SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC, Dual gate GaAs FET SELECTION GUIDE October 2002 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of October, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 2 Selection Guide PU10015EJ03V0PF CONTENS 1. INTRODUCTION ........................................................................................................................... 5 2. PRODUCTS LINE-UP .................................................................................................................. 6 Discretes................................................................................................................................................ 6 ICs .......................................................................................................................................................... 6 3. HIGH-FREQUENCY CHARACTERISTICS MAP........................................................................ 7 Bipolar Transistors ............................................................................................................................... 7 Dual Gate FETs ..................................................................................................................................... 8 Medium Output Power Transistors, Middle-Power LD-MOS FETs, High-Power LD-MOS FETs .... 9 Prescalers............................................................................................................................................ 10 High-Frequency Amplifiers ................................................................................................................ 11 3 V High-Frequency Amplifiers .......................................................................................................... 14 4. PACKAGE, CHARACTERISTICS CROSS-REFERENCE........................................................ 15 Low Noise Transistors, SiGe HBT..................................................................................................... 15 Dual Gate MOS FETs .......................................................................................................................... 16 Dual Gate GaAs FETs ......................................................................................................................... 16 Twin Transistors ................................................................................................................................. 17 5. PART NO., PRODUCTS LINE-UP ........................................................................................... 18 Low Noise Transistors ....................................................................................................................... 18 SiGe HBT ............................................................................................................................................. 28 Medium Output Power Transistors ................................................................................................... 28 Middle-Power LD-MOS FETs.............................................................................................................. 28 High-Power LD-MOS FETs ................................................................................................................. 30 Dual Gate MOS FETs .......................................................................................................................... 30 Dual Gate GaAs FETs ......................................................................................................................... 30 Twin Transistors ................................................................................................................................. 32 Prescalers............................................................................................................................................ 36 High-Frequency Amplifiers ................................................................................................................ 38 Down-Converters ................................................................................................................................ 42 Up-Converters ..................................................................................................................................... 46 Differential Input/Output Amplifiers .................................................................................................. 46 Modulators/Demodulators ................................................................................................................. 48 Variable Gain Amplifiers .................................................................................................................... 48 Low Current High-Frequency Amplifiers .......................................................................................... 49 BiCMOS, CMOS PLL Synthesizers .................................................................................................... 49 Bipolar PLL Synthesizers................................................................................................................... 49 6. PACKAGE DIMENSIONS .......................................................................................................... 50 7. MOUNTING PAD LAYOUT ......................................................................................................... 54 8. MARKING, hFE RANK INFORMATION FOR MINIMOLD DEVICES.................................... 57 Selection Guide PU10015EJ03V0PF 3 Bipolar Transistors ............................................................................................................................. 57 SiGe HBT ............................................................................................................................................. 59 Dual Gate FETs ................................................................................................................................... 59 Middle-Power LD-MOS FETs (79A Package) .................................................................................... 59 9. MARKINGS VS. PART NO. ON HIGH-FREQUENCY IC OF 4-PIN/6-PIN/SUPER MINIMOLD........................... 60 4 Selection Guide PU10015EJ03V0PF 1. INTRODUCTION High-frequency semiconductor application, which has conventionally hand-held telephone or CATV/DBS converter, is recently spread over the systems of GPS, Bluetooth TM , Wireless LAN and so on. In order to respond to various needs, NEC Compound Semiconductor Devices, Ltd. prepares rich line-up of high-frequency semiconductors, for example transistors, wideband amplifiers, Up/down-converters, PLL synthesizers etc. This selection guide introduces our high-frequency semiconductors line-up to select the most suitable products on system design. We hope this guide helps selecting products among our line-up. On the other hand, to know detail specification, please refer to the latest data sheets, technical notes (application notes) and “RF and Microwave Devices Data Book (CD-ROM) ” (PX10017E) which are helpful as same as this guide. (“GaAs Device Selection Guide” (PG10195E) is also available.) Selection Guide PU10015EJ03V0PF 5 2. PRODUCTS LINE-UP NEC Compound Semiconductor Devices, Ltd. provides two kinds of silicon microwave semiconductors: discrete semiconductors and monolithic ICs of silicon and silicon germanium. The discrete microwave transistor series can be broadly divided into single type and twin type. The former includes low noise NPN transistors, SiGe HBT, medium output power transistors, middle-power LD-MOS FETs, high-power LD-MOS FETs, dual gate MOS FETs, dual gate GaAs FETs, and so on, whereas the latter consists of twin transistors, which comprise two low-noise NPN transistors integrated in a single package. The silicon microwave monolithic IC group is made up of transistor arrays and prescalers, amplifiers, mixers, modulators/demodulators, and PLL synthesizer ICs. The product lineup is illustrated in tree-diagram form below. (1) Discretes Low Noise Transistors (2SA, 2SC Type) SiGe HBT (NESG Type) Medium Output Power Transistors (2SC Type) Transistors Single Type Middle-Power LD-MOS FETs (NE55 Type) High-Power LD-MOS FETs (NEM Type) Dual Gate MOS FETs (3SK Type) Dual Gate GaAs FETs (3SK Type) Twin Type Twin Transistors ( µ PA Type) (2) ICs Prescalers ( µ PB Type) High-Frequency Amplifiers ( µ PC Type) Up/Down-Converters ( µ PC Type) Differential Input/Output Amplifiers ( µ PC Type) Silicon MMICs*1 *1 Microwave Monolithic Integrated Circuits *2 Phase Locked Loop Modulator/Demodulators ( µ PC Type) Variable Gain Amplifiers ( µ PC Type) *2 BiCMOS, CMOS PLL Synthesizers (µ PD Type) Bipolar PLL Synthesizers ( µ PB Type) 6 Selection Guide PU10015EJ03V0PF 3. HIGH-FREQUENCY CHARACTERISTICS MAP Bipolar Transistors INSERTION GAIN vs. FREQUENCY 16.0 15.0 2SC4094 Insertion Gain | S21e | 2 (dB) 14.0 2SC4093 2SC3583 13.0 12.0 2SC4227 2SC5180 2SC3356 2SC4957 2SC5185 11.0 2SC5181 10.0 2SC5186 2SC4095 2SC4226 2SC3357 9.0 2SC4955/59 2SC5194 2SC3585 2SC5192/95 8.0 7.0 0.2 2SC4570 2SC4571 0.3 0.5 1.0 2SC4228 2.0 3.0 4.0 Frequency f (GHz) Selection Guide PU10015EJ03V0PF 7 Dual Gate FETs NOISE FIGURE vs. POWER GAIN (1/3) VHF Band (f = 200 MHz) 2.5 Noise Figure NF (dB) 2.0 1.5 3SK222 1.0 0.5 0 20 21 22 23 24 25 Power Gain Gps (dB) NOISE FIGURE vs. POWER GAIN (2/3) CATV Band (f = 470 MHz) 3.5 Noise Figure NF(dB) 3.0 2.5 2.0 3SK254 1.5 1.0 18 19 20 21 Power Gain Gps (dB) 8 Selection Guide PU10015EJ03V0PF 22 23 24 NOISE FIGURE vs. POWER GAIN (3/3) UHF Band (f = 900 MHz) 3.5 Noise Figure NF (dB) 3.0 2.5 2.0 3SK255 1.5 3SK299(GaAs) 1.0 16 17 18 19 20 21 22 23 24 Power Gain Gps (dB) Medium Output Power Transistors, Middle-Power LD-MOS FETs, High-Power LD-MOS FETs OUTPUT POWER vs. FREQUENCY 50 NEM090303M-28 Output Power PO (dBm) 45 40 35 NE5510279A NE5520379A NE5500479A NE5520279A NE5500179A NE552R679A 2SC5289 2SC5754 NE552R479A 2SC5288 30 25 20 0.1 1.0 10.0 Frequency f (GHz) Selection Guide PU10015EJ03V0PF 9 Prescalers DIVISION RATIO vs. FREQUENCY µPB1509 Division Ratio 2/4/8 µPB1511 µPB1507 64/128/256 µPB1510 4 µPB1508 2 7 10 30 50 70 100 300 500 700 1G 3G 5G Frequency f (MHz) INPUT POWER vs. FREQUENCY 40 µPB1510 µPB1509 20 µPB1508 Pin MAX. Input Power Pin (dBm) µPB1511 µPB1507 0 µPB1507 µPB1508 –20 Pin MIN. µPB1510 µPB1511 –40 µPB1509 –60 7 10 30 50 70 100 300 500 700 1G Frequecy f (MHz) 10 Selection Guide PU10015EJ03V0PF 3G 5G High-Frequency Amplifiers POWER GAIN, NOISE FIGURE vs. FREQUENCY (1/3) 50 Power Gain GP (dB) Noise Figure NF (dB) 40 30 GP µPC1678 20 10 µPC1678 NF 0 7 10 30 50 70 100 300 500 700 1000 3000 5000 Frequency f (MHz) POWER GAIN, NOISE FIGURE vs. FREQUENCY (2/3) 25 µPC1676 µPC1688 Power Gain GP (dB) Noise Figure NF (dB) 20 GP 15 µPC1675 10 µPC1675 µPC1676 NF 5 µPC1688 0 7 10 30 50 70 100 300 500 700 1G 3G 5G Frequency f (MHz) Selection Guide PU10015EJ03V0PF 11 POWER GAIN, NOISE FIGURE vs. FREQUENCY (3/3) 50 Power Gain GP (dB) Noise Figure NF (dB) 40 µPC2710 30 GP µPC2709 µPC3215 20 µPC2712 µPC2708 µPC2749 10 NF 0 µPC2711 µPC2708/11 µPC2709/12 7 10 30 50 70 100 µPC2710 300 500 700 1G µPC3215 3G 5G µPC2749 Frequency f (MHz) SATURATED OUTPUT POWER vs. FREQUENCY (1/2) Saturated Output Power PO(sat) (dBm) +30 +20 µPC2710 µPC2763 µPC2709 +10 µPC2762 µPC2708 µPC2712/3215 0 µPC2749 µPC2711 –10 –20 7 10 30 50 70 100 300 500 700 1G Frequency f (MHz) 12 Selection Guide PU10015EJ03V0PF 3G 5G SATURATED OUTPUT POWER vs. FREQUENCY (2/2) Saturated Output Power PO(sat) (dBm) +30 +20 µPC1678G +10 µPC1688G µPC1675G µPC1676G 0 –10 –20 7 10 30 50 70 100 300 500 700 1G 3G 5G Frequency f (MHz) Selection Guide PU10015EJ03V0PF 13 3 V High-Frequency Amplifiers POWER GAIN, NOISE FIGURE vs. FREQUENCY 25 µPC8181 µPC2771 20 Power Gain GP (dB) Noise Figure NF (dB) µPC2746 µPC8182 GP µPC2763 µPC2749 15 µPC2762 µPC2748 µPC2747 10 µPC2745 µPC2745 NF 5 µPC2746 µPC2747,2749 µPC2748 0 7 10 30 50 70 100 300 500 700 1G 3G 5G Frequency f (MHz) SATURATED OUTPUT POWER vs. FREQUENCY Saturated Output Power PO(sat) (dBm) 30 20 µPC8182 µPC2771 µPC8181 10 µPC2763 0 µPC2746 µPC2748 –20 µPC2745 µPC2749 –10 7 10 30 50 70 100 300 500 700 1G Frequency f (MHz) 14 µPC2762 Selection Guide PU10015EJ03V0PF µPC2747 3G 5G 4. PACKAGE, CHARACTERISTICS CROSS-REFERENCE (1) Low Noise Transistors, SiGe HBT Transistors Family Table fT (GHz) IC (mA) New Products Process 2SC No. TO-92 3-Pin 6-Pin 3-Pin 4-Pin 4-Pin 6-Pin 3-Pin 4-Pin Flat-Lead Flat-Lead Flat-Lead Super Lead-Less Ultra Super Power Minimold Super Lead-Less 3-Pin 4-Pin 4-Pin Super Minimold Thin-Type Thin-Type Minimold Minimold Thin-Type Minimold Lead-Less Minimold Minimold (1005) Minimold (1208) Ultra Ultra Ultra (1608) (0804) Super Super Super Minimold Minimold Minimold (1408) (SOT-323) (SOT-89) (SOT-143) (SOT-343) (SOT-363) 19 30 M02 39 18 M01 M13 M13 M03 M04 M05 3-Pin 3-Pin 3-Pin Power Minimold Super Minimold Minimold (SOT-89) 34 (SOT-23) 33 Mold Size 4.5×2.5 2.9×1.5 2.0×1.25 1.6×0.8 1.4×0.8 1.0×0.5 0.8×0.4 4.5×2.45 2.9×1.5 2.0×1.25 2.0×1.25 2.0×1.25 2.0×1.25 1.2×0.8 Package Size 4.5×4.0 2.9×2.8 2.0×2.1 1.6×1.6 1.4×1.2 1.0×0.7 0.8×0.6 4.5×3.95 2.9×2.8 1.5 1.3 0.9 0.75 0.59 0.5 4571 5004 5431 4570 5005 4226 5006 32 High 4.5 70 5.0 60 5.3 250 5.5 30 6.0 150 7.0 100*1 0.4 1.5 4536 4703 3355 3357 5011 5432 5614 5676 5677 5336 5745 5746 5433 5615 4094 5012 35 3585 4228 5008 5434 4095 5013 100*1 5191 5193 5195 5437 5192 5194 5741 5736 3582 5800 5801 5289 4955 4959 5010 14.0 30 14.5 50 15.0 50 15.5 10 5181 30 5186 17.0 100 20.0 35 5435 5617 NE685M33 4957 5015 5455 5752 5753 5369 5454 5750 5751 5180 5436 5618 5786 5787 5667 5668 5674 5606 NE662M03 NE687M33 5185 5509 500 5754 12 35 5507 5508 35 5704 SiGe NESG2021M05 NESG2031M05 100 36.0 0.5 5288 100 35 0.9 NE851M33 300 30 0.59 5338 3356 150 25.0 4093 0.59 5337 5007 10.0 25.0 0.9 4227 65 21.0 1.3 Silicon 1.2×1.0 2570A 3583 9.0 12.0 2.0×2.1 2.0×2.05 2.0×2.05 2.0×2.1 NESG2101M05 35 5761 5843 *1 The lower-line product is an improved-characteristics version. Selection Guide PU10015EJ03V0PF 15 (2) Dual Gate MOS FETs Package Application VHF Band (to 200 MHz) 4 -pin Minimold 3SK222 CATV Band (to 470 MHz) UHF Band (to 900 MHz) 4-pin Super Minimold 3SK254 λ/4 matching 3SK255 (3) Dual Gate GaAs FETs Package 4-pin Super Minimold 3SK299 16 Remark Wg = 400 µm Selection Guide PU10015EJ03V0PF (4) Twin Transistors Twin transistors are composed of two low-noise NPN transistors integrated in a single package, and can be divided into 4 different types, depending on the pin layout. There are, moreover, 2 types of chip: a homogenous chip on which two elements with identical characteristics have been mounted (“same chip”), and a heterogeneous chip on which two elements with different characteristics have been mounted (“different chip”). Various package sizes are also available. The relationship between the part number and internal elements is shown in the table below. New Products B1 B2 E2 B1 Q1 Q2 C1 E1 C2 Type 1 E1 E2 B1 Q1 Q2 C1 B2 C2 Type 2 E2 B2 B1 Q1 Q2 Q1 Q2 C1 E1 C2 Type 3 C1 E1 C2 Type 4 Same Chip for Pager Part No. µPA800T µPA801T, TC µPA802T, TC µPA803T µPA804T µPA805T µPA806T µPA807T µPA808T, TC µPA809T µPA872TD µPA873TC, TD, TS 2SC5434 2SC5432 2SC5433 2SC5005 2SC5431 2SC5009 2SC5435 2SC5181 2SC5436 2SC5437 2SC5676 2SC5800 Remark Mold size T Type TC Type TD Type TS Type for Mobile Communications 2SC No. (×2) Part No. B2 Different Chip for VCO 2SC No. (×2) E2 µPA811T µPA810T µPA812T µPA813T 2SC5434 2SC5432 2SC5433 2SC5005 µPA814T 2SC5437 Part No. µPA828TC µPA891TC, TD µPA892TC, TD µPA895TD, TS 2SC No. (×2) 2SC5436 2SC5600 2SC5668 2SC5800 for VCO Part No. µPA831TC µPA841TD µPA844TC µPA850TD µPA851TD µPA854TD µPA855TD µPA859TD µPA860TC, TD µPA861TC, TD µPA862TC, TD, TS µPA863TC, TD, TS 2SC No. Q1 2SC5432 2SC5435 2SC5436 2SC5435 2SC5737 2SC5435 2SC5737 2SC5737 2SC5435 2SC5436 2SC5435 2SC5436 Q2 2SC5433 2SC5600 2SC5668 2SC5736 2SC5736 2SC5745 2SC5745 2SC5676 2SC5786 2SC5786 2SC5800 2SC5800 : 2.0 × 1.25 × 0.9 (mm) : 1.5 × 1.1 × 0.55 (mm) : 1.2 × 0.8 × 0.5 (mm) : 1.0 × 0.7 × 0.5 (mm) Selection Guide PU10015EJ03V0PF 17 5. PART NO., PRODUCTS LINE-UP (1) Low Noise Transistors (1/5) A wide range of products are available, classified by function and application. Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) hFE Part Number VCBO (V) VCEO (V) VEBO PT (V) (mW) VCE (V) IC (mA) fT (GHz) MIN. MAX. S21e2 (dB) Cre (pF) VCE (V) IC (mA) TYP. VCB (V) IE f (mA) (MHz) TYP. MAX. VCE (V) IC (mA) 2SA1977 (NE97733) −20 −12 −3 200 −8 −20 20 100 −8 −20 8.5 −10 0 1 0.5 1 −8 −20 2SA1978 (NE97833) −20 −12 −3 200 −10 −15 20 100 −10 0 0.5 −10 0 1 0.5 1 −10 −15 2SC2570A (NE02132) 25 12 3 600 10 20 40 200 10 20 5.0 10 0 1 0.7 1.0 10 20 2SC3355 (NE85632) 20 12 3 600 10 20 50 300 10 20 6.5 10 0 1 0.65 1.0 10 20 2SC3356 (NE85633) 20 12 3 200 10 20 50 300 10 20 7.0 10 0 1 0.55 1.0 10 20 2SC3357 (NE85634) 20 12 3 1 200 10 20 50 300 10 20 6.5 10 0 1 0.65 1.0 10 20 2SC3582 (NE68132) 20 10 1.5 600 8 20 50 250 8 20 8.0 10 0 1 0.4 0.9 8 20 2SC3583 (NE68133) 20 10 1.5 200 8 20 50 250 8 20 9.0 10 0 1 0.35 0.9 8 20 2SC3585 (NE68033) 20 10 1.5 200 6 10 50 250 6 10 10.0 10 0 1 0.3 0.8 6 10 2SC4093 (NE85639E) 20 12 3 200 10 20 50 250 10 20 6.5 10 0 1 0.5 0.9 10 20 2SC4094 (NE68139) 20 10 1.5 200 8 20 50 250 8 20 9.0 10 0 1 0.25 0.8 8 20 2SC4095 (NE68039E) 20 10 1.5 200 6 10 50 250 6 10 10.0 10 0 1 0.25 0.8 6 10 2SC4226 (NE85630) 20 12 3.0 150 3 7 40 250 3 7 4.5 3 0 1 0.7 1.5 3 7 2SC4227 (NE68130) 20 10 1.5 150 3 7 40 240 3 7 7.0 3 0 1 0.45 0.9 3 7 2SC4228 (NE68030) 20 10 1.5 150 3 5 50 250 3 5 8.5 3 0 1 0.3 0.7 3 5 2SC4536 (NE46134) 30 15 3.0 2 000 10 50 40 200 10 50 5.7 10 0 1 2.2 − 10 50 2SC4570 (NE58130) 20 12 3.0 200 5 5 40 200 5 5 5.5 5 0 1 0.7 5 5 2SC4571 (NE58230) 20 12 3.0 200 5 5 40 200 5 5 5.0 5 0 1 0.9 5 5 2SC4703 (NE46234) 25 12 2.5 1 800 5 50 50 250 5 50 6.0 5 0 1 1.5 5 50 *1 *1 *1 *1 Cob (measurement: emitter open) 18 Selection Guide PU10015EJ03V0PF *1 0.9 *1 1.2 *1 2.5 Electrical Characteristics (TA = +25°C) S21e2 (dB) f (GHz) TYP. Marking (hFE value) NF (dB) VCE (V) IC f (mA) (GHz) TYP. MAX. Outline Part Number Remarks 1 12 −8 −3 1 1.5 3 T92 3MM 2SA1977 (NE97733) 1 10 −10 −3 1 2 3 T93 3MM 2SA1978 (NE97833) 1.0 10.0 10 5 1.0 1.5 3.0 MAG = 11.5 dB (TYP.), @ f = 1 GHz E TO-92 2SC2570A (NE02132) 1.0 9.5 10 7 1.0 1.1 − NF = 1.8 dB(TYP.), @ IC = 40 mA, f = 1 GHz K TO-92 2SC3355 (NE85632) 1.0 11.5 10 7 1.0 1.1 2.0 R23, R24, R25 3MM 2SC3356 (NE85633) 1.0 9.0 10 7 1.0 1.1 − RH, RF, RE 3PMM 2SC3357 (NE85634) 1.0 11.0 8 7 1.0 1.2 2.5 MAG = 13 dB (TYP.), @ f = 1.0 GHz K TO-92 2SC3582 (NE68132) 1.0 13.0 8 7 1.0 1.2 2.5 MAG = 15 dB (TYP.), @ f = 1.0 GHz R33, R34, R35 3MM 2SC3583 (NE68133) 2.0 8.0 6 5 2.0 1.8 3.0 MAG = 10 dB (TYP.), @ f = 2.0 GHz R43, R44, R45 3MM 2SC3585 (NE68033) 1.0 13.0 10 7 1.0 1.1 2.0 R26, R27, R28 4MM 2SC4093 (NE85639E) 1.0 15.0 8 7 1.0 1.2 2.5 MAG = 17.0 dB (TYP.), @ f = 1.0 GHz R36, R37, R38 4MM 2SC4094 (NE68139) 2.0 9.5 6 5 2.0 1.8 3.0 MAG = 12.0 dB (TYP.), @ f = 2.0 GHz R46, R47, R48 4MM 2SC4095 (NE68039E) 1.0 9.0 3 7 1.0 1.2 2.5 R23, R24, R25 3SMM 2SC4226 (NE85630) 1.0 12 3 7 1.0 1.4 2.7 R33, R34, R35 3SMM 2SC4227 (NE68130) 2.0 7.5 3 5 2.0 1.9 3.2 R43, R44, R45 3SMM 2SC4228 (NE68030) 1.0 7.0 10 50 0.5 2.5 − QR, QS 3PMM 2SC4536 (NE46134) 1.0 7.0 − − − − − T72, T73, T74 3SMM 2SC4570 (NE58130) 1.0 7.0 − − − − − T75, T76, T77 3SMM 2SC4571 (NE58230) 1.0 8.3 5 50 1.0 2.3 3.5 SH, SF, SE 3PMM 2SC4703 (NE46234) NF = 1.8 dB(TYP.), @ IC = 40 mA, f = 1 GHz NF = 1.5 dB (TYP.) @ IC = 10 mA, f = 500 MHz IM2 = −55 dB, IM3 = −76 dB Selection Guide PU10015EJ03V0PF 19 (1) Low Noise Transistors (2/5) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) hFE Part Number VCBO (V) VCEO (V) VEBO PT (V) (mW) VCE (V) IC (mA) fT (GHz) MIN. MAX. VCE (V) S21e2 (dB) Cre (pF) IC (mA) TYP. VCB (V) IE f (mA) (MHz) TYP. MAX. VCE (V) IC (mA) 2SC4955 (NE68533) 9 6 2.0 180 3 10 65 175 3 10 12 3 0 1 0.4 0.7 3 10 2SC4957 (NE68539E) 9 6 2.0 180 3 10 65 175 3 10 12 3 0 1 0.3 0.5 3 10 2SC4959 (NE68530) 9 6 2.0 150 3 10 65 175 3 10 12 3 0 1 0.4 0.7 3 10 2SC5004 (NE58219) 20 12 3.0 100 5 5 60 120 5 5 5.0 5 0 1 0.9 5 5 2SC5005 (NE58119) 20 12 3.0 100 5 5 60 120 5 5 5.5 5 0 1 0.7 0.9 5 5 2SC5006 (NE85619) 20 12 3.0 100 3 7 80 160 3 7 4.5 3 0 1 0.7 1.5 3 7 2SC5007 (NE68119) 20 10 1.5 100 3 7 80 160 3 7 7.0 3 0 1 − 0.9 3 7 2SC5008 (NE68019) 20 10 1.5 100 3 5 80 160 3 7 8.0 3 0 1 0.3 0.7 3 5 2SC5010 (NE68519) 9 6 2.0 100 3 10 65 175 3 10 12.0 3 0 1 0.4 0.7 3 3 2SC5011 (NE85618) 20 12 3.0 150 3 7 50 250 10 20 6.5 10 0 1 0.5 0.9 10 20 2SC5012 (NE68118) 20 10 1.5 150 8 20 50 250 8 20 9.0 10 0 1 0.25 0.8 8 20 2SC5013 (NE68018) 20 10 1.5 150 6 10 50 250 6 10 10.0 10 0 1 0.25 0.8 6 10 2SC5015 (NE68518) 9 6 2.0 150 3 10 65 175 3 10 12.0 3 0 1 0.3 0.5 3 10 *1 *1 *1 Cob (measurement: emitter open) *2 MIN. spec 20 Selection Guide PU10015EJ03V0PF *1 1.2 *1 Electrical Characteristics (TA = +25°C) S21e2 (dB) f (GHz) TYP. Marking (hFE value) NF (dB) VCE (V) IC f (mA) (GHz) TYP. MAX. Outline Part Number Remarks 2.0 8.5 3 3 2.0 1.5 2.5 T83 3MM 2SC4955 (NE68533) 2.0 11 3 3 2.0 1.5 2.5 T83 4MM 2SC4957 (NE68539E) 2.0 11 3 3 2.0 1.5 2.5 T83 3SMM 1.0 5.0 − − − − − 77 3USMM 2SC5004 (NE58219) 1.0 5.0 − − − − − 73 3USMM 2SC5005 (NE58119) 1.0 9 3 7 1.0 1.2 2.5 24 3USMM 2SC5006 (NE85619) 1.0 12 3 7 1.0 1.4 2.7 34 3USMM 2SC5007 (NE68119) 2.0 7.5 3 5 2.0 1.9 3.2 44 3USMM 2SC5008 (NE68019) 2.0 8.5 3 3 2.0 1.5 2.5 83 3USMM 2SC5010 (NE68519) 1.0 13 10 7 1.0 1.1 2.0 R26, R27, R28 4SMM 2SC5011 (NE85618) 1.0 15 8 7 1.0 1.2 2.5 R36, R37, R38 4SMM 2SC5012 (NE68118) 2.0 9.5 6 5 2.0 1.8 3.0 R46, R47, R48 4SMM 2SC5013 (NE68018) 2.0 11 3 3 2.0 1.5 2.5 T83 4SMM 2SC5015 (NE68518) *2 *2 Selection Guide PU10015EJ03V0PF 2SC4959 (NE68530) 21 (1) Low Noise Transistors (3/5) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) hFE Part Number VCBO (V) VCEO (V) VEBO (V) IC PT (mA) (mW) fT (GHz) Cre (pF) VCE (V) IC (mA) MIN. MAX. VCE (V) IC (mA) TYP. VCB (V) IE f (mA) (MHz) TYP. MAX. 2SC5180 (NE68618) 5 3 2 10 30 2 7 70 140 2 7 15.5 2 0 1 0.3 0.5 2SC5181 (NE68619) 5 3 2 10 30 2 7 70 140 2 7 13 2 0 1 0.3 0.4 2SC5185 (NE68718) 5 3 2 30 90 2 20 70 140 2 20 13 2 0 1 0.3 0.6 2SC5186 (NE68719) 5 3 2 30 90 2 20 70 140 2 20 11 2 0 1 0.4 0.8 2SC5191 (NE68833) 9 6 2 100 200 1 3 80 160 3 20 8.5 1 0 1 0.75 0.85 2SC5192 (NE68839) 9 6 2 100 200 1 3 80 160 3 20 9 1 0 1 0.65 0.8 2SC5193 (NE68830) 9 6 2 100 150 1 3 80 160 3 20 9 1 0 1 0.75 0.85 2SC5194 (NE68818) 9 6 2 100 150 1 3 80 160 3 20 10 1 0 1 0.65 0.8 2SC5195 (NE68819) 9 6 2 100 125 1 3 80 160 3 20 9.5 1 0 1 0.7 0.8 2SC5336 (NE856M02) 20 12 3 100 1 200 10 20 50 250 10 20 6.5 10 0 1 0.5 0.8 2SC5337 (NE461M02) 30 15 3 250 2 000 10 50 40 200 − − − − − − − − 2SC5338 (NE462M02) 25 12 2.5 150 1 800 5 50 50 250 5 50 6 5 0 1 1 2 2SC5369 (NE696M01) 9 6 2 30 150 3 10 80 160 3 10 14 3 0 1 0.15 0.25 22 Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) S21e2 (dB) VCE (V) NF IC f (mA) (GHz) TYP. VCE (V) IC f (mA) (GHz) TYP. Rank Marking (hFE value) Remarks Outline Part Number MAX. 2SC5180 (NE68618) 2 7 2 12 1 3 2 1.5 2.0 Spec at Both VCE = 1 V & 3 V FB T84 2 7 2 10.5 1 3 2 1.5 2.0 Spec at Both VCE = 1 V & 3 V FB 84 2 20 2 11 1 3 2 1.3 2.0 Spec at Both VCE = 1 V & 3 V FB T86 2 20 2 10 1 3 2 1.3 2.0 Spec at Both VCE = 1 V & 3 V FB 86 3 20 2 6.5 3 7 2 1.5 − Spec at Only VCE = 1 V FB T88 3MM 2SC5191 (NE68833) 3 20 2 8 3 7 2 1.5 − Spec at Only VCE = 1 V FB T88 4MM 2SC5192 (NE68839) 3 20 2 6.5 3 7 2 1.5 − Spec at Only VCE = 1 V FB T88 3SMM 2SC5193 (NE68830) 3 20 2 8.5 3 7 2 1.5 − Spec at Only VCE = 1 V FB T88 4SMM 2SC5194 (NE68818) 3 20 2 8 3 7 2 1.5 − Spec at Only VCE = 1 V FB 88 10 20 1 12 10 7 1 1.1 − RH, RF, RE RH, RF, RE 4PMM 2SC5336 (NE856M02) 10 50 1 8.3 10 50 1 2.0 3.5 QQ, QR, QS QQ, QR, QS 4PMM 2SC5337 (NE461M02) 5 50 1 10 5 50 1 − 3.5 SH, SF, SE SH, SF, SE 4PMM 2SC5338 (NE462M02) 3 10 2 14 3 3 2 1.3 2.3 FB T95 6SMM 2SC5369 (NE696M01) Selection Guide PU10015EJ03V0PF 4SMM 3USMM 2SC5181 (NE68619) 4SMM 2SC5185 (NE68718) 3USMM 2SC5186 (NE68719) 3USMM 2SC5195 (NE68819) 23 (1) Low Noise Transistors (4/5) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) hFE Part Number VCBO (V) VCEO (V) VEBO (V) IC PT (mA) (mW) fT (GHz) Cre (pF) VCE (V) IC (mA) MIN. MAX. VCE (V) IC (mA) TYP. VCB (V) IE f (mA) (MHz) TYP. MAX. 2SC5431 (NE582M03) 20 12 3 60 100 5 5 60 120 5 5 4.3 5 0 1 0.6 1.2 2SC5432 (NE856M03) 20 12 3 100 125 3 7 80 145 3 7 4.5 3 0 1 0.7 1.5 2SC5433 (NE681M03) 20 10 1.5 65 125 3 7 80 145 3 7 7 3 0 1 − 0.9 2SC5434 (NE680M03) 20 10 1.5 35 125 3 5 80 145 3 5 8 3 0 1 0.3 0.7 2SC5435 (NE685M03) 9 6 2 30 125 3 10 75 140 3 10 12 3 0 1 0.4 0.7 2SC5436 (NE687M03) 5 3 2 30 90 2 20 70 130 2 20 14 2 0 1 0.4 0.8 2SC5437 (NE688M03) 9 6 2 100 125 1 3 80 145 3 20 9.5 1 0 1 0.7 0.8 2SC5454 (NE67739) 9 6 2 50 200 3 20 75 150 3 20 14.5 3 0 1 0.3 0.5 2SC5455 (NE67839) 9 6 2 100 200 3 30 75 150 3 30 12 3 0 1 0.5 0.7 2SC5507 (NE661M04) 15 3.3 1.5 12 39 2 2 50 100 3 10 25 2 0 1 0.08 0.12 2SC5508 (NE662M04) 15 3.3 1.5 35 115 2 5 50 100 3 30 25 2 0 1 0.18 0.24 2SC5509 (NE663M04) 15 3.3 1.5 100 190 2 10 50 100 3 90 17 2 0 1 0.5 0.75 2SC5606 (NE66219) 15 3.3 1.5 35 115 2 3 50 100 2 20 21 2 0 1 0.21 0.3 NE662M03 15 3.3 1.5 35 115 2 5 60 100 2 20 21 2 0 1 − 0.3 2SC5614 (NE856M13) 20 12 3 100 140 3 7 80 145 3 7 4.5 3 0 1 0.7 1.5 2SC5615 (NE681M13) 20 10 1.5 65 140 3 7 80 145 3 7 7 3 0 1 − 0.9 2SC5617 (NE685M13) 9 6 2 30 140 3 10 75 140 3 10 12 3 0 1 0.4 0.7 NE685M33 9 6 2 30 − 3 10 75 150 3 10 12 0.5 0 1 0.4 0.7 2SC5618 (NE687M13) 5 3 2 30 90 2 20 70 130 2 20 11 2 0 1 0.4 0.8 NE687M33 5 3 2 30 − 1 10 70 140 3 10 12 0.5 0 1 0.4 *1 *1 *1 Preliminary specification 24 *1 Selection Guide PU10015EJ03V0PF *1 0.8 Electrical Characteristics (TA = +25°C) S21e2 (dB) VCE (V) NF IC f (mA) (GHz) TYP. VCE (V) IC f (mA) (GHz) TYP. Rank Marking (hFE value) Outline Part Number Remarks MAX. 5 5 1 5 (MIN.) − − − − − EB, FB TA, TB F3TUSMM 2SC5431 (NE582M03) 3 7 1 10 3 7 1 1.4 2.5 EB, FB TC, TD F3TUSMM 2SC5432 (NE856M03) 3 7 1 12 3 7 1 1.4 2.7 EB, FB TE, TF F3TUSMM 2SC5433 (NE681M03) 3 5 2 7.5 3 5 2 1.9 3.2 EB, FB TH, TJ F3TUSMM 2SC5434 (NE680M03) 3 10 2 8.5 3 3 2 1.5 2.5 EB, FB TK, TL F3TUSMM 2SC5435 (NE685M03) 2 20 2 10 2 3 2 1.4 2.0 EB, FB TN, TP F3TUSMM 2SC5436 (NE687M03) 3 20 2 8 3 7 2 1.7 − EB, FB TS, TT F3TUSMM 2SC5437 (NE688M03) 3 20 2 12 3 5 2 1.5 2.5 FB R54 4MM 2SC5454 (NE67739) 3 30 2 10 3 7 2 1.5 2.5 FB R55 4MM 2SC5455 (NE67839) 2 5 2 17 2 2 2 1.1 1.5 FB T78 F4TSMM 2SC5507 (NE661M04) 2 20 2 17 2 5 2 1.1 1.5 FB T79 F4TSMM 2SC5508 (NE662M04) 2 50 2 11 2 10 2 1.3 1.7 FB T80 F4TSMM 2SC5509 (NE663M04) 2 20 2 12.5 2 5 2 1.2 1.5 FB UA 3USMM 2SC5606 (NE66219) 2 20 2 12.5 2 5 2 − 1.5 FB UA F3TUSMM 3 7 1 10 3 7 1 1.4 2.5 EB, FB C1, C2 3L2MM 2SC5614 (NE856M13) 3 7 1 12 3 7 1 1.4 2.7 EB, FB D1, D2 3L2MM 2SC5615 (NE681M13) 3 10 2 8.5 3 3 2 1.5 2.5 EB, FB Y1, Y2 3L2MM 2SC5617 (NE685M13) 3 10 2 8.5 3 3 2 1.5 2.5 FB − 2 20 2 10 2 3 2 1.3 − EB, FB W1, W2 2 20 2 10 2 3 2 1.3 2.5 FB − *1 *1 *1 *1 Selection Guide PU10015EJ03V0PF 3SLM2 NE662M03 NE685M33 3L2MM 2SC5618 (NE687M13) 3SLM2 NE687M33 25 (1) Low Noise Transistors (5/5) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) hFE Part Number VCBO (V) VCEO (V) VEBO (V) IC PT (mA) (mW) fT (GHz) Cre (pF) VCE (V) IC (mA) MIN. MAX. VCE (V) IC (mA) TYP. VCB (V) IE f (mA) (MHz) TYP. MAX. 2SC5667 (NE66719) 15 3.3 1.5 35 115 2 5 50 100 2 20 21 2 0 1 0.24 0.3 2SC5668 (NE667M03) 15 3.3 1.5 35 115 2 5 50 100 2 20 21 2 0 1 0.24 0.3 2SC5674 15 3.3 1.5 35 140 2 5 50 100 3 30 21 2 0 1 0.24 0.3 2SC5676 (NE863M03) 9 5.5 1.5 100 200 1 10 100 160 1 10 5.5 0.5 0 1 0.9 1.2 2SC5677 (NE863M13) 9 5.5 1.5 100 140 1 10 100 160 1 10 5.5 0.5 0 1 0.9 1.2 2SC5704 (NE662M16) 15 3.3 1.5 35 115 2 5 50 100 3 30 25 2 0 1 0.18 0.24 2SC5736 15 5 3 100 200 1 5 100 145 1 5 5 0.5 0 1 0.68 0.8 2SC5741 15 5 3 100 200 1 5 100 145 1 5 5 0.5 0 1 0.68 0.8 2SC5745 (NE819M03) 15 5.5 1.5 100 200 1 10 100 145 1 10 5.5 0.5 0 1 0.75 0.85 2SC5746 15 5.5 1.5 100 140 1 10 100 145 1 10 5.5 0.5 0 1 0.75 0.85 2SC5750 (NE67718) 9 6 2 50 200 3 20 75 150 3 20 15 3 0 1 0.26 0.5 2SC5751 (NE677M04) 9 6 2 50 205 3 20 75 150 3 20 15 3 0 1 0.22 0.5 2SC5752 (NE67818) 9 6 2 100 200 3 30 75 150 3 30 12 3 0 1 0.46 0.7 2SC5753 (NE678M04) 9 6 2 100 205 3 30 75 150 3 30 12 3 0 1 0.42 0.7 2SC5786 9 3 1.5 35 115 1 5 50 100 1 20 20 0.5 0 1 0.22 0.3 2SC5787 9 3 1.5 35 115 1 5 50 100 1 20 20 0.5 0 1 0.22 0.3 2SC5800 (NE851M03) 9 5.5 1.5 100 200 1 5 100 145 1 5 4.5 0.5 0 1 0.6 0.8 2SC5801 (ME851M13) 9 5.5 1.5 100 140 1 5 100 145 1 5 4.5 0.5 0 1 0.6 0.8 NE851M33 9 5.5 1.5 100 − 1 5 100 145 1 5 4.5 0.5 0 1 0.6 *1 *1 Preliminary specification 26 Selection Guide PU10015EJ03V0PF *1 0.8 Electrical Characteristics (TA = +25 °C) S21e2 (dB) VCE (V) NF IC f (mA) (GHz) TYP. VCE (V) IC f (mA) (GHz) TYP. Rank Marking (hFE value) Outline Part Number Remarks MAX. 2 20 2 11.5 2 5 2 1.1 1.5 FB UB 3USMM 2SC5667 (NE66719) 2 20 2 11.5 2 5 2 1.1 1.5 FB UB F3TUSMM 2SC5668 (NE667M03) 1 10 2 11 2 5 2 1.1 1.5 FB C5 3L2MM 2SC5674 1 10 2 4 1 10 2 1.8 3 FB UC F3TUSMM 1 10 2 4 1 10 2 1.8 3 FB D5 3L2MM 2SC5677 (NE863M13) 2 20 2 17 2 5 2 1.1 1.5 FB zC 6L2MM 2SC5704 (NE662M16) 1 5 2 4.5 1 5 2 2 3 FB TX F3TUSMM 1 5 2 4.5 1 5 2 2 3 FB TX 1 10 2 4.5 1 10 2 2 3 FB TY F3TUSMM 1 10 2 4.5 1 10 2 2 3 FB Y5 3L2MM 2SC5746 3 20 2 13 3 5 2 1.7 2.5 P−1, GL, ηC are specified FB R54 4SMM 2SC5750 (NE67718) 3 20 2 13.5 3 5 2 1.7 2.5 P−1, GL, ηC are specified FB R54 F4TSMM 2SC5751 (NE677M04) 3 30 2 10 3 7 2 1.7 2.5 P−1, GL, ηC are specified FB R55 4SMM 2SC5752 (NE67818) 3 30 2 10.5 3 7 2 1.7 2.5 P−1, GL, ηC are specified FB R55 F4TSMM 2SC5753 (NE678M04) 1 20 2 