ETC CMBTA92

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
CMBTA92
CMBTA93
SILICON EPITAXIAL TRANSISTORS
P–N–P transistor
Marking
CMBTA92 = 2D
CMBTA93 = 2E
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to Tamb = 25 °C
D.C. current gain
–IC = 10 mA; –VCE = 10 V
Transition frequency at f = 100 MHz
–IC = 10 mA; –VCE = 20 V
Collector–base capacitance at f = 1 MHz
IE = 0; –VCB = 20 V
Continental Device India Limited
Data Sheet
–V CBO
–V CEO
–V EBO
–IC
Ptot
CMBT A92
max. 300
max. 300
max.
max.
5
500
250
hFE
min.
40
fT
min.
50
C cb
max.
6
A93
200 V
200 V
V
mA
mW
MHz
8
pF
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CMBTA92
CMBTA93
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
–V CBO
–V CEO
–VEBO
–IC
Ptot
Tstg
Tj
THERMAL CHARACTERISTICS
Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb
Thermal resistance
from junction to ambient
Rth j–a
CMBT A92
max. 300
max. 300
max.
max.
max
–55
max.
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–V(BR)CEO min.
–IC = 1 mA; IB = 0
Collector–base breakdown voltage
–V(BR)CBO min.
–IC = 100 mA; IE = 0
Collector cut–off current
–I CBO
max.
–VCB = 200 V; IE = 0
–I CBO
max.
–VCB = 160 V; IE = 0
Emitter–base breakdown voltage
–V(BR)EBO min.
–IE = 100 mA; IC = 0
Emitter cut–off current
–I EBO
max.
IC = 0; –VBE = 3 V;
Collector–base capacitance at f= 1 MHz
Ccb
max.
IE = 0; –VCB = 20 V
Saturation voltages
–VCEsat
max.
–IC = 20 mA; –IB = 2 mA
–VBEsat
max.
–IC = 20 mA; –IB = 2 mA
D.C. current gain
hFE
min.
–IC = 1 mA; –VCE = 10 V
hFE
min.
–IC = 10 mA; –VCE = 10 V
hFE
min.
–IC = 30 mA; –VCE = 10 V
Continental Device India Limited
Data Sheet
A93
200 V
200 V
5
V
500
mA
250
mW
to +150
°C
150
°C
500
K/W
300
200 V
300
200 V
0.25
–
– mA
0.25 mA
5
0.1
V
0.1 mA
6
8
0.5
0.9
pF
0.5 V
0.9 V
25
40
25
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Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
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