ETC HBFP-0420-TR3

High Performance Isolated
Collector Silicon Bipolar
Transistor
Technical Data
HBFP-0420
Features
• Ideal for High Gain, Low
Noise Applications
Description
Surface Mount Plastic
Package/ SOT-343 (SC-70) Agilent’s HBFP-0420 is a high
performance isolated collector
silicon bipolar junction transistor
housed in a 4-lead SC-70
(SOT-343) surface mount plastic
package.
Outline 4T
• Transition Frequency
fT = 25 GHz
• Typical Performance at
1.8 GHz
Associated Gain of 17 dB
and Noise Figure of 1.1 dB
at 2 V and 5 mA
• Can be Used Without
Impedance Matching
Pin Configuration
Base
Applications
• LNA, Oscillator, Driver
Amplifier, Buffer Amplifier,
and Down Converter for
Cellular and PCS Handsets
and Cordless Telephones
• Oscillator for TV Delivery
and TVRO Systems up to
10 GHz
Emitter
03x
P1dB of 12 dBm at 2 V and
20 mA
Emitter
Collector
Note:
Package marking provides orientation
and identification.
03 = Device code
x = Date code character. A new
character is assigned for each
month, year
HBFP-0420 provides an associated
gain of 17 dB, noise figure of
1.1 dB, and P1dB of 12 dBm at
1.8 GHz. Because of high gain and
low current characteristics,
HBFP-0420 is ideal for cellular/
PCS handsets as well as for
C-Band and Ku-Band
applications.
This product is based on a 25 GHz
transition frequency fabrication
process, which enables the
products to be used for high
performance, low noise applications at 900 MHz, 1.9 GHz,
2.4 GHz, and beyond.
2
HBFP-0420 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Units
Absolute
Maximum[1]
V
V
V
mA
mW
°C
°C
1.5
15.0
4.5
36
162
150
-65 to 150
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2]
Junction Temperature
Storage Temperature
Thermal Resistance:
θ jc = 300°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. PT limited by maximum ratings.
Electrical Specifications, TC = 25°C
Symbol
Parameters and Test Conditions
DC Characteristics
BVCEO Collector-Emitter Breakdown Voltage
I CBO
Collector-Cutoff Current
I EBO
Emitter-Base Cutoff Current
hFE
DC Current Gain
RF Characteristics
FMIN
Minimum Noise Figure
Ga
Associated Gain
IC = 1 mA, open base
Units
Min.
V
4.5
Max.
VCB = 5 V, IE = 0
nA
200
VEB = 1.5 V, IC = 0
µA
35
VCE = 2 V, IC = 5 mA
—
IC = 5 mA, VCE = 2 V, f = 1.8 GHz
dB
IC = 5 mA, VCE = 2 V, f = 1.8 GHz
dB
dB
|2
Insertion Power Gain
IC = 20 mA, VCE = 2 V, f = 1.8 GHz
P-1dB
Power Output @ 1 dB
Compression Point
IC = 20 mA, VCE = 2 V, f = 1.8 GHz dBm
|S 21
Typ.