12 1 5 2 1.4 2.5 P−1 are specified FB UE F3TUSMM 2SC5786 1 20 2 13 1 5 2 1.4 2.5 P−1 are specified FB B7 3L2MM 2SC5787 1 5 2 4 1 10 2 1.9 2.5 FB 80 F3TUSMM 1 5 2 4 1 10 2 1.9 2.5 FB E7 3L2MM 2SC5801 (NE851M13) 1 5 2 4 1 10 2 1.9 2.5 FB − 3SLM2 NE851M33 *1 *1 Selection Guide PU10015EJ03V0PF 2SC5676 (NE863M03) 2SC5736 3USMM 2SC5741 2SC5745 (NE819M03) 2SC5800 (NE851M03) 27 (2) SiGe HBT Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) hFE Part Number VCBO (V) VCEO (V) VEBO (V) IC PT (mA) (mW) fT (GHz) Cre (pF) VCE (V) IC (mA) MIN. MAX. VCE (V) IC (mA) TYP. VCB (V) IE f (mA) (MHz) TYP. MAX. 2SC5761 (NESG2030M04) 8 1.2 2.3 35 80 2 5 200 400 − − − 2 0 1 0.17 0.22 NESG2021M05 13 5 1.5 35 175 2 5 130 260 − − − 2 0 1 0.1 − NESG2031M05 13 5 1.5 35 175 2 5 130 260 − − − 2 0 1 0.15 − NESG2101M05 13 5 1.5 100 500 2 5 130 260 − − − 2 0 1 0.4 − (3) Medium Output Power Transistors Absolute Maximum Ratings (TA = +25°C) Part Number VCBO (V) VCER VCEO VEBO (V) (V) (V) R = 10 Ω Electrical Characteristics (TA = +25°C) Pout (dBm) IC PT (A) (mW) ηc (%) P1dB (dBm) f VCC Pin f Iq VCE f Pin Iq VCE (MHz) (V) (dBm) MIN. TYP. (GHz) (mA) (V) TYP. (GHz) (dBm) (mA) (V) TYP. 2SC5288 (NE68939) 9 − 6 2 150 200 − − − − − 1.9 1 3.6 24 1.9 − 1 3.6 60 2SC5289 (NE69039) 9 − 6 2 300 200 − − − − − 1.9 1 3.6 27 1.9 − 1 3.6 70 2SC5754 (NE664M04) 13 − 5 1.5 500 215 − − − − − 1.8 20 3.6 26 1.8 15 4 3.6 60 (4) Middle-Power LD-MOS FETs Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) VGS(OFF) (V) Part Number gm (S) Pout (dBm) VDS (V) VGS (V) ID (A) Ptot (W) NE5500179A 20.0 5.0 0.25 10 4.8 1 1.0 2.0 4.8 0.25 − 0.42 1.9 4.8 200 20 28.5 30.0 NE5500479A 20.0 5.0 1.0 10 4.8 1 1.0 2.0 4.8 0.6 − 1.43 0.9 3.5 300 20 30.5 31.5 NE5510279A 20.0 5.0 1.0 20 4.8 1 1.0 2.0 4.8 0.6 − 1.5 1.8 4.8 300 25 32.0 33.0 NE5520279A 15.0 5.0 0.6 12.5 3.5 1 1.0 1.9 3.2 0.7 − 1.3 1.8 3.2 700 25 30.5 32.0 NE5520379A 15.0 5.0 1.5 20 3.5 1 1.0 2.0 3.5 0.8 0.2 − 25 31.0 33.0 NE552R479A 15.0 5.0 0.3 10 3.5 1 1.0 1.9 3.5 0.1 − 0.4 2.45 3.0 200 19 24.0 26.0 NE552R679A 15.0 5.0 0.35 10 3.5 1 1.0 1.9 3.0 0.3 − 0.6 0.46 3.0 300 15 26.0 28.0 28 VDS ID VDS (V) (mA) MIN. MAX. (V) ID (A) f VDS ∆ID (mA) MIN. (GHz) (V) 2.5 1.785 3.2 Selection Guide PU10015EJ03V0PF IDQ (mA) Pin (dBm) MIN. TYP. Electrical Characteristics (TA = +25 °C) S21e2 (dB) VCE (V) NF IC f (mA) (GHz) TYP. VCE (V) Rank Marking (hFE value) Outline Part Number Remarks IC f (mA) (GHz) TYP. MAX. 2SC5761 (NESG2030M04) 2 20 2 18 2 5 2 0.9 1.1 FB T16 F4TSMM 3 10 2 19.0 2 3 5.2 1.3 − FB T1G F4TSMM NESG2021M05 3 20 2 18.0 2 5 5.2 1.3 − FB T1H F4TSMM NESG2031M05 3 50 2 13.5 2 10 2 0.9 − FB T1J F4TSMM NESG2101M05 Electrical Characteristics (TA = +25°C) GL (dB) IM3 (dBC) Function Marking Outline Part Number f Pin Iq VCC f VCC Iq ∆f (GHz) (dBm) (mA) (V) TYP. (GHz) (kHz) (V) (mA) TYP. 1.9 − 1 3.6 8 − − − − − T89 4MM 2SC5288 (NE68939) 1.9 − 1 3.6 6 − − − − − T90 4MM 2SC5289 (NE69039) 1.8 15 20 3.6 12 − − − − − R57 F4TSMM 2SC5754 (NE664M04) Electrical Characteristics (TA = +25°C) ηD (%) f VDS (GHz) (V) IDQ (mA) GL (dB) Pin f VDS (dBm) MIN. TYP. (GHz) (V) IDQ (mA) Marking Outline Part Number Pin (dBm) MIN. TYP. 1.9 4.8 200 20 48 55 1.9 4.8 200 10 − 14.0 R1 79A NE5500179A 0.9 3.5 300 20 55 62 0.9 3.5 300 10 − 15.0 R4 79A NE5500479A 1.8 4.8 300 25 38 47 1.8 4.8 300 10 − 10.0 W2 79A NE5510279A 1.8 3.2 700 25 40 45 1.8 3.2 800 5 − 10 A2 79A NE5520279A 1.785 3.2 − 25 − 35 1.785 3.2 − 10 − 8.5 A3 79A NE5520379A 24.5 3.0 200 19 35 45 2.45 3.0 300 10 − 11 AW 79A NE552R479A 0.46 3.0 300 15 55 60 0.46 3.0 300 5 − 20 AU 79A NE552R679A Selection Guide PU10015EJ03V0PF 29 (5) High-Power LD-MOS FETs Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) VGS(OFF) (V) Part Number NEM090303M-28 VDS (V) VGS (V) ID (A) Ptot (W) 65 +7 8 79.5 gm (S) VDS ID VDS (V) (mA) MIN. MAX. (V) 10 1 1.0 2.0 28 ID (A) 0.25 Pout (dBm) f VDS ∆ID (mA) MIN. (GHz) (V) − -10 1.8 0.96 28 IDQ (mA) 250 Pin (dBm) MIN. TYP. 28 45 46.5 (TYP.) (6) Dual Gate MOS FETs Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) Part VDSS(IDSX) (mA) VG1S(OFF) (V) VG2S(OFF) (V) yfs (mS) Ciss (pF) Number VDSX VG1S VG2S PT VDS VG2S ID VDS VG1S ID VDS VG2S ID VDS VG2S (V) (V) (V) (mW) VDS VG2S VG1S (V) (V) (V) MIN. MAX. (V) (V) (µA) MIN. MAX. (V) (V) (µA) MIN. MAX. (V) (V) (mA) MIN. TYP. (V) (V) 3SK222 18 (NE92039) ±8 ±8 200 3SK254 18 (BE93218) ±8 3SK255 18 (NE93318) ±8 6 3 0.75 0.01 8.0 ±8 150 3.5 3 ±8 150 3.5 3 6 3 10 0.5 0.1 5.0 3.5 3 0.5 0.5 7.0 3.5 3 0 +1.0 6 3 10 0 +1.0 10 −1.0 +1.0 3.5 3 10 0 10 −1.0 +1.0 3.5 3 10 0 5 4 10 15 19.5 6 3 +1.0 3.5 3 7 14 23 3.5 3 +1.0 3.5 3 7 14 24 3.5 3 (7) Dual Gate GaAs FETs Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) Part IDSS(IDSX) (mA) VG1S(off) (V) VG2S(off) (V) yfs (mS) Ciss (pF) Number VDSX VG1S VG2S PT VDS VG2S ID VDS VG1S ID VDS VG2S ID VDS VG2S (V) (V) (V) (mW) VDS VG2S VG1S (V) (V) (V) MIN. MAX. (V) (V) (µA) MIN. MAX. (V) (V) (µA) MIN. MAX. (V) (V) (mA) MIN. TYP. (V) (V) 3SK299 13 −4.5 −4.5 120 (NE25118) 30 5 0 0 5 40 5 0 100 − −3.5 5 0 Selection Guide PU10015EJ03V0PF 100 − −3.5 5 1 10 18 25 5 1 Electrical Characteristics (TA = +25°C) ηD (%) f VDS (GHz) (V) 0.96 28 IDQ (mA) GL (dB) Pin f VDS (dBm) MIN. TYP. (GHz) (V) 250 28 50 63 0.96 28 IDQ (mA) 250 Marking Outline − 3M Part Number Pin (dBm) MIN. TYP. 18 18.5 20 NEM090303M-28 Electrical Characteristics (TA = +25°C) Ciss (pF) COSS (pF) Cps (dB) NF (dB) Part Marking Outline Number (IDSS, IDSX) ID VDS VG2S ID VDS VG2S ID f VDS VG2S ID f (mA) MIN. TYP. MAX. (V) (V) (mA) MIN. TYP. MAX. (V) (V) (mA) (MHz) MIN. TYP. (V) (V) (mA) (MHz) TYP. MAX. 10 3.6 4.3 5.0 7 7 6 3 10 1.0 1.5 2.0 2.4 2.9 3.4 3.5 3 7 1.2 1.7 2.2 3.5 3 7 6 4MM 3SK222 (NE92039) 470 2.0 3.0 U1E 4SMM 3SK254 (NE93218) 900 1.8 3.0 U1G 4SMM 3SK255 (NE93318) 4 10 200 21 23 6 4 10 200 1.2 2.0 V21, V22 0.9 1.2 1.5 3.5 3 7 470 16 19 3.5 3 7 0.5 1.0 1.5 3.5 3 7 900 15 18 3.5 3 7 Electrical Characteristics (TA = +25°C) Ciss (pF) CrOSS (pF) Cps (dB) NF (dB) Part Marking Outline Number (IDSS, IDSX) ID VDS VG2S ID VDS VG2S ID f VDS VG2S ID f (mA) MIN. TYP. MAX. (V) (V) (mA) MIN. TYP. MAX. (V) (V) (mA) (MHz) MIN. TYP. (V) (V) (mA) (MHz) TYP. MAX. 10 0.5 1.0 1.5 5 1 10 − 0.02 0.03 5 1 10 900 16 20 5 Selection Guide PU10015EJ03V0PF 1 10 900 1.1 2.5 U71,U72,U73,U74 4SMM 3SK299 (NE25118) 31 (8) Twin Transistors (1/2) Four types of packages suitable for reducing the size of sets are available. Absolute Maximum Ratings (TA = +25°C) Part Number Internal Transistor Electrical Characteristics (TA = +25°C) hFE VCBO (V) VCEO (V) VEBO (V) PT (mW) IC (mA) VCE (V) IC (mA) fT (GHz) MIN. MAX. VCE (V) IC (mA) Cre (pF) TYP. VCB (V) IE f (mA) (MHz) µPA800T 2SC5434 20 10 1.5 200 35 3 5 80 200 3 5 8.0 3 0 1 µPA801T 2SC5432 20 12 3 200 100 3 7 70 250 3 7 4.5 3 0 1 µPA801TC 2SC5432 20 12 3 230 100 3 7 70 250 3 7 4.5 3 0 1 µPA802T 2SC5433 20 10 1.5 200 65 3 7 70 240 3 7 7.0 3 0 1 µPA802TC 2SC5433 20 10 1.5 230 65 3 7 70 150 3 7 7.0 3 0 1 µPA803T 2SC5005 20 12 3 160 30 5 5 60 200 5 5 5.5 5 0 1 µPA804T 2SC5431 20 12 3 160 60 5 5 60 200 5 5 5 5 0 1 µPA805T 2SC5009 9 6 2 120 10 3 5 75 150 3 7 12 3 0 1 µPA806T 2SC5435 9 6 2 200 30 3 10 75 150 3 10 12 3 0 1 µPA807T 2SC5181 5 3 2 60 10 2 7 70 140 2 7 13 2 0 1 µPA808T 2SC5436 5 3 2 180 30 2 20 70 140 2 20 11 2 0 1 µPA808TC 2SC5436 5 3 2 180 30 2 20 70 140 2 20 11 2 0 1 µPA809T 2SC5437 9 6 2 200 100 1 3 80 160 3 20 9.0 1 0 1 µPA810T 2SC5432 20 12 3 200 100 3 7 70 250 3 7 4.5 3 0 1 µPA811T 2SC5434 20 10 1.5 200 35 3 5 80 250 3 5 − 3 0 1 µPA812T 2SC5433 20 10 1.5 200 65 3 7 70 240 3 7 7 3 0 1 µPA813T 2SC5005 20 12 3 160 30 5 5 60 200 5 5 5.5 5 0 1 µPA814T 2SC5437 9 6 2 200 100 1 3 80 160 3 20 9 1 0 1 µPA828TC 2SC5436 5 3 2 180 30 2 20 70 140 2 20 11 2 0 1 Q1:2SC5432 20 12 3 230 100 3 7 70 140 3 7 4.5 3 0 1 Q2:2SC5433 20 10 1.5 230 65 3 7 70 150 3 7 7 3 0 1 Q1:2SC5435 9 6 2 210 30 3 10 75 150 3 10 12 3 0 1 µPA831TC µPA841TD µPA844TC µPA850TD µPA851TD µPA854TD µPA855TD 32 Q2:2SC5600 9 5.5 1.5 210 100 1 5 100 160 1 5 5 0.5 0 1 Q1:2SC5436 5 3 2 205 30 2 20 70 140 2 20 11 2 0 1 Q2:2SC5668 15 3.3 1.5 205 35 2 5 50 100 2 20 21 2 0 1 Q1:2SC5435 9 6 2 210 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5736 15 5 3 210 100 1 5 100 145 1 5 5.0 0.5 0 1 Q1:2SC5737 5 3 2 210 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5736 15 5 3 210 100 1 5 100 145 1 5 5.0 0.5 0 1 Q1:2SC5435 9 6 2 210 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5745 15 5.5 1.5 210 100 1 10 100 145 1 10 5.5 0.5 0 1 Q1:2SC5737 5 3 2 210 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5745 15 5.5 1.5 210 100 1 10 100 145 1 10 5.5 0.5 0 1 Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) |S21e|2 (dB) Cre (pF) NF (dB) IC f (mA) (GHz) MIN. VCE (V) Rank IC f (mA) (GHz) TYP. Marking Pin Configration Outline Part Number TYP. MAX. VCE (V) 0.3 0.7 1 3 2 4.5 1 3 2 1.9 3.2 KB RL Type 1 6SMM µPA800T 0.7 1.5 3 7 1 7 3 7 1 1.2 2.5 FB, GB R24, R25 Type 1 6SMM µPA801T 0.7 1.5 3 7 1 7 3 7 1 1.2 2.5 FB, GB 70, 71 Type 1 F6TUSMM µPA801TC − 0.9 3 7 1 10 3 7 1 1.4 1.7 FB, GB R34, R35 Type 1 6SMM − 0.9 3 7 1 10 3 7 1 1.4 1.7 FB 3A Type 1 F6TSMM µPA802TC 0.7 0.9 5 5 1 5 − − − − − FB, GB T73, T74 Type 1 6SMM µPA803T 0.9 1.2 5 5 1 5 − − − − − FB, GB T76, T77 Type 1 6SMM µPA804T 0.3 0.5 3 5 2 7 3 3 2 2.5 4 KB T82 Type 1 6SMM µPA805T 0.4 0.7 3 10 2 7 3 3 2 1.5 2.5 KB T83 Type 1 6SMM µPA806T 0.4 0.6 2 7 2 7.5 2 3 2 1.5 2 KB T84 Type 1 6SMM µPA807T 0.4 0.8 2 20 2 7 2 3 2 1.3 2 KB T86 Type 1 6SMM µPA808T 0.4 0.8 2 20 2 7 2 3 2 1.3 2 FB 3C Type 1 F6TUSMM µPA808TC 0.75 0.85 1 3 2 2.5 1 3 2 1.7 2.5 KB T88 Type 1 6SMM µPA809T 0.7 1.5 3 7 1 7 3 7 1 1.2 2.5 FB, GB 24R, 25R Type 2 6SMM µPA810T − 0.7 3 5 2 5.5 3 5 2 1.9 3.2 FB, GB 44R, 45R Type 2 6SMM µPA811T − 0.9 3 7 1 10 3 7 1 1.4 2.7 FB, GB 34R, 35R Type 2 6SMM µPA812T MAX. µPA802T 0.7 0.9 5 5 1 5 − − − − − FB, GB 73T, 74T Type 2 6SMM µPA813T 0.75 0.85 3 20 2 − 3 7 2 1.5 − KB 88T Type 2 6SMM µPA814T 0.4 0.8 2 