ESJC13 (9kV/450mA,12kV/350mA ) Outline Drawings HIGH VOLTAGE DIODE Type Name, Lot No. ESJC13 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. (3) Cathode Mark Ø 7.5 (4) Ø 1.2 (2) (1) Features 32.5±2.5 22 30.5±2.5 No. Part name Material 1 Lead wire Ag plated Cu wire 2 Anode terminal and type name Flat quick-connect terminal CSS-66325-F (NITIFU TERMINAL INDUSTRIES Co.,LTD) or Equrvalent Low VF High Surge proof resistivity High reliability . 3 Cathode terminal Crimp-type terminal lugs for copper conductor 1.25-4M 4 Molding resin Epoxy resin UL94V-0 Cathode Mark Applications Type Rectification for Microwave oven high voltage power supply Mark ESJA13-09B ESJA13-12B Maximum Ratings and Characteristics Absolute Maximum Ratings Items * Symbols Repetitive Peak Reverse Voltage VRRM Average Forward Current Io Non-repetitive Peak Reverse Current IRSM Non-repetitive Peak Forward Current IFSM Allowable Junction Temperature Storage Temperature Range Conditions 50HzSine half-wave average value. Ta < = 60°C* ESJC13 Units -09B -12B 9 12 kV 450 350 mA Wp=1mS.Rectangular-wave. 100 One-shot.Ta=25°C 50HzSine half-wave peak value.One-shot.Ta=25°C mA 30 A Tj 130 °C Tg -40 to +130 °C Cooling Requiremennt:Cathode terminalb is fastened to radiatingfin That size is more than 50mm•~50mm•~0.6mmt Wind-cooled velocity is more than0.5m/s. Electrical Characteristics (Ta=25°C Unless otherwise specified ) Items Symbols Conditions Maximum Forward Voltage Drop VF IF=350mA Maximum Reverse Current IR VR=12kV Minimum Avalanche Breakdown Voltase Vz Iz=100µA ESJC13 -09B -12B 8 10 5 9.5 Units V µA 12.5 kV Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ESJC13 (9kV/450mA,12kV/350mA ) Characteristics 1 400 Tj=100 o C ESJC13-12B ESJC13-09B Tj=100 300 o Tj=25 C o C IR IF 0.1 ESJC13-12B 200 [mA] [ µ A] ESJC13-09B ESJC13-09B 100 Tj=25 0.01 0 0 3 6 9 12 0 15 o ESJC13-12B C 3 6 9 12 V R [kV] Reverse Characteristics V F [V] Forward Characteristics 100 100 20 ESJC13-09B o Tj=25 C N=20pcs. o Tj=25 C IR=100 µ A N=100pcs 80 80 10 60 60 N N 0 [pcs.] ESJC13-09B ESJC13-12B [pcs.] 20 40 40 ESJC13-12B 10 20 20 0 160 180 200 220 240 260 00 9 10 11 12 13 14 15 16 17 Avalanche Breakdown Voltage Reverse Surge Current 500 400 Io 300 ESJC13-09B [mA] ESJC13-12B 200 Cathode terminal is fastened to radiating fin that size is more than 50mmx50mmx0.6mm.Wind cooled velocity is more than 0.5m/S. 100 0 0 20 40 60 80 100 120 140 160 o Ta [C] Current Derating Curve Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com