MURS260T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. http://onsemi.com • • • • Small Compact Surface Mountable Package with J–Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (1.20 Volts Max @ 2.0 A, TJ = 150°C) ULTRAFAST RECTIFIERS 2 AMPERES 600 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal MARKING DIAGRAM Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • 260°C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2J U2J = Specific Device Code MAXIMUM RATINGS Rating ORDERING INFORMATION Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 600 Volts Average Rectified Forward Current IF(AV) 2.0 @ TL = 125°C Amps 35 Amps 65 to +175 °C Non–Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature TJ Semiconductor Components Industries, LLC, 2000 October, 2000 – Rev. 1 U2J SMB CASE 403A 1 Device Package Shipping MURS260T3 SMB 2500/Tape & Reel Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MURS260T3/D MURS260T3 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RθJL 13 °C/W Symbol Value Unit Thermal Resistance, Junction to Lead (TL = 25°C) ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1.) (iF = 2.0 A, TJ = 25°C) (iF = 2.0 A, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) iR Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/µs) (iF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Maximum Forward Recovery Time (iF = 1.0 A, di/dt = 100 A/µs, Rec. to 1.0 V) tfr Volts 1.45 1.20 µA 5.0 150 ns 75 50 50 ns 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%. 10 10 7.0 7.0 175°C 5.0 TC = 175°C 5.0 TC = 100°C 100°C 3.0 3.0 TC = 25°C 1.0 0.7 0.5 0.3 0.2 0.1 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 TC = 25°C 2.0 IF , INSTANTANEOUS FORWARD CURRENT ( A) I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 2.0 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 0.01 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 2.1 2.3 MURS260T3 100 100 TJ = 175°C IR, REVERSE CURRENT ( A) IR, REVERSE CURRENT ( A) TJ = 175°C 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.01 0 200 100 300 400 500 600 10 TJ = 100°C 1.0 TJ = 25°C 0.1 0.01 700 0 100 200 300 400 500 600 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current 700 25 NOTE: TYPICAL CAPACITANCE AT 0 V = 24 pF 15 10 5.0 0 0 4.0 8.0 12 16 20 24 28 32 36 40 10 RATED VOLTAGE APPLIED RJL = 13°C/W TJ = 175°C 9.0 8.0 7.0 6.0 5.0 4.0 dc 3.0 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating, Case PF(AV) , AVERAGE POWER DISSIPATION (WATTS) C, CAPACITANCE (pF) 20 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. 5.0 SQUARE WAVE 4.0 3.0 dc TJ = 175°C 2.0 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation http://onsemi.com 3 2.5 180 200 MURS260T3 PACKAGE DIMENSIONS SMB DO–214AA CASE 403A–03 ISSUE D S A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. D B C K P J INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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