ESJA08 (8kV/5mA) Outline Drawings HIGH VOLTAGE DIODE ESJA08 is high reliability resin molded type high voltage diode in small size package which is sealed (a multilayed mesa type silicon chip) by epoxy resin. Cathode Mark Lot No. o 2.5 Features 27 min. Ultra high speed switching Low VF High surge resisitivity for CRT discharge High reliability design Ultra small pakage 6.5 o 0.5 27 min. Cathode Mark Type Mark Applications ESJA08-08 Rectification for CRT display monitor high voltage power supply (FBT:Flyback Transformer) Maximum Ratings and Characteristics Absolute Maximum Ratings Items Symbols Condition ESJA08 Units Repetitive Peak Reverse Voltage VRRM 8 kV Average Output Current IO 5 mA Surge Current IFSM Ta=25°C,Resistive Load 0.5 A Junction Temperature Tj 10mS Sine-half wave peak value Allowable Operation Case Temperature Tc Storage Temperature Tstg 120 °C 100 °C -40 to +120 °C ESJA08 Units V Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF IF=10mA 28 Maximum Reverse Current IR VR=VRRM 2 Maximum Reverse Recovery Time trr Junction Capacitance Cj Ta=25°C,IF=2mA,IR=4mA Ta=25°C,VR=0V,f=1MHz µA 0.05 µs 2 pF ESJA08 (8kV/5mA) Characteristics 28 1 24 o Tj=100 C 0.1 IF IR 20 Tj=100 o C Tj= 25 o C [ µ A] [mA] 16 0.01 12 o Tj= 25 C 1E-3 8 0 10 20 30 VF 0 40 2 4 6 [V] VR Forward Characteristics 8 10 12 [kV] Reverse Characteristics 1.0 100 o Tj= 25 C µ A I R =100 N=100pcs. o Tj=25 C f=1MHz 0.8 Cj 80 0.6 N [pF] [pcs.] 0.4 0.2 0.0 60 40 20 0 50 100 V Bias 150 200 [V] 0 0 4 8 12 V Junction Capacitance Characteristics 16 20 24 0.01µF Tj= 25 C N=100pcs. 100 D.U.T 150 kohm 1kohm 80 N 28 [kV] Avalanche Breakdown Voltage o 120 AV 60 100ohm OSCILLO SCOPE [pcs.] 40 20 IF=2mA 1mA 0 0 0.00 0.02 0.04 trr ( µ s) 0.06 0.08 0.10 IR=4mA Reverse Recovery Time trr Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com