20 2 7 2 3 2 1.3 2 KB 4E Type 3 F6TUSMM µPA828TC 0.7 1.5 3 7 1 7 3 7 1 1.2 2.5 − 0.9 3 7 1 10 3 7 1 1.4 2.7 FB 24 Type 4 F6TUSMM µPA831TC − 0.9 3 7 1 10 3 7 1 1.4 2.7 0.4 0.7 3 10 2 7 3 3 2 1.5 2.5 0.8 1 1 5 2 3.5 1 5 2 1.5 2.5 FB nQ Type 4 6L2MM µPA841TD 0.4 0.8 2 20 2 7 2 3 2 1.3 2 0.24 0.3 2 20 2 9.5 2 5 2 1.1 1.5 FB 2D Type 4 F6TUSMM µPA844TC 0.4 0.7 3 10 2 7 3 10 2 1.5 2.5 0.59 0.75 1 5 2 4.5 1 5 2 2.0 3.0 FB vF Type 4 6L2MM µPA850TD FB vH Type 4 6L2MM µPA851TD FB vL Type 4 6L2MM µPA854TD FB vN Type 4 6L2MM µPA855TD 0.4 0.7 1 10 2 7 1 3 2 1.5 2 0.59 0.75 1 5 2 4.5 1 5 2 2.0 3.0 0.4 0.7 3 10 2 7 3 10 2 1.5 2.5 0.75 0.85 1 10 2 4.0 1 10 2 2.0 3.0 0.4 0.7 1 10 2 7 1 3 2 1.5 2 0.75 0.85 1 10 2 4.0 1 10 2 2.0 3.0 Selection Guide PU10015EJ03V0PF 33 (8) Twin Transistors (2/2) Absolute Maximum Ratings (TA = +25°C) Part Number µPA859TD µPA860TC µPA860TD µPA861TC µPA861TD µPA862TC µPA862TD µPA862TS µPA863TC µPA863TD Internal Transistor Electrical Characteristics (TA = +25°C) hFE VCBO (V) VCEO (V) VEBO (V) PT (mW) IC (mA) fT (GHz) Cre (pF) VCE (V) IC (mA) MIN. MAX. VCE (V) IC (mA) TYP. VCB (V) IE f (mA) (MHz) Q1:2SC5737 5 3 2 210 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5676 9 5.5 1.5 210 100 1 10 100 160 1 10 5.5 0.5 0 1 Q1:2SC5435 9 6 2 230 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5786 9 3 1.5 230 35 1 5 50 100 1 20 20 0.5 0 1 Q1:2SC5435 9 6 2 210 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5786 9 3 1.5 210 35 1 5 50 100 1 20 20 0.5 0 1 Q1:2SC5436 5 3 2 195 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5786 9 3 1.5 195 35 1 5 50 100 1 20 20 0.5 0 1 Q1:2SC5436 5 3 2 195 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5786 9 3 1.5 195 35 1 5 50 100 1 20 20 0.5 0 1 Q1:2SC5435 9 6 2 230 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5800 9 5.5 1.5 230 100 1 5 100 145 1 5 4.5 0.5 0 1 Q1:2SC5435 9 6 2 210 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5800 9 5.5 1.5 190 100 1 5 100 145 1 5 4.5 0.5 0 1 Q1:2SC5435 9 6 2 130 30 3 10 75 150 3 10 12 3 0 1 Q2:2SC5800 9 5.5 1.5 130 100 1 5 100 145 1 5 4.5 0.5 0 1 Q1:2SC5436 5 3 2 230 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5800 9 5.5 1.5 230 100 1 5 100 145 1 5 4.5 0.5 0 1 Q1:2SC5436 5 3 2 210 30 1 10 70 140 1 10 12 0.5 0 1 Q2:2SC5800 9 5.5 1.5 210 100 1 5 100 145 1 5 4.5 0.5 0 1 Q1:2SC5436 5 3 2 130 30 2 20 70 140 2 20 11 2 0 1 Q2:2SC5800 9 5.5 1.5 130 100 1 5 100 145 1 5 4.5 0.5 0 1 µPA872TD 2SC5676 9 5.5 1.5 210 100 1 10 100 160 1 10 5.5 0.5 0 1 µPA873TC 2SC5800 9 5.5 1.5 230 100 1 5 100 145 1 5 4.5 0.5 0 1 µPA873TD 2SC5800 9 5.5 1.5 190 100 1 5 100 145 1 5 4.5 0.5 0 1 µPA873TS 2SC5800 9 5.5 1.5 130 100 1 5 100 145 1 5 4.5 0.5 0 1 µPA891TC 2SC5600 9 5.5 1.5 230 100 1 5 100 160 1 5 5 0.5 0 1 µPA891TD 2SC5600 9 5.5 1.5 210 100 1 5 100 160 1 5 5 0.5 0 1 µPA892TC 2SC5668 15 3.3 1.5 230 35 2 5 50 100 2 20 21 2 0 1 µPA892TD 2SC5668 15 3.3 1.5 210 35 2 5 50 100 2 20 21 2 0 1 µPA895TD 2SC5800 9 5.5 1.5 190 100 1 5 100 145 1 5 4.5 0.5 0 1 µPA895TS 2SC5800 9 5.5 1.5 130 100 1 5 100 145 1 5 4.5 0.5 0 1 µPA863TS 34 Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) |S21e|2 (dB) Cre (pF) NF (dB) IC f (mA) (GHz) MIN. VCE (V) Rank TYP. MAX. VCE (V) IC f (mA) (GHz) TYP. 0.4 0.7 1 10 2 7 1 3 2 1.5 2 0.9 1.2 1 10 2 2.5 1 10 2 1.8 3 Marking Pin Configration Outline Part Number MAX. 0.4 0.7 3 10 2 7 3 3 2 1.5 2.5 0.22 0.3 1 20 2 10 1 5 2 1.4 2.5 FB vT Type 4 6L2MM µPA859TD FB 2X Type 4 F6TUSMM µPA860TC FB vV Type 4 6L2MM µPA860TD FB 2Y Type 4 F6TUSMM µPA861TC FB vX Type 4 6L2MM µPA861TD FB 5A Type 4 F6TUSMM µPA862TC FB vY Type 4 6L2MM µPA862TD FB vY Type 4 6SLM2 µPA862TS FB 5B Type 4 F6TUSMM µPA863TC FB xC Type 4 6L2MM µPA863TD FB xC Type 4 6SLM2 µPA863TS 0.4 0.7 3 10 2 7 3 3 2 1.5 2.5 0.22 0.3 1 20 2 11 1 5 2 1.4 2.5 0.4 0.8 1 10 2 7 1 3 2 1.5 2 0.22 0.3 1 20 2 10 1 5 2 1.4 2.5 0.4 0.8 1 10 2 7 1 3 2 1.5 2 0.22 0.3 1 20 2 11 1 5 2 1.4 2.5 0.4 0.7 3 10 2 7 3 3 2 1.5 2.5 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 0.4 0.7 3 10 2 7 3 3 2 1.5 2.5 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 0.4 0.7 3 10 2 7 3 10 2 1.5 2.5 0.6 0.8 1 5 2 3.0 1 10 2 1.9 2.5 0.4 0.7 1 10 2 7 1 3 2 1.3 2 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 0.4 0.7 1 10 2 7 1 3 2 1.3 2 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 0.4 0.8 2 20 2 7 2 3 2 1.3 2 0.6 0.8 1 5 2 3.0 1 10 2 1.9 2.5 0.9 1.2 1 10 2 2.5 1 10 2 1.8 3 FB cD Type 1 6L2MM µPA872TD 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 FB 3F Type 1 F6TUSMM µPA873TC 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 FB cP Type 1 6L2MM µPA873TD 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 FB cP Type 1 6SLM2 µPA873TS 0.8 1 1 5 2 3.5 1 5 2 1.5 2.5 FB 4B Type 3 F6TUSMM µPA891TC 0.8 1 1 5 2 3.5 1 5 2 1.5 2.5 FB kH Type 3 6L2MM µPA891TD 0.24 0.3 2 20 2 9.5 2 5 2 1.1 1.5 FB 4C Type 3 F6TUSMM µPA892TC 0.24 0.3 2 20 2 9.5 2 5 2 1.1 1.5 FB kN Type 3 6L2MM µPA892TD 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 FB kP Type 3 6L2MM µPA895TD 0.6 0.8 1 5 2 3 1 10 2 1.9 2.5 FB kP Type 3 6SLM2 µPA895TS Selection Guide PU10015EJ03V0PF 35 (9) Prescalers A range of prescalers classified by system, division ratio, pin layout, and package are provided by NEC Compound Semiconductor Devices, Ltd. The lineup features prescalers with frequency characteristics ideal for devices such as mobile communication equipment and BS/CS tuners, as well as those employing a 4.45 mm SSOP package. Tree Diagram of Prescaler Supply Voltage: 3 V Divide by 2, 4 µ PB1511TB (to 800 MHz) Divide by 2, 4, 8 µ PB1509GV (to 1.0 GHz) Divide by 2 µ PB1508GV (to 3.0 GHz) Divide by 4 µ PB1510GV (to 3.0 GHz) for Mobile Communications (to 2 GHz) Prescalers Supply Voltage: 5 V for BS/CS Tuners (to 3 GHz) µ PB1507GV (to 3.0 GHz) Divide by 64, 128, 256 Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (VCC = 5 V, TA = +25°C) fin(u)1 (GHz) Part Number VCC (V) Vin (V) PD (mW) TA (°C) Pin (dBm) MIN. fin(u)2 (GHz) fin(l)1 (GHz) fin(l)2 (GHz) Pin1 (dBm) Pin (dBm) MIN. Pin (dBm) MAX. Pin (dBm) MAX. fin (GHz) − − −10 to +6 0.5 −15 to +6 1.0 1.0 to 3.0 −15 +6 −15 to +6 2.7 −15 to +6 0.5 − − 2.7 to 3.0 −10 +6 0.5 0.05 to 1.0 −20 −5 µPB1507GV −0.5 to 6 −0.5 to VCC +0.5 250 −40 to +85 −15 to +6 3.0 µPB1508GV 6 6 250 −40 to +85 −10 to +6 3.0 µPB1509GV 6 6 250 −40 to +85 −20 to 0 0.5 −20 to −5 0.7 −20 to 0 0.05 −20 to −5 µPB1510GV 6 6 250 −40 to +85 −10 to +6 3.0 −15 to +6 2.7 −15 to +6 0.5 µPB1511TB 3.6 3.6 270 −40 to +85 −20 to 0 −20 to −5 0.7 −20 to 0 0.05 −20 to −5 MIN. MAX. *1 *1 *2 *1 *1 0.5 − *1 TA = +85°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) *2 VCC = 2.2 to 5.5 V 36 Selection Guide PU10015EJ03V0PF − 2.7 to 3.0 −10 +6 0.5 0.05 to 0.8 −20 −5 Electrical Characteristics (VCC = 5 V, TA = +25°C) Pin2 (dBm) fin (GHz) Pin3 (dBm) MIN. MAX. fin (GHz) Pout (dBm) MIN. MAX. Outline Part Number fin Pin (GHz) (dBm) MIN. TYP. MIN. TYP. MAX. −10 1.2 to +6 VP-P 1.6 12.5 VP-P 19 26.5 3.0 GHz Divide-by-64, 128, 256 prescaler 8SSOP µPB1507GV −12 −7 7.0 10 14.5 3.0 GHz Divide-by-2 prescaler 8SSOP µPB1508GV −20 to 0 0.1 VP-P 0.2 VP-P 3.5 5.0 5.9 1.0 GHz Divide-by-2, 4, 8 prescaler 8SSOP µPB1509GV 2 0 −12 −7 − 15 − 3.0 GHz Divide-by-4 prescaler 8SSOP µPB1510GV 0.05 to 0.8 −20 to 0 0.2 VP-P 0.3 VP-P 3.1 3.5 4.1 800 MHz Divide-by-2, 4 prescaler 6SMM µPB1511TB 0.5 to 1.0 −10 +6 − − − 0.5 to 3.0 0.5 to 2.7 −15 +6 − − − 2 0 0.05 to 0.5 −20 0 − − − 0.05 to 1.0 0.5 to 2.7 −15 +6 − − − −20 0 − − − 0.05 to 0.5 Function ICC (mA) Selection Guide PU10015EJ03V0PF 37 (10) High-Frequency Amplifiers (1/2) In response to a variety of marketplace demands, NEC Compound Semiconductor Devices, Ltd. has made available a series of high-frequency amplifier ICs that includes an abundant product lineup. The package range also features a selection ideal for slim and compact applications. Tree Diagram of High-Frequency Amplifier 5V µPC1678 µPC2708 to µPC2710 µPC2776 3V µPC2762/µ PC2763 µPC2771 µPC8181/µPC8182 5V µPC1675/µPC1676 µPC1688 µPC2711/µPC2712 µPC3215 3V µPC2745 to µPC2749 Medium output Amp. High-Frequency Amplifier Wideband Amp. µPC2726 Differential Amp. Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25 °C) ICC (mA) Part Number VCC PD (V) (mW) TA (°C) *2 *1 GP (dB) fu (GHz) NF (dB) ISL (dB) VCC f VCC f f VCC (V) MIN. TYP. MAX. MIN. TYP. (V) (GHz) MIN. TYP MAX. (V) (GHz) TYP. MAX. (GHz) MIN. µPC1675G 6 200 −40 to +85 5 12 17 22 1.6 1.9 5 0.5 10 12 14 5 0.5 5.5 7.0 0.5 21 µPC1676G 6 200 −40 to +85 5 14 19 24 1.0 1.2 5 0.5 19 22 24 5 0.5 4.5 6.0 0.5 24 µPC1678GV 6 360 −45 to +85 5 40 49 60 1.7 2.0 5 0.5 21 23 25 5 0.5 6.0 8.0 0.5 30 µPC1688G 6 200 −40 to +85 5 14 19 24 0.9 1.1 5 0.5 18 21 23 5 0.5 4.0 5.5 0.5 23 µPC2708TB 6 270 −40 to +85 5 20 26 33 2.7 2.9 5 1 13 15 18.5 5 1.0 6.5 8.0 1 18 µPC2709T µPC2709TB 6 280 −40 to +85 270 5 19 25 32 2.0 2.3 5 1 21 23 26.5 5 1.0 5 6.5 1 26 µPC2710TB 5.8 270 −40 to +85 5 16 22 29 0.7 1.0 5 0.5 30 33 36.5 5 1.0 3.5 5.0 0.5 34 µPC2711TB 6 270 −40 to +85 5 9 12 15 2.7 2.9 5 1 11 13 16.5 5 1.0 5 6.5 1 25 µPC2712T µPC2712TB 6 280 −40 to +85 270 5 9 12 15 2.2 2.6 5 1 18 20 23.5 5 1.0 4.5 6 1 28 µPC2726T 6 280 −40 to +85 5 8 11.5 15 1.0 1.6 5 0.4 11 15 17 5 0.4 4.5 6.0 0.4 − *3 *3 *3 *3 *3 *3 *3 *1 No input signal *2 Upper limit of operating frequency *3 TA = +85°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) 38 Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) ISL (dB) RLin (dB) RLout (dB) PO (dBm) Remarks Outline Part Number f f f Pin TYP. (GHz) MIN. TYP. (GHz) MIN. TYP. (GHz) (dBm) MIN. TYP. 25 0.5 9 12 0.5 8 11 0.5 0 2 4 4MM µPC1675G 28 0.5 9 12 0.5 6 9 0.5 0 3 5 4MM µPC1676G 35 0.5 11 14 0.5 1 4 0.5 Inductor must be externally equipped with VCC +3 +15.5 +17.5 and output pins 27 0.5 10 13 0.5 10 13 0.5 −5 2 4 23 1 8 11 1 16 20 1 0 +7.5 +10 Inductor must be externally equipped with VCC and output pins. 6SMM µPC2708TB 31 1 7 10 1 7 10 1 0 +9 +11.5 Inductor