50
15.5
80
150
1.1
1.4
17
17
12
3
HBFP-0420 Typical Scattering Parameters,
VCE = 2 V, IC = 5 mA, TC = 25°C
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.746
0.682
0.607
0.585
0.532
0.512
0.502
0.490
0.483
0.480
0.479
0.482
0.487
0.497
0.513
0.532
0.553
0.575
0.592
0.609
0.623
0.635
0.648
-11.9
-55.6
-90.1
-97.5
-128.3
-143.1
-151.6
-169.8
-174.6
161.4
149.2
137.6
126.5
115.4
105.0
94.6
84.0
74.5
66.0
58.2
50.7
43.0
34.5
23.4
21.9
19.9
19.3
16.8
15.5
14.7
12.9
11.6
10.3
9.3
8.4
7.6
6.9
6.2
5.6
5.0
4.4
3.9
3.3
2.9
2.4
1.9
14.853
12.473
9.909
9.181
6.918
5.952
5.453
4.422
3.786
3.286
2.908
2.629
2.389
2.205
2.040
1.902
1.778
1.662
1.559
1.469
1.393
1.312
1.248
171.0
139.8
116.8
112.2
93.1
83.4
78.4
65.8
55.2
45.2
35.7
26.5
17.4
8.3
-0.8
-9.8
-18.7
-27.5
-36.1
-44.4
-52.6
-60.8
-69.1
-41.4
-28.5
-25.0
-24.5
-22.9
-22.3
-21.9
-21.2
-20.5
-19.8
-19.2
-18.5
-17.9
-17.3
-16.8
-16.3
-15.8
-15.3
-14.9
-14.6
-14.2
-13.9
-13.6
0.009
0.038
0.056
0.059
0.072
0.077
0.080
0.088
0.095
0.102
0.110
0.118
0.127
0.136
0.145
0.153
0.162
0.171
0.179
0.186
0.195
0.202
0.209
84.8
63.6
49.3
46.9
37.2
33.2
31.2
26.9
23.4
19.8
16.3
12.5
8.1
3.5
-1.5
-7.1
-12.6
-18.2
-24.0
-29.8
-35.4
-41.6
-48.0
0.985
0.861
0.696
0.661
0.516
0.450
0.419
0.359
0.314
0.286
0.266
0.248
0.233
0.209
0.189
0.161
0.134
0.115
0.110
0.113
0.120
0.127
0.130
-6.6
-29.4
-46.6
-49.3
-62.2
-67.7
-71.6
-78.4
-86.3
-92.5
-98.1
-104.1
-110.5
-117.9
-126.4
-137.1
-152.0
-171.2
167.1
147.2
130.6
118.0
103.9
HBFP-0420 Noise Parameters: VCE = 2 V, IC = 5 mA
Γopt
Freq.
Fmin
GHz
dB
Mag
1.00
1.02
1.10
1.14
1.18
1.25
1.32
1.39
1.49
1.58
1.63
1.75
1.88
1.94
2.05
2.15
2.23
2.47
2.59
2.63
2.74
0.281
0.266
0.187
0.175
0.154
0.184
0.226
0.254
0.292
0.312
0.355
0.375
0.416
0.453
0.486
0.506
0.532
0.556
0.589
0.610
0.624
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
RN
Ga
Ang
Ω
dB
28.8
36.6
68.3
94.1
118.4
146.5
165.9
-176.8
-162.3
-147.3
-135.5
-121.0
-108.5
-98.1
-84.4
-74.8
-65.0
-56.8
-48.4
-40.4
-31.0
9.6
9.2
7.6
6.8
6.1
5.4
5.0
4.9
5.0
6.0
6.8
9.3
12.3
15.8
21.4
26.8
33.6
41.7
50.4
58.2
68.3
22.19
21.39
18.30
16.92
16.21
14.34
13.00
11.79
10.79
9.95
9.22
8.55
7.99
7.47
6.99
6.49
6.04
5.65
5.32
4.91
4.56
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
4
HBFP-0420 Typical Scattering Parameters,
VCE = 2 V, IC = 15 mA, TC = 25°C
S21
S11
S12
S22
Freq.
