LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming General Description Features The LM3434 is an adaptive constant on-time DC/DC buck (step-down) constant current controller (a true current source). The LM3434 provides a constant current for illuminating high power LEDs. The output configuration allows the anodes of multiple LEDs to be tied directly to the ground referenced chassis for maximum heat sink efficacy. The high frequency capable architecture allows the use of small external passive components and no output capacitor while maintaining low LED ripple current. Two control inputs are used to modulate LED brightness. An analog current control input is provided so the LM3434 can be adjusted to compensate for LED manufacturing variations and/or color temperature correction. The other input is a logic level PWM control of LED current. The PWM functions by shorting out the LED with a parallel switch allowing high PWM dimming frequencies. High frequency PWM dimming allows digital color temperature control, interference blanking, field sequential illumination, and brightness control. Additional features include thermal shutdown, VCC under-voltage lockout, and logic level shutdown mode. The LM3434 is available in a low profile LLP-24 package. ■ Operating input voltage range of -9V to -30V w.r.t. LED ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ anode Control inputs are referenced to the LED anode Output current greater than 6A Greater than 30kHz PWM frequency capable Negative output voltage capability allows LED anode to be tied directly to chassis for maximum heat sink efficacy No output capacitor required Up to 1MHz switching frequency Low IQ, 1mA typical Soft start Adaptive programmable ON time allows for constant ripple current LLP-24 package Applications ■ Projection systems ■ Solid state lighting ■ Automotive lighting Typical Application Circuit 30098931 © 2010 National Semiconductor Corporation 300989 www.national.com LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming March 29, 2010 LM3434 Connection Diagram Top View 30098904 24-Lead LLP NS Package Number SQA24A Ordering Information Order Number Spec. Package Type NSC Package Drawing Supplied As LM3434SQ NOPB LLP-24 SQA24A 1000 Units, Tape and Reel LM3434SQX NOPB LLP-24 SQA24A 4500 Units, Tape and Reel Pin Descriptions Pin Name Function TON On-time programming pin. Tie an external resistor (RON) from TON to CSN, and a capacitor (CON) from TON to VEE. This sets the nominal operating frequency when the LED is fully illuminated. 2 ADJ Analog LED current adjust. Tie to VIN for fixed 60mV average current sense resistor voltage. Tie to an external reference to adjust the average current sense resistor voltage (programmed output current). Refer to the "VSENSE vs. ADJ Voltage" graphs in the Typical Performance Characteristics section and the Design Procedure section of the datasheet. 3 EN Enable pin. Connect this pin to logic level HI or VIN for normal operation. Connect this pin to CGND for low current shutdown. EN is internally tied to VIN through a 100k resistor. 4 DIM Logic level input for LED PWM dimming. DIM is internally tied to CGND through a 100k resistor. 5 VIN Logic power input: Connect to positive voltage between +3.0V and +5.8V w.r.t. CGND. 6 CGND 7 VEE 8 COMP 9 NC No internal connection. Tie to VEE or leave open. 10 SS Soft Start pin. Tie a capacitor from SS to VEE to reduce input current ramp rate. Leave pin open if function is not used. The SS pin is pulled to VEE when the device is not enabled. 11 NC No internal connection. Tie to VEE or leave open. 12 NC No internal connection. Tie to VEE or leave open. 13 LS Low side FET gate drive return pin. 14 LO Low side FET gate drive output. Low in shutdown. 1 www.national.com Chassis ground connection. Negative voltage power input: Connect to voltage between –30V to –9V w.r.t. CGND. Compensation pin. Connect a capacitor between this pin and VEE. 2 Name Function 15 VCC Low side FET gate drive power bypass connection and boost diode anode connection. Tie a 2.2µF capacitor between VCC and VEE. 16 BST High side "synchronous" FET drive bootstrap rail. 17 HO High side "synchronous" FET gate drive output. Pulled to HS in shutdown. 18 HS Switching node and high side "synchronous" FET gate drive return. 19 DIMR LED dimming FET gate drive return. Tie to LED cathode. 