IRFY9310F MECHANICAL DATA Dimensions in mm (inches) P–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 4.50 4.81 10.40 10.80 3.50 Dia. 3.70 10.50 10.67 16.30 16.70 3.0 0.75 0.95 VDSS ID(cont) RDS(on) 1 2 3 1.0 dia. 3 places ➁ 20 Min. 2.1 max. ➀ 400V 1.8A 7.0W FEATURES 0.75 0.85 2.54 BSC 2.65 2.96 • HERMETICALLY SEALED TO–220 METAL PACKAGE WITH FLEXIBLE LEADS • SIMPLE DRIVE REQUIREMENTS • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE TO220 FLEX PIN1 – Gate PIN 2 – Drain PIN 3 – Source • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 0 , Tcase = 25°C) A ID Continuous Drain Current (VGS = 0 , Tcase = 100°C) 1.1A IDM Pulsed Drain Current 1 7.2A PD Power Dissipation @ Tcase = 25°C 50W ±20V Linear Derating Factor TJ , Tstg Operating and Storage Temperature Range TL Package Mounting Surface Temperature (for 5 sec) RqJC Thermal Resistance Junction to Case 0.4W/°C –55 to 150°C 300°C 2.5°C/W max. Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/00 IRFY9310F ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain – Source On–State VGS = 0 Min. ID = - 250mA Typ. Max. - 400 Reference to 25°C V - 0.41 ID = - 1mA V / °C 7.0 W -4 V VGS = - 10V ID = - 1.1A VGS(th) Gate Threshold Voltage VDS = VGS ID = -250mA gfs Forward Transconductance VDS = -50V ID = -1.1A IDSS Drain-to-Source Leakage Current VDS = - 400V VGS = 0 -100 VDS = - 320V TJ = 125°C -500 IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 270 Coss Output Capacitance VDS = - 25V 50 Crss Reverse Transfer Capacitance f = 1MHz 8.0 Qg Qgs Qgd td(on) tr Resistance 1 Total Gate Charge Gate – Source Charge Gate – Drain (“Miller”) Turn–On Delay Rise Charge1 Time1 Time1 td(off) Turn–Off Delay tf Fall Time1 -2 0.91 S 1 1 Time1 VGS = -10V Unit mA nA pF 13 ID = 1.1A 3.2 VDS = -320V nC 5 VDD = 200V 11 ID = - 1.1A 10 RG = 21W 25 RD = 180W 24 ns SOURCE – DRAIN DIODE CHARACTERISTICS IS Continuous Source Current ISM Pulse Source Current VSD Diode Forward Voltage1 trr Reverse Recovery Time1 Charge1 D Mosfet symbol showing the - 1.8 G integral reverse p-n junction diode IS = - 1.1A - 7.2 S TJ = 25°C -4 V 170 260 ns 640 960 mC VGS = 0V IF = -1.1A TJ = 25°C di / dt £ 100A/ms VDD £ 50V A Qrr Reverse Recovery ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance (6mm down drain lead to centre of die) 4.5 LS Internal Source Inductance (6mm down source lead to centre of source bond pad) 7.5 Negligible nH Notes 1) Pulse Test: Pulse Width £ 300ms, d £ 2% 2) Repetitive Rating – Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 9/00