ETC ERC20-08

ERC20 (5A)
( 200V to 800V / 5A )
FAST RECOVERY DIODE
Outline drawings, mm
4.5±0.2
Ø3.6+0.2
-0.1
1.32
1
15.0±0.2
6.4
2.7
10.0+0.5
-0
3.7
2
14.0+0-0.5
1.2
0.8±0.2
5.08
0.4+0.2
-0
2.7
Features
High voltage by mesa design
High reliability
JEDEC
TO-220AB
EIAJ
SC-46
Connection diagram
Applications
High speed switching
1
2
Maximum ratings and characteristics
Absolute maximum ratings
Item
Symbol
Conditions
Rating
-02
-04
-06
-08
Unit
Repetitive peak reverse voltage
VRRM
200 400 600 800
V
Non-repetitive peak reverse voltage
VRSM
250 450 650 850
V
Average output current
IO
Square wave, duty=1/2, Tc=125°C
5
A
Surge current
IFSM
Sine wave 10ms
70
A
Operating junction temperature
Tj
-40 to +150
°C
Storage temperature
Tstg
-40 to +150
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=5.0A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.1A
Thermal resistance
Rth(j-c)
Junction to case
Max.
-02
-04
-06
1.3
1.5
-08
Unit
V
50
µA
400
ns
3.0
°C/W
ERC20(5A)
(200V to 800V / 5A )
Characteristics
Forward characteristics
Reverse characteristics
30
100
50
IF
10
30
5
10
3
[A]
[µA]
1
1
0.5
0.3
0.5
0.3
0.1
5
3
IR
0.1
0.05
0.2 0.4
0.6
0.8
1.0
VF [V]
1.2
1.4
0.03
1.6
0
100
200
300
VR [V]
Forward power dissipation
Reverse characteristics
300
8
100
7
50
30
IR
10
[µA]
6
wF
5
[W]
5
3
4
3
1
0.5
2
0.3
1
0.1
0
200
300
400
500
600
700
0
800
0
1
2
3
4
5
6
7
8
IF(AV) [A]
VR [V]
Output current-case temperature
Junction capacitance characteristics
100
160
50
140
TC
[°C]
30
120
Cj
[pF]
100
10
80
5
60
50
3
0
1
2
3
IO [A]
4
5
6
30
50
100
300
VR [V]
500
1000
ERC20(5A)
(200V to 800V / 5A )
Surge capability
300
100
IFSM
[A]
50
30
10
1
3
5
10
30
[time] (at 50Hz)
Transient thermal impedance
101
[°C/W]
100
10-1
10-3
10-2
10-1
100
101
102
t [sec.]
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com