IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Features • 1805-1880 MHz operation for DCS applications • Single 2.8 V, low current power requirement Applications • DCS portable transceivers Figure 1. IBM43RCLNA1116 Low Noise Amplifier • Selectable gain: 0dB, 19dB, or 25dB RF IN 1 8 PG2 GND 2 7 PG1 VCC 3 6 GND • 40dB reverse isolation at all gain settings • Less than 20µA current drain in standby mode • Compact MSOP-8L exposed paddle package MSOP-8L Package 3.0x3.0 mm. • High IIP3 and low noise to meet demanding system requirements Description The IBM43RCLNA1116 is a gain-controlled low-noise amplifier (LNA) implemented using IBM Microelectronics Silicon Germanium (SiGe) technology. The LNA is designed for low power consumption and uses a 2.8 volt power supply. It is optimized for DCS applications that require amplifiers with very high reverse isolation such as direct conversion where the LNA is more susceptible to local oscillator leakage. The IBM43RCLNA1116 is programmable for three levels of gain, and it has a very low power standby mode. The inputs for gain control and standby mode are 3V CMOS compatible. External capacitors in series with the input and output are required for DC blocking and as part of the impedance matching networks. A series inductor on the input and a shunt inductor on the output are also part of the matching April 03, 2002 5 RF OUT STANDBY 4 network. Proper selection of these components ensures optimized LNA performance in the desired band. Specifications in this data sheet were obtained using the circuit in the IBM evaluation board for this product. Ordering Information To order samples of the LNA or an evaluation board, contact an IBM sales representative or distributor. Regional contact information is located on the IBM Microelectronics Division web site at: www.ibm.com/chips/support/howtobuy.html Part Number Product IBM43RCLNA1116 SiGe 1800 MHz DCS LowNoise Amplifier with Gain Control IBM43RCLNA1116EVBA 1800 MHz LNA Evaluation Board Note: The low noise amplifier is susceptible to damage from electrostatic discharge (ESD). Observe normal ESD precautions at all times. Page 1 of 6 IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Figure 2. SiGe 1800 MHz DCS LNA Schematic VCC 2.7nH 3 22pF 3.3nH RF IN 2pF 1 2,6 5 LNA RF OUT 8 4 7 2.2pF PG2 PG1 STANDBY Technical Description Table 1. Operating Conditions Symbol VCC1 and VCC2 ICC Parameter Supply voltage Min. Typical Max Units 2.7 2.8 2.9 Vdc µA Supply current 6 20 8.8 10 19.6 22 12.8 15 Notes standby mode low gain mode mA mid gain mode high gain mode IGC1 Gain Control 1 Current 7 10 µA IGC2 Gain Control 2 Current 8 10 µA TOPR Operating Temperature -20 +25 +70 TSTO Storage Temperature -40 +25 +85 °C Table 2. Control Functions1 MODE STANDBY (pin 4) Programmable Gain 1 (pin 7) Programmable Gain 2 (pin 8) High 1 1 1 Mid 1 0 1 Low 1 0 0 0 0 Standby 0 Note: 1Control lines PG1, PG2, and STANDBY require CMOS logic levels. Page 2 of 6 April 03, 2002 IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Table 3. AC Characteristics (VCC = 2.8Vdc, TA = 25 °C) Parameter Symbol Frequency Insertion power gain Over Supply/ Temperature Over Frequency Noise Figure Reverse Isolation Input SWR Output SWR Input Third Order Intercept Input 1dB Compression Point Min F0 S 21 2 2 2 S 21 Variation NF 2 ISWR OSWR IIP3 P1dB . April 03, 2002 -- Units Gain Mode MHz -- dB High 24.0 25.0 28.0 15.5 19.0 22.0 dB Mid -3.0 0.0 3.0 dB Low -- +0.3/-1.2 -- dB High -- +0.5/-0.9 -- dB Mid -- +0.4/-0.9 -- dB Low -- ±0.2 -- dB High -- ±0.1 -- dB Mid -- +0.5/-0.3 -- dB Low -- 2.2 3.0 dB High -- 2.8 3.3 dB Mid -- 5.2 6.0 dB Low -40 -- -- dB All -- -- 3:1 -- High -- -- 3:1 -- Mid -- -- 3:1 -- Low -- -- 2:1 -- -- -- -- 2:1 -- -- -- -- 2:1 -- -- -20.0 -16.0 -- dBm High -12.0 -6.7 -- dBm Mid -12.0 -4.7 -- dBm Low -30.0 -24.0 -- dBm High -20.0 -16.7 -- dBm Mid -13.8 -- dBm Low -- -- -20.0 Stability Max 1805 TO 1880 S 21 Variation S 12 Typ Unconditional Page 3 of 6 IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Figure 3. Low Noise Amplifier Gain Plot (typical) 30 High Gain 25 M e dium Gain Gain (dB) 20 15 10 5 Low Gain 0 -5 1770 1780 1790 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 1910 Fre que ncy (M Hz) Figure 4. Low Noise Amplifier Noise Figure Plot (typical) 5.5 5 Low Gain 4.5 Noise Figure (dB) 4 3.5 M e dium Gain 3 2.5 High Gain 2 1.5 1 0.5 0 1770 1780 1790 1800 1810 1820 1830 1840 1850 1860 1870 1880 1890 1900 1910 Fre que ncy (M Hz) Page 4 of 6 April 03, 2002 IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Table 4. Pin Descriptions Pin Name Description 1 RF IN RF input 2 GND Ground 3 VCC DC supply 4 STANDBY 5 RF OUT 6 GND Ground 7 PG1 Mode control (see Table 2) 8 PG2 Mode control (see Table 2) Package Type RF IN 1 8 PG2 GND 2 7 PG1 VCC 3 6 GND Mode control (see Table 2) RF output 5 RF OUT STANDBY 4 MSOP-8L Package 3.0x3.0 mm. Figure 5. 1800 MHz DCS LNA Package Dimensions MSOP-8L package, All dimensions in millimeters . April 03, 2002 Page 5 of 6 IBM43RCLNA1116 Datasheet SiGe 1800 MHz DCS Low-Noise Amplifier with Gain Control Document Revision Log Rev. January 3, 2001 November 21, 2001 April 03, 2002 © Copyright International Business Machines Corporation 2002 All Rights Reserved Printed in the United States of America April 2002 Contents of Modification Initial release (00) Overall revision (01) Removed ‘preliminary’ for general release Note: This document contains information on products in the design, sampling and/or initial production phases of development. This information is subject to change without notice. Verify with your IBM field applications engineer that you have the latest version of this document before finalizing a design. The following are trademarks of International Business Machines Corporation in the United States, or other countries, or both. IBM IBM Logo Other company, product and service names may be trademarks or service marks of others. All information contained in this document is subject to change without notice. The products described in this document are NOT intended for use in implantation or other life support applications where malfunction may result in injury or death to persons. The information contained in this document does not affect or change IBM product specifications or warranties. Nothing in this document shall operate as an express or implied license or indemnity under the intellectual property rights of IBM or third parties. All information contained in this document was obtained in specific environments, and is presented as an illustration. The results obtained in other operating environments may vary. THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROVIDED ON AN "AS IS" BASIS. In no event will IBM be liable for damages arising directly or indirectly from any use of the information contained in this document. IBM Microelectronics Division 1580 Route 52, Bldg. 504 Hopewell Junction, NY 12533-6351 The IBM home page can be found at http://www.ibm.com The IBM Microelectronics Division home page can be found at http://www.chips.ibm.com lna1116_ds_040302.fm.02 April 03, 2002 Page 6 of 6 April 03, 2002