20 DIMO LED dimming FET gate drive output. DIMO is a driver that switches between DIMR and BST2. 21 BST2 DIMO high side drive supply pin. Tie a 0.1µF between BST2 and CGND. 22 NC 23 CSN Current sense amplifier inverting input. Connect to current sense resistor negative terminal. 24 CSP Current sense amplifier non-inverting input. Connect to current sense resistor positive terminal. EP VEE Exposed Pad on the underside of the device. Connect this pad to a PC board plane connected to VEE. No internal connection. Tie to VEE or leave open. Block Diagram 30098903 3 www.national.com LM3434 Pin LM3434 BST2 to VEE Maximum Junction Temperature Power Dissipation(Note 3) ESD Susceptibility (Note 4) Human Body Model Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VIN, EN, DIM, ADJ to CGND COMP, SS to VEE BST to HS VCC to VEE CGND, DIMR, CSP, CSN, TON to VEE HS to VEE (Note 2) LS to VEE HO output DIMO to DIMR LO output -0.3V to +7V -0.3V to +7V -0.3V to +7V -0.3V to +7.5V -0.3V to 40V 150°C Internally Limited 2kV Operating Conditions Operating Junction Temperature Range (Note 5) Storage Temperature Input Voltage VIN w.r.t. CGND Input Voltage VEE w.r.t. CGND ADJ Input Voltage Range to CGND -0.3V to +33V -0.3V to +33V -0.3V to +0.3V HS-0.3V to BST+0.3V -0.3V to +7V LS-0.3V to VCC +0.3V −40°C to +125°C −65°C to +150°C 3.0V to 5.8V -9V to -30V 0V to VIN Electrical Characteristics Specifications in standard type face are for TJ = 25°C and those with boldface type apply over the full Operating Temperature Range ( TJ = −40°C to +125°C). Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TJ = +25ºC, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: VEE = -12.0V and VIN = +3.3V with respect to CGND. Symbol Parameter Conditions Min(Note 5) Typ(Note 6) Max(Note 5) Units SUPPLY CURRENT IINVEE IINVIN VEE Quiescent Current VIN Quiescent Current EN = CGND 142 EN = VIN, Not Switching 1.0 EN = VIN, Not Switching 450 EN = CGND 35 71 57 60 63 mV 15 16.67 18 V/V 250 µA mA µA OUTPUT CURRENT CONTROL VCS Current sense target voltage; VCS = VCSP – VCSN VADJ = VIN GADJ IADJ Gain = (VADJ-CGND)/ (VCNP-VCSN) VIN = 3.3V, VADJ = 0.5V or 1.5V w.r.t. CGND ICSN Isense Input Current VADJ = 1V w.r.t. CGND -50 VADJ = VIN 10 VADJ = VIN 60 VADJ = 1V w.r.t. CGND 1 ICSP Gm Isense Input Current CS to COMP Transconductance; Gm = ICOMP / (VCSP – VCSN - VADJ/ 16.67) µA µA 0.6 1.3 2.2 mS 230 287 334 mV 6.75 7.1 ON TIME CONTROL TONTH On time threshold VTON - VEE at terminate ON time event GATE DRIVE AND INTERNAL REGULATOR VCCOUT VCC output regulation w.r.t. VEE ICC = 0mA to 20mA VCCILIM VCC current limit VCC = VEE ROLH HO output low resistance I = 50mA source 2 ROHH HO output high resistance I = 50mA sink 3 ROLL LO output low resistance I = 50mA source 2 ROHL LO output high resistance I = 50mA sink 3 ROLP DIMO output low resistance I = 5mA source 20 ROHP DIMO output high resistance I = 5mA sink 30 6.3 -110 FUNCTIONAL CONTROL www.national.com 4 V mA Ω Ω Ω Parameter Conditions VINUVLO VIN undervoltage lockout VCCUVLO VCC - VEE undervoltage lockout On Threshold thresholds Off threshold VEN Enable pin pullup resistor VDIM DIM logic input threshold DIM pin pulldown resistor IADJ ADJ pin current ISS SS pin source current RSS SS pin pulldown resistance 1.4 V 6.0 6.6 7.0 4.9 5.4 5.8 1.6 0.6 100 DIM rising threshold w.r.t. CGND DIM falling threshold w.r.t. CGND RDIM Units With respect to CGND Enable threshold, with respect Device on w.r.t. CGND to CGND Device off w.r.t. CGND REN Min(Note 5) Typ(Note 6) Max(Note 5) V V kΩ 1.6 V 0.6 100 -1.0 kΩ 1.0 µA 10 µA EN = CGND 1.0 kΩ LO falling to HO rising dead time 26 HO falling to LO rising dead time 28 DIM rising to DIMO rising delay 96 175 DIM falling to DIMO falling delay 40 160 AC SPECIFICATIONS TDTD TPDIM LO and HO dead time DIM to DIMO propagation delay ns ns THERMAL SPECIFICATIONS TJLIM Junction temperature thermal limit 175 °C TJLIM(hyst) Thermal limit hysteresis 20 °C θJA LLP-24 package thermal resistance 39 °C/W JEDEC 4 layer board Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended to be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics. Note 2: The HS pin can go to -6V with respect to VEE for 30ns and +22V with respect to VEE for 50ns without sustaining damage. Note 3: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, θJA, and the ambient temperature, TA. The maximum allowable power dissipation at any ambient