FDD6690S 30V N-Channel PowerTrench SyncFET™ General Description Features The FDD6690S is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6690S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6690S as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6690A in parallel with a Schottky diode. • 40 A, 30 V Applications • High power and current handling capability RDS(ON) = 16 mΩ @ VGS = 10 V RDS(ON) = 24 mΩ @ VGS = 4.5 V • Includes SyncFET Schottky body diode • Low gate charge (17nC typical) • High performance trench technology for extremely low RDS(ON) • DC/DC converter . • Motor Drives D D G G S TO-252 S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current (Note 3) 40 A (Note 1a) 100 (Note 1) 50 (Note 1a) 2.8 – Continuous – Pulsed PD Power Dissipation (Note 1b) TJ, TSTG W 1.3 –55 to +150 °C (Note 1) 2.5 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6690S FDD6690S 13’’ 16mm 2500 units 2001 Fairchild Semiconductor Corporation FDD6690S Rev C (W) FDD6690S September 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID=14A 245 mJ 14 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C IGSSF Gate–Body Leakage, Forward VGS = 20 V, IGSSR Gate–Body Leakage, Reverse VGS = –20 V, On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VDS = 24 V, 30 V mV/°C 19 500 µA VDS = 0 V 100 nA VDS = 0 V –100 nA 2 –3.3 3 V mV/°C 10 15.5 16 16 24 26 mΩ VGS = 0 V (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C Static Drain–Source On–Resistance VGS = 10 V, ID = 10 A ID = 8 A VGS = 4.5 V, VGS= 10 V, ID = 10 A, TJ= 125°C ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 10 A VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1 60 A 27 S 2010 pF 526 pF 186 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 10 18 ns 10 18 ns td(off) Turn–Off Delay Time 34 55 ns tf Turn–Off Fall Time 14 23 ns Qg Total Gate Charge 17 24 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 10 V ID = 10 A, 6.2 nC 5.5 nC Drain–Source Diode Characteristics VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/µs (Note 2) (Note 2) (Note 3) 0.49 0.56 20 19.7 0.7 V nS nC FDD6690S Rev C (W) FDD6690S Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6690S Rev C (W) FDD6690S Electrical Characteristics FDD6690S Typical Characteristics 2.6 50 VGS = 10V 6.0V VGS = 4.0V 5.0V 40 2.2 4.5V 1.8 30 4.5V 5.0V 4.0V 1.4 20 6.0V 8.0V 1 10 10V 3.5V 0.6 0 0 1 2 0 3 10 20 Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 1.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) ID = 10A VGS = 10V ID = 5A 0.05 1.6 0.04 1.3 o 0.03 TA = 125 C 1 0.02 o 0.7 TA = 25 C 0.01 0.4 -50 -25 0 25 50 75 100 125 150 o 0 2 4 TJ, JUNCTION TEMPERATURE ( C) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 10 VGS = 0V VDS = 5V o TA = -55 C o 25 C 40 1 o o TA = 125 C 125 C o 30 25 C 0.1 o -55 C 20 0.01 10 0.001 0 1.5 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6690S Rev C (W) FDD6690S Typical Characteristics 10 2000 ID =10A VDS = 5V 8 f = 1MHz VGS = 0 V 10V 1600 15V CISS 6 1200 4 800 2 400 0 0 COSS CRSS 0 3 6 9 12 15 18 21 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 25 30 Figure 8. Capacitance Characteristics. 100 50 R DS(ON) LIM IT P(pk), PEAK TRANSIENT POWER (W) 100µs 1m s 10m s 10 100m s 1s 10s 1 DC V G S = 10V SINGLE PULSE o R θJA = 96 C/W 0.1 T A = 25 o C 0.01 0.1 1 10 100 SINGLE PULSE R θJA = 96°C/W T A = 25°C 40 30 20 10 0 0.001 0.01 0.1 V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t 1 , TIM E (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 t2 TJ - T A = P * R θJA(t) Duty Cycle, D = t1 / t2 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDD6690S Rev C (W) FDD6690S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6690S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 o 125 C 0.01 3A/DIV 0.001 o 25 C 0.0001 0.00001 0V 0 10 20 30 VDS, REVERSE VOLTAGE (V) Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. 10nS/DIV Figure 12. FDD6690S SyncFET body diode reverse recovery characteristic. 3A/DIV For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6690A). 0V 10nS/DIV Figure 13. Non-SyncFET (FDD6690A) body diode reverse recovery characteristic. FDD6690S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4