ETC HA2060R/HAT2060RJ

HAT2060R/HAT2060RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
ADE-208-936 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
•
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
“J” Is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
External View
SOP-8
8
5 6 7 8
D D D D
5
7 6
3
1 2
4
4
G
S S S
1 2 3
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
HAT2060R/HAT2060RJ
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
HAT2060R
HAT2060RJ
Unit
Drain to source voltage
VDSS
200
200
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
2
2
A
16
16
A
2
2
A
—
4
A
Drain peak current
I D (pulse)
Body-drain diode reverse drain
current
I DR
Avalanche current
I AP
Avalanche energy
Channel dissipation
Note4
EAR
Note4
Note1
—
0.266
mJ
Pch
Note2
2
2
W
Pch
Note3
3
3
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1.
2.
3.
4.
2
PW ≤ 10 µs, duty cycle ≤ 1%
1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
Value Tch = 25°C, Rg ≥ 50 Ω
HAT2060R/HAT2060RJ
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage V(BR)DSS
200
—
—
V
I D = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS
±20
—
—
V
I G = ±100 µA, VDS = 0
Zero gate voltage
HAT2060R
I DSS
—
—
1
µA
VDS = 200 V, VGS = 0
drain current
HAT2060RJ
I DSS
—
—
0.1
µA
Zero gate voltage
HAT2060R
I DSS
—
—
—
µA
VDS = 160 V, VGS = 0
drain current
HAT2060RJ
I DSS
—
—
10
µA
Ta = 125°C
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
Forward transfer admittance
|yfs|
2
3.2
—
S
I D = 1 A Note1, VDS = 10 V
Stataic drain to source on state
RDS(on)
—
410
450
mΩ
I D = 1 A Note1, VGS = 10 V
resistance
RDS(on)
—
450
550
mΩ
I D = 1 A Note1, VGS = 4 V
Input capacitance
Ciss
—
380
—
pF
VDS = 10 V, VGS = 0
Output capacitance
Coss
—
125
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
75
—
pF
Turn-on delay time
td(on)
—
10
—
ns
VGS = 10 V, ID = 1 A
Rise time
tr
—
17
—
ns
VDD ≅ 30 V
Turn-off delay time
td(off)
—
110
—
ns
Fall time
tf
—
45
—
ns
Body-ddrain diode forward voltage VDF
—
0.82
1.07
V
I F = 2 A, VGS = 0*1
Body-drain diode reverse recovery trr
time
—
95
—
ns
I F = 2 A, VGS = 0
diF/dt = 50 A/µs
Note:
1. Pulse test
3
HAT2060R/HAT2060RJ
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
Test conditions :
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm), PW < 10 s
3.0
ID (A)
30
10
Drain Current
Pch (W)
4.0
1
10 µs
10
3
Dr
er
n
Op
tio
ra
ive
pe
1
O
2.0
ive
Dr
Channel Dissipation
2
DC
1.0
0
50
at
ion
0.3
0.1
PW
Op
er
Operation in
this area is
limited by RDS(on)
1
s
=
10
ati
on
0µ
s
m
ms
(P No
W te
< 5
10
s)
0.03 Ta = 25°C
1 shot Pulse
0.01 1 Drive Operation
100
150
Ambient Temperature
200
0.3
1
3
10
30
100
Drain to Source Voltage
Ta (°C)
VDS (V)
Note 5:
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
Typical Output Characteristics
Typical Transfer Characteristics
5
5
10 V
Pulse Test
3
2
1
2.5 V
ID (A)
3.0 V
Drain Current
Drain Current
ID (A)
4V
4
4
V DS = 10 V
Pulse Test
3
2
1
Tc = 75°C
VGS = 2.0 V
0
4
2
4
6
8
10
Drain to Source Voltage VDS (V)
0
25°C
-25°C
1
2
3
Gate to Source Voltage
4
5
VGS (V)
HAT2060R/HAT2060RJ
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source Saturation Voltage