temperature is calculated using: PD (MAX) = (TJ(MAX) − TA)/ θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=175°C (typ.) and disengages at TJ=155°C (typ). Note 4: Human Body Model, applicable std. JESD22-A114-C. Note 5: All limits guaranteed at room temperature (standard typeface) and at temperature extremes (bold typeface). All room temperature limits are 100% production tested. All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. All limits are used to calculate Average Outgoing Quality Level (AOQL). Note 6: Typical numbers are at 25°C and represent the most likely norm. 5 www.national.com LM3434 Symbol LM3434 Typical Performance Characteristics Efficiency vs. LED Forward Voltage (VCGND-VEE = 9V) Efficiency vs. LED Forward Voltage (VCGND-VEE = 12V) 30098923 30098922 Efficiency vs. LED Forward Voltage (VCGND-VEE = 14V) VSENSE vs. VADJ (VIN = 3.3V) 30098918 30098921 VSENSE vs. VADJ (VIN = 5.0V) VSENSE vs. Temperature (ADJ = VIN) 30098924 30098919 www.national.com 6 Average LED Current vs. DIM Duty Cycle (30kHz dimming, ILED = 6A nominal) 30098920 30098925 Startup Waveform Shutdown Waveform 30098967 ILED = 6A nominal, VIN = 3.3V, VEE = -12V, VLED = 3V, SS = open Top trace: EN input, 2V/div, DC Middle trace: VEE input current, 2A/div, DC Bottom trace: ILED, 2A/div, DC T = 100µs/div 30098968 ILED = 6A nominal, VIN = 3.3V, VEE = -12V, VLED = 3V, SS = open Top trace: EN input, 2V/div, DC Middle trace: VEE input current, 2A/div, DC Bottom trace: ILED, 2A/div, DC T = 100µs/div 30kHz PWM Dimming Waveform Showing Inductor Ripple Current 30098966 ILED = 6A nominal, VIN = 3.3V, VEE = -12V Top trace: DIM input, 2V/div, DC Bottom trace: ILED, 2A/div, DC T = 10µs/div 7 www.national.com LM3434 VSENSE vs. Temperature (ADJ = 1.0V) LM3434 FIXED LED CURRENT The ADJ pin sets VSENSE. Tie ADJ to VIN to use a fixed 60mV internal reference for VSENSE. Select RSENSE to fix the LED current based on the following equation: Operation CURRENT REGULATOR OPERATION The LM3434 is a controller for a Continuous Conduction Buck Converter. Because of its buck topology and operation in the continuous mode, the output current is very well controlled. It only varies within a switching frequency cycle by the inductor ripple current. This ripple current is normally set at 10% of the DC current. Setting the ripple current lower than 10% is a useful tradeoff of inductor size for less LED light output ripple. Additional circuitry can be added to achieve any LED light ripple desired. The LED current is set by the voltage across a sense resistor. This sense voltage is nominally 60mV but can be programmed higher or lower by an external control voltage. The running frequency of the converter is programmed by an external RC network in conjunction with the LED's forward voltage. The frequency is nominally set around 200kHz to 500khz. Fast PWM control is available by shorting the output of the current source by a MOSFET in parallel with the LED. During the LED OFF time the running frequency is determined by the RC network and the parasitic resistance of the output circuit including the DIM FET RDSON. The LM3434 system has been evaluated to be a very accurate, high compliance current source. This is manifest in its high output impedance and accurate current control. The current is measured to vary less than 6mA out of 6A when transitioning from LED OFF (output shorted) to LED ON (output ~6V). ADJUSTABLE LED CURRENT When tied to an external voltage the ADJ pin sets VSENSE based on the following equation: When the reference on ADJ is adjustable, VSENSE and ILED can be adjusted within the linear range of the ADJ pin. This range has the following limitations: When VADJ is less than this linear range the VSENSE is guaranteed by design to be less than or equal to 0.3V/16.667. When VADJ is greater than this linear range and less than VIN - 1V, VSENSE is guaranteed by design to be less than or equal to VADJ/16.667. If VADJ is greater than VIN - 1V, VSENSE switches to 60mV. INPUT CAPACITOR SELECTION A low ESR ceramic capacitor is needed to bypass the MOSFETs. This capacitor is connected between the drain of the synchronous FET (CGND) and the source of the main switch (VEE). This capacitor prevents large voltage transients from appearing at the VEE pin of the LM3434. Use a 22µF value minimum with X5R or X7R dielectric. In addition to the FET bypass capacitors, additional