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.481
0.437
0.416
0.414
0.415
0.418
0.421
0.428
0.435
0.439
0.442
0.447
0.455
0.467
0.484
0.504
0.527
0.552
0.572
0.590
0.604
0.616
0.630
-22.1
-91.4
-131.0
-138.0
-163.4
-174.6
178.9
165.4
153.6
143.2
133.3
123.7
114.1
104.6
95.5
86.0
76.7
68.0
60.4
53.3
46.4
39.2
31.4
29.1
26.0
22.6
21.9
18.7
17.2
16.3
14.4
12.9
11.6
10.5
9.6
8.8
8.0
7.3
6.7
6.1
5.5
4.9
4.4
3.9
3.4
3.0
28.438
19.969
13.526
12.378
8.619
7.254
6.549
5.262
4.418
3.811
3.362
3.024
2.749
2.522
2.327
2.163
2.014
1.880
1.765
1.658
1.565
1.484
1.406
166.1
124.7
101.9
97.8
81.9
74.2
69.7
59.3
49.9
41.0
32.4
23.9
15.4
6.8
-1.8
-10.4
-18.9
-27.4
-35.5
-43.6
-51.6
-59.6
-67.7
-43.0
-31.2
-28.2
-27.7
-25.5
-24.4
-23.7
-22.3
-21.0
-19.9
-18.9
-18.1
-17.3
-16.6
-16.0
-15.4
-14.9
-14.5
-14.1
-13.8
-13.4
-13.1
-12.9
0.007
0.027
0.039
0.041
0.053
0.060
0.065
0.077
0.089
0.101
0.113
0.125
0.137
0.148
0.159
0.169
0.179
0.188
0.197
0.205
0.213
0.221
0.228
82.3
60.7
53.4
52.9
49.6
47.9
46.6
42.9
38.8
34.1
29.0
23.7
17.9
11.8
5.4
-1.0
-7.6
-14.3
-20.6
-27.1
-33.6
-40.3
-47.2
0.959
0.702
0.500
0.465
0.341
0.292
0.269
0.226
0.196
0.177
0.163
0.152
0.138
0.120
0.100
0.077
0.059
0.060
0.077
0.096
0.112
0.123
0.134
-10.5
-41.4
-57.2
-59.6
-69.8
-74.4
-77.6
-84.1
-91.1
-96.8
-102.1
-107.2
-113.4
-121.1
-131.4
-148.2
-178.2
144.1
116.6
100.7
89.0
77.9
66.5
HBFP-0420 Noise Parameters: VCE = 2 V, IC = 15 mA
Γopt
Freq.
Fmin
GHz
dB
Mag
0.9
1.0
1.5
1.8
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
1.57
1.58
1.63
1.67
1.74
1.72
1.76
1.84
1.89
1.97
2.03
2.15
2.28
2.36
2.42
2.54
2.65
2.83
2.96
3.10
3.14
0.033
0.054
0.169
0.252
0.234
0.306
0.343
0.365
0.383
0.407
0.431
0.463
0.483
0.513
0.538
0.560
0.581
0.602
0.621
0.640
0.653
RN
Ga
Ang
Ω
dB
-135.5
-151.8
-155.2
-148.1
-158.3
-149.2
-142.2
-133.5
-124.4
-115.6
-106.3
-96.8
-87.3
-77.3
-67.8
-59.2
-51.4
-44.6
-37.2
-29.9
-21.8
8.0
7.8
6.7
6.3
6.4
6.1
6.5
7.7
9.4
11.5
14.1
17.8
22.9
28.7
35.5
43.0
51.7
61.3
71.0
81.1
90.5
23.88
23.04
19.79
18.34
17.52
15.71
14.24
12.97
11.89
11.01
10.22
9.53
8.89
8.32
7.79
7.30
6.85
6.42
5.99
5.61
5.23
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.
5
HBFP-0420 Typical Performance
20
15
10
30
3
2
2 mA
5 mA
10 mA
15 mA
1
5
0
0
2
4
6
8
10
2
0
FREQUENCY (GHz)
ASSOCIATED GAIN (dB)
2.50
2.00
1.50
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0.50
0
5
10
15
15
10
20
COLLECTOR CURRENT (mA)
Figure 4. Noise Figure vs. Collector
Current and Frequency at 2 V.
10
20
15
25
Figure 3. Associated Gain vs.
Collector Current and Frequency
at 2 V.
2.5
0.9 GHz
20
1.8 GHz
2.5 GHz
15
3 GHz
4 GHz
5 GHz
10
6 GHz
5
2.0
1.5
1.0
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
0.5
0
0
25
5
0
COLLECTOR CURRENT (mA)
25
1.00
20
0
10
Figure 2. Noise Figure vs.
