MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com • • • • Small Compact Surface Mountable Package with J–Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150°C) ULTRAFAST RECTIFIERS 2 AMPERES 200 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds U2D SMB CASE 403A • Shipped in 12 mm Tape and Reel, 2500 units per reel • Polarity: Polarity Band Indicates Cathode Lead • Marking: U2D MAXIMUM RATINGS Symbol ORDERING INFORMATION Rating VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current IFSM Non–Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) TJ Operating Junction Temperature Value Unit 200 Volts 2.0 @ TL = 145°C Amps 40 Amps *65 to °C Device Package Shipping MURS220T3 SMB 2500 Tape & Reel Preferred devices are recommended choices for future use and best overall value. +175 Semiconductor Components Industries, LLC, 2000 June, 2000 – Rev. 1 1 Publication Order Number: MURS220T3/D MURS220T3 THERMAL CHARACTERISTICS Symbol RθJL Characteristic Thermal Resistance, Junction to Lead (TL = 25°C) Value Unit 13 °C/W Value Unit ELECTRICAL CHARACTERISTICS Symbol vF iR trr tfr Characteristic Maximum Instantaneous Forward Voltage (Note NO TAG) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) 0.95 0.77 Maximum Instantaneous Reverse Current (Note NO TAG) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) 2.0 50 Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/µs) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) 35 25 µA ns Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/µs, Rec. to 1.0 V) 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle Volts 25 v 2.0%. http://onsemi.com 2 ns MURS220T3 10 10 7.0 7.0 5.0 5.0 175°C 3.0 3.0 TC = 175°C 2.0 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 100°C TC = 25°C 1.0 0.7 0.5 0.3 0.2 0.1 TC = 100°C 1.0 TC = 25°C 0.7 0.5 0.3 0.2 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.2 1.3 180 200 100 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175°C TJ = 175°C IR, REVERSE CURRENT (m A) IR, REVERSE CURRENT (m A) 2.0 10 TJ = 100°C TJ = 100°C 1.0 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 25°C TJ = 25°C 0.1 0.01 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. http://onsemi.com 3 MURS220T3 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 50 45 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF 35 30 25 20 15 10 5.0 0 0 10 20 30 40 50 60 70 80 90 100 RATED VOLTAGE APPLIED RqJC = 13°C/W TJ = 175°C 8.0 7.0 6.0 5.0 4.0 dc 3.0 2.0 SQUARE WAVE 1.0 0 80 90 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case PF(AV) , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 40 10 9.0 5.0 TJ = 175°C 4.0 3.0 2.0 dc SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation http://onsemi.com 4 2.5 170 180 MURS220T3 PACKAGE DIMENSIONS SMB CASE 403A–03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J H http://onsemi.com 5 INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 MURS220T3 Notes http://onsemi.com 6 MURS220T3 Notes http://onsemi.com 7 MURS220T3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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