bypass capacitors should be placed near the VEE and VIN pins and should be returned to CGND. The input capacitor must also be sized to handle the dimming frequency input ripple when the DIM function is used. This ripple may be as high as 85% of the nominal DC input current (at 50% duty cycle). When dimming this input capacitor should be selected to handle the input ripple current. PROTECTION The LM3434 has dedicated protection circuitry running during normal operation. The thermal shutdown circuitry turns off all power devices when the die temperature reaches excessive levels. The VCC undervoltage lockout (UVLO) comparator protects the power devices during power supply startup and shutdown to prevent operation at voltages less than the minimum operating input voltage. The VCC pin is short circuit protected to VEE. The LM3434 also features a shutdown mode which decreases the supply current to approximately 35µA. The ADJ, EN, and DIM pins are capable of sustaining up to +/-2mA. If the voltages on these pins will exceed either VIN or CGND by necessity or by a potential fault, an external resistor is recommended for protection. Size this resistor to limit pin current to under 2mA. A 10k resistor should be sufficient. This resistor may be used in any application for added protection without any impact on function or performance. RECOMMENDED OPERATING FREQUENCY AND ON TIME "TIMEON" CALCULATION Although the switching frequency can be set over a wide range, the following equation describes the recommended frequency selection given inexpensive magnetic materials available today: DESIGN PROCEDURE This section presents guidelines for selecting external components. SETTING LED CURRENT CONTROL LM3434 uses average current mode control to regulate the current delivered to the LED (ILED). An external current sense resistor (RSENSE) in series with the LED is used to convert ILED into a voltage that is sensed by the LM3434 at the CSP and CSN pins. CSP and CSN are the inputs to an error amplifier with a programmed input offset voltage (VSENSE). VSENSE is used to regulate I LED based on the following equation: www.national.com In the above equation A=1.2 for powdered iron core inductors and A=0.9 or less for ferrite core inductors. This difference takes into account the fact that ferrite cores generally become more lossy at higher frequencies. Given the switching frequency f calculated above, TIMEON can be calculated. If VLED is the forward voltage drop of the LED that is being driven, TIMEON can be calculated with the following equation: 8 BOOTSTRAP CAPACITORS The LM3434 uses two bootstrap capacitors and a bypass capacitor on VCC to generate the voltages needed to drive the external FETs. A 2.2µF ceramic capacitor or larger is recommended between the VCC and LS pins. A 0.47µF is recommended between the HS and BST pins. A 0.1µF is recommended between BST2 and CGND. INDUCTOR SELECTION The most critical inductor parameters are inductance, current rating, and DC resistance. To calculate the inductance, use the desired peak to peak LED ripple current (IRIPPLE), RON, and CON. A reasonable value for IRIPPLE is 10% of ILED. The inductor value is calculated using the following equation: SOFT-START CAPACITOR The LM3434 integrates circuitry that, when used in conjunction with the SS pin, will slow the current ramp on start-up. The SS pin is used to tailor the soft-start for a specific application. A capacitor value of 0.1µF on the SS pin will yield a 12mS soft start time. For most applications soft start is not needed. For all VLED and VEE voltages, IRIPPLE remains constant and is only dependent on the passive external components RON, CON, and L. The I2R loss caused by the DC resistance of the inductor is an important parameter affecting the efficiency. Lower DC resistance inductors are larger. A good tradeoff point between the efficiency and the core size is letting the inductor I2R loss equal 1% to 2% of the output power. The inductor should have a current rating greater than the peak current for the application. The peak current is ILED plus 1/2 IRIPPLE. ENABLE OPERATION The EN pin of the LM3434 is designed so that it may be controlled using a 1.6V or higher logic signal. If the enable function is not used, the EN pin may be tied to VIN or left open. This pin is pulled to VIN internally through a 100k pull up resistor. PWM