must be externally equipped with VCC and output pins. 6MM µPC2709T 6SMM µPC2709TB 39 0.5 3 6 0.5 9 12.0 0.5 −8 +11 +13.5 Inductor must be externally equipped with VCC and output pins. 6SMM µPC2710TB 30 1 20 25 1 9 12.0 1 0 −2 +1 6SMM µPC2711TB 33 1 9 12 1 10 13.0 1 −2 0 +3 6MM µPC2712T 6SMM µPC2712TB 60 0.4 − 2.0 0.4 − 4.0 0.4 −10 −5 −2 8SSOP µPC1678GV 4MM Only µPC2726T is designed as differential amplifier. ISL = 60 dB TYP. Selection Guide PU10015EJ03V0PF 6MM µPC1688G µPC2726T 39 (10) High-Frequency Amplifiers (2/2) Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) ICC (mA) Part Number VCC PD (V) (mW) TA (°C) *1 GP (dB) *2 NF (dB) VCC VCC f VCC f f (V) MIN. TYP. MAX. MIN. TYP. (V) (GHz) MIN. TYP. MAX. (V) (GHz) TYP. MAX. (GHz) MIN. *3 µPC2745TB 4 270 −40 to +85 µPC2746TB 4 270 −40 to +85 µPC2747TB 4 270 −40 to +85 µPC2748TB 4 270 −40 to +85 µPC2749TB 4 270 −40 to +85 µPC2762TB 3.6 270 −40 to +85 µPC2763TB 3.6 270 −40 to +85 µPC2771TB 3.6 270 −40 to +85 µPC2776TB 6 270 −40 to +85 µPC3215TB 6 270 −40 to +85 µPC8181TB 3.6 270 −40 to +85 µPC8182TB 3.6 270 −40 to +85 3 5 7.5 10 2.3 2.7 3 0.5 9 12 14 3 0.5 6 7.5 0.5 33 3 5 7.5 10 1.1 1.5 3 0.5 16 19 21 3 0.5 4.0 5.5 0.5 40 3 3.8 5 7 1.5 1.8 3 0.9 9 12 14 3 0.9 3.3 4.5 0.9 35 3 4.5 6 8 1.2 1.5 3 0.9 16 19 21 3 0.9 2.8 4.0 0.9 35 3 4 6 8 2.5 2.9 3 1.9 13 16 18.5 3 1.9 4.0 5.5 1.9 25 3 − 26.5 35 2.7 2.9 3 0.9 1.9 11 13 16 11.5 14.5 17.5 3 0.9 1.9 6.5 7.0 8.0 8.5 0.9 1.9 22 20 3 − 27 35 2.0 2.4 3 0.9 1.9 18 20 23 16.5 19.5 22.5 3 0.9 1.9 5.5 5.5 7.0 7.0 0.9 1.9 25 24 3 − 36 45 1.7 2.1 3 0.9 1.5 19 17 21 20 24 23 3 0.9 1.5 6.0 6.0 7.5 7.5 0.9 1.5 25 25 5 18 25 33 2.3 2.7 5 1.0 21 23 26 5 1.0 6.0 7.5 1.0 27 5 10.5 14 17.5 2.5 2.9 5 1.5 − 5 1.5 2.3 3.0 1.5 39 3 − 23 30 − 4.0 3 3 − 30 38 2.6 2.9 3 0.9 1.9 2.4 0.9 1.9 2.4 4.5 4.5 4.5 4.5 4.5 5.0 6.0 6.0 6.0 6.0 6.0 6.5 0.9 1.9 2.4 0.9 1.9 2.4 28 27 26.5 28 27 26 *3 *3 *3 *3 *3 *3 *3 *3 *3 *3 *3 0.9 1.9 2.4 0.9 1.9 2.4 18.5 20.5 16 18 19 19 18 18 19 21 22 21.5 20.5 20.5 22 24 25 25 24 24 3 3 *1 No input signal *2 Upper limit of operating frequency *3 TA = +85°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) 40 ISL (dB) fu (GHz) Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) ISL (dB) RLin (dB) RLout (dB) PO(sat) (dBm) Remarks Outline Part Number f f f Pin TYP. (GHz) MIN. TYP. (GHz) MIN. TYP. (GHz) (dBm) MIN. TYP. 38 0.5 8 11 0.5 2.5 5.5 0.5 −6 −4 −1 6SMM µPC2745TB 45 0.5 10 13 0.5 5.5 8.5 0.5 −6 −3 0 6SMM µPC2746TB 40 0.9 11 14 0.9 7 10 0.9 −8 +9.5 −7 6SMM µPC2747TB 40 0.9 8.5 11.5 0.9 5.5 8.5 0.9 −8 −6 −3.5 6SMM µPC2748TB 30 1.9 7 10 1.9 9.5 12.5 1.9 −6 −9 −6 6SMM µPC2749TB 27 25 0.9 1.9 6.0 5.5 9.0 8.5 0.9 1.9 8.0 9.0 11.0 12.0 0.9 1.9 +3 +3 − − +9.0 Inductor must be externally equipped with VCC +8.5 and output pins. 6SMM µPC2762TB 30 29 0.9 1.9 8.0 9.0 11.0 12.0 0.9 1.9 5.0 6.0 8.0 9.0 0.9 1.9 −3 −3 − − +11 Inductor must be externally equipped with VCC +8.0 and output pins. 6SMM µPC2763TB 30 30 0.9 1.5 10 10 14 14 0.9 1.5 6.5 5.5 9.5 8.5 0.9 1.9 −3 −3 − − +12.5 Inductor must be externally equipped with VCC +11 and output pins. 6SMM µPC2771TB 32 1.0 4.5 7.5 1.0 15 20 1.0 − +4 +6.5 44 1.5 10 15 1.5 6.5 9.5 1.5 0 − +3.5 33 32 31.5 33 32 31 0.9 1.9 2.4 0.9 1.9 2.4 4.5 7.5 8.0 5 7 9 7.5 10.5 11.0 8 10 12 0.9 1.9 2.4 0.9 1.9 2.4 6 7 9 7 8 11 9 10 12 10 11 14 0.9 1.9 2.4 0.9 1.9 2.4 − − − − − − +9.5 +9.0 +9.0 +11.0 +10.5 +10.0 −5 −5 PO is specified as output 1dB compression point. 6SMM µPC2776TB 6SMM µPC3215TB Inductor must be externally equipped with VCC and output pins. 6SMM µPC8181TB Inductor must be externally equipped with VCC and output pins. 6SMM µPC8182TB Selection Guide PU10015EJ03V0PF 41 (11) Down-Converters <for TV/VCR Tuner> NEC Compound Semiconductor Devices, Ltd. provides a range of down converters classified by system, density, and package. The lineup features high-frequency characteristics ideal for ground-wave TV/VCR, BS/CS tuners and CATV, and mobile communication. Different types, such as those incorporating an AGC circuit and those employing a compact package, are also available. Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) Part Number VCC PD (V) (mW) TA (°C) VCC (V) *1 µPC2797GR 11 500 −20 to +75 9 ICC (mA) (UP:VHF/DOWN:UHF) MIN. TYP. MAX. fin (MHz) CG1 (dB) VHF MIN. TYP. MAX. fin (MHz) CG2 (dB) UHF MIN. TYP. MAX. 31 38 45 55 18.5 22 25.5 470 24.5 28 31.5 31 38 45 470 18.5 22 25.5 890 24.5 28 31.5 *1 TA = +75°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) *2 fundes = fdes + 6 MHz, AM100 kHz, 3% Mod <for DBS Tuner> Absolute Maximum Ratings (TA = +25°C) Part Number VCC PD (V) (mW) µPC2721GV 6 *1 250 TA (°C) −40 to +85 Electrical Characteristics (TA = +25°C) ICC (mA) CG1 (dB) CG2 (dB) VCC (V) MIN. TYP. MAX. fin (MHz) MIN. TYP. MAX. fin (MHz) MIN. TYP. MAX. 5 29 38 45.5 900 18 21 24 2000 18 21 24 *1 TA = +85°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) *2 f1 = fRF MHz, f2 = fRF + 30 MHz, fIF = 480 MHz 42 Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) fin (MHz) NF1 (dB) VHF TYP. MAX. fin (MHz) NF2 (dB) UHF CM (dBµ) *2 Po(sat) (dBm) TYP. MAX. Pin fin (MHz) (dBm) MIN. TYP. fdes (MHz) TYP. 55 11 14 470 9.5 12.5 470 0 +7 +10 470 96 470 11 14 890 10 13 890 0 +7 +10 890 92 Remarks Outline Part Number 20SSOP µPC2797GR Electrical Characteristics (TA = +25°C) NF1 (dB) NF2 (dB) IM3 (dBC) *2 Po(sat) (dBm) fin (MHz) TYP. MAX. fin (MHz) TYP. MAX. 900 9 13 2 000 11 15 fin Pin (MHz) (dBm) 2 000 0 MIN. MAX. fdes (MHz) TYP. +2 +7 2 000 38 Selection Guide PU10015EJ03V0PF Remarks Outline Part Number IF output : Emitter 8SSOP µPC2721GV Follower 43 <for Mobile Communication> Absolute Maximum Ratings (TA = +25°C) Part Number Electrical Characteristics (TA = +25°C) ICC (mA) *1 VCC (V) PD (mW) TA (°C) VCC (V) MIN. TYP. CG1 (dB) fRFin MAX. (MHz) MIN. TYP. CG2 (dB) fRFin MAX. (MHz) MIN. TYP. MAX. µPC2756TB 5.5 270 −40 to +85 3 3.5 6.0 8.0 900 11 14 17 1 600 11 14 17 µPC2757TB 5.5 270 −40 to +85 3 3.7 5.6 7.7 800 12 15 18 2 000 10 13 16 µPC2758TB 5.5 270 −40 to +85 3 6.6 11 14.8 800 16 19 22 2 000 14 17 20 µPC8112TB 3.6 270 −40 to +85 3 4.9 8.5 11.7 900 11.5 15 17.5 1 900 9.5 13 15.5 *1 TA = +85°C, Mounted on double-sided copper-clad glass board (50 × 50 × 1.6 mm) *2 Refer to data sheet of each device. <for CATV Tuner> Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (TA = +25°C) ICC (mA) Part Number VCC (V) PD (mW) *1 6 µPC2798GR µPC3220GR 430 *3 *2 11 500 6 433 *1 TA (°C) VCC (V) MIN. TYP. −40 to +85 5 24 −40 to +75 9 −40 to +85 5 CGMAX (dB) MAX. 16-17 Pin MIN. TYP. 35.5 45 short 68 32 47 60 short 30.5 40.0 50.5 − CGMIN (dB) MAX. 16-17 pin MIN. TYP. MAX. 74 76 short 32 39 43 72 78.5 81 short − 43.5 − 64.5 71.0 73.5 − 18.0 24.0 29.5 *1 TA = +85°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) *2 TA = +75°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) *3 Supply voltage of video amplifier block (Supply voltage of AGC amplifier block equal 5 V). *4 Input frequency range of AGC amplifier. 44 Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) *2 NF1 (dB) *2 NF2 (dB) fRFin MAX. (MHz) Po(sat) (dBm) fRFin (MHz) TYP. 900 10 13 1 600 13 16 1 600 800 10 13 2 000 13 16 800 9 12 2 000 13 900 9 11 1 900 11.2 TYP. fRFin PRFin MAX. (MHz) (dBm) Outline Part Number Remarks MIN. TYP. −10 −15 −12 Differential transistor for VCO + Mixer + IF buffer amplifier 6SMM µPC2756TB 2 000 −10 −11 −8 Mixer + IF buffer amplifier 6SMM µPC2757TB 15 2 000 −10 −7 −4 Mixer + IF buffer amplifier 6SMM µPC2758TB 13.2 1 900 −10 −7 −3 Mixer + Lo buffer amplifier IF output : Open Collector 6SMM µPC8112TB Electrical Characteristics (TA = +25°C) GCR (dB) IIP3 VAGC (V) MIN. TYP. 1 to 4 26 32 0.5 to 3.0 35 47 IIP3 *4 fin (MHz) 16-17 (dBm) 16-17 (dBm) pin pin TYP. TYP. short −14 open −8 short − open −7.5 − 0 − − − Outline Part Number Remarks MIN. TYP. MAX. − 30 − 250 20SSOP µPC2798GR − 30 − -7.5 16SSOP µPC3220GR Selection Guide PU10015EJ03V0PF 45 (12) Up-Converters This is a frequency up converter series for transmission-stage of mobile communication equipment. The series includes the µPC8106, which focuses on low-distortion characteristics, the low-current-consuming µPC8109, the high-IP3 µPC8163 and operates at higher frequency and lower distortion µPC8172, µPC8187 by using UHS0 process. Selection can be made based on the system. Absolute Maximum Ratings (TA = +25°C) Part Number Electrical Characteristics (TA = +25°C) *1 VCC (V) ICC (mA) PD (mW) TA (°C) CG1 (dB) VCC (V) MIN. TYP. fRFout MAX. (MHz) MIN. TYP. CG2 (dB) fRFout MAX. (MHz) MIN. TYP. MAX. µPC8106TB 6 270 −40 to +85 3 4.5 9 13.5 900 7 6 10 9 13 12 1 900 4 7 10 µPC8109TB 6 270 −40 to +85 3 2.5 5 8.0 900 4 3 7 6 10 9 1 900 2 1 5 4 8 7 µPC8163TB 3.6 270 −40 to +85 3 11.5 16.5 23 830 6 9 12 1 900 2.5 5.5 8.5 µPC8172TB 3.6 270 −40 to +85 3 5.5 9.0 13 900 6.5 9.5 12.5 1 900 5.5 8.5 11.5 µPC8187TB 3.6 270 −40 to +85 2.8 11 15 19 830 8 11 14 1 900 8 11 14 *1 TA = +85°C, Mounted on double-sided copper-clad glass board (50 × 50 × 1.6 mm) *2 Refer to data sheet of each device. (13) Differential Input/Output Amplifiers This is a VHF wideband differential input/output amplifier IC that uses a high-frequency process. Package is 8-pin SSOP. Absolute Maximum Ratings (TA = +25°C) Electrical Characteristics (VCC± = ±6 V, TA = +25°C) Part Number µPC1663GV BW (MHz) *1 VCC (V) ±7 VID (V) ±5 VICM (V) ±6 TA (°C) −45 to +75 PD (mW) Avd tpd (ns) tr (ns) MIN. TYP. MAX. TYP. Vout (Vp-p) 200 320 500 120 1 TYP. Vout (Vp-p) 2.9 1 TYP. fin (Hz) TYP. 2 10 k to 10 M 3 *2 280 *1 These performances are adjustable with gain selection terminals. (G2A, G2B) *2 TA = +75°C, Mounted on double-sided copper-clad epoxy glass board (50 × 50 × 1.6 mm) 46 Vn (µVr.m.s) Selection Guide PU10015EJ03V0PF Electrical Characteristics (TA = +25°C) *2 NF1 (dB) *2 NF2 (dB) fRFout MAX. (MHz) fRFout (MHz) TYP. 900 8.5 − − − − 1 900 900 8.5 − − − − 830 12.5 − − − 900 9.5 − 1900 830 11 − 1900 