Frequency and Collector Current at
2 V.
3.00
NOISE FIGURE (dB)
8
6
0.9 GHz
1.8 GHz
2.5 GHz
3 GHz
4 GHz
5 GHz
6 GHz
FREQUENCY (GHz)
Figure 1. Associated Gain vs.
Frequency and Collector Current
at 2 V.
0
4
25
5
NOISE FIGURE (dB)
0
ASSOCIATED GAIN (dB)
4
2 mA
5 mA
10 mA
15 mA
NOISE FIGURE (dB)
ASSOCIATED GAIN (dB)
25
0
1
2
3
4
5
6
VOLTAGE (V)
Figure 5. Associated Gain vs. Voltage
(VCE) at 5 mA.
0
1
2
3
4
5
6
VOLTAGE (V)
Figure 6. Noise Figure vs. Voltage
(VCE) at 5 mA.
6
HBFP-0420 Die Model and PSPICE Parameters
C
XX
CMP9
R
CMP10
DIODEMODELFORM
R =12 OH
# DIODE MODEL #
CMP5
C
MODEL = DBC
IS=I.40507E-17
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
C = 19E-3 pF
CMP2
DIODE
AREA=
REGION=
MODEL = DBC
TEMP=
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
AREA=
REGION=
MODEL=DCS
TEMP=
XX
CMP7
R
B
CMP3
DIODE
CMP1
NPNBJTSUBST
RS=
CJO=2.393E-14
TT=
EG=
VJ=0.729
M=0.44
N=1
FC=0.8
R=7.78 OH
C =7E-3 pF
CMP6
C
CMP16
DIODE
TEMP=
MODEL=DBE
REGION=
AREA=
CMP8
R
AREA=3
REGION=
MODEL=BJTMODEL
R=.194 OH
CMP12
DIODEMODELFORM
# DIODE MODEL #
MODEL = DCS
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
RS=2.17347E2
CJO=8.974E-14
TT=
EG=
VJ=0.6
M=0.42
N=
FC=0.8
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
CMP69
R
CMP11
DIODEMODELFORM
XX R=1 OH
E
CMP68
BITMODELFORM
# BJT MODEL #
NPN=yes
PNP=
MODEL = BJTMODEL
Forward
Reverse
BF=1E6
BR=1
IKF=1.4737E-1 IKR=1.1E-2
ISE=7.094E-20 ISC=
NE=1.006
NC=2
VAF=4.4E1
VAR=3.37
NF=1
NR=1.005
TF=5.3706E-12 TR=4E-9
XTF=20
VTF=0.8
ITF=2.21805486E-1
PTF=0
XTB=0.7
APPROXOB=yes
Diode and junction
EG=1.17 CJC=2.7056E-14
IS=4.4746E-18 VJC=.6775
IMAX=
MJC=0.3319
XTI=3 XCJC=4.39790997E-1
TNOM=21
FC=0.8
Substrate
IS5=
NS=
Noise
Parasitics
RB=9.30144818 KF=
IRB=3.029562E-6 AF=
KB=
RBM=.1
AB=
RE=
RC=
FB=
# DIODE MODEL #
MODEL = DCE
IS=IE-24
BV=
IBV=
IMAX=
XTI=
TNOM=21
KF=
AF=
RS=
CJO=2.593E-14
TT=
EG=
VJ=0.8971
M=2.292E-1
N=1.0029
FC=0.8
ISR=
NR=
IKF=
NBV=
IBVL=
NBVL=
FFE=
CJE=7.474248E-14
VJE=0.9907
MJE=0.5063
CJS=
VJS=
MJS=
This model can be used as a design tool. It has been tested on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured data in this data sheet.
Note: The value of beta was high (BF = 1E6) to compensate for the fact that diode DBE reduces the current going into the
base (current flows through DBE). The diodes are necessary to model the non-linear effects.
