2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAFX50N20A Features • • • • • • • 200 Volts 50 Amps 45 mΩ Ω Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request N-CHANNEL ENHANCEMENT MODE POWER MOSFET Maximum Ratings @ 25°°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) @ TJ ≥ 25°C Drain-to-Gate Breakdown Voltage @ TJ ≥ 25°C, RGS= 1 MΩ Continuous Gate-to-Source Voltage Transient Gate-to-Source Voltage Continuous Drain Current 100°C Peak Drain Current, pulse width limited by TJmax Repetitive Avalanche Current Repetitive Avalanche Energy Single Pulse Avalanche Energy Voltage Rate of Change of the Recovery Diode Tj= 25°C Tj= SYMBOL MAX. UNIT BVDSS 200 Volts BVDGR VGS VGSM ID25 ID100 200 +/-20 +/-30 50 40 Volts Volts Volts Amps IDM IAR EAR EAS dv/dt 200 50 30 tbd 5.0 Amps Amps mJ mJ V/ns PD Tj Tstg IS ISM θJC 300 -55 to +150 -55 to +150 50 200 0.25 Watts °C °C Amps Amps °C/W @ IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C Power Dissipation Junction Temperature Range Storage Temperature Range Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Thermal Resistance, Junction to Case Mechanical Outline DRAIN GATE SOURCE Datasheet# MSC0258B MSAFX50N20A Electrical Parameters @ 25°°C (unless otherwise specified) DESCRIPTION Drain-to-Source Breakdown Voltage (Gate Shorted to Source) Temperature Coefficient of the Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Current SYMBOL BVDSS VGS(th) IDSS RDS(on) Forward Transconductance (1) gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Body Diode Forward Voltage (1) Ciss Coss Crss Td(on) tr td(off) tf Qg(on) Qgs Qgd VSD Reverse Recovery Time (Body Diode) trr Reverse Recovery Charge Qrr TYP. MAX 200 VDS = VGS, ID = 4 mA VGS = ± 20V DC, VDS = 0 T J = 25°C T J = 125°C VDS =0.8•BVDSS TJ = 25°C VGS = 0 V T J = 125°C VGS= 10V, I D= 25A T J = 25°C I D= 50A T J = 25°C I D= 25A T J = 125°C VDS ≥ 10 V; I D = 50 A VGS = 0 V, V DS = 25 V, f = 1 MHz VGS = 10 V, V DS = 100 V, ID = 25 A, R G = 2.00 Ω VGS = 10 V, V DS = 100V, I D = 25A IF = IS, VGS = 0 V IF = 10 A, -di/dt = 100 A/ µs, IF = 10 A, di/dt = 100 A/ µs, Pulse test, t ≤ 300 µ s, duty cycle δ ≤ 2% Microsemi Corp. does not manufacture the mosfet die; contact company for details. 25 C 125 C 25 C 125 C 2.0 26 UNIT V tbd Notes (1) (2) MIN ∆BVDSS/∆TJ IGSS Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) Static Drain-to-Source On-State Resistance (1) CONDITIONS VGS = 0 V, I D = 250 µA V/°C 4.0 ±100 ±200 200 1000 0.045 0.055 0.09 32 4400 800 285 20 15 75 20 190 35 95 V nA µA Ω S pF 25 20 90 25 220 50 110 1.5 200 300 1.5 2.6 ns nC V ns µC