TYP. Outline Part Number PO(sat) (dBm) fRFout PRFin MAX. (MHz) (dBm) Remark MIN. TYP. 0 −6.5 −4 Matching circuit must be externally 6SMM µPC8106TB equipped with RF output pin. 900 0 −7.5 −5.5 Matching circuit must be externally 6SMM µPC8109TB equipped with RF output pin. − 830 0 −1.5 0.5 Matching circuit must be externally 6SMM µPC8163TB equipped with RF output pin. 10.4 − 1 900 0 −3.5 0 Matching circuit must be externally 6SMM µPC8172TB equipped with RF output pin. 12 − 1 900 0 +2.5 0 Matching circuit must be externally 6SMM µPC8187TB equipped with RF output pin. Electrical Characteristics (VCC± = ±6 V, TA = +25°C) CMR (dB) Vcm (V) f (MHz) MIN. ±1 0.1 53 SVR (dB) Vo(off) (V) Vo(CM) (V) lsink (mA) ICC (mA) Outline TYP. ∆V (V) MIN. TYP. TYP. MAX. MIN. TYP. MAX. MIN. TYP. TYP. MAX. 94 ±0.5 50 70 0.3 1.5 2.4 2.9 3.4 2.5 3.6 13 20 Selection Guide PU10015EJ03V0PF 8SSOP 47 (14) Modulators/Demodulators As quadrature modulator and demodulator IC series for mobile communication, NEC Compound Semiconductor Devices, Ltd. provides the ICs for W-CDMA. The series consists of µPC8195K for IF-AGC + quadrature modulator ICs and µPC8190K and µPC8194K for IF-AGC + quadrature demodulator ICs. Two type of IF plan can be selectable as the kit use of µPC8190K and µPC8191K or µPC8194K and µPC8195K. AGC + IQ Demodulators Part Number Main Characteristics (TYP.) Package VCC = 3.0 V, ICC = 9 mA, Voltage Gain: 80 dB @ Vcont = 2.5 V/−20 dB @ Vcont = 0.5 V IIP3: −55 dBm @ Vcont = 2.5 V/+5 dBm @ Vcont = 0.5 V, NF: 8.0 dB @ Vcont = 2.5 V/70 dB @ Vcont = 0.5 V, IF Local frequency = 760 MHz µPC8190K µPC8194K Outline IF = 380 MHz 20-pin QFN 0.4 mm pin pitch 20QFN IF = 190 MHz AGC + IQ Modulators Part Number Main Characteristics (TYP.) Package VCC = 3.0 V, ICC = 31.0 mA, IF Local frequency = 760 MHz, OIP3: +17.7 dBm @ Max Gain, Pout: −10 dBm @ Vcont = 2.5 V/−85 dBm @ Vcont = 0.5 V I/Q in = 400 mVP-P(Diff.) µPC8191K µPC8195K IFout = 570 MHz IFout = 380 MHz Outline 20-pin QFN 0.4 mm pin pitch 20QFN (15) Variable Gain Amplifiers NEC Compound Semiconductor Devices, Ltd. provides the following lineup of variable-gain amplifiers for AGC of systems such as those in mobile communication and digital CATV. Part Number VCC (V) ICC (mA) VAGC (V) VAGC up vs. Gain f (GHz) Po (1dB) µPC8119T 2.7 to 3.3 11 0.6 to 2.4 down 0.1 to 1.92 +3 Open Collector PDC, PHS, etc. 6MM µPC8120T 2.7 to 3.3 11 0.6 to 2.4 up 0.1 to 1.92 +3 Open Collector PDC, PHS, etc 6MM µPC8204TK 2.7 to 3.3 11.5 0 to 3.3 up 0.8 to 2.5 +4 Open Collector 6L2MM PHS,W-LAN, etc. (1511) µPC3206GR 4.5 to 5.5 34.5 0 to 5 up to 0.1 − Emitter Follower Digital CATV, etc. 20SSOP µPC3217GV 4.5 to 5.5 23 0 to 5 up 0.01 to 0.1 − Emitter Follower Digital CATV, etc. 8SSOP µPC3218GV 4.5 to 5.5 23 0 to 5 up 0.01 to 0.1 − Emitter Follower Digital CATV, etc. 8SSOP µPC3219GV 4.5 to 5.5 36.5 0 to 5 up 0.01 to 0.1 − Emitter Follower Digital CATV, etc. 8SSOP *1 *2 *1 Supply voltage of video amplifier block equals 4.5 to 10 V. *2 Supply voltage of AGC amplifier block and video amplifier block equal 5 V. 48 Selection Guide PU10015EJ03V0PF Output Circuit Features Outline (16) Low Current High-Frequency Amplifiers NEC Compound Semiconductor Devices, Ltd. provides the following lineup of buffer amplifiers for cellular and cordless telephones. Part Number VCC (V) ICC (mA) @3.0 V µPC8128TB 2.4 to 3.3 µPC8151TB 1 GHz Output port matching frequency 1.66 GHz Output port matching frequency 1.9 GHz Output port matching frequency 2.4 GHz Output port matching frequency Outline Gp (dB) ISL (dB) Po (1dB) (dBm) Gp (dB) ISL (dB) Po (1dB) (dBm) Gp (dB) ISL (dB) Po (1dB) (dBm) Gp (dB) ISL (dB) Po (1dB) (dBm) 2.8 12.5 39 −4.0 13 39 −4.0 13 37 −4.0 − − − 6SMM 2.4 to 3.3 4.2 12.5 38 +2.5 15 36 +1.5 15 34 +0.5 − − − 6SMM µPC8152TB 2.4 to 3.3 5.6 23.0 40 −4.5 19.5 36 −8.5 17.5 35 −8.5 − − − 6SMM µPC8178TB µPC8178TK 2.4 to 3.3 1.9 11.0 39 40 −4.0 −5.5 − − − 11.5 11.0 40 41 −7.0 −8.0 11.5 11.0 38 42 −7.5 −8.0 6SMM 6L2MM (1511) µPC8179TB µPC8179TK 2.4 to 3.3 4.0 13.5 44 43 +3.0 +2.0 − − − 15.5 42 +1.5 +0.5 15.5 16.0 41 42 +1.0 +0.5 6SMM 6L2MM (1511) (17) BiCMOS, CMOS PLL Synthesizers Under development (18) Bipolar PLL Synthesizers An IC for GPS receivers that integrates an RF/IF frequency down converter and a PLL frequency synthesizer on a single chip is available from NEC Compound Semiconductor Devices, Ltd. The fixed frequency division eliminates the need for counter data input. RF/IF Frequency Down-Converter + PLL Frequency Synthesizer IC for GPS Receiver Receive Frequency (MHz) Reference Frequency (MHz) 2nd IF Frequency (MHz) µPB1005K 1575.42 16.368 4.092 µPB1007K 1575.42 16.368 4.092 Part Number VCO Frequency (MHz) 1636.80 (Fix) 1636.80 (Fix) VCC (V) ICC (mA) CG (dB) Outline 2.7 to 3.3 45 72 to 92 36-pin QFN 2.7 to 3.3 25 100 to 120 36-pin QFN Selection Guide PU10015EJ03V0PF 49 6. PACKAGE DIMENSIONS (Unit : mm) 3SLM2 3-Pin Super Lead-Less Minimold 1 3 0.16+0.1 –0.05 3USMM 3-Pin Super Minimold 3-Pin Ultra Super Minimold 1.6±0.1 0.41+0.03 –0.06 0.5 0.3+0.1 –0 2.1 1.6 0.8 1.5±0.1 0 to 0.1 5˚ NE package code : 39 SOT number : SOT-143 1.55 0.85 0.8 MIN. C E B E 0.46 ±0.06 0.16+0.1 –0.06 5˚ 0.4+0.1 –0.05 4 1 0.6+0.1 –0.06 5˚ 3.95±0.25 (1.9) 0.95 0.3 3 2 0.4+0.1 –0.05 0.4+0.1 –0.05 1.5 0.8 1.1+0.2 –0.1 1 0.15+0.1 –0.05 0.15+0.1 –0.05 4.5±0.1 +0.2 –0.1 0.85 (1.8) 2.9±0.2 3 0.59 ± 0.05 4-Pin Power Minimold 2.8+0.2 –0.3 0.3+0.1 –0 0.2+0.1 –0 0.45 0.45 (0.9) 1.4 ± 0.1 0.5 4PMM 4-Pin Minimold (39) 0.8 ± 0.1 NE package code : M03 SOT number : − NE package code : 19 SOT number : − 4MM 1.2 ± 0.05 2 0 to 0.1 NE package code : 30 SOT number : SOT-323 F3TUSMM Flat-Lead 3-Pin Thin-Type Ultra Super Minimold 0.75±0.05 0.15+0.1 –0.05 3.0 0 to 0.1 0.9±0.1 1.5 50 1 Marking 0.47±0.06 NE package code : 34 SOT number : SOT-89 3 0.1 0.42±0.06 1.0 1.6±0.1 3 1 0.3+0.1 –0 2.0±0.2 2.5±0.1 4.0±0.25 2 0.6 0.42±0.06 0.8±0.1 2 0.3 0.8 MIN. B 0.65 0.65 1.5±0.1 C 1.25±0.1 0.3+0.1 –0 4.5±0.1 0.2+0.1 –0 2.1±0.1 E 0 to 0.1 1.1 to 1.4 0.11 0.3 Marking NE package code : 33 SOT number : SOT-23 3SMM 3-Pin Power Minimold 1.6±0.2 0.4+0.1 –0.05 0.15 2 0.15 NE package code : M33 SOT number : − 3PMM 0.65+0.1 –0.15 1.5 2.45±0.1 NE package code : M13 0.125 0.15 1 2.9±0.2 3 0.4 0.125+0.1 –0.05 0.5±0.05 0.285 0.57 0.2 2 0.125 0.2 0.1 0.1 (Bottom View) 0.44±0.05 0.84±0.05 3 2.8±0.2 0.64±0.05 0.4+0.1 –0.05 0.3 3-Pin Minimold 0.95 (Bottom View) 0.5+0.1 –0.05 0.2+0.1 –0.05 0.35 0.35 1 0.7±0.05 0.7 2 0.15+0.1 –0.05 1.0+0.1 –0.05 0.15+0.1 –0.05 3-Pin Lead-Less Minimold 3MM 0.95 3L2MM 0.42±0.06 0.25±0.02 0.42±0.06 1.5 3.0 5˚ Selection Guide PU10015EJ03V0PF NE package code : M02 SOT number : SOT-89 (Unit : mm) F4TSMM 6L2MM Flat-Lead 4-Pin Thin-Type Super Minimold 6-Pin Lead-Less Minimold (1208 PKG) 0.40+0.1 –0.05 3 4 0.8+0.07 –0.05 6L2MM 6-Pin Lead-Less Minimold (1511 PKG) 6MM 0.125+0.1 –0.05 6SMM 6-Pin Minimold 6-Pin Super Minimold (M01) 2.1±0.1 1.3±0.05 0.16±0.05 1.5+0.2 –0.1 0.2+0.1 –0.05 0.65 1.3 0.65 1 2 2.0±0.2 0.1 MIN. 3 4 (0.9) 0.3+0.1 –0.05 6 5 0.95 0.95 0.2±0.1 1.9 2.9±0.2 (0.96) 1.25±0.1 (Bottom View) (0.48) (0.48) 1.5±0.1 4 3 NE package code : M16 2.8+0.2 –0.3 1.1±0.1 5 2 0.4 0.8 0.4 0.5±0.05 0.11+0.1 –0.05 NE package code : M04 SOT number : SOT-343 NE package code : 18 SOT number : SOT-343 1.2+0.07 –0.05 0.65 0.30 +0.1 –0.05 0.30+0.1 –0.05 0.59 ± 0.05 0 to 0.1 1.30 0.65 0.60 1.25 0.65 1.30 2.0 ± 0.1 1 2 0.65 0.65 4 0.3+0.1 –0.05 0.15+0.1 –0.05 1 0.4+0.1 –0.05 0.3 1.0±0.05 1.25 ± 0.1 1 0.3+0.1 –0.05 3 2 0.3+0.1 –0.05 0.65 0.60 1.25 2.0±0.2 0.9±0.1 2.05 ± 0.1 0.15±0.05 2.1±0.2 1.25±0.1 6 4-Pin Super Minimold (18) 0.30+0.1 –0.05 4SMM 0 to 0.1 Remark values within ( ) are for reference. 6TSMM 6-Pin Thin-Type Super Minimold 1.50±0.1 1.25±0.1 1.10±0.1 8SOP 8-Pin Plastic SOP (5.72 mm(225)) 5 6 5 0.20+0.1 –0.05 1 0.48 0.96 3˚+7˚ –3˚ 4 1 5.2±0.2 4 3 0.48 1.50±0.1 2 detail of lead end 0.22+0.1 –0.05 6 4 5 1 3 2 0.65 0.65 1.30 8 6.5±0.3 1.57±0.2 4.4±0.15 1.49 1.1±0.2 0.85 MAX. Selection Guide PU10015EJ03V0PF 0.42+0.08 –0.07 0.11+0.1 –0.05 0.55±0.05 0 to 0.1 0.13±0.05 1.27 0.45 0.60±0.1 2.00±0.2 0.15+0.1 –0.05 NE package code : M01 SOT number : SOT-363 F6TUSMM Flat-Lead 6-Pin Thin-Type Ultra Super Minimold 2.10±0.1 0.7 to 0.1 0.13±0.1 0.8 1.1+0.2 –0.1 0.55±0.03 0.11+0.1 –0.05 0.9±0.1 0.2 MIN. 0.6±0.2 0.12 M 0.10 0.17+0.08 –0.07 0.1±0.1 51 (Unit : mm) 8SSOP 8-Pin Plastic SSOP (4.45 mm(175)) 16SSOP 16-Pin Plastic SSOP (5.72 mm(225)) 16 5 8 20QFN 20-Pin Plastic QFN 9 4.2±0.2 4.0±0.2 detail of lead end 1 3˚+7˚ –3˚ 5˚± 5˚ 8 3.0±0.2 3.2±0.2 Pin 20 5.2±0.3 4 1 3.2±0.2 3.0±0.2 detail of lead end Pin 1 2.9±0.1 (Bottom View) 0.18±0.05 3.2±0.1 1.0±0.2 0.87±0.2 4.0±0.2 S 0.5±0.2 0.575 MAX. 0.65 0.3+0.10 –0.05 0.10 M 0.475 MAX. 0.65 0.15 0.5±0.2 4.2±0.2 0.14+0.10 –0.05 1.5±0.1 4.4±0.2 1.5±0.1 0.22+0.10 –0.05 +0.10 –0.05 0.15 0.30±0.15 0.9 MAX. 1.8 MAX. 4.94±0.2 1.8 MAX. 6.4±0.2 0.10 S 0.17+0.08 –0.07 0.4 0.10 M 0.125±0.075 0.1±0.1 20SSOP 20-Pin Plastic SSOP (5.72 mm(225)) 20 24QFN 28QFN 24-Pin Plastic QFN 28-Pin Plastic QFN 11 5.5±0.2 detail of lead end 5.1±0.2 5.2±0.2 10 Pin 1 0.5 0.5±0.2 5.5±0.2 0.575 MAX. 5.1±0.2 0.5 0.15+0.10 –0.05 0.15 0.55±0.20 0.24±0.05 0.6 0.6 1.0±0.2 (Bottom View) 0.14+0.10 –0.05 1.5±0.1 5.0±0.2 0.45±0.15 0.22±0.05 1.0 MAX. 4.4±0.1 0.14+0.10 –0.05 1.8 MAX. (Bottom View) 5.2±0.2 1.0 MAX. 6.4±0.2 0.22+0.10 –0.05 4.7±0.2 Pin 1 6.7±0.3 0.65 5.1±0.2 Pin 28 Pin 24 1 5.1±0.2 4.0±0.2 4.2±0.2 4.2±0.2 4.0±0.2 3˚+7˚ –3˚ 4.7±0.2 5.0±0.2 0.5 0.10 M 0.5 0.1±0.1 µ-X 36QFN 79A µ-X 36-Pin Plastic QFN 79A (Bottom View) 0.22±0.05 0.55±0.2 0.4±0.15 Drain 0.8 MAX. 5.7 MAX. 1.0MAX. 3.6±0.2 0.1+0.06 –0.03 Selection Guide PU10015EJ03V0PF 0.9±0.2 φ 2.1 1.8 MAX. 2.55±0.2 0.55 0.14+0.10 –0.05 Gate E 0.5 52 Drain 1.2 MAX. Gate 0.5±0.05 6.2±0.2 6.0±0.2 Source 0.2±0.1 1 Pin 5.7 MAX. 3.8MIN. 36 Pin 45˚ 1.5±0.2 Source 1.0 MAX. B 6.2±0.2 6.0±0.2 6.2±0.2 6.0±0.2 C (Bottom View) 4.2 MAX. 4.4 MAX. 3.8 MIN. 