ETC CMMT591

IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
IS / IECQC 700000
IS / IECQC 750100
An IS/ISO 9002 and IECQ Certified Manufacturer
SOT-23 Formed SMD Package
CMMT591
SILICON PLANAR EPITAXIAL TRANSISTORS
PNP transistor
Marking
CMMT = 591
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak Pulse current
Base current
Total power dissipation at Tamb = 25°C
Junction temperature
D.C. current gain
–IC = 500 mA; VCE = 5 V
Transition frequency at f = 100 MHz
IC = 50 mA; VCE = 10 V
Continental Device India Limited
Data Sheet
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tj
max.
max.
max.
max.
max.
max.
max.
max.
80
60
5
1
2
200
500
150
V
V
V
A
A
mA
mW
°C
hFE
min.
max.
100
300
fT
min.
150 MHz
Page 1 of 3
CMMT591
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak Pulse current
Base current
Total power dissipation at Tamb = 25°C
Storage temperature
Junction temperature
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
max.
max.
max.
max.
max.
max.
max.
-55 to
max.
80
60
5
1
2
200
500
+150
150
V
V
V
A
A
mA
mW
°C
°C
CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Collector cut-off current
IE = 0; VCB = 60 V
ICBO
VBE = 0; VCE = 60 V
ICES
max.
max.
100 nA
100 nA
Emitter cut-off current
VEB = 4 V; IC = 0
IEBO
max.
100 nA
Breakdown voltages
IC = 10 mA; IB = 0
IC = 100 µA; IE = 0
IE = 100 µA; IC = 0
VCEO
VCBO
VEBO
min.
min.
min.
60 V
80 V
5 V
Base-emitter voltage
IC = 1 A; VCE = 5 V
VBE*
max.
1 V
Saturation voltage
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 1 A; IB = 100 mA
VCEsat* max.
max.
VBEsat* max.
300 mV
600 mV
1.2 V
D.C. current gain
IC = 1 mA; VCE = 5 V
hFE
min.
100
IC = 500 mA; VCE = 5 V*
min.
max.
100
300
IC = 1 A; VCE = 5 V*
min.
80
IC = 2 A; VCE = 5 V*
min.
15
Collector capacitance at f = 1 MHz
IE = 0; VCB = 10 V
C ob
max.
10 pF
Transition frequency at f = 100 MHz
IC = 50 mA; VCE = 10 V
fT
min.
150 MHz
* Measured under pulsed conditions: Pulse width = 300 µs, duty cycle = 2%.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com
www.cdil.com
Continental Device India Limited
Data Sheet
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