APT47N65BC3
600V 47A 0.070Ω
Super Junction MOSFET
TO
COOLMOS
-24
7
Power Semiconductors
D3
• Ultra low RDS(ON)
• Increased Power Dissipation
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-247 or Surface Mount D3PAK Package
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
Parameter
APT47N65BC3
UNIT
650
Volts
Drain-Source Voltage
47
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
3.33
W/°C
VGSM
PD
TJ,TSTG
TL
dv
/dt
141
Operating and Storage Junction Temperature Range
7
EAR
Repetitive Avalanche Energy
7
Single Pulse Avalanche Energy
°C
260
Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C)
Repetitive Avalanche Current
EAS
-55 to 150
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Volts
50
V/ns
20
Amps
1
4
mJ
1800
STATIC ELECTRICAL CHARACTERISTICS
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance
2
TYP
650
(VGS = 10V, ID = 30A)
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
UNIT
Volts
0.06
0.07
0.5
25
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TJ = 150°C)
Ohms
μA
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.7mA)
MAX
2.10
3
±100
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
Microsemi Website - http://www.microsemi.com
050-7202 Rev A 3-2009
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT47N65BC3
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
3
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
f = 1 MHz
210
VGS = 10V
260
VDD = 300V
29
RG = 1.8Ω
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
8
INDUCTIVE SWITCHING @ 25°C
6
670
VDD = 400V, VGS = 15V
6
ns
110
ID = 47A @ 125°C
Turn-on Switching Energy
nC
27
VDD = 380V
Eon
pF
18
VGS = 13V
Fall Time
UNIT
110
RESISTIVE SWITCHING
Turn-off Delay Time
tf
2565
ID = 47A @ 25°C
Rise Time
MAX
7015
VGS = 0V
Gate-Source Charge
td(off)
TYP
VDS = 25V
Qgs
tr
MIN
ID = 47A, RG = 5Ω
980
INDUCTIVE SWITCHING @ 125°C
1100
VDD = 400V VGS = 15V
μJ
1200
ID = 47A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
2
(Body Diode)
141
(VGS = 0V, IS = - 47A)
1.2
t rr
Reverse Recovery Time (IS = -47A, dl S/dt = 100A/μs, VR = 350V)
Q rr
Reverse Recovery Charge (IS = -47A, dl S/dt = 100A/μs, VR = 350V)
/dt
Peak Diode Recovery
dv
/dt
MAX
47
Continuous Source Current (Body Diode)
1
dv
TYP
580
UNIT
Amps
Volts
ns
μC
23
5
6
V/ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.30
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.25
0.7
0.20
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7202 Rev A 3-2009
0.9
0.15
0.3
0.10
SINGLE PULSE
0.05
0.1
10
-5
t1
t2
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
0
10-4
°C/W
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS = -ID47A , di/dt = 700A/μs VR = VDSS, TJ = 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT47N65BC3
180
.1426
0.345
0.00375
.0084
Power
(watts)
.1566
0.455
.1333
0.101
Case temperature
160
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
VGS =15 & 10V
6.5V
140
6V
120
100
5.5V
80
60
5V
40
4.5V
20
4V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
60
TJ = -55°C
TJ = +25°C
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
NORMALIZED TO
V
GS
1.30
= 10V @ 23.5A
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
10 20 30 40 50 60 70 80 90
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
30
20
10
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
I = 47A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2009
2.5
050-7202 Rev A
ID, DRAIN CURRENT (AMPERES)
40
0
25
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
1.15
50
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
100
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
120
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Typical Performance Curves
50
100μS
10
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
1,000
Coss
100
Crss
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I = 47A
D
12
VDS= 120V
8
10,000
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
C, CAPACITANCE (pF)
100
APT47N65BC3
30,000
OPERATION HERE
LIMITED BY R
(ON)
DS
VDS= 300V
VDS= 480V
4
0
0
50 100 150 200 250 300 350 400
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
188
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
120
350
V
DD
250
V
DD
R
200
G
100
0
10
20
30
40 50 60
70 80
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
0
10
2000
G
V
= 400V
Eoff
= 5W
T = 125°C
J
L = 100μH
EON includes
diode reverse recovery.
1500
1000
500
Eon
0
10
SWITCHING ENERGY (mJ)
DD
SWITCHING ENERGY (mJ)
tr
40
20
30
4500
R
3-2009
60
0
40 50 60 70 80
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
050-7202 Rev A
tf
T = 125°C
J
L = 100μH
td(on)
2500
0
= 400V
= 5W
20
50
0
G
80
= 400V
= 5W
T = 125°C
J
L = 100μH
150
R
100
td(off)
tr and tf (ns)
td(on) and td(off) (ns)
300
DD
= 400V
4000
I = 47A
3500
T = 125°C
J
L = 100μH
Eoff
D
EON includes
3000
diode reverse recovery.
2500
2000
1500
Eon
1000
500
20
30
40 50 60 70 80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
10%
APT47N65BC3
90%
Gate Voltage
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
Collector Current
tr
Collector Current
90%
5%
10%
tf
90%
5%
0
Collector Voltage
Switching Energy
Collector Voltage
Switching Energy
10%
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7202 Rev A
2.21 (.087)
2.59 (.102)
3-2009
Source