7
SOT343 Package Model
C = 0.05 pF
CCBC
C
LLB
L
LT1
L
L = 0.22 nH
LLI
L
L = 0.7 nH
L = 0.2 nH
C = 0.08 pF
C2T1
C C = 0.05 pF
AGROUND
BASE
C1T1
C
AGROUND
COLLECTOR
EMITTER
CMP44
L
LT3
L
LL3
L
L = 0.7 nH
L = 0.5 nH
L = 0.2 nH
C1T3
C
CCEB
C
LL2
L
L = 0.2 nH
C = 0.01 pF
C = 0.1 pF
C = 0.1 pF
AGROUND
C1T2
C
L = 0.1 nH
LT2
L
C = 0.04 pF
AGROUND
C2T2
C
L = 0.15 nH
LLE
L
AGROUND
C = 0.144 pF
CCEC
C
AGROUND
C = 0.04 pF
C2T3
C
AGROUND
8
Part Number Ordering Information
Part Number
Devices per Reel
Container
Tape Orientation
100
3000
10,000
3000
antistatic bag
7" Reel
13" Reel
7" Reel
none
standard
standard
reverse
HBFP-0420-BLK
HBFP-0420-TR1
HBFP-0420-TR2
HBFP-0420-TR3
Package Dimensions
SOT-343 (SC-70 4 Lead)
1.30 (0.051)
BSC
1.30 (.051) REF
2.60 (.102)
E
1.30 (.051)
E1
0.85 (.033)
0.55 (.021) TYP
1.15 (.045) BSC
e
1.15 (.045) REF
D
h
A
b TYP
A1
L
θ
DIMENSIONS
SYMBOL
A
A1
b
C
D
E
e
h
E1
L
θ
MAX.
MIN.
1.00 (0.039)
0.80 (0.031)
0.10 (0.004)
0 (0)
0.35 (0.014)
0.25 (0.010)
0.20 (0.008)
0.10 (0.004)
2.10 (0.083)
1.90 (0.075)
2.20 (0.087)
2.00 (0.079)
0.65 (0.025)
0.55 (0.022)
0.450 TYP (0.018)
1.35 (0.053)
1.15 (0.045)
0.35 (0.014)
0.10 (0.004)
10
0
DIMENSIONS ARE IN MILLIMETERS (INCHES)
C TYP
9
Device Orientation
TR1, TR2 TOP VIEW
4 mm
REEL
8 mm
03x
03x
03x
END VIEW
03x
CARRIER
TAPE
USER
FEED
DIRECTION
TR3 TOP VIEW
4 mm
END VIEW
COVER TAPE
03x
03x
03x
8 mm
03x
Tape Dimensions
For Outline 4T
P
P2
D
P0
E
F
W
D1
t1 (CARRIER TAPE THICKNESS)
K0
8° MAX.
A0
DESCRIPTION
5° MAX.
B0
SYMBOL
SIZE (mm)
SIZE (INCHES)
CAVITY
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A0
B0
K0
P
D1
2.24 ± 0.10
2.34 ± 0.10
1.22 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.088 ± 0.004
0.092 ± 0.004
0.048 ± 0.004
0.157 ± 0.004
0.039 + 0.010
PERFORATION
DIAMETER
PITCH
POSITION
D
P0
E
1.55 ± 0.05
4.00 ± 0.10
1.75 ± 0.10
0.061 ± 0.002
0.157 ± 0.004
0.069 ± 0.004
CARRIER TAPE
WIDTH
THICKNESS
W
t1
8.00 ± 0.30
0.255 ± 0.013
0.315 ± 0.012
0.010 ± 0.0005
DISTANCE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
F
3.50 ± 0.05
0.138 ± 0.002
CAVITY TO PERFORATION
(LENGTH DIRECTION)
P2
2.00 ± 0.05
0.079 ± 0.002
www.semiconductor.agilent.com
Data subject to change.
Copyright © 2000 Agilent Technologies, Inc.
Obsoletes 5968-5433E
5988-0132EN (9/00)