ETC ERA34-10

ERA34 (0.1A)
( 1000V / 0.1A )
Outline drawings, mm
FAST RECOVERY DIODE
ø2.5
ø0.56
3.0
28 MIN.
28 MIN.
Features
Ultra small package, possible for 5mm pitch automatic
insertion
High voltage by mesa design
Marking
Color code : Green
High reliability
10
Applications
Voltage class
Lot No.
4
0
General purpose rectifier applications
Cathode mark
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
-10
Unit
1000
V
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
Resistive load (Ta=60°C)
0.1
A
Surge current
IFSM
Sine wave 10ms
2.0
A
Operating junction temperature
Tj
-40 to +140
°C
Storage temperature
Tstg
-40 to +140
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Max.
Unit
Forward voltage drop
VFM
IFM=0.1A
3
V
Reverse current
IRRM
VR=VRRM
50
µA
Reverse recovery time
t rr
IF=0.1A, IR=0.1A
0.15
µs
ERA34(0.1A)
(1000V / 0.1A )
Characteristics
Forward characteristics
Reverse characteristics
3
1.0
1
0.5
0.3
0.5
IF
[A]
IR
[µA]
0.1
0.05
0.03
0.1
0.05
0.01
0.03
0.005
0.003
0.01
0
1.0
2.0
0
3.0
200
400
600
VF [V]
800 1000 1200 1400
VR [V]
Junction capacitance characteristics
Current derating (IF(AV)-Ta)
0.14
30
0.12
0.10
10
Cj
[pF] 5
0.08
IF(AV)
[A] 0.06
3
0.04
0.02
0
1
0
20
40
60
80
100
120
140
10
30
50
100
200
VR [V]
Ta [°C]
Surge capability
3
1
IFSM
[A] 0.5
0.3
0.1
1
3
5
10
30
[time] (at 50Hz)
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com