ETC HVB190S

HVB190S
Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
ADE-208-1597 (Z)
Rev.0
Oct. 2002
Features
• Low capacitance. (C = 0.35 pF max)
• Low forward resistance. (rf = 3.0 Ω typ)
• CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No.
Laser Mark
Package Code
HVB190S
H9
CMPAK
Pin Arrangement
3
2
1
(Top View)
1. Cathode
2. Anode
3. Cathode
Anode
HVB190S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
1
Power dissipation
Pd *
100
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Note:
1. Two device total.
Electrical Characteristics *1
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage
VF


1.0
V
IF = 50 mA
Reverse current
IR


100
nA
VR = 50 V
Capacitance
C


0.35
pF
VR = 50 V, f = 1 MHz
rf

3.0
5.0
Ω
IF = 10 mA, f = 100 MHz

200


V
C = 200 pF, Both forward and reverse
direction 1 pulse
Forward resistance
2
ESD-Capability *
Notes: 1. Per one device.
2. Failure criterion ; IR ≥ 200 nA at VR = 50 V
Rev.0, Oct. 2002, page 2 of 5
HVB190S
Main Characteristic
10-7
10-1
10-8
Reverse current IR (A)
Forward current IF (A)
10-3
10-5
10-7
10-9
10-10
10-11
10-12
10-9
10-13
10-11
0
0.2
0.4
0.6
0.8
1.0
10-14
0
10
20
30
50
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current vs. Forward voltage
Fig.2 Reverse current vs. Reverse voltage
104
10
f=1MHz
f = 100MHz
Forward resistance rf (Ω)
Capacitance C (pF)
40
1.0
0.1
0.01
0.1
1.0
10
100
103
102
10
1.0 -4
10
10-3
10-2
10-1
Reverse voltage VR (V)
Forward current IF (A)
Fig.3 Capacitance vs. Reverse voltage
Fig.4 Forward resistance vs. Forward current
Rev.0, Oct. 2002, page 3 of 5
HVB190S
Package Dimensions
As of July, 2002
0.1
0.3 +– 0.05
(0.65) (0.65)
(0.2)
1.3 ± 0.2
0.9 ± 0.1
0.1
0.3 +– 0.05
+ 0.1
0.16 – 0.06
2.1 ± 0.3
0.1
0.3 +– 0.05
(0.425) 1.25 ± 0.1
2.0 ± 0.2
(0.425)
Unit: mm
0 – 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.0, Oct. 2002, page 4 of 5
CMPAK
—
Conforms
0.006 g
HVB190S
Disclaimer
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 7.0
Rev.0, Oct. 2002, page 5 of 5