ETC CM9

9 Micron Metal Gate
CMOS Process
Process parameters
Table 1:
Features
• Metal Gate Process
• 13 µm Metal Pitch
9 µm
Units
• 16 Volts Maximum Operating Voltage
Metal pitch (width/space)
8/5
µm
• Simple Process (7 masks)
Contact
8x8
µm
• Very Short Cycle Time
Gate geometry
9
µm
• Very High Yield
P-well junction depth
9
µm
Description
N+ junction depth
2.4
µm
P+ junction depth
2.6
µm
1050
Å
The 9 µm process is a CMOS process with an operating voltage
range from 5 to 16 volts. The gate material is metal; which is
common in many mature designs. An advantage of this process
is its simplicity and its short cycle time.
Gate oxide thickness
MOSFET Electrical Parameters
Resistances (Ω /sq.)
9 MICRON - 15 volts
Units
Vt (50 x 9 µm)
N Channel
min. typ. max.
min.
1.0
1.6
Ids (50 x 9 µm)
1.6
200
Gain β (50 x 9 µm)
Bvdss
1.3
20
28
P Channel
typ. max.
1.9
60
700
20
2.2
min.
V
saturation
µA/µm
Vds=Vgs=3v
Pwell
typ.
max.
1500
N+
35
45
55
P+
40
70
100
2
200
µA/V
30
V
Ids=1µA
Field threshold
23
20
V
Ids=1µA
L effective
5.2
4.8
µm
L drawn =
9µm
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9 MICRON -15 volts
Conditions
For More Information:
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Bromont, Québec, Canada
J2L 1S7
Metal I
0.038
Tel :
Fax
email:
(450) 534-2321 ext. 1448
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(450) 534-3201
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