VDS(on) (V)
2
Pulse Test
1.6
1.2
ID=2A
0.8
1A
0.4
0.5 A
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
0.2
0.1
VGS = 4 V
0.05
10 V
0.02
Pulse Test
0.01
12
4
8
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
0.5 A
1A 2A
1.2
0.8
V GS = 4 V
2A
1A
0.5 A
0.4
0
-40
10 V
0
40
80
Case Temperature
0.1 0.2
16
20
VGS (V)
120
160
Tc (°C)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
5 10 20
0.5 1 2
Drain Current ID (A)
50
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = -25°C
10
25°C
5
75°C
2
V DS = 10 V
Pulse Test
1
0.5
0.1
0.3
1
3
Drain Current
10
30
100
ID (A)
5
HAT2060R/HAT2060RJ
Body -Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
5000
di / dt = 50 A / µs
V GS = 0, Ta = 25°C
500
2000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
200
100
50
1000
Ciss
500
200
Coss
100
50
20
10
0.1
10
0.3
1
3
10
Reverse Drain Current
30
0
100
IDR (A)
10
20
30
Drain to Source Voltage
Dynamic Input Characteristics
200
100
0
6
16
V GS
V DS
12
8
V DD = 150V
100V
80V
8
16
24
32
Gate Charge Qg (nc)
4
0
40
300
Switching Time t (ns)
300
V DD = 150 V
100 V
80 V
1000
VGS (V)
400
ID=2A
40
50
VDS (V)
Switching Characteristics
20
Gate to Source Voltage
Drain to Source Voltage
VDS (V)
500
Crss
VGS = 0
f = 1 MHz
20
t d(off)
100
tf
30
tr
10
3
1
0.1
t d(on)
V GS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1 %
0.3
1
3
10
30
Drain Current ID (A)
100
HAT2060R/HAT2060RJ
EAR (mJ)
Pulse Test
4
Repetive Avalanche Energy
Reverse Drain Current
IDR (A)
5
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current vs.
Source to Drain Voltage
3
2
V GS = 0, -5 V
10 V
1
0
5V
0.4
0.8
1.2
1.6
Source to Drain Voltage
0.5
I AP = 2 A
V DD = 50 V
L = 100 µH
duty < 0.1 %
Rg > 50 Ω
0.4
0.3
0.2
0.1
0
25
2.0
50
100
125
Channel Temperature
VSD (V)
Avalanche Test Circuit
150
Tch (°C)
Avalanche Waveform
EAR =
L
V DS
Monitor
75
1
2
• L • IAP •
2
VDSS
VDSS — VDD
I AP
Monitor
V (BR)DSS
I AP
Rg
V DS
VDD
D. U. T
ID
Vin
15 V
50Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
RL
Vin
Vout
Vin
10 V
50Ω
V DD
= 30 V
10%
10%
90%
td(on)
tr
10%
90%
td(off)
tf
7
HAT2060R/HAT2060RJ
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θ ch-f(t) = γ s (t) • θch - f
θ ch-f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.02
0.01
0.01
e
uls
p
ot
PDM
h
0.001
1s
D=
PW
T
PW
T
0.0001
10 µ
100 µ
1m
10 m
100 m
Pulse Width
1
10
100
1000
10000
PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
Normalized Transient Thermal Impedance γ s (t)
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θ ch-f(t) = γ s (t) • θch - f
θ ch-f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
0.02
0.01
0.01
e
uls
0.001
0.0001
10 µ
PDM
p
ot
h
1s
PW
T
PW
T
100 µ
1m
10 m
100 m
Pulse Width
8
D=
1
PW (S)
10
100
1000
10000
HAT2060R/HAT2060RJ
Package Dimensions
Unit: mm
2
4
0.15max.
1.27max.
0.4min.
5
6.2max.
5.8min.
4.0max.
3.8min.
8
0~8°
5.0max.
4.8min.
7
6
0.25max.
0.19min.
1.75max.
1.35min.
0.75max.
1.27typ.
3
0.51max.
0.33min.
0.15
0.25max.
0.10min.
Pin No. 1
0.25 M
Hitachi Code
JEDEC
EIAJ
FP-8DA
—
—
9
HAT2060R/HAT2060RJ
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
10