DIM OPERATION The DIM pin of the LM3434 is designed so that it may be controlled using a 1.6V or higher logic signal. The PWM frequency easily accomodates more than 40kHz dimming and can be much faster if needed. If the PWM DIM pin is not used, tie it to CGND or leave it open. The DIM pin is tied to CGND internally through a 100k pull down resistor. POWER FET SELECTION FETs should be chosen so that the I2RDSON loss is less than 1% of the total output power. Analysis shows best efficiency with around 8mΩ of RDSON and 15nC of gate charge for a 6A application. All of the switching loss is in the main switch FET. An additional important parameter for the synchronous FET is reverse recovery charge (QRR). High QRR adversely affects the transient voltages seen by the IC. A low QRR FET should be used. LAYOUT CONSIDERATIONS The LM3434 is a high performance current driver so attention to layout details is critical to obtain maximum performance. The most important PCB board design consideration is minimizing the loop comprised by the main FET, synchronous FET, and their associated decoupling capacitor(s). Place the VCC bypass capacitor as near as possible to the LM3434. Place the PWM dimming/shunt FET as close to the LED as possible. A ground plane should be used for power distribution to the power FETs. Use a star ground between the LM3434 circuitry, the synchronous FET, and the decoupling capacitor(s). The EP contact on the underside of the package must be connected to VEE. The two lines connecting the sense resistor to CSN and CSP must be routed as a differential pair directly from the resistor. A Kelvin connection is recommended. It is good practice to route the DIMO/DIMR, HS/HO, and LO/LS lines as differential pairs. The most important PCB board design consideration is minimizing the loop comprised by the main FET, synchronous FET, and their associated decoupling capacitor(s). Optimally this loop should be orthogonal to the ground plane. DIM FET SELECTION Choose a DIM FET with the lowest RDSON for maximum efficieny and low input current draw during the DIM cycle. The output voltage during DIM will determine the switching frequency. A lower output voltage results in a lower switching frequency. If the lower frequency during DIM must be bound, choose a FET with a higher RDSON to force the switching frequency higher during the DIM cycle. Placement of the Parallel Dimming FET When using a FET in parallel with the LED for PWM dimming special consideration must be used for the location of the FET. The ideal placement of the FET is directly next to the LED. Any distance between this FET and the LED results in line inductance. Fast current changes through this inductance can induce large voltage spikes due to v = Ldi/dt. These can be mitigated by either reducing the distance between the FET 9 www.national.com LM3434 and the LED and/or slowing the PWM edges, and therefore the dt, by using some gate resistance on the FET. In cases where the dimming FET is not placed close to the LED and/ or very fast switching edges are desired the induced voltages can become great enough to damage the dimming FET and/ or the LM3434 HS pin. This can also result in a large spike of current into the LED when the FET is turned off. In these cases a snubber should be placed across the dimming FET to protect the device(s). TIMING COMPONENTS (RON and CON) Using the calculated value for TIMEON, the timing components RON and CON can be selected. CON should be large enough to dominate the parasitic capacitance of the TON pin. A good CON value for most applications is 1nF. Based on calculated TIMEON, CON, and the nominal VEE and VLED voltages, RON can be calculated based on the following equation: LM3434 Application Information 30098916 FIGURE 1. Up to 10A Output Application Circuit 30098917 FIGURE 2. Up to 20A Output Application Circuit www.national.com 10 Manufacturer Inductor Contact Information Coilcraft GA3252-AL series, SER1360 series, and SER2900 series www.coilcraft.com 800-322-2645 Coiltronics HCLP2 series www.coiltronics.com Pulse PB2020 series www.pulseeng.com Some Recommended Input/Bypass Capacitors (Others May Be Used) Manufacturer Capacitor Contact Information Vishay Sprague 293D, 592D, and 595D series tantalum www.vishay.com 407-324-4140 Taiyo Yuden High capacitance MLCC ceramic www.t-yuden.com 408-573-4150 Cornell Dubilier ESRD