq µm) Four types of poly resistors including high value and low TCR Isolated 10V vertical npn (β = 75) 1 0 00 100 10 C2 0G Th e o r e tica l s ilico n lim it 1 0 .1 100 1 0 00 B V d ss (V ) Simplified Cross-Section of DMOS B 27-Sep-02 03-70-00149-00 www.dalsasemi.com S p+ n+ p -ba se p -e p ita xy G G D p -to p N -W e ll n+ p -to p p -b a se C20F 2.0µm 5/40V CMOS/DMOS Process DALSA Semiconductor • C20G High Voltage CMOS/DMOS Process 27-Sep-02 27-Sep-02 03-70-00149-00 03-70-00149-00 www.dalsasemi.com www.dalsasemi.com Electrical Parameters of Representative Transistors Parameter W x L (µm) VT (V) Ids (mA) Bvdss (V) Isub (µA/µm) RON (Ω) 5V NMOS 5V PMOS 200V DMOS 100V EDPMOS 50 X 2 50 X 2 120 X 0.8 148 X 3 0.7 -0.7 1.25 -0.7 7.5 3.75 16 8.7 15 14 225 135 0.15 - 0.27 - 220 630 380 1100 200V DMOS (L=0.8µm, W=120µm) 100V EDPMOS (L=3µm, W=148µm) For More Information DALSA Semiconductor 18 Blvd de l’aéroport Bromont Quebec Canada J2L 1S7 Tel : +01 800 718 9701 Fax : +01 450 534 3201 e-mail: [email protected] www.dalsasemi.com