0.8±0.15 3.8 MIN. 0.6±0.15 6.2±0.2 6.0±0.2 0.5±0.05 3.8 MIN. E (Unit : mm) TO-92 TO-92 5.5 MAX. 5.2 MAX. 12.7 MIN. 0.5 2.54 2 3 1.77 MAX. 1 4.2 MAX. 1.27 Selection Guide PU10015EJ03V0PF 53 7. MOUNTING PAD LAYOUT (Unit : mm) 3-Pin Super Lead-Less Minimold (0804) 3-Pin Lead-Less Minimold 3-Pin Minimold 0.90 0.15 0.50 1.9 0.95 2.4 0.285 0.10 0.05 0.20 0.10 Remark : Mold package : Lead 0.15 0.05 0.35 0.24 0.05 0.20 0.05 0.94 Remark 2 1 0.8 : Mold package : Lead 3-Pin Super Minimold 3-Pin Power Minimold 1.0 0.57 0.05 0.225 0.35 0.05 0.20 0.35 3 3-Pin Ultra Super Minimold 2.2 45° 0.9 1.3 1.0 0.65 0.5 2 1.0 1.0 2.0 0.6 1.5 0.8 1.3 1.7 3 0.9 45° 2.2 3 2 1 1 0.6 0.6 1.0 2.0 Flat-Lead 3-Pin Thin-Type Ultra Super Minimold 4-Pin Power Minimold 4-Pin Minimold (39) 2.7 1.0 2.2 1.0 1.5 0.9 2 1.9 1 1.0 Remark 54 1.5 1 0.45 1.5 2 0.8 0.4 4 2.4 0.95 3 3 0.4 0.5 The mounting pad layouts in this document are for reference only. Selection Guide PU10015EJ03V0PF 1.0 1.0 (Unit : mm) 4-Pin Super Minimold (18) Flat-Lead 4-Pin Thin-Type Super Minimold 6-Pin Lead-Less Minimold (1208 PKG) 1.3 4 0.8 0.6 4 0.5 0.8 1.55 1.7 0.25 3 0.8 3 0.4 2 1 2 0.45 0.6 1.25 6-Pin Lead-Less Minimold (1511 PKG) for Silicon MMIC/GaAs MMIC 1.15 0.4 1 6-Pin Super Minimold (M01) 6-Pin Minimold 0.6 0.8 0.48 1.9 2.4 0.45 1.10 0.26 1.0 0.4 0.48 0.65 0.65 0.95 0.95 16-Pin Plastic SSOP (5.72 mm (225)) 0.48 5.72 4.45 1.20 0.30 0.40 1.27 1.27 8-Pin Plastic SSOP (4.45 mm (175)) Flat-Lead 6-Pin Thin-Type Ultra Super Minimold 0.48 0.35 0.65 Selection Guide PU10015EJ03V0PF 0.35 0.65 55 (Unit : mm) 28-Pin Plastic QFN 0.5 0.7 to 0.8 0.35 4.1 0.65 79A 4.0 1.7 Source Drain 1.2 1.0 5.9 1.0 Gate Through Hole: φ 0.2 × 33 0.5 0.5 6.1 Stop up the hole with a rosin or something to avoid solder flow. 56 Selection Guide PU10015EJ03V0PF 0.70 0.70 R0.2 4.30 3.90 3.1 0.3 5.72 2– φ 0.3 0.5 0.3 0.5 0.3 R0.15 R0.15 0.5 0.5 0.5 1.2 0.5 2– φ 0.3 0.3 0.7 to 0.8 1.27 24-Pin Plastic QFN 0.4 20-Pin Plastic SSOP (5.72 mm (225)) 8. MARKING, hFE RANK INFORMATION FOR MINIMOLD DEVICES (1) Bipolar Transistors (1/3) Part Number Old Specification New Specification Marking 2SA1977 − FB T92 hFE = 20 to 100 2SA1978 − FB T93 hFE = 20 to 100 2SC2570A E − E hFE = 40 to 200 2SC3355 K − K hFE = 50 to 300 2SC3356 R23 R24 R25 Q R S R23 R24 R25 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC3357 RH RF RE − − − RH RF RE hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC3582 K − K hFE = 50 to 250 2SC3583 R33 R34 R35 Q R S R33 R34 R35 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 R43 R44 R45 Q R S R43 R44 R45 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 R26 R27 R28 RBF RBG RBH R26 R27 R28 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 R36 R37 R38 RCF RCG RCH R36 R37 R38 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 R46 R47 R48 RDF RDG RDH R46 R47 R48 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC4226 R23 R24 R25 − − − R23 R24 R25 hFE = 40 to 80 hFE = 70 to 140 hFE = 125 to 250 2SC4227 R33 R34 R35 − − − R33 R34 R35 hFE = 40 to 90 hFE = 70 to 150 hFE = 110 to 240 2SC3585 2SC4093 2SC4094 2SC4095 Part Number Old Specification New Specification Marking 2SC4228 R43 R44 R45 − − − R43 R44 R45 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC4536 QR QS − − QR QS hFE = 60 to 120 hFE = 100 to 200 2SC4570 T72 T73 T74 − − − T72 T73 T74 hFE = 40 to 80 hFE = 60 to 120 hFE = 100 to 200 2SC4571 T75 T76 T77 − − − T75 T76 T77 hFE = 40 to 80 hFE = 60 to 120 hFE = 100 to 200 2SC4703 SH SF SE − − − SH SF SE hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC4955 T83 FB T83 hFE = 75 to 150 2SC4957 T83 − T83 hFE = 75 to 150 2SC4959 T83 − T83 hFE = 75 to 150 2SC5004 − FB 77 hFE = 60 to 120 2SC5005 − FB 73 hFE = 60 to 120 2SC5006 − FB 24 hFE = 80 to 160 2SC5007 − FB 34 hFE = 80 to 160 2SC5008 − FB 44 hFE = 80 to 160 2SC5010 − FB 83 hFE = 75 to 150 2SC5011 − − − EB FB GB R26 R27 R28 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC5012 − − − EB FB GB R36 R37 R38 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 Specification Selection Guide PU10015EJ03V0PF Specification 57 (1) Bipolar Transistors (2/3) Part Number Specification Marking Specification 2SC5013 EB FB GB R46 R47 R48 hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC5015 KB T83 hFE = 75 to 150 2SC5180 FB T84 hFE = 70 to 140 2SC5181 FB 84 hFE = 70 to 140 2SC5185 FB T86 hFE = 70 to 140 2SC5186 FB 86 hFE = 70 to 140 2SC5191 FB T88 hFE = 80 to 160 2SC5192 FB T88 hFE = 80 to 160 2SC5193 FB T88 hFE = 80 to 160 2SC5194 FB T88 hFE = 80 to 160 2SC5195 FB 88 hFE = 80 to 160 2SC5336 RH RF RE RH RF RE hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC5337 QQ QR QS QQ QR QS hFE = 40 to 80 hFE = 60 to 120 hFE = 100 to 200 SH SF SE SH SF SE hFE = 50 to 100 hFE = 80 to 160 hFE = 125 to 250 2SC5369 FB T95 hFE = 80 to 160 2SC5431 EB FB TA TB hFE = 60 to 90 hFE = 80 to 120 2SC5432 EB FB TC TD hFE = 80 to 110 hFE = 100 to 145 2SC5433 EB FB TE TF hFE = 80 to 110 hFE = 100 to 145 2SC5434 EB FB TH TJ hFE = 80 to 110 hFE = 100 to 145 2SC5435 EB FB TK TL hFE = 75 to 110 hFE = 95 to 140 EB FB TN TP hFE = 75 to 100 hFE = 90 to 130 2SC5338 2SC5436 58 Part Number Specification Marking Specification 2SC5437 EB FB TS TT hFE = 80 to 110 hFE = 100 to 145 2SC5454 FB R54 hFE = 75 to 150 2SC5455 FB R55 hFE = 75 to 150 2SC5507 FB T78 hFE = 50 to 100 2SC5508 FB T79 hFE = 50 to 100 2SC5509 FB T80 hFE = 50 to 100 2SC5606 FB UA hFE = 60 to 100 2SC5614 EB FB C1 C2 hFE = 80 to 110 hFE = 100 to 145 2SC5615 EB FB D1 D2 hFE = 80 to 110 hFE = 100 to 145 2SC5617 EB FB Y1 Y2 hFE = 75 to 110 hFE = 95 to 140 2SC5618 EB FB W1 W2 hFE = 70 to 110 hFE = 90 to 130 2SC5667 FB UB hFE = 50 to 100 2SC5668 FB UB hFE = 50 to 100 2SC5674 FB C5 hFE = 50 to 100 2SC5676 FB UC hFE = 100 to 160 2SC5677 FB D5 hFE = 100 to 160 2SC5704 FB zC hFE = 50 to 100 2SC5736 FB TX hFE = 100 to 145 2SC5741 FB TX hFE = 100 to 145 2SC5745 FB TY hFE = 100 to 145 2SC5746 FB Y5 hFE = 100 to 145 2SC5750 FB R54 hFE = 75 to 150 2SC5751 FB R54 hFE = 75 to 150 2SC5752 FB R55 hFE = 75 to 150 2SC5753 FB R55 hFE = 75 to 150 Selection Guide PU10015EJ03V0PF (1) Bipolar Transistors (3/3) Part Number Specification Marking Specification Part Number Specification Marking Specification 2SC5754 FB R57 hFE = 40 to 100 NE662M03 FB 2SC5786 FB UE hFE = 50 to 100 NE685M33 FB − hFE = 75 to 150 2SC5787 FB B7 hFE = 50 to 100 NE687M33 FB − hFE = 70 to 140 2SC5800 FB 80 hFE = 100 to 145 NE851M33 FB − hFE = 100 to 145 2SC5801 FB E7 hFE = 100 to 145 hFE = 60 to 100 UA (2) SiGe HBT Part Number Specification Marking Specification Part Number Specification Marking Specification 2SC5761 FB T16 hFE = 200 to 400 NESEG2031M05 FB T1H hFE = 130 to 260 NESEG2021M05 FB T1G hFE = 130 to 260 NESEG2101M05 FB T1J hFE = 130 to 260 (3) Dual Gate FETs Part Number 3SK206 (GaAs) Old Specification U76 U77 U78 U79 New Specification − − − − Marking Specification U76 U77 U78 U79 IDSS = 10 to 25 mA IDSS = 20 to 35 mA IDSS = 30 to 50 mA IDSS = 45 to 80 mA V21 V22 IDSX = 0.01 to 3 mA IDSX = 1 to 8 mA Part Number V21 V22 VBA VBB New Specification Marking Specification 3SK254 − U1E U1E IDSX = 0.1 to 5.0 mA 3SK255 − U1G U1G IDSX = 0.5 to 7.0 mA − − − − U71 U72 U73 U74 IDSS = 5 to 15 mA IDSS = 10 to 25 mA IDSS = 20 to 35 mA IDSS = 30 to 40 mA 3SK299 3SK222 Old Specification U71 U72 U73 U74 (4) Middle-Power LD-MOS FETs (79A Package) Marking R1 R4 W2 A2 A3 AW AU Part Number NE5500179A NE5500479A NE5510279A NE5520279A NE5520379A NE552R479A NE552R679A Selection Guide PU10015EJ03V0PF 59 9. MARKINGS VS. PART NO. ON HIGH-FREQUENCY IC OF 4-PIN/6-PIN/SUPER MINIMOLD Marking Part Number Marking C1A C1B C1C C1D C1E C1F C1G C1H C1P C1Q C1R C1S C1T C1U C1W C1X C1Y C1Z µPC1675G µPC1676G µPC1688G µPC2708TB µPC2709T/TB µPC2710TB µPC2711TB µPC2712T/TB µPC2726T µPC2745TB µPC2746TB µPC2747TB µPC2748TB µPC2749TB µPC2756TB µPC2757TB µPC2758TB µPC2762TB C2A C2D C2G C2H C2K C2L C2M C2N C2P C2S C2T C2U C2V C2Y C2Z Part Number µPC2763TB µPC8106TB µPC8109TB µPC2771TB µPC8112TB µPC2776TB µPC8119T µPC8120T µPC8128TB µPC2791TB µPC2792TB µPC8151TB µPC8152TB µPC8163TB µPB1511TB Marking C3A C3B C3C C3E C3F C3G C3H 6B 6C Part Number µPC8172TB µPC8178TB µPC8179TB µPC8181TB µPC8182TB µPC8187TB µPC3215TB µPC8178TK µPC8179TK Remark Each part number has a marking one by one. This marking is to know part number and has no other meaning. The marking is three or two letters but not part number because minimold package is too small to mark number over three letters. When the part number has plural size packages, part number has plural package codes but only one marking. REMARKS PACKAGE CODE ON MINIMOLD (µP Part number case) Product released before 1990 ‘G’ only Product released between 1990 and April 1996 Minimold : TA Super minimold : TB Flat-lead thin-type ultra super minimold : TC Thin-type super minimold : TF Lead-less minimold : TK ‘T’ only Remark 2SC and 3SK have no package code. 60 Product released after April 1996 Selection Guide PU10015EJ03V0PF To know further information, contact your nearby sales office. Also available following documentation. • Data book : RF and Microwave Devices (CD-ROM) (PX10017E) TECHNICAL INQUIRIES Technical information for products appearing in this guide is provided in the relevant data sheet (or preliminary data sheet) and technical/application note, so if you have any questions of technical nature after reading these documents, contact your nearby sales office. 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The our web site address is as follows; RF and Microwave Devices Homepage : http://www.csd-nec.com/microwave/index.html Homepage-related inquiries E-mail: [email protected] Selection Guide PU10015EJ03V0PF 61 Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0209 Document No. PU10015EJ03V0PF (3rd edition) Date Published October 2002 CP(K) NEC Corporation 1993 NEC Compound Semiconductor Devices 2001, 2002 Printed in Japan