seriec Polymer Aluminum Electrolytic SPV and AFK series V-chip series www.cde.com MuRata High capacitance MLCC ceramic www.murata.com Some Recommended MOSFETs (Others May Be Used) Manufacturer MOSFET Contact Information Siliconix Si7386DP (Main FET, DIM FET) Si7668ADP (Synchronous FET) Si7790DP (Main FET, Synchronous FET, DIM FET) www.vishay.com/company/brands/ siliconix/ ON Semiconductor NTMFS4841NHT1G (Main FET, Synchronous FET, DIM FET) www.onsemi.com 11 www.national.com LM3434 Some Recommended Inductors (Others May Be Used) LM3434 Physical Dimensions inches (millimeters) unless otherwise noted LLP-24 Pin Package (SQA) For Ordering, Refer to Ordering Information Table NS Package Number SQA24A www.national.com 12 LM3434 Notes 13 www.national.com LM3434 Common Anode Capable High Brightness LED Driver with High Frequency Dimming Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: www.national.com Products Design Support Amplifiers www.national.com/amplifiers WEBENCH® Tools www.national.com/webench Audio www.national.com/audio App Notes www.national.com/appnotes Clock and Timing www.national.com/timing Reference Designs www.national.com/refdesigns Data Converters www.national.com/adc Samples www.national.com/samples Interface www.national.com/interface Eval Boards www.national.com/evalboards LVDS www.national.com/lvds Packaging www.national.com/packaging Power Management www.national.com/power Green Compliance www.national.com/quality/green Switching Regulators www.national.com/switchers Distributors www.national.com/contacts LDOs www.national.com/ldo Quality and Reliability www.national.com/quality LED Lighting www.national.com/led Feedback/Support www.national.com/feedback Voltage References www.national.com/vref Design Made Easy www.national.com/easy www.national.com/powerwise Applications & Markets www.national.com/solutions Mil/Aero www.national.com/milaero PowerWise® Solutions Serial Digital Interface (SDI) www.national.com/sdi Temperature Sensors www.national.com/tempsensors SolarMagic™ www.national.com/solarmagic PLL/VCO www.national.com/wireless www.national.com/training PowerWise® Design University THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. NATIONAL MAKES NO REPRESENTATIONS OR WARRANTIES WITH RESPECT TO THE ACCURACY OR COMPLETENESS OF THE CONTENTS OF THIS PUBLICATION AND RESERVES THE RIGHT TO MAKE CHANGES TO SPECIFICATIONS AND PRODUCT DESCRIPTIONS AT ANY TIME WITHOUT NOTICE. NO LICENSE, WHETHER EXPRESS, IMPLIED, ARISING BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. TESTING AND OTHER QUALITY CONTROLS ARE USED TO THE EXTENT NATIONAL DEEMS NECESSARY TO SUPPORT NATIONAL’S PRODUCT WARRANTY. EXCEPT WHERE MANDATED BY GOVERNMENT REQUIREMENTS, TESTING OF ALL PARAMETERS OF EACH PRODUCT IS NOT NECESSARILY PERFORMED. NATIONAL ASSUMES NO LIABILITY FOR APPLICATIONS ASSISTANCE OR BUYER PRODUCT DESIGN. BUYERS ARE RESPONSIBLE FOR THEIR PRODUCTS AND APPLICATIONS USING NATIONAL COMPONENTS. PRIOR TO USING OR DISTRIBUTING ANY PRODUCTS THAT INCLUDE NATIONAL COMPONENTS, BUYERS SHOULD PROVIDE ADEQUATE DESIGN, TESTING AND OPERATING SAFEGUARDS. EXCEPT AS PROVIDED IN NATIONAL’S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NATIONAL ASSUMES NO LIABILITY WHATSOEVER, AND NATIONAL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY RELATING TO THE SALE AND/OR USE OF NATIONAL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS PRIOR WRITTEN APPROVAL OF THE CHIEF EXECUTIVE OFFICER AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: Life support devices or systems are devices which (a) are intended for surgical implant into the body, or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness. National Semiconductor and the National Semiconductor logo are registered trademarks of National Semiconductor Corporation. All other brand or product names may be trademarks or registered trademarks of their respective holders. Copyright© 2010 National Semiconductor Corporation For the most current product information visit us at www.national.com National Semiconductor Americas Technical Support Center Email: [email protected] Tel: 1-800-272-9959 www.national.com National Semiconductor Europe Technical Support Center Email: [email protected] National Semiconductor Asia Pacific Technical Support Center Email: [email protected] National Semiconductor Japan Technical Support Center Email: [email protected]